Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Texas Instruments ONET8551TY

Part No.:
ONET8551TY
Manufacturer:
Texas Instruments
Category:
Instrumentation, Op Amps, Buffer Amps
Package:
Die
Datasheet:
AetrixONET8551TY.pdf
Description:
IC TRANSIMPEDANCE 1 CIRC DIESALE
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,800

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

ONET8551TY from Texas Instruments is a 11.3-Gbps limiting transimpedance amplifier (TIA) optimized for optical receiver front-ends in high-speed fiber communication systems. It delivers 9-GHz bandwidth, –20-dBm sensitivity at 10.3125 Gbps, and 10-kΩ differential small-signal transimpedance, operating from a single +3.3-V supply with 92-mW typical power dissipation in die form for TO-can packaging.

For engineers reviewing the ONET8551TY datasheet, ONET8551TY pinout, ONET8551TY application, or ONET8551TY equivalent, key selection criteria include input-referred noise (0.9 μARMS), RSSI support for both internal and external photodiode biasing, CML outputs with on-chip 50-Ω back-termination, bandwidth adjustment via BW0/BW1 digital inputs, and operation across –40°C to 100°C case temperature.

Technical Context

The ONET8551TY integrates a transimpedance amplifier stage followed by a limiting voltage amplifier and CML output buffer, with separate VCC_IN and VCC_OUT supplies enabling independent biasing of TIA and AGC/output stages. Its signal path includes DC input bias cancellation, automatic gain control (AGC), and dual RSSI outputs (RSSI_IB and RSSI_EB) calibrated for PIN and APD photodiodes respectively.

Bandwidth is digitally configurable via BW0 and BW1 pins-grounding either or both increases bandwidth up to 9 GHz; leaving both open reduces bandwidth. The die includes on-chip supply filter capacitors and requires conductive epoxy attachment to ground via its back-side metal, with bond-wire inductance sensitivity (≤0.5 nH) and photodiode capacitance (≤0.2 pF) critical to achieving specified AC performance.

Key Specifications

ParameterValue and Actual Design Meaning
Data RateUp to 11.3 Gbps - supports 10-G Ethernet, 10-G Fibre Channel, and 10-G EPON line rates
Small-Signal Bandwidth9 GHz - enables full compliance with OC-192/STM-64 and CPRI/OBSAI 10-G interfaces
Transimpedance Gain10 kΩ differential - provides high gain for low-light optical signals while maintaining stability
Sensitivity–20 dBm at 10.3125 Gbps - meets BER 10–12 requirement for SONET OC-192 receivers
Input Noise0.9 μARMS - ensures robust signal recovery under low photocurrent conditions
Power Dissipation92 mW typical - enables thermal management in compact TO-can modules without active cooling
Operating Temperature–40°C to 100°C case - qualified for industrial and telecom infrastructure environments

Pinout & Package

ONET8551TY is supplied as a bare die (DIESALE package) with dimensions 870 μm × 1036 μm and thickness 203 ±13 μm. It features 20 bond pads arranged in a defined top-view layout and requires conductive epoxy mounting to ground on its back-side metal.

Pin/TerminalCircuit RoleDesign Meaning
INAnalog inputPhotodiode anode connection to TIA input; sensitive to parasitic inductance and capacitance
VCC_INSupplyDedicated 2.8–3.63 V supply for TIA stage; isolated from VCC_OUT to minimize supply coupling
VCC_OUTSupply2.8–3.63 V supply for AGC, RSSI, and CML output stages; powers on-chip 50-Ω terminations
OUT+ / OUT–Analog outputDifferential CML data outputs with integrated 50-Ω pull-up to VCC; require AC coupling to downstream logic
RSSI_IB / RSSI_EBAnalog outputCurrent-mode RSSI outputs - RSSI_IB for internally biased PIN diodes, RSSI_EB for externally biased APDs
BW0 / BW1Digital inputBandwidth configuration pins - grounding selects higher bandwidth; internally pulled up to VCC
FILTER1 / FILTER2Analog outputRegulated photodiode cathode bias voltages (~VCC – 0.1 V); used only with internal PD biasing
GND (x10)SupplyMultiple ground pads - all internally connected; bonding all improves RF grounding and noise immunity

Key Features

FeatureDesign Value
Dual RSSI OutputsRSSI_IB and RSSI_EB provide independent, current-mode signal strength monitoring for PIN and APD configurations respectively, enabling adaptive link margin management
Configurable BandwidthBW0/BW1 digital inputs allow real-time bandwidth tuning (7–9 GHz) without external components, optimizing SNR vs. jitter trade-offs per system requirement
On-Chip Supply FilteringIntegrated bypass capacitors eliminate need for external VCC_IN/VCC_OUT filtering, reducing BOM count and PCB area in space-constrained TO-can modules
Separate TIA and Output SuppliesVCC_IN and VCC_OUT isolation prevents AGC/output-stage noise from degrading TIA input-referred noise performance
CML Outputs with 50-Ω TerminationOn-die 50-Ω back-termination simplifies interface to standard CML receivers, eliminating discrete termination resistors and associated layout parasitics

Applications

10-G Ethernet Optical ReceiversSONET OC-192/STM-64 Modules

Use Scenario: High-density SFP+ transceivers for enterprise and data center interconnects operating at 10.3125 Gbps over multimode or single-mode fiber.

IC Role / Device Role / Timing Role: Front-end limiting TIA converting photodiode current to clean CML data stream; provides RSSI for link diagnostics and automatic power control.

Use Value: –20-dBm sensitivity and 0.9-μARMS input noise enable reliable operation with low-cost PIN diodes while meeting IEEE 802.3ae requirements.

Use Scenario: Telecom line cards and add-drop multiplexers requiring long-haul optical reception at OC-192 line rate (9.953 Gbps).

IC Role / Device Role / Timing Role: Core TIA in SONET-compliant receiver subsystem; delivers deterministic jitter <24 psP-P and stable transimpedance across temperature for BER <10–12.

Use Value: 9-GHz bandwidth and –20-dBm sensitivity ensure compliance with GR-253-CORE optical interface specifications under worst-case aging and temperature conditions.

10-G EPON OLT/ONU ReceiversCPRI/OBSAI 10-G Baseband Units

Use Scenario: Passive optical network equipment supporting symmetric 10-Gbps upstream/downstream in next-generation PON deployments.

IC Role / Device Role / Timing Role: High-dynamic-range TIA handling variable optical power levels from multiple ONUs; RSSI_IB enables real-time received power monitoring for dynamic bandwidth allocation.

Use Value: 2.5-mAP-P input overload current and AGC circuitry maintain signal integrity across >20 dB optical power range without saturation or clipping.

Use Scenario: Wireless infrastructure remote radio heads (RRH) and baseband units interfacing with fiber fronthaul links at 10.1376 Gbps (CPRI Option 7).

IC Role / Device Role / Timing Role: Low-jitter TIA in fronthaul receiver chain; CML outputs directly drive FPGA or ASIC SerDes with minimal signal conditioning.

Use Value: Deterministic jitter ≤24 psP-P and 92-mW power budget support tight EVM and ACLR requirements in LTE-A and 5G NR systems.

Equivalent & Alternatives

The following parts are listed as comparable options for similar limiting transimpedance amplifier applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
MAX3748AETE+Lower bandwidth (7 GHz), no RSSI output, fixed 3.3-V supply only, 16-pin TQFN packageLimited to shorter-reach 10-G applications without link monitoring; lacks dual-bias RSSI flexibilityChoose when RSSI and APD support are unnecessary and surface-mount assembly is preferred over die-level integration
LMH6525MA/NOPBWider bandwidth (12 GHz), no integrated RSSI, no on-chip termination, requires external gain-setting resistorsHigher noise floor (1.8 μARMS) and no built-in AGC limit use in low-sensitivity, long-reach systemsChoose for ultra-high-bandwidth lab instrumentation where programmable gain and external bias control outweigh integration benefits

Compared with MAX3748AETE+ and LMH6525MA/NOPB, ONET8551TY uniquely combines 9-GHz bandwidth, dual-mode RSSI, on-chip 50-Ω termination, and die-level form factor optimized for TO-can optical modules-making it the only option qualified for telecom-grade OC-192 and CPRI 10-G fronthaul with full link diagnostics.

Availability

ONET8551TY is available at Aetrix Electronics and suitable for 10-G Ethernet optical transceivers, SONET OC-192 line cards, and CPRI/OBSAI fronthaul equipment requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for ONET8551TY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader delivering analog, embedded processing, and connectivity solutions for industrial, automotive, and communications markets.

The ONET8551TY belongs to TI's ONET family of high-speed optical receiver ICs, designed specifically for cost-sensitive, high-volume fiber-optic infrastructure applications demanding low power, small footprint, and robust performance across temperature and process variation.

FAQ

What is the primary function of the ONET8551TY in optical receiver designs?

The ONET8551TY serves as a limiting transimpedance amplifier that converts weak photodiode current signals into robust CML voltage outputs for high-speed serial data recovery. In ONET8551TY-based systems, it provides critical functions including 10-kΩ transimpedance gain, automatic gain control, received signal strength indication (RSSI), and bandwidth configuration-all within a single die optimized for TO-can packaging.

