Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

onsemi NZT751

Part No.:
NZT751
Manufacturer:
onsemi
Category:
Single Bipolar Transistors
Package:
TO-261-4, TO-261AA
Datasheet:
AetrixNZT751.pdf
Description:
TRANS PNP 60V 4A SOT-223-4
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

NZT751 from Fairchild Semiconductor is a PNP bipolar junction transistor engineered as a high-current driver for power switching and linear regulation, featuring -60 V VCEO, -4 A continuous collector current, and 75 MHz fT. It operates across -55°C to +150°C and delivers low saturation voltages (VCE(sat) = -0.3 V at IC = -1.0 A) in SOT-223-4L packaging for thermal efficiency in DC-DC converters and motor control stages.

For engineers reviewing the NZT751 datasheet, pinout, applications, or equivalent options, key selection criteria include its PNP polarity, -4 A IC rating, SOT-223 thermal performance (RθJA = 103°C/W), and verified hFE stability up to 2 A - critical for high-reliability industrial power stage design.

Technical Context

The NZT751 employs a silicon planar epitaxial structure optimized for fast switching and robust DC current gain, with hFE maintained at ≥75 up to IC = -2.0 A under VCE = -2.0 V bias. Its -80 V VCBO and -5 V VEBO support operation in high-voltage PNP configurations where base-emitter reverse tolerance and collector-base isolation are essential.

Thermal design is enabled by the SOT-223-4L package's integrated heat sink tab (Pin 4 = Collector), delivering 1.2 W total dissipation at 25°C ambient and 9.7 mW/°C derating. The device is characterized for pulsed operation (≤300 μs, ≤2% duty cycle), confirming suitability for PWM-driven loads requiring transient current capability beyond steady-state limits.

Key Specifications

Parameter Value and Actual Design Meaning
VCEO -60 V - Maximum safe collector-emitter voltage before breakdown in common-emitter configuration.
IC (Continuous) -4 A - Continuous DC collector current handling capacity, defining maximum load drive capability.
fT 75 MHz - Current gain-bandwidth product indicating usable frequency range for small-signal amplification or switching.
VCE(sat) -0.3 V at IC = -1.0 A - Low saturation voltage minimizes conduction loss in saturated-switch applications.
hFE 75 at IC = -50 mA to -1.0 A - Stable DC current gain ensures predictable base drive requirements across operating range.
RθJA 103 °C/W - Junction-to-ambient thermal resistance on standard FR-4 PCB, guiding heatsinking needs.

Pinout & Package

SOT-223-4L package with exposed collector tab (Pin 4) for enhanced thermal conduction; molded plastic body with 4 leads, footprint compatible with industry-standard SOT-223 land patterns.

Pin/Terminal Circuit Role Design Meaning
1 Base Control terminal for forward-biased PNP operation; requires negative base current relative to emitter.
2, 4 Collector Pins 2 and 4 are internally connected to collector; Pin 4 is the thermal pad - must be soldered to PCB copper for thermal management.
3 Emitter High-side reference terminal; connects to positive rail in high-side switch configurations.

Key Features

Feature Design Value
High current drive -4 A continuous collector current supports direct driving of solenoids, relays, and power MOSFET gates without external buffering.
Low VCE(sat) -0.3 V at -1.0 A enables <1.0 W conduction loss in switching regulators, improving efficiency at medium loads.
Wide temperature range -55°C to +150°C operating junction range allows deployment in automotive engine compartments and industrial motor drives.
Stable hFE vs. current hFE ≥75 up to -1.0 A ensures consistent base drive sizing across 10× current range, simplifying gate driver design.

Applications

DC-DC Converter High-Side Switch Linear Voltage Regulator Pass Element

Use Scenario: Used as the series pass transistor in adjustable positive-output linear regulators (e.g., with LM317-based feedback).

IC Role / Device Role / Timing Role: PNP pass element regulating output voltage by modulating emitter-collector current based on error amplifier signal.

Use Value: -60 V VCEO and -4 A IC enable stable 24–48 V output regulation with >3 A load capability and minimal dropout.

Use Scenario: Configured as high-side switch in non-synchronous buck converter topologies driving inductive loads.

IC Role / Device Role / Timing Role: Power switch controlling energy transfer from input to output inductor during ON phase.

Use Value: 75 MHz fT and low VCE(sat) support efficient 100–500 kHz switching with reduced switching losses and thermal stress.

Motor Driver H-Bridge Upper Arm Industrial Relay Driver Stage

Use Scenario: Integrated into discrete H-bridge circuits for bidirectional DC motor control in PLC I/O modules.

IC Role / Device Role / Timing Role: Upper-arm PNP switch enabling positive voltage application to motor terminal during forward drive.

Use Value: -80 V VCBO withstands inductive kickback spikes up to -75 V, eliminating need for external clamping diodes in 48 V systems.

Use Scenario: Directly drives 24 VDC industrial relays with coil currents up to 3.5 A in programmable logic controller outputs.

IC Role / Device Role / Timing Role: High-current interface between microcontroller GPIO and relay coil, providing galvanic isolation via optocoupler input stage.

Use Value: -4 A IC rating and -1.2 V VBE(sat) ensure full relay actuation with <100 ms response time and minimal base drive overhead.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP current driver applications.

Alternative Part Technical Difference Application Difference Selection Advice
MJD751 Same SOT-223-4L package and -60 V VCEO, but hFE min = 50 at -1 A (vs. NZT751's 75); RθJA = 110°C/W. Lower gain requires higher base drive current; slightly reduced thermal margin in high-ambient environments. Acceptable where base drive capability is ample and ambient temperature stays below 85°C.
ZTX751 TO-92 package (not SOT-223), -60 V VCEO, -2 A IC, hFE = 100 min at -500 mA; no thermal tab. Lower current rating and no surface-mount thermal pad limit use to low-power linear regulators or signal-level switching. Only suitable for space-constrained prototypes or low-current (<1.5 A) applications where SMT assembly is not required.

