NXP Semiconductors OM7691/BFU730F,598

Overview

OM7691/BFU730F,598 from NXP Semiconductors is an evaluation board featuring the BFU730F SiGe:C HBT transistor configured as a single-stage 5–6 GHz low-noise amplifier (LNA) for WLAN MIMO applications. It delivers 14.7 dB gain and 1.3 dB noise figure at 5.5 GHz with 3 V/10 mA supply, unconditional stability from 10 MHz to 20 GHz, and supports IEEE 802.11a/n systems.

For engineers reviewing the OM7691/BFU730F,598 datasheet, OM7691/BFU730F,598 pinout, OM7691/BFU730F,598 application, or OM7691/BFU730F,598 equivalent, this page provides verified measurement data, RF layout guidance, BOM details, switching time specs (160 µs on, 28 ns off), and design context for 5–6 GHz WLAN front-end integration.

Technical Context

The OM7691/BFU730F,598 implements a fixed-gain, DC-biased single-transistor LNA topology using the BFU730F in SOT343F package. Its design targets high linearity (IP3i = +10 dBm) and low noise in the 5–6 GHz band, with input/output return loss >12 dB and unconditional stability across 10 MHz–20 GHz per ADS simulation and measurement.

It uses 12 discrete passive components (0402-size Murata capacitors and inductors) for impedance matching, biasing, and decoupling. The PCB is FR4 (Er ≈ 4.75, tanδ = 0.02) with controlled-impedance RF traces, SMA end-launch connectors (Johnson 142-0701-841), and a 3-pin Molex DC header for bias control.

Key Specifications

Availability

OM7691/BFU730F,598 is available at Aetrix Electronics and suitable for 5–6 GHz WLAN reference design validation, RF front-end prototyping, and SiGe HBT characterization requiring stable component supply, repeatable measurement correlation, and documented layout practices.

Supply support for OM7691/BFU730F,598 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and consumer applications.

The OM7691/BFU730F,598 belongs to NXP's RF evaluation board portfolio targeting high-frequency wireless infrastructure and client device development, specifically designed to accelerate adoption of SiGe:C HBT transistors in 5 GHz WLAN front ends.

FAQ

What is the OM7691/BFU730F,598 used for?

The OM7691/BFU730F,598 is an evaluation board built around the BFU730F SiGe:C HBT transistor, configured as a 5–6 GHz low-noise amplifier for IEEE 802.11a/n MIMO WLAN applications. It serves as a reference design for RF front-end development, enabling rapid validation of gain, noise figure, linearity, and stability performance in real-world PCB layouts. Engineers use the OM7691/BFU730F,598 to verify matching network topologies and assess integration feasibility before custom design.

Does the OM7691/BFU730F,598 include the BFU730F transistor?

Yes, the OM7691/BFU730F,598 evaluation board integrates one BFU730F discrete HBT in SOT343F package as its active RF element. The BFU730F is mounted on a 20 × 35 mm FR4 PCB with controlled-impedance lines, SMA RF connectors, and a 3-pin Molex DC header for bias control - all documented in AN11007. The OM7691/BFU730F,598 is not a bare transistor but a fully assembled, tested LNA reference platform.

What are the key RF performance metrics of the OM7691/BFU730F,598 at 5.5 GHz?

At 5.5 GHz and 25 °C, the OM7691/BFU730F,598 delivers 14.7 dB power gain, 1.3 dB noise figure, 12 dB input return loss, 13.5 dB output return loss, −7.5 dBm input P1dB compression point, +10 dBm input IP3, and +24 dBm output IP3. These values were measured at the SMA connectors per AN11007 Table 3, with ~0.1 dB connector/PCB loss uncorrected. The OM7691/BFU730F,598 achieves unconditional stability across 10 MHz–20 GHz.

Can the OM7691/BFU730F,598 be used for faster switching applications?

Yes - the OM7691/BFU730F,598 supports configurable power settling time. Its default C3 capacitor (15 nF) yields Ton = 160 µs and Toff = 28 ns. For sub-microsecond turn-on (e.g., <1 µs), AN11007 recommends replacing C3 with 67 pF, reducing Ton to 890 ns while preserving Toff. Note that this change degrades IP3 by ~5 dB. The OM7691/BFU730F,598 thus enables trade-off analysis between speed and linearity in TDD WLAN systems.

Where can I find the schematic and bill of materials for the OM7691/BFU730F,598?

The full schematic, PCB layout, and bill of materials for the OM7691/BFU730F,598 are published in NXP Application Note AN11007 (Rev. 2, 20 November 2012). Figure 5 shows the schematic with Q1 = BFU730F, and Table 2 lists all 12 external components - including Murata GRM1555 capacitors (0402, 0.75–15 nF), LQP15/LQW15 inductors (0402, 1.5–9.1 nH), and Johnson SMA connectors. The OM7691/BFU730F,598 documentation is publicly accessible via nxp.com.