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Texas Instruments ONET8551TYS4
- Part No.:
- ONET8551TYS4
- Manufacturer:
- Texas Instruments
- Category:
- Instrumentation, Op Amps, Buffer Amps
- Package:
- Die
- Datasheet:
-
ONET8551TYS4.pdf
- Description:
- IC TRANSIMPEDANCE 1 CIRC WAFER
- Quantity:
- Payment:
- Shipping:
Inventory:3,193
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Product details
Overview
ONET8551TYS4 from Texas Instruments is a 11.3-Gbps limiting transimpedance amplifier (TIA) die optimized for optical receiver front-ends in 10-G Ethernet, SONET OC-192, and 10-G EPON systems. It delivers 9-GHz bandwidth, –20-dBm sensitivity at 10.3125 Gbps, 10-kΩ small-signal transimpedance, and integrated RSSI with dual bias modes (internal/external). Its CML outputs feature on-chip 50-Ω back-termination to VCC.
For engineers reviewing the ONET8551TYS4 datasheet, ONET8551TYS4 pinout, ONET8551TYS4 application, or ONET8551TYS4 equivalent, key selection criteria include input-referred noise (0.9–1.4 μARMS), differential output swing (180–420 mVP-P), bandwidth adjustability via BW0/BW1 pins, and die-level integration for TO-can packaging with conductive epoxy mounting.
Technical Context
The ONET8551TYS4 implements a three-stage signal path: a photodiode-current-to-voltage transimpedance amplifier (TIA), a limiting voltage amplifier with automatic gain control (AGC), and a CML output buffer with on-chip 50-Ω termination. AGC dynamically adjusts gain to maintain limiting behavior across input currents from 25 μAP-P to 2.5 mAP-P.
It integrates dual RSSI outputs-RSSI_IB for internally biased PIN receivers and RSSI_EB for externally biased APD/PIN configurations-with current-mode outputs requiring external resistive loads. Bandwidth is digitally configurable via two digital inputs (BW0, BW1), enabling optimization between 7–9 GHz and lower-noise operation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Small-signal bandwidth | 7–9 GHz - Determines maximum data rate support (up to 11.3 Gbps) and eye-opening integrity in high-speed fiber links. |
| Transimpedance gain | 10 kΩ typical - Sets conversion ratio from photodiode current to voltage; enables high sensitivity with low input current. |
| Sensitivity | –20 dBm @ 10.3125 Gbps - Minimum optical input power required for BER ≤10–12; critical for long-reach 10G-FPON/EPON links. |
| Input-referred noise | 0.9–1.4 μARMS - Directly limits minimum detectable signal; lower values improve dynamic range and link budget margin. |
| Power dissipation | 92 mW typical - Enables thermal management in compact TO-can modules without active cooling. |
| Supply voltage | +3.3 V (2.8–3.63 V) - Single-rail operation simplifies power delivery; separate VCC_IN/VCC_OUT rails isolate TIA and output stages. |
| Differential output swing | 180–420 mVP-P - Matches standard CML receiver input thresholds; supports direct interface to TI's ONET series limiters or retimers. |
Pinout & Package
The ONET8551TYS4 is supplied as a bare die (WAFERSALE/YS format) with dimensions 870 μm × 1036 μm and 20 bond pads arranged in a custom layout optimized for TO-can assembly. Back-side metallization requires conductive epoxy attachment to ground.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| IN | Analog input | Photodiode anode connection point; high-impedance node sensitive to parasitic capacitance and inductance. |
| OUT+, OUT– | CML data outputs | Differential data outputs with internal 50-Ω pull-up to VCC; require AC coupling (e.g., 0.1-μF caps) to downstream logic. |
| RSSI_IB, RSSI_EB | RSSI current outputs | Current-mode RSSI signals-RSSI_IB for internal PD bias, RSSI_EB for external bias; each requires external resistor to GND for voltage conversion. |
| VCC_IN, VCC_OUT | Supply rails | Separate 3.3-V supplies: VCC_IN powers TIA stage, VCC_OUT powers AGC/output buffer-enables noise isolation and independent regulation. |
| FILTER1, FILTER2 | PD bias outputs | Regulated, filtered DC bias voltages (≈VCC – 100 mV) for PIN photodiode cathode; used only with internal bias configuration. |
| BW0, BW1 | Digital bandwidth controls | Grounding either or both selects higher bandwidth (7–9 GHz); open = reduced bandwidth/noise for lower-speed applications. |
| GND (pads 1,3,6,10,14,16,18,19 + back-side) | Supply ground | All GND pads are internally connected; back-side metal must be bonded to system ground via conductive epoxy for thermal and RF performance. |
| NC (pad 11) | No connect | Unbonded pad; must remain unconnected to avoid parasitic coupling or latch-up risk. |
Key Features
| Feature | Design Value |
|---|---|
| Integrated RSSI with dual bias modes | Enables real-time optical power monitoring for both PIN (RSSI_IB) and APD (RSSI_EB) receivers without external circuitry-critical for closed-loop bias control and link health diagnostics. |
| On-chip supply filtering | Eliminates need for external VCC bypass capacitors on VCC_IN/VCC_OUT rails-reduces component count and PCB area in space-constrained TO modules. |
| Configurable bandwidth via BW0/BW1 | Allows trade-off between speed (9 GHz) and noise (lower bandwidth reduces input-referred noise)-supports design reuse across 6G/10G CPRI, Fibre Channel, and EPON platforms. |
| CML outputs with on-chip 50-Ω termination | Provides impedance-matched, low-jitter differential signaling directly compatible with TI's ONET8501/ONET8511 limiters-simplifies inter-stage interface and eliminates external termination resistors. |
| Separate VCC_IN/VCC_OUT rails | Isolates noise-sensitive TIA input stage from noisy output buffer and AGC circuitry-improves SNR and deterministic jitter performance in high-density optical modules. |
Applications
| 10-Gigabit Ethernet Optical Receivers | SONET OC-192 Line Cards |
|---|---|
Use Scenario: High-density SFP+ transceivers for enterprise and data center edge switches operating at 10.3125 Gbps over single-mode fiber. IC Role / Device Role / Timing Role: Front-end limiting TIA converting photodiode current to clean CML data stream; provides RSSI for digital diagnostics (DDM/DOM). Use Value: –20-dBm sensitivity and 9-GHz bandwidth ensure compliance with IEEE 802.3ae 10GBASE-LR/ER specifications while enabling compact TO-can packaging. | Use Scenario: Telecom line interface cards supporting OC-192 (9.953 Gbps) in metro and core networks with stringent BER and jitter requirements. IC Role / Device Role / Timing Role: Optical receiver preamplifier with deterministic jitter <24 psP-P and PSNR >–15 dB-maintains signal integrity across cascaded amplification stages. Use Value: Low input-referred noise (0.9 μARMS) and stable transimpedance (±15% over temperature) preserve optical budget in long-haul amplified links. |
| 10-G EPON ONU Receivers | 6-G/10-G CPRI Baseband Units |
Use Scenario: Optical Network Unit (ONU) receivers in fiber-to-the-home (FTTH) deployments requiring burst-mode sensitivity and RSSI-based ranging. IC Role / Device Role / Timing Role: Burst-mode TIA with fast AGC settling and RSSI_IB output for upstream power level calibration during discovery phase. Use Value: 2.5-mAP-P overload tolerance and –20-dBm sensitivity enable robust operation under variable split-ratio and fiber-loss conditions. | Use Scenario: Remote radio head (RRH) interfaces in LTE/5G infrastructure using CPRI v6.0 at 6.144/9.8304 Gbps over single-mode fiber. IC Role / Device Role / Timing Role: Low-jitter, low-noise TIA supporting deterministic latency and EVM-critical analog front-end performance. Use Value: Configurable bandwidth (via BW0/BW1) allows optimization for CPRI's 6.144 Gbps (lower noise) or 9.8304 Gbps (full 9-GHz BW) without redesign. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar limiting transimpedance amplifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ONET8501TYS4 | Lower bandwidth (6.5 GHz), no RSSI, 6.5-Gbps max data rate, 5.5-kΩ transimpedance | Targeted at cost-sensitive 6-G CPRI and Gigabit Ethernet; lacks RSSI for diagnostics | Select when 10-G performance is unnecessary and BOM cost reduction is prioritized over monitoring capability. |
| MAX3748AETE+ | 8.5-GHz bandwidth, 10-kΩ transimpedance, integrated limiting amplifier, but no RSSI or bandwidth control pins | Designed for 10G Fibre Channel and 10GBASE-SR; uses external VREF for threshold setting instead of RSSI | Choose when CML output compatibility and proven qualification in Fibre Channel are required, and RSSI is not needed. |
Compared with ONET8551TYS4, ONET8501TYS4 offers lower power and cost for sub-10G applications but sacrifices RSSI and bandwidth flexibility; MAX3748AETE+ provides mature 10G FC qualification and simpler biasing but lacks on-die RSSI and digital bandwidth tuning-making ONET8551TYS4 optimal for next-gen EPON/CPRI systems requiring diagnostics and configurability.
Availability
ONET8551TYS4 is available at Aetrix Electronics and suitable for 10-Gigabit Ethernet optical modules, SONET OC-192 line cards, and 10-G EPON ONUs requiring stable component supply, wafer-level traceability, and long-term lifecycle support.
Supply support for ONET8551TYS4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Texas Instruments is a global semiconductor leader specializing in analog, embedded processing, and high-speed communications ICs, with decades of optical networking expertise.
The ONET8551TYS4 belongs to TI's ONET family of high-speed optical receiver ICs, engineered specifically for 10G-class fiber-optic infrastructure where sensitivity, jitter, and integration density are critical.
FAQ
What is the primary function of the ONET8551TYS4 in an optical receiver?
The ONET8551TYS4 serves as a limiting transimpedance amplifier that converts photodiode current into a clean, differential CML data signal while providing received signal strength indication (RSSI). Its 9-GHz bandwidth and –20-dBm sensitivity make it ideal for 10.3125-Gbps applications like 10GBASE-LR and OC-192. The ONET8551TYS4 integrates AGC, on-chip supply filtering, and dual RSSI outputs to simplify optical module design.
How does the ONET8551TYS4 support both PIN and APD photodiodes?
The ONET8551TYS4 supports PIN diodes via internal biasing using FILTER1/FILTER2 outputs and RSSI_IB, and APDs via external biasing with RSSI_EB. When using internal bias, the device regulates photodiode voltage and derives RSSI from the TIA stage; with external bias, RSSI_EB mirrors input amplitude but requires external circuitry for highest accuracy. The ONET8551TYS4's dual-path RSSI architecture ensures flexibility across receiver topologies.
What are the critical layout considerations for the ONET8551TYS4 die?
Key layout practices for the ONET8551TYS4 include minimizing IN-pad capacitance by placing the photodiode close to the die, using short bond wires for VCC_IN/VCC_OUT/GND, employing symmetrical AC-coupled transmission lines for OUT+/OUT–, and attaching the back-side metal to ground with conductive epoxy. The ONET8551TYS4's performance is highly sensitive to parasitic inductance (<0.5 nH) and photodiode capacitance (<0.2 pF), per TI's recommended operating conditions.
Can the ONET8551TYS4 be used in burst-mode applications such as EPON ONUs?
Yes-the ONET8551TYS4 supports burst-mode operation through its fast AGC response and wide input dynamic range (25 μAP-P to 2.5 mAP-P). Its RSSI_IB output enables precise upstream power level measurement during ranging, and its –20-dBm sensitivity meets EPON's Class B+ requirements. The ONET8551TYS4's ability to maintain limiting behavior across rapid signal amplitude changes makes it suitable for time-division multiple access (TDMA) optical networks.
What is the significance of the BW0 and BW1 pins on the ONET8551TYS4?
The BW0 and BW1 pins are digital bandwidth control inputs: grounding either or both increases small-signal bandwidth up to 9 GHz, while leaving them open reduces bandwidth to minimize noise in lower-speed applications. This configurability allows one ONET8551TYS4 design to serve multiple standards-e.g., 6.144-Gbps CPRI (BW0 open) or 10.3125-Gbps EPON (BW0/BW1 grounded). The ONET8551TYS4's bandwidth adjustment is implemented without external components, enhancing design flexibility.
ONET8551TYS4 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Texas Instruments
- Series:
- -
- Package/Case:
- Die
- Packaging:
- Tube
- Product Status:
- Active
- Amplifier Type:
- Transimpedance
- Number of Circuits:
- 1
- Output Type:
- -
- Slew Rate:
- -
- Gain Bandwidth Product:
- -
- -3db Bandwidth:
- 9 GHz
- Current - Input Bias:
- -
- Voltage - Input Offset:
- -
- Current - Supply:
- 28mA
- Current - Output / Channel:
- -
- Voltage - Supply Span (Min):
- 2.8 V
- Voltage - Supply Span (Max):
- 3.63 V
- Operating Temperature:
- -40°C ~ 100°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- Wafer
ONET8551TYS4 FAQ
1.How can I place an order for ONET8551TYS4 through Aetrix?
Please submit a Request for Quotation (RFQ) for ONET8551TYS4 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for ONET8551TYS4 reliable?
The price and inventory of ONET8551TYS4 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ONET8551TYS4 is usually 5 days.
3.What payment methods are accepted for ONET8551TYS4?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ONET8551TYS4 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for ONET8551TYS4?
ONET8551TYS4 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your ONET8551TYS4 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for ONET8551TYS4?
For technical support, including ONET8551TYS4 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ONET8551TYS4 requirements.
6.How does Aetrix verify that ONET8551TYS4 is sourced from the original manufacturer or authorized distributors?
All ONET8551TYS4 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ONET8551TYS4 meets industry standards.
7.What is the process for return or replacement of ONET8551TYS4?
All ONET8551TYS4 units undergo pre-shipment inspection (PSI). If there is an issue with ONET8551TYS4, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The ONET8551TYS4 part is unused and in its original packaging.
Return procedure for ONET8551TYS4:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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