Texas Instruments OPA2313IDR

Overview

OPA2313IDR from Texas Instruments is a dual-channel, rail-to-rail input/output, micro-power CMOS operational amplifier optimized for battery-powered precision signal conditioning. It delivers 1-MHz gain-bandwidth, 50 µA/ch quiescent current, 25 nV/√Hz input voltage noise at 1 kHz, 0.5 mV max input offset voltage, and operates from 1.8 V to 5.5 V - enabling use in portable medical sensors and low-voltage ADC driver stages.

For engineers reviewing the OPA2313IDR datasheet, OPA2313IDR pinout, OPA2313IDR application, or OPA2313IDR equivalent, key selection criteria include ultra-low IQ for multi-year battery life, rail-to-rail operation at 1.8 V supply, low input bias current (0.2 pA typ) for high-impedance sensor interfaces, and integrated RF/EMI filtering for robustness in noisy wireless environments.

Technical Context

The OPA2313IDR employs a complementary differential input stage (N- and P-channel pairs) enabling true rail-to-rail common-mode input range - extending 200 mV beyond both supply rails - with no phase reversal during overdrive. Its class AB output stage drives ≥10-kΩ loads while maintaining rail-to-rail swing across the full temperature range (–40°C to +125°C).

Designed for unity-gain stability with capacitive loads up to 150 pF, it integrates an internal low-pass EMI filter (–3 dB at ~35 MHz) and features 4-kV HBM ESD protection. Input offset drift is tightly controlled at 2 µV/°C, supporting stable DC-coupled measurements in industrial sensor nodes.

Key Specifications

Pinout & Package

OPA2313IDR is packaged in an SO-8 (D) surface-mount package with exposed thermal pad on underside, rated for –40°C to +125°C operation. The thermal pad must be connected to V– for optimal thermal performance (θJA = 138.4°C/W).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-power precision op amp applications.

Compared with MCP6002T-I/SN and LMV358IDR, OPA2313IDR provides superior 1.8-V operability, 50% lower quiescent current, and built-in EMI rejection - making it the preferred choice for next-generation ultra-low-power, RF-dense IoT sensor nodes.

Availability

OPA2313IDR is available at Aetrix Electronics and suitable for portable medical devices, battery-powered data loggers, and wireless sensor nodes requiring stable component supply across extended temperature ranges and multi-year production cycles.

Supply support for OPA2313IDR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader delivering analog, embedded processing, and connectivity solutions with deep expertise in precision analog design and low-power system integration.

The OPA2313IDR belongs to TI's Precision Value Line series - engineered specifically for cost-sensitive, battery-constrained applications demanding rail-to-rail performance, micro-power operation, and robustness in real-world EMI environments.

FAQ

What is the maximum capacitive load the OPA2313IDR can drive while remaining stable?

The OPA2313IDR is unity-gain stable with capacitive loads up to 150 pF, as verified in the datasheet's Phase Margin vs Capacitive Load plot (Figure 21). This eliminates need for external compensation when driving typical PCB traces, ADC input capacitance (e.g., 10–30 pF), or small ceramic sensors. For loads >150 pF, a series isolation resistor (e.g., 10–50 Ω) between OPA2313IDR output and load is recommended to maintain phase margin >45°.

Does the OPA2313IDR support true rail-to-rail input at 1.8-V supply?

Yes, the OPA2313IDR supports rail-to-rail input operation down to 1.8 V, with common-mode range extending from (V–) – 0.2 V to (V+) + 0.2 V. At 1.8 V supply, this enables input signals from –0.2 V to +2.0 V - critical for interfacing with sensors whose output spans the full supply range, such as resistive bridge configurations referenced to V+ and V–.

How does the integrated EMI filter in the OPA2313IDR improve system-level robustness?

The OPA2313IDR incorporates an internal low-pass EMI filter (–3 dB at ~35 MHz) on both inputs, reducing rectified offset shifts caused by RF interference. Per Figure 33 in the datasheet, EMIRR IN+ exceeds 100 dB at 900 MHz and 80 dB at 2.4 GHz - enabling reliable operation in Bluetooth/Wi-Fi coexistence scenarios where unfiltered op amps exhibit >10 mV output offset shifts under RF exposure.

Can the OPA2313IDR be used in single-supply 1.8-V sensor interfaces without external level shifting?

Yes, the OPA2313IDR is fully specified at 1.8 V with rail-to-rail input and output swing. Its input common-mode range includes both supply rails, and output swings within 15 mV of V– and V+ (RL = 100 kΩ), allowing direct connection to 1.8-V ADCs and elimination of level-shifting circuitry - reducing BOM count and board area in space-constrained wearables.

What is the thermal pad connection requirement for the OPA2313IDR SO-8 package?

The exposed thermal pad on the underside of the OPA2313IDR SO-8 (D) package must be soldered to the V– (ground) net. Per TI's thermal metrics table, this connection reduces junction-to-ambient thermal resistance (θJA) from 138.4°C/W to ≤100°C/W in typical 2-layer PCB layouts, preventing thermal shutdown during sustained 15-mA output current operation at +125°C ambient.