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Texas Instruments ONET8501TYS

Part No.:
ONET8501TYS
Manufacturer:
Texas Instruments
Category:
Instrumentation, Op Amps, Buffer Amps
Package:
Die
Datasheet:
AetrixONET8501TYS.pdf
Description:
IC TRANSIMPEDANCE 1 CIRC DIESALE
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,296

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Product details

Overview

ONET8501TYS from Texas Instruments is a 11.3 Gbps limiting transimpedance amplifier (TIA) for optical receivers, featuring 10 GHz bandwidth, 7 kΩ differential small-signal transimpedance, 2.5 mAPP input overload current, and integrated RSSI. It operates from a single 3.3 V supply and is optimized for TO-can packaging in PIN/APD-based SFP+ and 10G Ethernet receivers.

For engineers reviewing the ONET8501TYS datasheet, ONET8501TYS pinout, ONET8501TYS application, or ONET8501TYS equivalent, key selection criteria include transimpedance stability across temperature, CML output termination compatibility, RSSI bias configuration (internal vs. external), and die-level assembly requirements for high-frequency photodiode interfacing.

Technical Context

The ONET8501TYS implements a three-stage signal path: a transimpedance amplifier with AGC-controlled gain reduction above threshold input current, a limiting voltage amplifier, and a CML output buffer with on-chip 50 Ω back-termination to VCC_OUT. Its dual-supply architecture isolates VCC_IN (for TIA) from VCC_OUT (for voltage/CML stages) to suppress supply noise coupling.

Filter circuitry includes an on-die 220 Ω resistor and capacitor network at FILTER1/FILTER2 to generate low-noise, low-pass-filtered bias for PIN photodiodes; RSSI generation is derived either from internal bias current (RSSI_IB) or external bias current (RSSI_EB), with distinct accuracy trade-offs depending on photodiode type and biasing method.

Key Specifications

ParameterValue and Actual Design Meaning
Small-signal transimpedance7 kΩ typical - sets gain scaling between photodiode current and differential output voltage
Small-signal bandwidth10 GHz - enables full-rate operation up to 11.3 Gbps with PRBS31 patterns
Input overload current2.5 mAPP - defines maximum peak-to-peak photocurrent before AGC-induced distortion
RSSI output typeCurrent-mode (RSSI_IB/RSSI_EB) - requires external resistor to ground for voltage conversion; max RSSI voltage = VCC – 0.65 V
Supply voltage range2.97 V to 3.63 V - supports industrial-grade 3.3 V ±10% rails with <105 mW typical power dissipation
Operating temperature–40°C to +100°C case - validated for TO-can packaging in telecom and datacom modules
Differential output impedance50 Ω back-terminated to VCC - eliminates need for external series termination in CML interface

Pinout & Package

ONET8501TYS is supplied as a bare die (DIESALE package) measuring 940 μm × 1195 μm, intended for hybrid assembly into TO-46 or similar hermetic optical cans. Bond pad layout is fixed per TI's die map; no leadframe or molded package is provided.

Pin/TerminalCircuit RoleDesign Meaning
INAnalog inputPhotodiode anode connection point; low-capacitance node requiring minimal bond-wire inductance (<0.5 nH)
OUT+, OUT–Differential CML outputsOn-chip 50 Ω pull-up to VCC_OUT; must be AC-coupled (e.g., 0.1 μF) to downstream receiver
RSSI_IB, RSSI_EBRSSI current outputsRSSI_IB used with internal PD bias (higher accuracy); RSSI_EB used with external APD/PIN bias (lower accuracy)
VCC_IN, VCC_OUTSeparated suppliesVCC_IN powers TIA stage only; VCC_OUT powers voltage amplifier and CML buffer - prevents supply noise coupling
FILTER1, FILTER2Photodiode bias filter nodesInternally connected to 220 Ω resistor and capacitor; provide filtered DC bias for PIN diodes when used with internal bias
GND (pins 4,8,13–19)Ground referenceAll 12 GND pads are internally shorted; bonding ≥4 pads recommended for optimal RF grounding and thermal conduction

