Texas Instruments OPA2211MDRGTEP

Overview

OPA2211MDRGTEP from Texas Instruments is a dual-channel, rail-to-rail output, unity-gain stable precision operational amplifier optimized for ultra-low-noise signal conditioning. It delivers 1.1 nV/√Hz voltage noise density at 1 kHz, 700 ns 16-bit settling time across 10-V output swing, and 3.6 mA/ch quiescent current - making it ideal for high-resolution ADC driver and PLL loop filter applications in defense-grade systems.

For engineers reviewing the OPA2211MDRGTEP datasheet, OPA2211MDRGTEP pinout, OPA2211MDRGTEP application, or OPA2211MDRGTEP equivalent, key selection criteria include verified 1.1-nV/√Hz noise performance at 1 kHz, ±2.25 V to ±18 V dual-supply operation, 80 MHz gain-bandwidth product at G = 100, and DFN-8 (3 mm × 3 mm) package with exposed thermal pad tied to V–.

Technical Context

The OPA2211MDRGTEP employs a SiGe bipolar process with 180 transistors, enabling simultaneous low voltage noise (1.1 nV/√Hz) and low current noise (1.7 pA/√Hz at 1 kHz). Its rail-to-rail output stage supports full dynamic range utilization across ±2.25 V to ±18 V supplies, while unity-gain stability ensures robustness in low-gain configurations without external compensation.

Designed for extended temperature operation (–55°C to +125°C), the device integrates ESD protection (±3 kV HBM, ±1 kV CDM) and features input overvoltage protection via back-to-back diodes. The exposed thermal pad on the WSON-8 package must be connected to V– to meet specified thermal resistance (R_θJC(bot) = 4.2 °C/W) and ensure reliable operation under sustained load.

Key Specifications

Pinout & Package

The OPA2211MDRGTEP is housed in an 8-pin WSON (DRG) package measuring 3.00 mm × 3.00 mm with an exposed thermal die pad on the underside, which must be soldered to V– for thermal and electrical performance compliance.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar precision op-amp applications.

Compared with OPA2211MDRGTEP, the OPA211MDRGTEP offers identical per-channel performance in a single-channel format - useful for modular designs - while the OPA227MDR trades voltage noise for superior current noise performance, making it preferable for high-Z sensor nodes rather than low-Z ADC drivers or PLL filters.

Availability

OPA2211MDRGTEP is available at Aetrix Electronics and suitable for defense electronics, aerospace avionics, and medical imaging systems requiring stable component supply across extended temperature and long lifecycle programs.

Supply support for OPA2211MDRGTEP includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader specializing in analog and embedded processing technologies, with decades of heritage in precision amplifiers and space-grade components.

The OPA2211MDRGTEP belongs to TI's EP (Enhanced Product) series, engineered specifically for high-reliability defense, aerospace, and medical applications demanding extended temperature operation, controlled manufacturing baselines, and full traceability.

FAQ

What is the maximum supply voltage rating for the OPA2211MDRGTEP?

The OPA2211MDRGTEP has an absolute maximum supply voltage (V+ – V–) of 40 V, with recommended operation from ±2.25 V to ±18 V (or +4.5 V to +36 V single supply). Exceeding 40 V risks permanent damage, and operation below ±2.25 V may degrade noise and bandwidth performance. The OPA2211MDRGTEP is fully characterized across its entire –55°C to +125°C junction temperature range at these supply levels.

Does the OPA2211MDRGTEP require external compensation for unity-gain stability?

No, the OPA2211MDRGTEP is internally compensated for unity-gain stability and operates reliably with no external components in G = 1 configurations. This eliminates risk of oscillation in buffer and active filter applications. The device maintains phase margin >60° at G = 1 and exhibits no peaking in step response - confirmed by TI's SBOS761 characterization data across temperature and supply conditions.

How is the exposed thermal pad on the OPA2211MDRGTEP package intended to be connected?

The exposed thermal die pad on the OPA2211MDRGTEP's WSON-8 package must be soldered to the V– (negative supply) net on the PCB. This connection achieves the specified R_θJC(bot) = 4.2 °C/W and ensures proper heat dissipation and electrical reference. Leaving the pad floating or connecting it to ground violates the thermal design and may cause parametric shift or reliability failure under sustained load.

What is the guaranteed 16-bit settling time specification for the OPA2211MDRGTEP?

The OPA2211MDRGTEP guarantees 700 ns settling time to 0.0015% (16-bit accuracy) for a 10-V output swing under standard test conditions (VS = ±15 V, G = –1, CL = 100 pF). This value is measured across the full –55°C to +125°C operating range and is not derated for temperature or supply variation. It reflects true small-signal behavior critical for high-speed precision data acquisition.

Can the OPA2211MDRGTEP drive capacitive loads without instability?

The OPA2211MDRGTEP can drive up to 100 pF capacitive load in G = +1 configuration without external compensation, as verified in Figure 27 of SBOS761. For loads >100 pF, a series resistor (typically 10–50 Ω) between amplifier output and capacitance restores phase margin. The OPA2211MDRGTEP's robust output stage maintains 30 mA drive capability even with such isolation resistors, preserving signal integrity in cable-driven applications.