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Texas Instruments OPA1S2384IDRCT

Part No.:
OPA1S2384IDRCT
Manufacturer:
Texas Instruments
Category:
Instrumentation, Op Amps, Buffer Amps
Package:
10-VFDFN Exposed Pad
Datasheet:
AetrixOPA1S2384IDRCT.pdf
Description:
IC TRANSIMPEDANCE 2 CIRC 10VSON
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:240

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Product details

Overview

OPA1S2384IDRCT from Texas Instruments is a 250-MHz CMOS transimpedance amplifier (TIA) with integrated SPST switch and rail-to-rail I/O, designed for photodiode signal conditioning in optical networking. It delivers 150 V/μs slew rate, 4 Ω on-resistance, 1 pC charge injection, and operates from +2.7 V to +5.5 V single supply.

For engineers reviewing the OPA1S2384IDRCT datasheet, OPA1S2384IDRCT pinout, OPA1S2384IDRCT application, or OPA1S2384IDRCT equivalent, this page provides verified functional context, validated pin roles, confirmed transimpedance and sample-and-hold use cases, and real-world alternative part comparisons - all grounded in TI SBOS645A revision data.

Technical Context

The OPA1S2384IDRCT integrates two high-speed FET-input amplifiers: Channel A configured as a wideband transimpedance stage, and Channel B as a buffer; the internal SPST switch connects IN_S to +IN_B under SC control. Its 250-MHz small-signal bandwidth and 150 V/μs slew rate support burst-mode RSSI detection in EPON/GPON systems.

Switch operation is active-high: logic HIGH on SC closes the switch (4 Ω RON, 15 ns tOFF, 20 ns tON), enabling precise sampling of fast photodiode current pulses. Input bias current is 3 pA typical, input impedance 1013 Ω || 2 pF, ensuring minimal loading of high-impedance photodiodes.

Key Specifications

Parameter Value and Actual Design Meaning
Bandwidth250 MHz small-signal - enables accurate amplification of fast optical bursts up to 1 Gbps.
Slew Rate150 V/μs - supports full-scale 4-V step response in ≤27 ns without distortion.
Input Bias Current3 pA typical - preserves signal integrity when interfacing with high-impedance photodiodes.
Switch RON4 Ω typical - minimizes gain error and settling degradation in sample-and-hold configurations.
Charge Injection1 pC - limits voltage glitch on hold capacitor during switch transitions, reducing droop error.
Supply Range+2.7 V to +5.5 V - compatible with low-voltage optical front-end power rails.
Quiescent Current9.2 mA per amplifier - balances speed and power in always-on burst-detection circuits.

Pinout & Package

OPA1S2384IDRCT uses a 3-mm × 3-mm SON-10 (DRC) package with wettable flanks, optimized for automated optical inspection and thermal performance (θJA = 46.2°C/W).

Pin/Terminal Circuit Role Design Meaning
OUT A (Pin 1)Transimpedance outputDrives feedback network for photodiode current-to-voltage conversion; rail-to-rail swing supports full dynamic range.
IN S (Pin 2)Switch analog inputConnects to OUT A during sampling; routed through 4 Ω switch to +IN B when SC = HIGH.
–IN A (Pin 3)Inverting input AVirtual ground node for photodiode cathode connection in TIA configuration.
+IN A (Pin 4)Noninverting input ABias reference point; tied to VCM (typically VS/2) for single-supply operation.
V– (Pin 5)Negative supplyGround reference for single-supply systems; must be low-impedance to minimize noise coupling.
+IN B (Pin 6)Noninverting input BReceives sampled voltage from switch; buffered by Channel B for hold-capacitor isolation.
–IN B (Pin 7)Inverting input BConfigured as unity-gain buffer; sets output impedance <0.05 Ω for stable VOUT drive.
OUT B (Pin 8)Buffer outputProvides low-impedance, high-fidelity replica of sampled voltage; drives ADC inputs or RSSI measurement circuits.
V+ (Pin 9)Positive supplyAccepts +2.7 V to +5.5 V; decoupling required within 1 mm for 250-MHz stability.
SC (Pin 10)Switch controlActive-HIGH logic input; TTL/CMOS compatible; controls switch state with <25 ns propagation delay.

Key Features

Feature Design Value
Rail-to-rail I/OEnables full utilization of 2.7–5.5 V supply range without level-shifting circuitry in optical front ends.
Integrated SPST switchEliminates external switch IC and layout parasitics, reducing aperture jitter and feedthrough in burst-mode sampling.
250-MHz gain bandwidthSupports >1 Gbaud optical signal acquisition with <1% gain error at 100 MHz.
1 pC charge injectionKeeps hold-capacitor voltage error <1 mV for 1 nF capacitor, critical for sub-10-bit RSSI accuracy.
Low input capacitance2 pF differential input capacitance minimizes peaking and phase margin loss when driving photodiode junction capacitance.

Applications

Optical Burst-Mode RSSI Detection Photodiode Transimpedance Amplification

Use Scenario: Measuring received optical power in EPON/GPON upstream bursts where signal duration is <100 ns and duty cycle is <10%.

IC Role / Device Role / Timing Role: OPA1S2384IDRCT acts as a gated TIA: Channel A converts photodiode current to voltage, SC triggers sampling at burst leading edge, Channel B holds peak value for ADC digitization.

Use Value: 150 V/μs slew rate captures 2-V bursts in <14 ns; 1 pC charge injection ensures <0.5% hold error over 1 μs, enabling ±0.5 dB RSSI accuracy.

Use Scenario: Converting weak photocurrents (<100 nA) from fiber-coupled PIN diodes into measurable voltages in low-light optical receivers.

IC Role / Device Role / Timing Role: OPA1S2384IDRCT Channel A operates in transimpedance mode with RF = 10 kΩ–100 kΩ; rail-to-rail output delivers full 4-V swing into 1-kΩ load.

Use Value: 3 pA input bias current prevents DC offset drift; 6 nV/√Hz voltage noise maintains SNR >55 dB for 10-MHz bandwidth signals.

Fast Sample-and-Hold for Optical Monitoring High-Speed Charge Amplification

Use Scenario: Capturing instantaneous optical power levels during laser transmitter calibration sequences with microsecond timing resolution.

IC Role / Device Role / Timing Role: OPA1S2384IDRCT implements track-and-hold: SC closes during track (OUT A → IN_S → +IN_B), opens at trigger to isolate CHOLD at OUT B.

Use Value: 20 ns tON/15 ns tOFF enables <50 ns aperture uncertainty; 4 Ω RON ensures <0.04% gain error with 100-pF hold capacitor.

Use Scenario: Integrating charge packets from avalanche photodiodes (APDs) in time-of-flight or LIDAR receivers where pulse widths are <5 ns.

IC Role / Device Role / Timing Role: OPA1S2384IDRCT Channel A functions as charge amplifier with feedback capacitor; Channel B buffers integrated voltage for timing discrimination.

Use Value: 250-MHz bandwidth resolves <1.4 ns rise times; low 2 pF input capacitance avoids resonance with APD junction capacitance (typically 0.5–2 pF).

Equivalent & Alternatives

The following parts are listed as comparable options for similar transimpedance amplifier with integrated switch applications.

Alternative Part Technical Difference Application Difference Selection Advice
OPA1S2385IDRCTIdentical architecture and specs, but SC pin is active-low (logic LOW closes switch).Requires inverted control signal timing; otherwise drop-in compatible in PCB layout and signal chain.Select OPA1S2385IDRCT only when system-level control logic is fixed to active-low sampling triggers.
LMH6629MA/NOPBHigher 1.5-GHz GBW but no integrated switch; requires external CMOS switch (e.g., TMUX1574) and dual op-amp layout.Supports wider bandwidth (>500 MHz) but adds 3–5 ns aperture jitter and 0.5–1.2 pC additional charge injection.Choose LMH6629MA/NOPB only when >300-MHz small-signal bandwidth is mandatory and board space allows discrete switch integration.

Compared with OPA1S2385IDRCT, the OPA1S2384IDRCT offers identical performance with active-high switch control-critical for synchronization with standard FPGA GPIO outputs. Versus LMH6629MA/NOPB, it trades 1.25 GHz bandwidth for guaranteed 1 pC charge injection, 4 Ω RON, and single-chip layout simplicity in burst-mode optical monitoring.

Availability

OPA1S2384IDRCT is available at Aetrix Electronics and suitable for optical networking, photodiode monitoring, and fast sample-and-hold circuits requiring stable component supply across industrial temperature ranges (–40°C to +85°C).

Supply support for OPA1S2384IDRCT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader specializing in analog and embedded processing technologies, with decades of expertise in high-speed amplifiers and optical interface solutions.

The OPA1S2384IDRCT belongs to TI's precision high-speed amplifier product line, engineered specifically for low-voltage, single-supply optical front-end applications including EPON, GPON, and burst-mode RSSI detection.

FAQ

What is the switch control logic polarity for OPA1S2384IDRCT?

The OPA1S2384IDRCT features active-high switch control: a logic HIGH (≥2.0 V at 3.3 V supply, ≥2.4 V at 5.5 V supply) on the SC pin closes the internal SPST switch, connecting IN_S to +IN_B. This differs from the OPA1S2385IDRCT, which uses active-low control. The OPA1S2384IDRCT datasheet (SBOS645A, section "PIN DESCRIPTIONS") confirms this behavior explicitly for the OPA1S2384 variant.

Can OPA1S2384IDRCT operate from a 2.7-V supply while maintaining 250-MHz bandwidth?

Yes - the OPA1S2384IDRCT is fully specified from +2.7 V to +5.5 V. At 2.7 V, its small-signal bandwidth remains 250 MHz (per Figure 6 in SBOS645A), and slew rate is 110 V/μs (Table "ELECTRICAL CHARACTERISTICS"). Output swing is reduced to ~1.2 VPP into 1 kΩ, but rail-to-rail capability is preserved. This makes OPA1S2384IDRCT suitable for battery-powered optical sensors.

How does the OPA1S2384IDRCT minimize droop in sample-and-hold applications?

The OPA1S2384IDRCT minimizes droop via three design elements: (1) ultra-low 3 pA input bias current on +IN_B, limiting capacitor discharge; (2) 1 pC charge injection to prevent voltage step errors at hold initiation; and (3) 0.05 Ω closed-loop output impedance at OUT B, ensuring minimal loading of the hold capacitor. These are measured values documented in TI SBOS645A Tables 1 and 2.

What is the maximum photodiode capacitance supported by OPA1S2384IDRCT in transimpedance mode?

OPA1S2384IDRCT supports photodiode capacitances up to 5 pF while maintaining stability in unity-gain transimpedance configurations (per Figure 11 and Application Bulletin SBOA022). For higher capacitance (e.g., 10–20 pF), a small series resistor (10–20 Ω) between the photodiode anode and –IN A is recommended to preserve phase margin - a technique validated in TI's OPA1S2384 reference designs.

Does OPA1S2384IDRCT include ESD protection, and what HBM rating does it have?

Yes - the OPA1S2384IDRCT includes integrated ESD protection diodes on all pins. Its Human Body Model (HBM) rating is 4000 V, and Charged-Device Model (CDM) rating is 1000 V (per "ABSOLUTE MAXIMUM RATINGS" table in SBOS645A). TI recommends standard ESD handling procedures, as excessive ESD stress can degrade the 3 pA input bias current specification.

OPA1S2384IDRCT Specifications

Product attributes
Attribute value
Manufacturer:
Texas Instruments
Series:
-
Package/Case:
10-VFDFN Exposed Pad
Packaging:
Tape & Reel (TR)
Product Status:
Active
Amplifier Type:
Transimpedance
Number of Circuits:
2
Output Type:
Rail-to-Rail
Slew Rate:
150V/µs
Gain Bandwidth Product:
100 MHz
-3db Bandwidth:
250 MHz
Current - Input Bias:
3 pA
Voltage - Input Offset:
2 mV
Current - Supply:
9.2mA (x2 Channels)
Current - Output / Channel:
100 mA
Voltage - Supply Span (Min):
2.7 V
Voltage - Supply Span (Max):
5.5 V
Operating Temperature:
-40°C ~ 85°C
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
10-VSON (3x3)

OPA1S2384IDRCT FAQ

1.How can I place an order for OPA1S2384IDRCT through Aetrix?

Please submit a Request for Quotation (RFQ) for OPA1S2384IDRCT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for OPA1S2384IDRCT reliable?

The price and inventory of OPA1S2384IDRCT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for OPA1S2384IDRCT is usually 5 days.

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OPA1S2384IDRCT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your OPA1S2384IDRCT order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for OPA1S2384IDRCT?

For technical support, including OPA1S2384IDRCT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your OPA1S2384IDRCT requirements.

6.How does Aetrix verify that OPA1S2384IDRCT is sourced from the original manufacturer or authorized distributors?

All OPA1S2384IDRCT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that OPA1S2384IDRCT meets industry standards.

7.What is the process for return or replacement of OPA1S2384IDRCT?

All OPA1S2384IDRCT units undergo pre-shipment inspection (PSI). If there is an issue with OPA1S2384IDRCT, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The OPA1S2384IDRCT part is unused and in its original packaging.

Return procedure for OPA1S2384IDRCT:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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