NXP Semiconductors NX3L2G66GT,115

Overview

NX3L2G66GT,115 from NXP Semiconductors is a dual low-ohmic SPST analog switch in XSON8 (SOT833-1) package, operating from 1.4 V to 4.3 V supply. It features 0.5 Ω typical ON resistance at 2.7 V/4.3 V, Schmitt-trigger enable inputs for noise immunity, and supports bidirectional signal routing up to VCC - used in portable audio routing and USB data path switching.

For engineers reviewing the NX3L2G66GT,115 datasheet, NX3L2G66GT,115 pinout, NX3L2G66GT,115 application, or NX3L2G66GT,115 equivalent, key selection criteria include ON-resistance flatness (0.13 Ω), −40 °C to +125 °C operation, ESD robustness (4 kV IEC61000-4-2), and 350 mA continuous switch current capability.

Technical Context

The NX3L2G66GT,115 implements two independent CMOS transmission gates with active-HIGH enable logic per channel. Each switch uses symmetrical n-channel/p-channel parallel topology to achieve low R_ON and minimal voltage-dependent variation across the full 0–V_CC signal range.

Schmitt-trigger action on both enable inputs (1E, 2E) ensures reliable switching with slow-rising control signals, while charge injection (≤6 pC) and crosstalk (−90 dB) are optimized for audio and high-fidelity analog signal paths. The device meets AEC-Q100-011 CDM ≥1000 V and IEC61000-4-2 contact discharge ≥4000 V.

Key Specifications

Pinout & Package

Package: XSON8 (SOT833-1), plastic extremely thin small outline package, no leads, 8 terminals, body size 1.0 × 1.95 × 0.5 mm.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar analog switch applications.

Compared with TXS0102DCUR and ADG821BRMZ, the NX3L2G66GT,115 uniquely combines dual-channel integration, Schmitt-trigger enable inputs, sub-0.2 Ω R_ON flatness, and 4 kV IEC61000-4-2 ESD protection - making it optimal for compact, noise-immune analog routing in portable industrial and consumer platforms.

Availability

NX3L2G66GT,115 is available at Aetrix Electronics and suitable for portable media players, industrial sensor nodes, and USB OTG reconfiguration requiring stable component supply across extended temperature ranges and high-reliability ESD environments.

Supply support for NX3L2G66GT,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and IoT applications.

The NX3L2G66GT,115 belongs to NXP's NX3L ultra-low-R_ON analog switch family, engineered specifically for high-fidelity signal routing in space-constrained, battery-operated portable electronics where power efficiency and signal integrity are co-critical.

FAQ

What is the maximum signal voltage that can pass through the NX3L2G66GT,115?

The NX3L2G66GT,115 supports analog signals from GND to V_CC, meaning the maximum allowable signal amplitude equals the applied supply voltage - up to +4.3 V. Exceeding V_CC on any switch terminal violates absolute maximum ratings and may cause latch-up or permanent damage. For 3.3 V systems, signals up to 3.3 V peak-to-peak are fully supported with no attenuation or distortion.

Does the NX3L2G66GT,115 require external pull-up or pull-down resistors on its enable pins?

No, the NX3L2G66GT,115 does not require external pull-up or pull-down resistors on the 1E and 2E pins because each enable input incorporates an internal Schmitt trigger with defined VIH/VIL thresholds across all supply voltages (e.g., VIH = 0.7×V_CC at 4.3 V). This eliminates floating-input risk and allows direct connection to open-drain or CMOS logic outputs without additional components.

Can the NX3L2G66GT,115 be used to switch differential USB 2.0 signals?

Yes, the NX3L2G66GT,115 is suitable for USB 2.0 differential switching: its 60 MHz −3 dB bandwidth exceeds USB 2.0's 480 Mbps Nyquist frequency (~240 MHz), and its matched R_ON (ΔR_ON ≤0.1 Ω) preserves differential impedance integrity. However, layout must maintain tight D+/D− trace pairing and minimize stub length - the device itself introduces <0.1 dB insertion loss at 240 MHz when biased at 3.3 V.

What is the thermal derating behavior of the NX3L2G66GT,115 above 118 °C?

For the XSON8 (SOT833-1) package of the NX3L2G66GT,115, total power dissipation derates linearly above 118 °C at 7.8 mW/K. At 125 °C ambient, P_tot is reduced from 250 mW to approximately 195 mW. This derating applies only to continuous operation; pulsed current (≤1 ms, <10% duty cycle) retains ±500 mA peak rating up to +125 °C per the datasheet limiting values table.

How does the NX3L2G66GT,115 handle charge injection during switching?

The NX3L2G66GT,115 specifies ≤6 pC typical charge injection at V_CC = 4.3 V, decreasing to ≤3 pC at lower supplies (1.5–3.3 V). This low charge injection minimizes voltage glitches on high-impedance nodes (e.g., ADC sample capacitors or op-amp inputs), supporting accurate sampling in precision measurement systems without requiring additional blanking or settling delay.