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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi NZT660A

Name: NZT660A
Brand: onsemi
SKU: NZT660A
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: NZT660A

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-261-4, TO-261AA

Datasheet:: NZT660A.pdf

Description:: TRANS PNP 60V 3A SOT-223-4

Quantity:: RFQ Add To RFQ list

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Inventory:19,908

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Product details

Overview

NZT660A from onsemi is a PNP low-saturation bipolar junction transistor designed for high-current switching in power management circuits, featuring −60 V V_CEO, −3 A continuous collector current, and −500 mV V_CE(sat) at I_C = −3 A / I_B = −300 mA - used in DC-DC converter output stages and industrial motor driver base drive circuits.

For engineers reviewing the NZT660A datasheet, pinout, applications, or equivalent options, key selection criteria include verified PNP polarity, SOT-223 thermal performance (R_JA = 62.5 °C/W), low saturation voltage under high load, and h_FE range of 250–550 at I_C = −500 mA.

Technical Context

This device operates as a medium-power PNP BJT with fixed-emitter configuration, optimized for linear and saturated switching modes. Its design emphasizes low V_CE(sat) and high h_FE at elevated currents, enabling efficient current amplification and minimal conduction loss in high-side switch topologies.

Thermal performance is defined for FR-4 PCBs (76 mm × 114 mm × 1.57 mm) with minimum land pattern; absolute maximum ratings assume T_J ≤ 150 °C, and pulsed operation requires consultation with onsemi per Note 2.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	−60 V - Maximum safe collector-to-emitter reverse bias before breakdown in open-base condition.
I_C (cont.)	−3 A - Continuous DC collector current capability without thermal runaway on standard PCB layout.
V_CE(sat)	−500 mV @ I_C = −3 A / I_B = −300 mA - Low conduction loss enabling <0.9 W dissipation at full load.
h_FE	250–550 @ I_C = −500 mA / V_CE = −2 V - High current gain reduces required base drive current.
f_T	75 MHz - Transition frequency supports switching up to ~10 MHz with adequate gain margin.
R_JA	62.5 °C/W - Thermal resistance enables 2 W total dissipation at ΔT = 125 °C above ambient.

Pinout & Package

SOT-223 (Case 318H) surface-mount package with integrated heat tab (pin 2/4 tied to collector); thermally enhanced for PCB copper pour mounting.

Pin/Terminal	Circuit Role	Design Meaning
1	Base	Control terminal; accepts negative current to turn on PNP conduction path.
2 & 4	Collector	Common collector node; electrically connected and thermally coupled to exposed pad for heat sinking.
3	Emitter	Power output terminal; connects to higher potential rail in high-side switch configurations.

Key Features

Feature	Design Value
Low V_CE(sat)	−500 mV at full 3 A load ensures <1 W conduction loss and reduced self-heating.
High h_FE	Min 250 at 500 mA enables compact base drive circuitry with low gate/base driver loading.
Pb-Free SOT-223	RoHS-compliant packaging with standardized tape-and-reel (4,000 pcs) for automated assembly.
Wide T_J Range	−55 °C to +150 °C operation supports deployment in automotive engine compartments and industrial enclosures.

Applications

DC-DC Converter Output Stage	Industrial Motor Driver Base Drive
Use Scenario: High-current synchronous buck converter output stage operating at 12–48 V input with 3 A peak load. IC Role / Device Role / Timing Role: PNP BJT used as high-side switch in complementary emitter-follower configuration to sink load current during off-cycle. Use Value: −500 mV V_CE(sat) minimizes conduction loss and improves efficiency over discrete alternatives with >700 mV drop.	Use Scenario: Stepper motor phase driver requiring precise current control and fast turn-off in factory automation systems. IC Role / Device Role / Timing Role: Medium-power PNP switch controlling base current of larger NPN output transistors in H-bridge gate driver ICs. Use Value: 250–550 h_FE ensures stable current mirroring and predictable base drive scaling across temperature.
LED Driver Current Sink	Overcurrent Protection Circuit
Use Scenario: Constant-current LED string driver for commercial lighting with 2–3 A nominal output. IC Role / Device Role / Timing Role: Linear current-regulating pass element in adjustable constant-current loop with sense resistor feedback. Use Value: Low V_CE(sat) maintains regulation accuracy while limiting thermal derating at full brightness.	Use Scenario: Fast-acting crowbar-style overcurrent detector in 24 V industrial PLC I/O modules. IC Role / Device Role / Timing Role: Trigger transistor that saturates rapidly upon fault detection to short-circuit supply and activate fuse or latch. Use Value: 75 MHz f_T supports sub-microsecond response time when paired with comparator output stage.

DC-DC Converter Output Stage

Industrial Motor Driver Base Drive

Use Scenario: High-current synchronous buck converter output stage operating at 12–48 V input with 3 A peak load.

IC Role / Device Role / Timing Role: PNP BJT used as high-side switch in complementary emitter-follower configuration to sink load current during off-cycle.

Use Value: −500 mV V_CE(sat) minimizes conduction loss and improves efficiency over discrete alternatives with >700 mV drop.

Use Scenario: Stepper motor phase driver requiring precise current control and fast turn-off in factory automation systems.

IC Role / Device Role / Timing Role: Medium-power PNP switch controlling base current of larger NPN output transistors in H-bridge gate driver ICs.

Use Value: 250–550 h_FE ensures stable current mirroring and predictable base drive scaling across temperature.