Key Features

FeatureDesign Value
Integrated RSSI with dual bias modesEnables real-time optical power monitoring in both internally biased (PIN) and externally biased (APD) configurations, with calibrated current output scaling
On-die supply filteringEliminates need for external VCC_IN/VCC_OUT bypass capacitors; reduces board area and parasitic inductance in high-speed optical modules
AGC-enabled limiting architectureMaintains stable differential output amplitude (240–350 mVPP) across 16–2000 μAPP input range, minimizing jitter growth under overload
CML outputs with on-chip 50 Ω terminationDirect interface to standard CML receivers without external resistors; simplifies layout and improves signal integrity at 10+ Gbps
Die-level thermal and electrical characterizationSpecified from –40°C to +100°C case temperature; supports reliable operation in sealed TO-can environments with controlled thermal resistance

Applications

SFP+ Optical Receiver10G Ethernet Line Card

Use Scenario: High-density pluggable transceiver module receiving 10.3125 Gbps optical signals over multimode fiber.

IC Role / Device Role / Timing Role: Limiting TIA converts PIN photodiode current to clean CML data stream; RSSI_IB monitors received optical power for link diagnostics.

Use Value: 10 GHz bandwidth and 2.5 mAPP overload tolerance ensure robust eye opening and low deterministic jitter (<13 psPP) under real-world signal degradation.

Use Scenario: Front-panel optical interface on enterprise switch line card supporting IEEE 802.3ae 10GBASE-SR.

IC Role / Device Role / Timing Role: Primary TIA in compact, low-power optical subassembly; VCC_IN/VCC_OUT separation minimizes supply-induced jitter on recovered clock/data paths.

Use Value: On-die 50 Ω CML termination and integrated supply filtering reduce BOM count by 4 passive components per channel versus discrete TIA solutions.

SONET OC-192 TerminalAPD-Based Long-Haul Receiver

Use Scenario: SONET/SDH framer card receiving 9.953 Gbps optical signals in telecom central office equipment.

IC Role / Device Role / Timing Role: High-linearity TIA with 7 kΩ transimpedance provides sufficient gain for low-sensitivity PIN diodes while maintaining BER <10⁻¹² at –14 dBm.

Use Value: Input-referred RMS noise of 0.9–1.6 μA enables sensitivity margin for aging fiber links and connector loss accumulation.

Use Scenario: Extended-reach optical receiver using avalanche photodiode (APD) for 20 km SMF links in metro networks.

IC Role / Device Role / Timing Role: TIA configured with external APD bias; RSSI_EB provides coarse optical power indication despite reduced accuracy versus RSSI_IB.

Use Value: Dual-supply isolation (VCC_IN/VCC_OUT) prevents APD bias ripple from modulating TIA gain or introducing deterministic jitter in sensitive analog front-end.

Equivalent & Alternatives

The following parts are listed as comparable options for similar limiting transimpedance amplifier applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
MAX3748AETE+Single 3.3 V supply; 10.7 Gbps max rate; 6.5 kΩ transimpedance; no integrated RSSILacks RSSI functionality; requires external RSSI circuit if optical power monitoring neededSelect when RSSI is unnecessary and board space allows external monitoring circuitry
LMH6525MA/NOPB3.3 V or 5 V supply; 10.3 Gbps; 5.5 kΩ transimpedance; no on-die termination or RSSIRequires external 50 Ω termination and separate RSSI IC; higher system-level component countSelect when multi-supply flexibility is required and full integration is not critical

Compared with MAX3748AETE+ and LMH6525MA/NOPB, the ONET8501TYS delivers tighter integration-combining RSSI, dual-supply isolation, on-die 50 Ω termination, and photodiode bias filtering-reducing total solution size and improving high-speed signal integrity in space-constrained optical modules.

Availability

ONET8501TYS is available at Aetrix Electronics and suitable for SFP+, 10G Ethernet, and SONET OC-192 optical receiver designs requiring stable component supply, high-volume die procurement, and long-term lifecycle continuity.

Supply support for ONET8501TYS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor company specializing in analog, embedded processing, and high-speed interface solutions for communications, industrial, and automotive markets.

The ONET8501TYS belongs to TI's ONET family of high-speed optical receiver ICs, designed specifically for cost-sensitive, high-volume optical transceivers operating at 10+ Gbps data rates in telecom and datacom infrastructure.

