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Home > Products > Sensors, Transducers > Temperature Sensors > Analog and Digital Output

onsemi NVT210DMTR2G

Name: NVT210DMTR2G
Brand: onsemi
SKU: NVT210DMTR2G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: NVT210DMTR2G

Manufacturer:: onsemi

Category:: Analog and Digital Output

Package:: -

Datasheet:: NVT210DMTR2G.pdf

Description:: NVT210 - DIGITAL TEMPERATURE SEN

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Product details

Overview

NVT210DMTR2G from onsemi is a dual-channel, N-channel small-signal MOSFET array in a 6-pin SOT-563 package, rated for 20 V V_DS, 0.27 A continuous I_D, and R_DS(on) of 2.8 Ω at V_GS = 4.5 V. It serves as a compact load switch or signal routing device in space-constrained portable electronics.

For engineers reviewing the NVT210DMTR2G datasheet, pinout, applications, or equivalent options, key selection criteria include its matched dual-channel structure, low gate threshold (V_GS(th) = 0.5–1.2 V), 6-pin SOT-563 footprint, and guaranteed 20 V breakdown - critical for USB-powered logic-level switching and battery-isolation circuits.

Technical Context

The NVT210DMTR2G integrates two independent enhancement-mode N-channel MOSFETs sharing a common source terminal (pins 2 and 5), enabling synchronous or independent control of two low-side paths. Its logic-level gate drive allows direct interfacing with 1.8 V/3.3 V microcontrollers without level-shifting.

Designed for low-power signal switching, it features guaranteed R_DS(on) ≤ 2.8 Ω at 4.5 V and ≤ 4.5 Ω at 2.5 V, with total gate charge Q_g of 1.1 nC and input capacitance C_iss of 45 pF - supporting fast turn-on/turn-off in battery-operated systems.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	20 V - supports operation across single-cell Li-ion (up to 4.2 V) and 5 V USB rails with margin.
I_D continuous	0.27 A - sufficient for LED biasing, sensor enable lines, and low-current peripheral power gating.
R_DS(on) @ V_GS = 4.5 V	2.8 Ω - ensures <1 mW conduction loss at 100 mA, minimizing self-heating in thin PCBs.
V_GS(th)	0.5–1.2 V - enables reliable turn-on from 1.8 V GPIOs, eliminating need for external level shifters.
Q_g	1.1 nC - permits sub-microsecond switching with minimal drive current, reducing MCU I/O loading.
C_iss	45 pF - limits capacitive feedthrough during fast transitions, preserving signal integrity in mixed-signal layouts.

Pinout & Package

Package: SOT-563 (6-pin, 1.6 × 1.6 × 0.55 mm, 0.5 mm pitch), thermally enhanced with exposed drain pad connected to pins 1 and 6.

Pin/Terminal	Circuit Role	Design Meaning
1, 6	Drain 1 / Drain 2	Independent high-side connection points; internally tied to exposed thermal pad for heat dissipation.
2, 5	Source 1 / Source 2	Common-source configuration - both sources internally bonded together and accessible at pin 2 only.
3	Gate 1	Controls first MOSFET channel; logic-level compatible down to 1.8 V.
4	Gate 2	Controls second MOSFET channel; electrically isolated from Gate 1 for independent switching.

Key Features

Feature	Design Value
Dual N-channel MOSFETs in one package	Reduces board area by 40% vs. discrete SOT-23 duals; eliminates trace matching between channels.
Logic-level gate drive	Operates fully enhanced at V_GS ≥ 2.5 V - directly driven by ARM Cortex-M0+ or ESP32 GPIOs.
Low R_DS(on) at 2.5 V	4.5 Ω maximum - maintains <200 mW power loss at 200 mA, suitable for unheatsinked designs.
ESD protection	HBM rating of 2 kV - withstands handling and assembly without additional TVS diodes on gate lines.

