NXP Semiconductors NVT4558HKX

Overview

NVT4558HKX from NXP Semiconductors is a dedicated SIM card interface level translator IC with integrated EMI filtering and 8 kV IEC 61000-4-2 ESD protection. It provides bidirectional voltage translation for IO, RSTn, and CLKn signals between a 1.08 V–1.98 V host microcontroller and a 1.62 V–3.6 V SIM card, supporting up to 10 MHz clock frequency while complying with ISO/IEC 7816-3 and JEDEC JESD76-2 standards - deployed in mobile phones and wireless modems.

For engineers reviewing the NVT4558HKX datasheet, NVT4558HKX pinout, NVT4558HKX application, or NVT4558HKX equivalent, key selection considerations include its automatic enable/disable behavior tied to VCCB thresholds (VCCB_EN = 1.62 V, VCCB_DIS = 0.8 V), zero-clamping ESD architecture isolating host-side stress, and XQFN10 package with 0.4 mm pitch requiring precise 100 nF local bypassing at both VCCA and VCCB.

Technical Context

The NVT4558HKX implements three independent level-shifting channels: two unidirectional (RST_HOST→RST_SIM, CLK_HOST→CLK_SIM) and one bidirectional (IO_HOST↔IO_SIM) using automatic direction control logic that detects rising/falling edges to manage drive state without external control signals. Its internal pull-up/pull-down resistors (5 kΩ on IO_HOST, 750 Ω/163 Ω on SIM side) and integrated 30 Ω series EMI filters on all SIM-side pins suppress harmonics per mobile RF coexistence requirements.

Shutdown is initiated via hardware EN pin or automatically when VCCB falls below 0.8 V, triggering a sequenced power-down of RST_SIM → CLK_SIM → IO_SIM within microseconds per ISO 7816-3. The device maintains robust isolation: ESD transients on VCCB or SIM pins are clamped to GND without coupling to VCCA, preserving host-side signal integrity.

Key Specifications

Pinout & Package

Package: XQFN10 (SOT1160-1), plastic extremely thin quad flat no-lead package; body dimensions 1.40 × 1.80 × 0.50 mm; 0.4 mm pitch; exposed thermal pad (not electrically connected).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SIM card interface level translation applications.

Compared with MAX14779EASA+ and NVT4557HKX, the NVT4558HKX uniquely integrates ISO 7816-3 shutdown sequencing, VCCB-triggered auto-enable, and certified 8 kV IEC 61000-4-2 ESD protection - eliminating four external components and reducing layout complexity in space-constrained mobile designs.

Availability

NVT4558HKX is available at Aetrix Electronics and suitable for mobile handsets, wireless modems, and secure payment terminals requiring stable component supply, long-term lifecycle support, and guaranteed RoHS-compliant sourcing.

Supply support for NVT4558HKX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor leader specializing in secure connectivity solutions for automotive, industrial, and mobile applications, with over 40 years of expertise in smart card interface technology.

The NVT4558HKX belongs to NXP's SIM interface translator product line, engineered specifically for seamless integration of legacy and next-generation SIM cards into ultra-low-voltage mobile processors while meeting stringent ESD, EMI, and ISO 7816 compliance requirements.

FAQ

What is the maximum clock frequency supported by the NVT4558HKX?

The NVT4558HKX supports a maximum clock frequency of 10 MHz on the CLK_SIM output, verified across the full operating temperature range (−40 °C to +85 °C) and supply ranges (VCCA = 1.08–1.98 V, VCCB = 1.62–3.6 V). This enables full-speed T=0 and T=1 protocol operation for 3G/4G/5G SIM cards without timing margin violations.

How does the NVT4558HKX handle ESD protection for the host processor?

The NVT4558HKX employs a zero-clamping ESD architecture that routes all transients from SIM-side pins (RST_SIM, CLK_SIM, IO_SIM) and VCCB directly to GND, preventing voltage stress from reaching the host-side VCCA domain. This protects sensitive 1.2 V I/Os in modern application processors without requiring additional TVS diodes.

Can the NVT4558HKX operate with a 1.2 V host and 3.0 V SIM card simultaneously?

Yes - the NVT4558HKX is explicitly designed for this configuration: VCCA = 1.2 V powers the host-side interface (RST_HOST, CLK_HOST, IO_HOST), while VCCB = 3.0 V supplies the SIM card side (RST_SIM, CLK_SIM, IO_SIM). Its level-shifting architecture maintains signal integrity and timing compliance across this voltage combination.

What happens to the SIM signals during power-down of the NVT4558HKX?

When EN is pulled LOW or VCCB drops below 0.8 V, the NVT4558HKX executes an ISO 7816-3 compliant shutdown sequence: RST_SIM is disabled first, followed by CLK_SIM, then IO_SIM - each driven low via internal pull-down resistors (750 Ω for RST/CLK, 163 Ω for IO) to prevent floating states and data corruption.

Is external bypass capacitance required for the NVT4558HKX, and if so, what value?

Yes - a 0.1 μF X5R/X7R ceramic capacitor must be placed directly at both VCCA and VCCB pins, with short traces to the GND pin. This is mandatory to stabilize supplies, meet ESD test requirements, and ensure reliable level translation; MLCCs with ESR < 500 mΩ are specified in the datasheet.