NXP Semiconductors NVT4557HKX

Overview

NVT4557HKX from NXP Semiconductors is a SIM card interface level translator IC with integrated EMI filtering and 8 kV IEC 61000-4-2 Level 4 ESD protection on all SIM-side pins and VCCB. It performs bidirectional voltage translation between a 1.08 V–1.98 V host microcontroller and a 1.62 V–3.6 V SIM card across three channels (IO, RSTn, CLKn), supports up to 10 MHz clock frequency, and complies with ETSI, IMT-2000, and ISO/IEC 7816-3 standards for secure hot-swap and shutdown sequencing.

For engineers reviewing the NVT4557HKX datasheet, NVT4557HKX pinout, NVT4557HKX application, or NVT4557HKX equivalent, this device delivers verified automatic enable/disable control via VCCB threshold detection, zero-clamping ESD architecture to protect host-side circuitry, and integrated pull-up/pull-down resistors eliminating external bias components in mobile SIM interface designs.

Technical Context

The NVT4557HKX implements an auto-sensing level-shifting architecture: its IO channel uses direction-detection logic with rising-edge one-shot acceleration and dual-pull-up networks (20 kΩ to VCCA on host side, 750 Ω to VCCB on SIM side), while RSTn and CLKn use unidirectional buffers from host to SIM. Shutdown sequencing-initiated by the EN pin-is ISO/IEC 7816-3 compliant, powering down RST_SIM first, then CLK_SIM and IO_SIM sequentially within microseconds.

EMI suppression is achieved via integrated series resistors (30 Ω ±30%) and input/output capacitance (8.5 pF) per SIM-side signal path, reducing harmonic emissions toward RF sections. The zero-clamping ESD architecture routes transient energy from SIM-side pins directly to GND through internal clamps, preventing stress propagation to the low-voltage host domain.

Key Specifications

Pinout & Package

Package: XQFN10 (SOT1160-1), plastic extremely thin quad flat no-lead package, 1.40 mm × 1.80 mm × 0.50 mm body, 0.4 mm pitch, 10-terminal footprint compatible with reflow soldering per J-STD-020D lead-free profile.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SIM card interface level translation applications.

Compared with MAX14778ETE+ and TXS0102DCUR, the NVT4557HKX uniquely integrates SIM-specific functions-including ISO 7816-3 shutdown, 8 kV system-level ESD, and 30 Ω/8.5 pF EMI filtering-enabling single-chip, certified-compliant SIM interface design without external passive components or layout compromises.

Availability

NVT4557HKX is available at Aetrix Electronics and suitable for mobile handset design, wireless modem integration, and IoT cellular gateway development requiring stable component supply, long-term lifecycle assurance, and RoHS/Dark Green compliance.

Supply support for NVT4557HKX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and mobile applications.

The NVT4557 product line is designed specifically for SIM/USIM card interface applications in space-constrained, EMI-sensitive mobile and IoT devices, delivering integrated level translation, ESD protection, and ISO-compliant power sequencing in wafer-level and XQFN packages.

FAQ

What is the function of the EN pin on the NVT4557HKX?

The EN pin on the NVT4557HKX is a hardware enable input that controls device activation and initiates ISO/IEC 7816-3-compliant shutdown sequencing. When pulled HIGH (≥0.65×VCCA), the NVT4557HKX operates normally; when driven LOW, it powers down RST_SIM first, followed by CLK_SIM and IO_SIM in sequence within microseconds. This ensures safe SIM card hot-swap and prevents data corruption during removal - a critical requirement for certified mobile and payment terminals using the NVT4557HKX.

Does the NVT4557HKX require external pull-up or pull-down resistors?

No, the NVT4557HKX integrates all required biasing resistors internally: a 20 kΩ pull-up on IO_HOST to VCCA, 100 kΩ pull-downs on CLK_HOST and RST_HOST to GND, and 750 Ω pull-downs on RST_SIM, CLK_SIM, and IO_SIM to VCCB. These eliminate the need for seven external resistors in typical SIM interface designs, reducing BOM count, PCB area, and layout complexity - a key advantage of the NVT4557HKX over discrete level-shifter solutions.

How does the NVT4557HKX handle ESD protection without affecting the host microcontroller?

The NVT4557HKX employs a zero-clamping ESD architecture that routes 8 kV IEC 61000-4-2 Level 4 transients from SIM-side pins (RST_SIM, CLK_SIM, IO_SIM, VCCB) directly to GND through internal clamps, preventing any ESD stress from propagating to the low-voltage host domain. This isolates the host microcontroller's 1.08–1.98 V I/O rails, removing the need for external TVS diodes or clamping circuits - a core reliability feature built into the NVT4557HKX design.

What is the maximum clock frequency supported by the NVT4557HKX?

The NVT4557HKX supports a maximum clock frequency of 10 MHz on the CLKn signal path, guaranteed across its full operating range (VCCA = 1.08–1.98 V, VCCB = 1.62–3.6 V, TA = –40 °C to +85 °C) with ≤30 pF SIM-side capacitive load. This meets the timing requirements of high-speed SIM interfaces used in LTE and 5G mobile platforms, and is validated in the NVT4557HKX datasheet Table 9 under dynamic characteristics.

Is the NVT4557HKX compatible with both 1.8 V and 3 V SIM cards?

Yes, the NVT4557HKX supports SIM card supply voltages from 1.62 V to 3.6 V, fully covering both 1.8 V and 3 V SIM card standards. Its VCCB supply input accepts either voltage level, and internal level-shifting buffers automatically adapt signal thresholds - enabling single-design compatibility across dual-voltage SIM deployments without hardware changes. This flexibility is explicitly specified in the NVT4557HKX datasheet Section 7 and Table 7.