FAQ

What is the primary function of the ONET8501TYS in an optical receiver?

The ONET8501TYS functions as a limiting transimpedance amplifier that converts photodiode current into a clean, differential CML data stream. It provides 7 kΩ transimpedance gain, 10 GHz bandwidth, automatic gain control, and received signal strength indication (RSSI) - all within a single die optimized for TO-can optical packaging. The ONET8501TYS is essential for recovering high-fidelity 10+ Gbps signals in SFP+, 10G Ethernet, and SONET OC-192 receivers.

Does the ONET8501TYS require external termination resistors on its CML outputs?

No, the ONET8501TYS integrates 50 Ω on-chip back-termination to VCC_OUT on both OUT+ and OUT– pins. This eliminates the need for external series or parallel termination resistors. However, AC coupling (e.g., 0.1 μF capacitors) is mandatory between the ONET8501TYS outputs and the downstream CML receiver to block DC offset and ensure proper common-mode voltage alignment.

How does RSSI operation differ between RSSI_IB and RSSI_EB on the ONET8501TYS?

RSSI_IB provides higher-accuracy RSSI output when the photodiode is biased via the ONET8501TYS's internal FILTER1/FILTER2 circuitry (e.g., with PIN diodes). RSSI_EB is intended for externally biased photodiodes (e.g., APDs) and offers lower accuracy due to dependence on external bias circuitry. For both, the output is a current proportional to input signal strength, requiring an external resistor to ground - and the voltage at the RSSI pad must not exceed VCC – 0.65 V.

What thermal and mechanical considerations apply to the ONET8501TYS die?

The ONET8501TYS die measures 940 μm × 1195 μm and is specified for operation from –40°C to +100°C case temperature. It must be mounted in a thermally conductive package (e.g., TO-46 can) with low thermal resistance to heatsink or module housing. All 12 GND pads should be bonded to minimize inductance and improve RF grounding; bond wire length on IN, OUT+, and OUT– must be kept below 0.5 nH to preserve 10 GHz bandwidth.

Can the ONET8501TYS operate with a 2.5 V supply instead of 3.3 V?

No - the ONET8501TYS is specified only for 2.97 V to 3.63 V operation (3.3 V ±10%). Operation outside this range violates absolute maximum ratings and may cause functional failure or permanent damage. The internal CML output buffers, AGC circuitry, and RSSI current sources are designed around this supply window; no 2.5 V operation mode or characterization is provided in the datasheet for ONET8501TYS.

ONET8501TYS Specifications

Product attributes
Attribute value
Manufacturer:
Texas Instruments
Series:
-
Package/Case:
Die
Packaging:
Bulk
Product Status:
Active
Amplifier Type:
Transimpedance
Number of Circuits:
1
Output Type:
-
Slew Rate:
-
Gain Bandwidth Product:
-
-3db Bandwidth:
10 GHz
Current - Input Bias:
-
Voltage - Input Offset:
-
Current - Supply:
28mA
Current - Output / Channel:
-
Voltage - Supply Span (Min):
2.97 V
Voltage - Supply Span (Max):
3.63 V
Operating Temperature:
-40°C ~ 100°C
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
Diesale

ONET8501TYS FAQ

1.How can I place an order for ONET8501TYS through Aetrix?

Please submit a Request for Quotation (RFQ) for ONET8501TYS on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for ONET8501TYS reliable?

The price and inventory of ONET8501TYS are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ONET8501TYS is usually 5 days.

3.What payment methods are accepted for ONET8501TYS?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ONET8501TYS transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for ONET8501TYS?

ONET8501TYS orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your ONET8501TYS order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for ONET8501TYS?

For technical support, including ONET8501TYS datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ONET8501TYS requirements.

6.How does Aetrix verify that ONET8501TYS is sourced from the original manufacturer or authorized distributors?

All ONET8501TYS products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ONET8501TYS meets industry standards.

7.What is the process for return or replacement of ONET8501TYS?

All ONET8501TYS units undergo pre-shipment inspection (PSI). If there is an issue with ONET8501TYS, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The ONET8501TYS part is unused and in its original packaging.

Return procedure for ONET8501TYS:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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