NXP Semiconductors NVT4555UK012

Overview

NVT4555UK012 from NXP Semiconductors is a SIM card interface IC integrating a dual-voltage LDO (1.8 V / 2.95 V) and three bidirectional level translators for I/O, RSTn, and CLKn signals between host microcontrollers and ISO/IEC 7816-compliant SIM cards. It operates with host supply (VCC) from 1.1 V to 3.6 V, battery input (VBAT) up to 5.25 V, and delivers ≤50 mA SIM supply current with <1 µA shutdown current. It is used in mobile handsets and wireless modems requiring compact, ESD-hardened SIM interfacing.

For engineers reviewing the NVT4555UK012 datasheet, NVT4555UK012 pinout, NVT4555UK012 application, or NVT4555UK012 equivalent, key selection criteria include its WLCSP12 package footprint, ISO-7816-3 compliant shutdown sequencing, ±8 kV IEC61000-4-2 ESD protection on SIM-side pins, automatic direction-sensing I/O translation, and dual-voltage LDO selection via CTRL pin.

Technical Context

The NVT4555UK012 implements a PMOS-based low-dropout regulator with dropout voltage ≤150 mV at 50 mA and PSRR ≥60 dB at 1 kHz, enabling stable SIM power under noisy battery conditions. Its level translator architecture uses automatic edge-detection logic to manage bidirectional data flow without external direction control, supporting open-drain host and SIM interfaces.

It enforces ISO-7816-3 shutdown sequence: RST_SIM deactivates first, followed by CLK_SIM, IO_SIM, and VSIM - all within microseconds - using internal pull-downs when EN is driven LOW. The device integrates thermal and overcurrent protection in the LDO block and supports clock frequencies up to 5 MHz with propagation delay ≤25 ns (at 1.2 V VCC).

Key Specifications

Pinout & Package

Package: Wafer-Level Chip-Scale Package (WLCSP12), 12-bump configuration, nominal dimensions 1.19 mm × 1.62 mm × 0.56 mm, 0.4 mm bump pitch.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SIM card interface applications.

Compared with MAX16085ETA+ and TPS65132A1YFFR, the NVT4555UK012 uniquely integrates dual-voltage LDO regulation, auto-direction level translation, and ISO-7816-3–compliant shutdown in one WLCSP12 package-reducing component count, layout complexity, and qualification effort for certified SIM designs.

Availability

NVT4555UK012 is available at Aetrix Electronics and suitable for mobile handsets, wireless modems, and SIM card terminals requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant wafer-level packaging.

Supply support for NVT4555UK012 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and mobile applications.

The NVT4555UK012 belongs to NXP's SIM interface product line, engineered specifically to simplify and harden physical SIM integration in space- and power-constrained portable electronics while meeting ETSI, ISO-7816, and IEC61000-4-2 compliance requirements.

FAQ

What is the primary function of the NVT4555UK012 in a SIM card interface design?

The NVT4555UK012 serves as an integrated SIM interface solution, combining a dual-voltage LDO (1.8 V / 2.95 V) and three level translators (I/O, RSTn, CLKn) to bridge voltage and signaling differences between host microcontrollers and ISO/IEC 7816-compliant SIM cards. It eliminates the need for discrete LDOs and translators while enforcing standardized shutdown sequencing and ESD protection - all in a 1.19 mm × 1.62 mm WLCSP12 package. The NVT4555UK012 is optimized for mobile and modem applications where board space, power efficiency, and certification compliance are critical.

How does the NVT4555UK012 select between 1.8 V and 2.95 V SIM supply voltage?

The NVT4555UK012 selects SIM supply voltage using the CTRL pin (B2): driving CTRL LOW (GND) configures the internal LDO for 1.8 V output at VSIM, while driving CTRL HIGH (VCC) selects 2.95 V. This selection is latched during power-up and remains active until changed. The NVT4555UK012's LDO maintains regulation across 0–50 mA load and supports fast start-up (<400 µs) with proper 4.7 µF output capacitance. Voltage accuracy is ±5% over temperature and load, meeting ETSI and ISO-7816 specifications.

Does the NVT4555UK012 support hot-swap insertion and removal of SIM cards?

Yes, the NVT4555UK012 fully supports SIM hot-swap via its ISO-7816-3–compliant shutdown sequence: when EN is pulled LOW, it deactivates RST_SIM first, then CLK_SIM, IO_SIM, and finally VSIM - all within microseconds - using internal pull-down resistors. This prevents data corruption, bus contention, or SIM lockup during insertion/removal. The NVT4555UK012 also provides ±8 kV IEC61000-4-2 ESD protection on all SIM-side pins, making it robust against repeated hot-swap events in consumer and industrial environments.

What are the recommended external capacitors for the NVT4555UK012 and why?

The NVT4555UK012 requires three external capacitors: a 1.0 µF X5R/X7R MLCC at VBAT (bypassing battery input), a 0.1 µF X5R/X7R MLCC at VCC (host supply), and a 4.7 µF X5R/X7R MLCC at VSIM (SIM output). These values ensure LDO stability, PSRR performance, and transient response. The 4.7 µF capacitor must have low ESR (<1.0 Ω) and be selected considering DC bias derating - e.g., a 1206-case 6.3 V part retains ~20% of rated capacitance at 3 V bias. The NVT4555UK012's stability is highly sensitive to VSIM capacitance; undersizing risks oscillation or poor load regulation.

Can the NVT4555UK012 operate with a 1.2 V host supply (VCC)?

Yes, the NVT4555UK012 supports VCC from 1.1 V to 3.6 V, including 1.2 V operation. At 1.2 V VCC, the device delivers 1.8 V SIM supply (CTRL = GND) with propagation delay ≤25 ns and maintains full level translation functionality for I/O, RSTn, and CLKn. Input thresholds scale with VCC (VIH = 0.85 × VCC), and internal pull-ups (3.5–6.5 kΩ on IO_HOST) remain compatible with 1.2 V open-drain hosts. The NVT4555UK012's UVLO activates below 0.7 V, ensuring reliable disable during 1.2 V brownout conditions.