LED Driver Current Sink

Overcurrent Protection Circuit

Use Scenario: Constant-current LED string driver for commercial lighting with 2–3 A nominal output.

IC Role / Device Role / Timing Role: Linear current-regulating pass element in adjustable constant-current loop with sense resistor feedback.

Use Value: Low V_CE(sat) maintains regulation accuracy while limiting thermal derating at full brightness.

Use Scenario: Fast-acting crowbar-style overcurrent detector in 24 V industrial PLC I/O modules.

IC Role / Device Role / Timing Role: Trigger transistor that saturates rapidly upon fault detection to short-circuit supply and activate fuse or latch.

Use Value: 75 MHz f_T supports sub-microsecond response time when paired with comparator output stage.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP high-current switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MJD660T4G	V_CEO = −60 V, V_CE(sat) = −600 mV @ −3 A, h_FE = 100–300 - lower gain, higher saturation voltage.	Less suitable for low-loss linear regulation; better for digital switching where gain stability is secondary.	Select MJD660T4G only if cost sensitivity outweighs efficiency requirements and base drive headroom is ample.
PN3569	V_CEO = −60 V, I_C = −200 mA max, SOT-23 package - significantly lower current rating and thermal capacity.	Limited to signal-level or low-power switching; not viable for ≥1 A loads.	Use PN3569 only in space-constrained bias networks or pre-driver stages-not as direct replacement for NZT660A's power role.

Compared with MJD660T4G and PN3569, the NZT660A delivers superior combination of high h_FE, low V_CE(sat), and SOT-223 thermal robustness - making it uniquely suited for 1–3 A saturated switching where efficiency and drive simplicity are critical.

Availability

NZT660A is available at Aetrix Electronics and suitable for DC-DC converters, industrial motor drivers, LED current sinks, and overcurrent protection circuits requiring stable component supply and Pb-free compliance.

Supply support for NZT660A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, and cloud infrastructure markets.

The NZT660A belongs to onsemi's general-purpose bipolar transistor product line, engineered for reliable high-current switching in cost-sensitive industrial and power conversion applications where thermal performance and gain consistency are essential.

FAQ

What is the maximum continuous collector current rating for the NZT660A?

The NZT660A is rated for −3 A continuous collector current at T_A = 25 °C with specified PCB layout (FR-4, 76 mm × 114 mm). Derating applies above 25 °C ambient; full 3 A operation requires heatsinking or airflow to maintain junction temperature ≤150 °C. This rating is confirmed in the Absolute Maximum Ratings table of the official NZT660A/D datasheet.

Does the NZT660A have a built-in diode or ESD protection?

No, the NZT660A is a bare PNP bipolar junction transistor without integrated diodes or ESD protection structures. External flyback diodes must be added in inductive load applications, and system-level ESD protection should be implemented at board level. The datasheet does not list any internal protection features - only standard BJT junction characteristics are specified.

What is the pin configuration of the NZT660A in the SOT-223 package?

The NZT660A uses standard SOT-223 pinout: Pin 1 = Base, Pins 2 & 4 = Collector (internally connected and tied to the exposed thermal pad), Pin 3 = Emitter. This configuration is explicitly shown in the Marking Diagram and Case Outline drawing (Case 318H) in the NZT660A/D datasheet, revision 3.

How does the NZT660A differ from the NZT660 in terms of electrical specifications?

The NZT660A differs from NZT660 primarily in higher h_FE (250–550 vs. 100–300 at −500 mA) and lower V_CE(sat) (−500 mV vs. −550 mV at −3 A). V_CBO is also reduced to −60 V (vs. −80 V for NZT660), reflecting tighter process control for saturated switching rather than high-voltage blocking. Both share identical package, marking, and thermal specs.

Is the NZT660A suitable for use in automotive under-hood applications?

Yes, the NZT660A supports −55 °C to +150 °C junction temperature operation and is qualified for industrial environments. While not AEC-Q101 certified, its wide T_J range, Pb-free SOT-223 package, and proven reliability in motor drives make it suitable for non-safety-critical automotive under-hood functions - such as auxiliary pump control or HVAC blower regulation - provided system-level qualification is completed.

NZT660A Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-261-4, TO-261AA

Packaging:: Tape & Reel (TR)

Product Status:: Active

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 3 A

Voltage - Collector Emitter Breakdown (Max):: 60 V

Vce Saturation (Max) @ Ib, Ic:: 500mV @ 300mA, 3A

Current - Collector Cutoff (Max):: 100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 250 @ 500mA, 2V

Power - Max:: 2 W

Frequency - Transition:: 75MHz

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-223-4

NZT660A FAQ

1.How can I place an order for NZT660A through Aetrix?

Please submit a Request for Quotation (RFQ) for NZT660A on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for NZT660A reliable?

The price and inventory of NZT660A are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NZT660A is usually 5 days.

3.What payment methods are accepted for NZT660A?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NZT660A transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for NZT660A?

NZT660A orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your NZT660A order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for NZT660A?

For technical support, including NZT660A datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NZT660A requirements.

6.How does Aetrix verify that NZT660A is sourced from the original manufacturer or authorized distributors?

All NZT660A products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NZT660A meets industry standards.

7.What is the process for return or replacement of NZT660A?

All NZT660A units undergo pre-shipment inspection (PSI). If there is an issue with NZT660A, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The NZT660A part is unused and in its original packaging.

Return procedure for NZT660A:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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