Compared with MJD751 and ZTX751, the NZT751 provides superior combination of high current (-4 A), high gain stability (hFE ≥75 to 1 A), and SOT-223 thermal performance - making it the preferred choice for production-grade industrial power stages demanding reliability and manufacturability.

Availability

NZT751 is available at Aetrix Electronics and suitable for DC-DC converters, motor drivers, and industrial relay interfaces requiring stable component supply, long-term lifecycle support, and traceable sourcing from original manufacturer channels.

Supply support for NZT751 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Fairchild Semiconductor (now part of ON Semiconductor) is a legacy analog and power semiconductor manufacturer known for high-reliability discrete transistors and power ICs targeting industrial and automotive markets.

The NZT751 belongs to Fairchild's Process 5P family of high-speed, high-current PNP transistors designed specifically for power switching and linear regulation in harsh-environment applications.

FAQ

What is the maximum continuous collector current rating for the NZT751?

The NZT751 has a maximum continuous collector current (IC) rating of -4 A at TA = 25°C. This rating assumes proper PCB thermal management using the SOT-223-4L package's exposed collector tab (Pin 4). Derating applies above 25°C at 9.7 mW/°C, and pulsed operation permits higher peak currents under defined duty cycle constraints per the datasheet.

Does the NZT751 support high-frequency switching applications?

Yes, the NZT751 features a current gain–bandwidth product (fT) of 75 MHz at IC = -50 mA, VCE = -5.0 V, and f = 100 MHz. This enables reliable operation in PWM-based power stages up to several hundred kHz. Its low VCE(sat) and fast turn-on/off characteristics - confirmed in typical performance curves - support efficient switching in non-synchronous buck and linear regulator designs.

How is thermal management implemented for the NZT751 in SOT-223-4L?

The NZT751 uses Pin 4 (and Pin 2) as the collector connection and thermal pad. For effective thermal management, Pin 4 must be soldered to a minimum 76 × 114 mm FR-4 PCB copper area with appropriate thermal vias. The datasheet specifies RθJA = 103°C/W under these conditions. Failure to connect Pin 4 reduces power dissipation capability significantly and risks thermal runaway at rated current.

What is the DC current gain (hFE) behavior of the NZT751 across its operating range?

The NZT751 maintains hFE ≥75 from IC = -50 mA up to -1.0 A at VCE = -2.0 V, then decreases to 40 at -2.0 A. This flat gain profile simplifies base drive design for loads up to 1 A. The datasheet confirms this behavior under standardized test conditions, and typical performance curves show minimal variation across -40°C to +125°C ambient temperatures.

Can the NZT751 replace NPN transistors in existing circuits?

No - the NZT751 is a PNP transistor and cannot directly replace NPN devices without circuit topology changes. Its polarity requires reversed biasing: the emitter connects to the higher potential (e.g., VCC), and base drive must sink current to turn on. Substitution would require redesigning base drive networks, feedback paths, and protection schemes to accommodate PNP operation and complementary voltage references.

NZT751 Specifications

Product attributes
Attribute value
Manufacturer:
onsemi
Series:
-
Package/Case:
TO-261-4, TO-261AA
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Transistor Type:
PNP
Current - Collector (Ic) (Max):
4 A
Voltage - Collector Emitter Breakdown (Max):
60 V
Vce Saturation (Max) @ Ib, Ic:
500mV @ 200mA, 2A
Current - Collector Cutoff (Max):
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:
40 @ 2A, 2V
Power - Max:
1.2 W
Frequency - Transition:
75MHz
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-223-4

NZT751 FAQ

1.How can I place an order for NZT751 through Aetrix?

Please submit a Request for Quotation (RFQ) for NZT751 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for NZT751 reliable?

The price and inventory of NZT751 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NZT751 is usually 5 days.

3.What payment methods are accepted for NZT751?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NZT751 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for NZT751?

NZT751 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your NZT751 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for NZT751?

For technical support, including NZT751 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NZT751 requirements.

6.How does Aetrix verify that NZT751 is sourced from the original manufacturer or authorized distributors?

All NZT751 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NZT751 meets industry standards.

7.What is the process for return or replacement of NZT751?

All NZT751 units undergo pre-shipment inspection (PSI). If there is an issue with NZT751, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The NZT751 part is unused and in its original packaging.

Return procedure for NZT751:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

NZT751 Tags

  • NZT751
  • NZT751 PDF
  • NZT751 Datasheet
  • NZT751 Specifications
  • NZT751 Images
  • onsemi
  • onsemi NZT751
  • Buy NZT751
  • NZT751 Price
  • NZT751 Distributor
  • NZT751 Supplier
  • NZT751 Wholesale
Related Products
MMBT3906LT1G
MMBT3906LT1G

onsemi

MMBT3904-7-F
MMBT3904-7-F

Diodes Incorporated

MMBT3904LT1G
MMBT3904LT1G

onsemi

MMBT3906-7-F
MMBT3906-7-F

Diodes Incorporated

MMBT3904-TP
MMBT3904-TP

Micro Commercial Co

MMBT2222A-7-F
MMBT2222A-7-F

Diodes Incorporated

BC846BLT1G
BC846BLT1G

onsemi

BC847B,215
BC847B,215

Nexperia USA Inc.

SMMBT3904LT1G
SMMBT3904LT1G

onsemi

MMBT2222A-TP
MMBT2222A-TP

Micro Commercial Co

MMBTA06LT1G
MMBTA06LT1G

onsemi

MMBT2222ALT1G
MMBT2222ALT1G

onsemi

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER