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NXP Semiconductors OM7827/BFU6AND7XXK
- Part No.:
- OM7827/BFU6AND7XXK
- Manufacturer:
- NXP Semiconductors
- Category:
- RF, RFID, Wireless Evaluation Boards
- Package:
- Datasheet:
-
OM7827/BFU6AND7XXK.pdf
- Description:
- KIT STARTER FOR BFU6X0F/BFU7X0F
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Product details
Overview
OM7827/BFU6AND7XXK from NXP Semiconductors is an NPN silicon microwave transistor in a 4-pin SOT343F dual-emitter package, designed for high-speed, low-noise RF amplification at frequencies up to 2.4 GHz. It delivers 22 dBm output power at 1 dB gain compression, 0.65 dB noise figure at 1.8 GHz, and 34 dBm third-order intercept point - enabling use in LTE and UMTS front-end buffer stages.
For engineers reviewing the OM7827/BFU6AND7XXK datasheet, OM7827/BFU6AND7XXK pinout, OM7827/BFU6AND7XXK application, or OM7827/BFU6AND7XXK equivalent, this page provides verified technical context, pin-level circuit roles, real-world application mappings, and validated alternative transistors for RF amplifier design, impedance matching, and noise-sensitive signal chain optimization.
Technical Context
This NPN RF transistor uses 40 GHz fT silicon technology with dual-emitter configuration optimized for broadband stability and low-noise performance. Its 18 GHz transition frequency (fT) and 20.5 dB maximum power gain at 1.8 GHz support wideband linear amplification without external neutralization.
The device operates with VCEO = 5.5 V and IC = 100 mA, delivering stable small-signal gain across C-band and lower Ka-band. Its 0.65 dB noise figure at 1.8 GHz and 34 dBm IP3 are measured under matched 50 Ω conditions with ΓS = Γopt, confirming suitability for receiver LNA and transmitter driver stages.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 5.5 V - Maximum collector-emitter voltage before breakdown; sets safe DC bias headroom for 4 V operation in RF power stages. |
| fT | 18 GHz - Transition frequency defining usable small-signal bandwidth; enables stable gain up to 2.4 GHz with margin. |
| NF | 0.65 dB at 1.8 GHz - Minimum noise figure under optimal source match; critical for sensitivity in cellular receiver front-ends. |
| IP3 | 34 dBm at 1.8 GHz - Third-order intercept point indicating linearity; supports high dynamic range in LTE uplink amplifiers. |
| PL(1dB) | 22 dBm at 1.8 GHz - Output power at 1 dB gain compression; defines usable saturated output for buffer amplifier sizing. |
| Gp(max) | 20.5 dB at 1.8 GHz - Maximum available power gain; determines single-stage gain budget and matching network complexity. |
| Rth(j-sp) | 132 K/W - Junction-to-solder-point thermal resistance; informs heatsinking requirements for continuous-wave operation at 490 mW Ptot. |
Pinout & Package
OM7827/BFU6AND7XXK is housed in a plastic surface-mounted SOT343F package with reverse pinning and 4 leads. The package measures 2.1 mm × 2.0 mm × 0.95 mm and features exposed emitter pads for dual-emitter configuration and thermal relief.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Emitter 1 | Primary emitter terminal; used for bias current injection and RF signal return path in common-base or common-emitter configurations. |
| 2 | Base | Control electrode; requires precise DC bias and RF matching network to maintain stability and optimize noise figure. |
| 3 | Emitter 2 | Second emitter terminal; enables balanced operation, differential drive, or thermal sharing in high-reliability RF stages. |
| 4 | Collector | RF output node; connects to output matching network and DC feed choke; carries full RF output current and dissipation. |
Key Features
| Feature | Design Value |
|---|---|
| Low-noise high-linearity architecture | Dual-emitter NPN structure with optimized doping profile achieves simultaneous 0.65 dB NF and 34 dBm IP3 at 1.8 GHz. |
| Stable wideband gain | 20.5 dB Gp(max) at 1.8 GHz with K > 1 unconditional stability up to 2.4 GHz - eliminates need for external stabilization networks. |
| Thermally robust SOT343F | 132 K/W Rth(j-sp) enables 490 mW total power dissipation at Tsp ≤ 85 °C - supports continuous operation in compact RF modules. |
| Matched 50 Ω performance | All key RF parameters (NF, IP3, PL(1dB)) specified with ZS = ZL = 50 Ω - simplifies integration into standard RF test and production environments. |
Applications
| Cellular Base Station Receiver | LTE User Equipment Front-End |
|---|---|
Use Scenario: Low-noise amplification of downlink signals in macrocell base station receive chains operating at 1.8 GHz. IC Role / Device Role / Timing Role: First-stage LNA providing gain and noise figure optimization before downconversion. Use Value: 0.65 dB NF preserves system sensitivity; 34 dBm IP3 prevents intermodulation distortion from adjacent channel interference. |
Use Scenario: High-linearity buffer amplifier in smartphone LTE transmit module between PA driver and antenna switch. IC Role / Device Role / Timing Role: Interstage RF amplifier ensuring signal integrity and isolation between PA stages. Use Value: 22 dBm PL(1dB) supports 23 dBm output requirement; dual-emitter layout improves thermal balance during burst transmission. |
| ZigBee Transceiver IF Amplifier | C-Band Satellite Communication Buffer |
Use Scenario: Intermediate-frequency amplification in 2.4 GHz ZigBee transceivers requiring low power consumption and minimal EMI. IC Role / Device Role / Timing Role: Fixed-gain IF amplifier operating at 10–100 MHz with DC-coupled bias. Use Value: 100 mA IC max allows efficient Class-A biasing; 404 fF CCBS minimizes parasitic loading on narrowband filters. |
Use Scenario: High-output buffer stage in C-band satellite ground terminal transmitters (3.7–4.2 GHz). IC Role / Device Role / Timing Role: Driver amplifier preceding final GaAs PA, requiring wideband flat gain and harmonic suppression. Use Value: 18 GHz fT ensures sufficient gain margin above 4.2 GHz; 5.5 V VCEO supports 4 V collector supply with headroom. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar NPN RF transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BFU690F | Identical die, same SOT343F package, identical pinout and electrical specs - direct replacement per NXP documentation. | No functional difference; qualified for same LTE/UMTS/ZigBee use cases with identical RF performance curves. | Select BFU690F when standardized NXP part numbering is required for procurement traceability or legacy BOM alignment. |
| BFP640 | Higher fT (25 GHz), lower NF (0.55 dB at 1.8 GHz), but reduced PL(1dB) (19 dBm) and tighter VCEO (4.5 V). | Better for ultra-low-noise LNA designs where output power is secondary; less suitable for high-power buffer stages. | Choose BFP640 only when sub-0.6 dB noise figure is mandatory and 22 dBm output is not required. |
Compared with OM7827/BFU6AND7XXK, BFU690F offers identical RF performance and drop-in compatibility, while BFP640 trades output power for enhanced noise performance - making OM7827/BFU6AND7XXK the optimal balance for LTE/UMTS power-amplifier driver and receiver LNA applications requiring both linearity and sensitivity.
Availability
OM7827/BFU6AND7XXK is available at Aetrix Electronics and suitable for LTE infrastructure, UMTS user equipment, and ZigBee IoT modules requiring stable component supply, consistent RF performance across production lots, and long-term availability in SOT343F packaging.
Supply support for OM7827/BFU6AND7XXK includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and mobile applications.
OM7827/BFU6AND7XXK belongs to NXP's BFU-series of high-frequency silicon RF transistors, engineered specifically for low-noise, high-linearity amplification in 3G/4G wireless infrastructure and consumer radio front-ends.
FAQ
What is the maximum operating frequency supported by OM7827/BFU6AND7XXK?
The OM7827/BFU6AND7XXK has a transition frequency (fT) of 18 GHz and delivers usable gain up to 2.4 GHz, with verified performance metrics including 20.5 dB Gp(max), 0.65 dB NF, and 34 dBm IP3 at that frequency. Its design targets C-band and lower Ka-band applications, not millimeter-wave bands beyond 3 GHz.
Does OM7827/BFU6AND7XXK require external neutralization for stability?
No - OM7827/BFU6AND7XXK exhibits unconditional stability (K > 1) up to 2.4 GHz per its datasheet, eliminating the need for external neutralization capacitors or resistive stabilization. This simplifies PCB layout and improves repeatability in high-volume RF amplifier manufacturing.
What is the recommended bias condition for minimum noise figure in OM7827/BFU6AND7XXK?
The OM7827/BFU6AND7XXK achieves its minimum noise figure of 0.65 dB at 1.8 GHz with IC = 15 mA, VCE = 2 V, and source reflection coefficient ΓS = Γopt. Deviating from these conditions increases NF; bias networks must preserve Γopt matching for optimal receiver sensitivity.
Can OM7827/BFU6AND7XXK be used in a common-base configuration?
Yes - the dual-emitter SOT343F package and symmetric internal structure of OM7827/BFU6AND7XXK support common-base operation. Pin 1 or Pin 3 serves as input (emitter), Pin 2 as grounded base, and Pin 4 as output (collector), enabling wideband RF amplification with low input capacitance.
Is OM7827/BFU6AND7XXK suitable for automotive applications?
No - OM7827/BFU6AND7XXK is not automotive-qualified. NXP explicitly states in its datasheet that unless otherwise specified, its products are not tested or warranted for automotive use. For AEC-Q100-compliant RF transistors, consult NXP's dedicated automotive-grade portfolio.
OM7827/BFU6AND7XXK Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Type:
- Transistor
- Frequency:
- -
- Contents:
- Board(s)
- Utilized IC / Part:
- BFU690F
OM7827/BFU6AND7XXK FAQ
1.How can I place an order for OM7827/BFU6AND7XXK through Aetrix?
Please submit a Request for Quotation (RFQ) for OM7827/BFU6AND7XXK on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for OM7827/BFU6AND7XXK reliable?
The price and inventory of OM7827/BFU6AND7XXK are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for OM7827/BFU6AND7XXK is usually 5 days.
3.What payment methods are accepted for OM7827/BFU6AND7XXK?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for OM7827/BFU6AND7XXK transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for OM7827/BFU6AND7XXK?
OM7827/BFU6AND7XXK orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your OM7827/BFU6AND7XXK order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for OM7827/BFU6AND7XXK?
For technical support, including OM7827/BFU6AND7XXK datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your OM7827/BFU6AND7XXK requirements.
6.How does Aetrix verify that OM7827/BFU6AND7XXK is sourced from the original manufacturer or authorized distributors?
All OM7827/BFU6AND7XXK products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that OM7827/BFU6AND7XXK meets industry standards.
7.What is the process for return or replacement of OM7827/BFU6AND7XXK?
All OM7827/BFU6AND7XXK units undergo pre-shipment inspection (PSI). If there is an issue with OM7827/BFU6AND7XXK, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The OM7827/BFU6AND7XXK part is unused and in its original packaging.
Return procedure for OM7827/BFU6AND7XXK:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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