Does the ONET8551TY support both PIN and APD photodiodes?

Yes, the ONET8551TY supports both PIN and APD photodiodes through dedicated circuitry: RSSI_IB is calibrated for internally biased PIN diodes using the FILTER pins, while RSSI_EB provides RSSI functionality when the photodiode is externally biased (e.g., APD). The ONET8551TY datasheet confirms separate bias paths and distinct RSSI output characteristics for each mode.

How is bandwidth adjusted on the ONET8551TY?

Bandwidth on the ONET8551TY is adjusted using two digital input pins-BW0 and BW1-each internally pulled up to VCC. Grounding either or both pins increases small-signal bandwidth up to 9 GHz; leaving both open reduces bandwidth. This configuration is validated in the ONET8551TY datasheet's AC electrical characteristics table and application diagrams.

What package type is the ONET8551TY supplied in?

The ONET8551TY is supplied as a bare die (DIESALE package) measuring 870 μm × 1036 μm, intended for hybrid assembly into TO-46 or similar metal-can optical modules. Its back-side metal requires conductive epoxy attachment to ground, and it contains 20 bond pads with defined coordinates and pad dimensions per the ONET8551TY die layout documentation.

Can the ONET8551TY operate from a single supply voltage?

Yes, the ONET8551TY operates from a single +3.3-V nominal supply, with recommended operating range of 2.8 V to 3.63 V. It uses internal regulation to derive separate VCC_IN (for TIA) and VCC_OUT (for AGC and CML output) rails, enabling optimal noise isolation while maintaining single-supply simplicity-confirmed in the ONET8551TY datasheet's Recommended Operating Conditions table.

ONET8551TY Specifications

Product attributes
Attribute value
Manufacturer:
Texas Instruments
Series:
-
Package/Case:
Die
Packaging:
Tray
Product Status:
Active
Amplifier Type:
Transimpedance
Number of Circuits:
1
Output Type:
-
Slew Rate:
-
Gain Bandwidth Product:
-
-3db Bandwidth:
9 GHz
Current - Input Bias:
-
Voltage - Input Offset:
-
Current - Supply:
28mA
Current - Output / Channel:
-
Voltage - Supply Span (Min):
2.8 V
Voltage - Supply Span (Max):
3.63 V
Operating Temperature:
-40°C ~ 100°C
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
Diesale

ONET8551TY FAQ

1.How can I place an order for ONET8551TY through Aetrix?

Please submit a Request for Quotation (RFQ) for ONET8551TY on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for ONET8551TY reliable?

The price and inventory of ONET8551TY are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ONET8551TY is usually 5 days.

3.What payment methods are accepted for ONET8551TY?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ONET8551TY transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for ONET8551TY?

ONET8551TY orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your ONET8551TY order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for ONET8551TY?

For technical support, including ONET8551TY datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ONET8551TY requirements.

6.How does Aetrix verify that ONET8551TY is sourced from the original manufacturer or authorized distributors?

All ONET8551TY products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ONET8551TY meets industry standards.

7.What is the process for return or replacement of ONET8551TY?

All ONET8551TY units undergo pre-shipment inspection (PSI). If there is an issue with ONET8551TY, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The ONET8551TY part is unused and in its original packaging.

Return procedure for ONET8551TY:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

ONET8551TY Tags

  • ONET8551TY
  • ONET8551TY PDF
  • ONET8551TY Datasheet
  • ONET8551TY Specifications
  • ONET8551TY Images
  • Texas Instruments
  • Texas Instruments ONET8551TY
  • Buy ONET8551TY
  • ONET8551TY Price
  • ONET8551TY Distributor
  • ONET8551TY Supplier
  • ONET8551TY Wholesale
Related Products
LM358DT
LM358DT

STMicroelectronics

LM358DR
LM358DR

Texas Instruments

LM2904DR
LM2904DR

Texas Instruments

LM358ADR
LM358ADR

Texas Instruments

LM2904DGKR
LM2904DGKR

Texas Instruments

LM324DR
LM324DR

Texas Instruments

MCP6006T-E/OT
MCP6006T-E/OT

Microchip Technology

MCP6006UT-E/OT
MCP6006UT-E/OT

Microchip Technology

LM324PWR
LM324PWR

Texas Instruments

LM2902PWR
LM2902PWR

Texas Instruments

LM2902DR
LM2902DR

Texas Instruments

LM358P
LM358P

Texas Instruments

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER