Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi NZT753

Name: NZT753
Brand: onsemi
SKU: NZT753
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: NZT753

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-261-4, TO-261AA

Datasheet:: NZT753.pdf

Description:: TRANS PNP 100V 4A SOT-223-4

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:10,530

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

NZT753 from onsemi is a PNP silicon power transistor designed for high-speed switching and linear power amplifier applications, featuring −100 V V_CEO, −4.0 A continuous collector current, 1.2 W total dissipation at 25°C, and 75 MHz transition frequency (f_T). It serves as a current driver in regulator feedback paths and motor control stages.

For engineers reviewing the NZT753 datasheet, pinout, applications, or equivalent options, key selection considerations include its SOT-223 package thermal performance (R_JA = 103°C/W), saturation voltage (V_CE(sat) = −0.3 V at I_C = −1.0 A), and junction temperature range (−55°C to +150°C) in high-reliability industrial power circuits.

Technical Context

This PNP bipolar junction transistor uses onsemi's Process 5P fabrication, optimized for speed and ruggedness in switching-regulator output stages and Class AB audio amplifier drivers. Its −120 V V_CBO and −5.0 V V_EBO support robust voltage margining in high-side configurations.

The device operates with DC current gain (h_FE) ranging from 55 to 300 across I_C = −50 mA to −1.0 A, and exhibits V_BE(sat) = −1.25 V at I_C = −1.0 A / I_B = −100 mA - enabling predictable base drive sizing in discrete power stage designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	−100 V: Maximum safe collector-emitter voltage under open-base conditions; defines usable headroom in high-side switch or series-pass regulator topologies.
I_C (cont.)	−4.0 A: Continuous collector current rating; sets maximum sustained load current capability before thermal derating applies.
P_D @ 25°C	1.2 W: Total power dissipation limit on FR-4 PCB (36 mm × 18 mm); requires thermal pad design for >0.8 W operation.
f_T	75 MHz: Transition frequency at V_CE = −5 V, I_C = −100 mA; indicates usable bandwidth for medium-frequency switching or RF driver use.
V_CE(sat)	−0.3 V @ I_C = −1.0 A: Low saturation voltage reduces conduction loss and self-heating in saturated-switch applications.
T_J Range	−55°C to +150°C: Extended junction temperature range supports operation in automotive under-hood and industrial motor-control environments.

Pinout & Package

SOT-223 (Case 318H) surface-mount package with integrated heat sink tab (pin 2, Collector) for enhanced thermal transfer. Standard 3-lead configuration with exposed collector pad soldered to PCB copper area ≥6 cm².

Pin/Terminal	Circuit Role	Design Meaning
1 (Base)	Control input	Receives forward-biased current to turn on PNP conduction; requires external current-limiting resistor in most driver circuits.
2 (Collector)	Power output node	Connected to high-side rail or load return path; electrically and thermally tied to exposed metal tab for heat dissipation.
3 (Emitter)	Reference terminal	Typically connected to system ground or positive supply rail in high-side switch configurations; carries full load current.

Key Features

Feature	Design Value
High-voltage PNP structure	−120 V V_CBO enables reliable operation in 48 V and 100 V bus systems with margin against transients.
Speed-optimized Process 5P	75 MHz f_T supports switching frequencies up to ~5–10 MHz in resonant or PWM-based regulators.
Low V_CE(sat)	−0.3 V at −1.0 A minimizes power loss and thermal stress during saturation, improving efficiency in linear and quasi-saturated modes.
Robust thermal design	R_JA = 103°C/W on standard FR-4 allows 0.8–1.0 W continuous dissipation with minimal board-level heatsinking.

Applications

DC Motor Driver Stage	Linear Voltage Regulator Pass Element
Use Scenario: Driving brushed DC motors in industrial actuators requiring bidirectional control via H-bridge half-bridge topology. IC Role / Device Role / Timing Role: PNP current driver in high-side switch leg, delivering up to −1.0 A load current with fast turn-off enabled by low stored charge. Use Value: −100 V V_CEO withstands inductive kickback; −0.3 V V_CE(sat) limits conduction loss to <300 mW at rated current.	Use Scenario: Series pass element in adjustable positive-output linear regulators powering FPGA core rails or analog sensor subsystems. IC Role / Device Role / Timing Role: High-current PNP pass transistor regulating output voltage via feedback-controlled base current. Use Value: h_FE ≥ 55 at −1.0 A ensures stable loop gain; −150°C max T_J supports operation under sustained 1.2 W dissipation.
Switching Power Supply Output Stage	Audio Amplifier Output Driver
Use Scenario: Primary-side switch in isolated flyback or forward converters operating at 100–500 kHz with active clamp or RCD snubber. IC Role / Device Role / Timing Role: High-voltage PNP switch controlling energy transfer into transformer primary winding. Use Value: 75 MHz f_T and low C_ob (implied by high f_T) reduce switching losses and enable clean turn-off waveforms.	Use Scenario: Complementary emitter-follower output stage in Class AB audio amplifiers driving 4 Ω or 8 Ω speakers. IC Role / Device Role / Timing Role: PNP output driver delivering peak currents >2 A with low distortion and thermal stability. Use Value: −4.0 A I_C rating and −55°C to +150°C T_J range ensure reliability during dynamic audio peaks and extended playback.

DC Motor Driver Stage

Linear Voltage Regulator Pass Element

Use Scenario: Driving brushed DC motors in industrial actuators requiring bidirectional control via H-bridge half-bridge topology.

IC Role / Device Role / Timing Role: PNP current driver in high-side switch leg, delivering up to −1.0 A load current with fast turn-off enabled by low stored charge.

Use Value: −100 V V_CEO withstands inductive kickback; −0.3 V V_CE(sat) limits conduction loss to <300 mW at rated current.

Use Scenario: Series pass element in adjustable positive-output linear regulators powering FPGA core rails or analog sensor subsystems.

IC Role / Device Role / Timing Role: High-current PNP pass transistor regulating output voltage via feedback-controlled base current.

Use Value: h_FE ≥ 55 at −1.0 A ensures stable loop gain; −150°C max T_J supports operation under sustained 1.2 W dissipation.

Switching Power Supply Output Stage

Audio Amplifier Output Driver

Use Scenario: Primary-side switch in isolated flyback or forward converters operating at 100–500 kHz with active clamp or RCD snubber.

IC Role / Device Role / Timing Role: High-voltage PNP switch controlling energy transfer into transformer primary winding.

Use Value: 75 MHz f_T and low C_ob (implied by high f_T) reduce switching losses and enable clean turn-off waveforms.

Use Scenario: Complementary emitter-follower output stage in Class AB audio amplifiers driving 4 Ω or 8 Ω speakers.

IC Role / Device Role / Timing Role: PNP output driver delivering peak currents >2 A with low distortion and thermal stability.

Use Value: −4.0 A I_C rating and −55°C to +150°C T_J range ensure reliability during dynamic audio peaks and extended playback.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP power transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MJD753	Same die, identical electrical specs; packaged in TO-252 (DPAK) instead of SOT-223.	Higher thermal mass and R_JA ≈ 62°C/W; better for >1.5 W continuous dissipation but larger footprint.	Select MJD753 when board space permits and higher steady-state power handling is required.
PN3569	Lower V_CEO (−60 V), lower I_C (−1.5 A), lower f_T (30 MHz); smaller SOT-23 package.	Not suitable for >48 V systems or >1 A loads; limited to low-power signal switching or bias networks.	Use PN3569 only in space-constrained, low-voltage (<40 V), sub-1 A applications where NZT753's performance is over-specified.

Compared with MJD753 and PN3569, the NZT753 uniquely balances high-voltage capability (−100 V), high-current drive (−4.0 A), and medium-frequency response (75 MHz) in the compact SOT-223 footprint - making it optimal for space-limited industrial power stages needing both ruggedness and speed.

Availability

NZT753 is available at Aetrix Electronics and suitable for DC motor control, linear voltage regulation, and switching power supply output stages requiring stable component supply and long-term industrial lifecycle support.

Supply support for NZT753 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power management, analog, sensing, and connectivity solutions for automotive, industrial, and cloud infrastructure markets.

The NZT753 belongs to onsemi's discrete power transistor product line, engineered for high-reliability linear and switching power applications demanding rugged voltage ratings, controlled saturation behavior, and consistent gain across current ranges.

FAQ

What is the maximum continuous collector current rating for the NZT753?

The NZT753 has a maximum continuous collector current (I_C) rating of −4.0 A at T_A = 25°C. This rating assumes proper PCB thermal management - specifically, mounting on an FR-4 board with a 6 cm² copper collector pad. Derating applies above 25°C per the 9.7 mW/°C spec, and actual usable current depends on ambient temperature and heatsinking. The NZT753 must not exceed its 1.2 W power dissipation limit under sustained operation.

Is the NZT753 pin-compatible with the MJD753?

No, the NZT753 is not pin-compatible with the MJD753. While both share identical electrical specifications and die, the NZT753 uses the SOT-223 package (3 leads, exposed collector tab), whereas the MJD753 uses the TO-252 (DPAK) package with different lead spacing and thermal pad layout. PCB layout and footprint must be redesigned to substitute one for the other. The NZT753 cannot serve as a drop-in replacement for the MJD753 without hardware revision.

What is the typical transition frequency (f_T) of the NZT753 and under what conditions is it measured?

The typical transition frequency (f_T) of the NZT753 is 75 MHz, measured at V_CE = −5 V, I_C = −100 mA, and f = 100 MHz. This parameter reflects the frequency at which the small-signal current gain drops to unity and indicates the device's usable bandwidth in amplifier or high-speed switching applications. The NZT753 maintains this f_T performance across its specified operating temperature range, supporting designs requiring medium-frequency response without requiring exotic packaging or biasing.

Can the NZT753 be used in a high-side switch configuration with a 48 V supply?

Yes, the NZT753 is suitable for high-side switch configurations with a 48 V supply. Its −100 V V_CEO and −120 V V_CBO provide ample voltage margin against transients and switching spikes. When used as a high-side switch, the emitter connects to the 48 V rail, the collector drives the load to ground, and the base is actively pulled low to turn on. The NZT753's low V_CE(sat) (−0.3 V) ensures minimal dropout and power loss in this configuration.

Does the NZT753 have Pb-free packaging and RoHS compliance?

Yes, the NZT753 is offered in a Pb-free (RoHS-compliant) SOT-223 package, as confirmed in the onsemi datasheet ordering information section. The marking "(Pb−Free)" appears explicitly next to the NZT753/SOT-223 entry, and the generic marking diagram notes Pb-free indicator options ("G" or microdot). All currently shipped NZT753 devices meet RoHS Directive 2011/65/EU requirements and are compatible with lead-free reflow soldering profiles.

NZT753 Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-261-4, TO-261AA

Packaging:: Tape & Reel (TR)

Product Status:: Active

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 4 A

Voltage - Collector Emitter Breakdown (Max):: 100 V

Vce Saturation (Max) @ Ib, Ic:: 300mV @ 50mA, 1A

Current - Collector Cutoff (Max):: 100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 100 @ 500mA, 2V

Power - Max:: 1.2 W

Frequency - Transition:: 75MHz

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-223-4

NZT753 FAQ

1.How can I place an order for NZT753 through Aetrix?

Please submit a Request for Quotation (RFQ) for NZT753 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for NZT753 reliable?

The price and inventory of NZT753 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NZT753 is usually 5 days.

3.What payment methods are accepted for NZT753?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NZT753 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for NZT753?

NZT753 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your NZT753 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for NZT753?

For technical support, including NZT753 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NZT753 requirements.

6.How does Aetrix verify that NZT753 is sourced from the original manufacturer or authorized distributors?

All NZT753 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NZT753 meets industry standards.

7.What is the process for return or replacement of NZT753?

All NZT753 units undergo pre-shipment inspection (PSI). If there is an issue with NZT753, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The NZT753 part is unused and in its original packaging.

Return procedure for NZT753:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…