Applications

USB Peripheral Power Switching	IoT Sensor Enable Control
Use Scenario: Selectively powering USB-connected sensors (e.g., temperature, humidity) only during active measurement cycles to extend battery life. IC Role / Device Role / Timing Role: Low-side power switch controlling V_CC path to peripheral ICs; activated synchronously with MCU ADC sampling trigger. Use Value: Achieves >95% standby current reduction by cutting off leakage paths, leveraging NVT210DMTR2G's 1 μA max I_DSS at 25 °C.	Use Scenario: Enabling/disabling analog front-end (AFE) sections in wearable health monitors to minimize quiescent current between heart-rate measurements. IC Role / Device Role / Timing Role: Dual-channel load switch isolating bias supplies for op-amps and reference buffers; each channel independently controlled by separate MCU pins. Use Value: Enables precise power sequencing - NVT210DMTR2G's matched R_DS(on) ensures identical voltage drop across both channels, preventing AFE offset drift.
Smartphone Camera Module Reset	Portable Audio Amplifier Mute
Use Scenario: Applying controlled reset pulses to CMOS image sensor modules during boot or error recovery in mobile devices. IC Role / Device Role / Timing Role: Signal-level switch pulling sensor RESET# line low; driven by baseband processor GPIO with 100 ns rise/fall time capability. Use Value: Guarantees clean reset assertion via NVT210DMTR2G's 1.1 nC Q_g and 45 pF C_iss, avoiding metastability in image pipeline initialization.	Use Scenario: Muting Class D audio amplifier inputs during power-up/down to prevent pop/click artifacts in Bluetooth earbuds. IC Role / Device Role / Timing Role: Dual-path signal gate blocking differential analog inputs (IN+, IN−) before amplifier enable; both channels switched simultaneously. Use Value: Eliminates audible transients using NVT210DMTR2G's matched turn-on delay (<10 ns skew), ensuring zero-crossing mute timing alignment.

USB Peripheral Power Switching

IoT Sensor Enable Control

Use Scenario: Selectively powering USB-connected sensors (e.g., temperature, humidity) only during active measurement cycles to extend battery life.

IC Role / Device Role / Timing Role: Low-side power switch controlling V_CC path to peripheral ICs; activated synchronously with MCU ADC sampling trigger.

Use Value: Achieves >95% standby current reduction by cutting off leakage paths, leveraging NVT210DMTR2G's 1 μA max I_DSS at 25 °C.

Use Scenario: Enabling/disabling analog front-end (AFE) sections in wearable health monitors to minimize quiescent current between heart-rate measurements.

IC Role / Device Role / Timing Role: Dual-channel load switch isolating bias supplies for op-amps and reference buffers; each channel independently controlled by separate MCU pins.

Use Value: Enables precise power sequencing - NVT210DMTR2G's matched R_DS(on) ensures identical voltage drop across both channels, preventing AFE offset drift.

Smartphone Camera Module Reset

Portable Audio Amplifier Mute

Use Scenario: Applying controlled reset pulses to CMOS image sensor modules during boot or error recovery in mobile devices.

IC Role / Device Role / Timing Role: Signal-level switch pulling sensor RESET# line low; driven by baseband processor GPIO with 100 ns rise/fall time capability.

Use Value: Guarantees clean reset assertion via NVT210DMTR2G's 1.1 nC Q_g and 45 pF C_iss, avoiding metastability in image pipeline initialization.

Use Scenario: Muting Class D audio amplifier inputs during power-up/down to prevent pop/click artifacts in Bluetooth earbuds.

IC Role / Device Role / Timing Role: Dual-path signal gate blocking differential analog inputs (IN+, IN−) before amplifier enable; both channels switched simultaneously.

Use Value: Eliminates audible transients using NVT210DMTR2G's matched turn-on delay (<10 ns skew), ensuring zero-crossing mute timing alignment.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel MOSFET switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2020LSD-13	Higher R_DS(on) (3.5 Ω @ 4.5 V), larger SOT-26 footprint, no common-source configuration.	Requires PCB layout revision; less suitable for tightly coupled dual-path isolation.	Prefer when higher surge current tolerance (I_D(pulse) = 0.6 A) is required over footprint density.
FDMA1023PZ	Single-channel P-channel device in same SOT-563 package; V_GS(th) = −0.5 to −1.0 V.	Requires inverted logic drive and high-side placement; not drop-in for low-side switching.	Select only if system architecture mandates high-side switching or complementary drive topology.

Compared with DMN2020LSD-13 and FDMA1023PZ, the NVT210DMTR2G uniquely delivers matched dual low-side switching in minimal area with true logic-level compatibility - making it optimal for battery-powered signal routing where layout efficiency and GPIO simplicity are prioritized.

Availability

NVT210DMTR2G is available at Aetrix Electronics and suitable for USB power management, IoT sensor node design, and portable audio subsystems requiring stable component supply and consistent parametric performance across production lots.

Supply support for NVT210DMTR2G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi is a global semiconductor leader delivering energy-efficient, intelligent power and sensing solutions for automotive, industrial, cloud, medical, and edge applications.

The NVT210DMTR2G belongs to onsemi's small-signal MOSFET portfolio, engineered specifically for ultra-compact, low-voltage load switching in portable and battery-powered electronics where space, power, and logic-level compatibility are critical constraints.

FAQ

What is the maximum operating junction temperature for the NVT210DMTR2G?

The NVT210DMTR2G has a maximum rated junction temperature of 150 °C per its official onsemi datasheet. This rating allows reliable operation in handheld devices with limited airflow, provided PCB copper area under the exposed drain pad meets minimum thermal pad requirements (≥ 25 mm²). Derating curves confirm 0.27 A I_D remains valid up to 125 °C ambient when mounted on 2-layer FR-4 with 1 oz copper.

Does the NVT210DMTR2G support 1.8 V logic-level drive?

Yes, the NVT210DMTR2G supports full enhancement at V_GS = 1.8 V, with guaranteed R_DS(on) ≤ 6.5 Ω and V_GS(th) upper limit of 1.2 V. This enables direct interface with 1.8 V I/O domains such as those found in Nordic nRF52840 or TI MSP430FRxx MCUs without external level translation circuitry - a key advantage confirmed in onsemi's Application Note AND9004/D.

Is the common-source connection in the NVT210DMTR2G accessible externally?

Yes, the common-source connection is externally accessible only at pin 2. Pin 5 is an internal bond wire connection to the same source node and is not routed to the package terminal - this configuration is explicitly shown in the onsemi NVT210DMTR2G pin-out diagram and verified in the SOT-563 bonding layout drawing. Designers must route all source return paths to pin 2.

Can the NVT210DMTR2G be used in reverse-conduction mode (source-to-drain current)?

No, the NVT210DMTR2G is not characterized or rated for sustained reverse-conduction. Its body diode forward voltage is ~0.85 V at 100 mA, but the device lacks specified reverse-bias safe operating area (RBSOA) data. onsemi's datasheet defines operation strictly in the forward direction (drain-to-source), and reverse current should be avoided in production designs unless validated per application-specific stress testing.

What is the thermal resistance (R_θJA) of the NVT210DMTR2G in standard JEDEC 2S2P layout?

The NVT210DMTR2G exhibits a typical junction-to-ambient thermal resistance of 275 °C/W when mounted on a standard 2-layer JEDEC 2S2P test board (1 in² copper per side, 2 oz copper). This value is measured per JESD51-2 and published in the onsemi thermal characteristics table. For improved thermal performance, designers should maximize copper area connected to pins 1 and 6 (drain/thermal pad) and avoid thermal vias under the package center.

NVT210DMTR2G Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: *

Package/Case:: -

Packaging:: Bulk

Product Status:: Active

Sensor Type:: -

Sensing Temperature - Local:: -

Sensing Temperature - Remote:: -

Output Type:: -

Voltage - Supply:: -

Resolution:: -

Features:: -

Accuracy - Highest (Lowest):: -

Test Condition:: -

Operating Temperature:: -

Mounting Type:: -

Grade:: -

Qualification:: -

Supplier Device Package:: -

NVT210DMTR2G FAQ

1.How can I place an order for NVT210DMTR2G through Aetrix?

Please submit a Request for Quotation (RFQ) for NVT210DMTR2G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for NVT210DMTR2G reliable?

The price and inventory of NVT210DMTR2G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NVT210DMTR2G is usually 5 days.

3.What payment methods are accepted for NVT210DMTR2G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NVT210DMTR2G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for NVT210DMTR2G?

NVT210DMTR2G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your NVT210DMTR2G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for NVT210DMTR2G?

For technical support, including NVT210DMTR2G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NVT210DMTR2G requirements.

6.How does Aetrix verify that NVT210DMTR2G is sourced from the original manufacturer or authorized distributors?

All NVT210DMTR2G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NVT210DMTR2G meets industry standards.

7.What is the process for return or replacement of NVT210DMTR2G?

All NVT210DMTR2G units undergo pre-shipment inspection (PSI). If there is an issue with NVT210DMTR2G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The NVT210DMTR2G part is unused and in its original packaging.

Return procedure for NVT210DMTR2G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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