Texas Instruments OPA313IDCKR

Overview

OPA313IDCKR from Texas Instruments is a single-channel, rail-to-rail input/output CMOS operational amplifier optimized for micro-power, low-noise, precision signal conditioning in battery-powered systems. It delivers 1-MHz gain-bandwidth, 50 µA quiescent current per channel, 25 nV/√Hz input voltage noise at 1 kHz, 0.5 mV typical offset voltage, and operates from 1.8 V to 5.5 V - enabling high-accuracy sensor interfacing in portable medical devices and loop-powered industrial transmitters.

For engineers reviewing the OPA313IDCKR datasheet, OPA313IDCKR pinout, OPA313IDCKR application, or OPA313IDCKR equivalent, key selection criteria include its rail-to-rail input stage with no phase reversal, internal RF/EMI filtering, unity-gain stability with up to 150 pF capacitive load, and extended –40°C to +125°C temperature operation - all critical for reliable performance in space-constrained, low-voltage analog front-ends.

Technical Context

The OPA313IDCKR employs a complementary differential input stage (N- and P-channel pairs) enabling true rail-to-rail common-mode input range extending 200 mV beyond both supply rails, with no phase reversal during overdrive. Its Class AB output stage drives ≥10-kΩ loads across the full supply range while maintaining low distortion (0.0045% THD+N).

Internal ESD protection (4-kV HBM), integrated low-pass EMI filter (–3 dB at ~35 MHz), and robust layout design ensure stable operation in noisy environments. The device achieves unity-gain stability without external compensation and supports fast overload recovery (3 µs) and precise DC accuracy (2 µV/°C drift).

Key Specifications

Pinout & Package

OPA313IDCKR is housed in a 5-pin SC70 package (DCK), measuring 2.0 mm × 1.25 mm × 0.9 mm, with exposed thermal pad connected to V– for enhanced thermal performance (θJA = 281.4°C/W).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar operational amplifier applications.

Compared with MCP6001T-I/OT and LMV321IDBVR, OPA313IDCKR provides superior DC precision (0.5 mV VOS vs ≥0.7 mV), lower power (50 µA vs ≥80 µA), and verified EMI resilience - making it the preferred choice for battery-operated, high-integrity analog signal paths where long-term stability and noise immunity are design-critical.

Availability

OPA313IDCKR is available at Aetrix Electronics and suitable for battery-powered instruments, sensor signal conditioning, and wireless sensor nodes requiring stable component supply across extended temperature ranges and multi-year production cycles.

Supply support for OPA313IDCKR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader delivering analog and embedded processing solutions, with deep expertise in precision op amps, data converters, and low-power signal chain ICs.

The OPA313IDCKR belongs to TI's Precision Value Line series - engineered specifically for cost-sensitive, battery-operated applications demanding rail-to-rail performance, ultra-low quiescent current, and robust operation from 1.8 V.

FAQ

What is the maximum capacitive load the OPA313IDCKR can drive while remaining unity-gain stable?

The OPA313IDCKR is unity-gain stable with capacitive loads up to 150 pF, as confirmed in the TI SBOS649C datasheet. This eliminates the need for external isolation resistors in ADC driver or active filter configurations where PCB trace and input capacitance approach this limit. Exceeding 150 pF may cause peaking or oscillation unless compensated per the manufacturer's recommended methods. OPA313IDCKR's internal architecture ensures stability without added external components under this condition.

Does the OPA313IDCKR support true rail-to-rail input, and what is the practical common-mode range?

Yes, the OPA313IDCKR supports true rail-to-rail input with a common-mode voltage range from (V–) – 0.2 V to (V+) + 0.2 V - verified across –40°C to +125°C. This allows direct interfacing with sensors whose output swings to the supply rails, such as resistive bridge outputs or DACs. Operation within the transition region (typically V+ – 1.3 V to V+ – 1.1 V) may slightly degrade CMRR and PSRR, but no phase reversal occurs. OPA313IDCKR's dual-input-stage design guarantees functional integrity across the full range.

What is the input bias current specification for OPA313IDCKR, and why does it matter in high-impedance circuits?

The OPA313IDCKR has a typical input bias current of 0.2 pA at +25°C, with a maximum of ±600 pA over –40°C to +125°C. This ultra-low value prevents significant voltage drop across high-impedance sources like pH electrodes (>100 MΩ), photodiodes, or precision RTD bridges. For example, with a 10-MΩ source, 0.2 pA induces only 2 µV error - far below typical offset voltages. This makes OPA313IDCKR ideal for precision front-ends where bias current-induced errors must be minimized. OPA313IDCKR's CMOS input stage enables this performance.

How does the internal EMI filter in OPA313IDCKR improve system-level reliability?

The OPA313IDCKR integrates an internal low-pass EMI filter with ~35-MHz –3 dB cutoff and 20 dB/decade roll-off, specifically designed to attenuate rectified RF interference that causes DC offset shifts. Tested per TI's EMIRR methodology (10 MHz–6 GHz), this filter reduces susceptibility to cellular, Wi-Fi, and BLE emissions - critical in wireless sensor nodes or portable medical devices. Unlike external RC filters, it adds no board area or thermal noise. OPA313IDCKR's EMI resilience is documented in Figure 33 of SBOS649C, confirming measurable immunity improvement versus unfiltered op amps.

Can OPA313IDCKR operate reliably from a 1.8-V single supply, and what key parameters change versus 5.5-V operation?

Yes, OPA313IDCKR is fully specified from 1.8 V to 5.5 V. At 1.8 V, gain-bandwidth reduces to 0.9 MHz (vs 1 MHz at 5.5 V), slew rate drops to 0.45 V/µs (vs 0.5 V/µs), and output swing into 2 kΩ is 25–50 mV from rails (vs 75–100 mV at 5.5 V). Quiescent current remains 50 µA, and rail-to-rail input/output functionality is preserved. These trade-offs are explicitly characterized in the +1.8 V Electrical Characteristics tables of SBOS649C. OPA313IDCKR maintains full functionality and guaranteed specs across the entire supply range.