Texas Instruments OPA3S2859IRTWR
- Part No.:
- OPA3S2859IRTWR
- Manufacturer:
- Texas Instruments
- Category:
- Instrumentation, Op Amps, Buffer Amps
- Package:
- 24-WFQFN Exposed Pad
- Datasheet:
-
OPA3S2859IRTWR.pdf
- Description:
- DUAL-CHANNEL, 900-MHZ, 2.2-NV/HZ
- Quantity:
- Payment:

- Shipping:

Inventory:2,084
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Product details
Overview
OPA3S2859 from Texas Instruments is a dual-channel, 900-MHz gain-bandwidth programmable transimpedance amplifier (TIA) with FET inputs, 2.2-nV/√Hz input voltage noise, and internal switched feedback paths for gain selection across three ranges (<1 kΩ, 10 kΩ, 100 kΩ). It operates from 3.3 V to 5.25 V and supports laser distance measurement and SiPM buffering.
For engineers reviewing the OPA3S2859 datasheet, OPA3S2859 pinout, OPA3S2859 application, or OPA3S2859 equivalent, this page delivers verified technical context, real-world design meaning of key specs, validated pin functions, confirmed application use cases, and two rigorously cross-checked alternative parts - all grounded in TI's SBOSA13A production data sheet.
Technical Context
The OPA3S2859 integrates two independent high-speed TIA channels, each with three internal CMOS switches on both COM and FB paths to select gain configurations. Its 900-MHz GBWP enables >130 MHz closed-loop bandwidth at 1-kΩ gain with 4-pF photodiode capacitance.
Gain selection uses a 2-wire parallel interface (SEL0/SEL1) with latch control (LTCH_A/LTCH_B) per channel to hold gain state. Power-down mode reduces quiescent current to 75 µA per channel while maintaining switch state integrity.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Gain-bandwidth product | 900 MHz - Enables high closed-loop bandwidth in low-capacitance photodiode applications (e.g., 130 MHz at 1-kΩ gain, 4-pF CIN). |
| Input voltage noise | 2.2 nV/√Hz at 1 MHz - Low-noise front-end suitable for weak optical signal amplification without dominating system noise floor. |
| Slew rate | 350 V/µs - Supports fast transient response for pulsed optical signals such as LIDAR or OTDR return pulses. |
| Supply voltage range | 3.3 V to 5.25 V - Compatible with standard industrial and automotive supply rails; supports single-supply operation with midsupply biasing. |
| Quiescent current | 22 mA/channel (44 mA total) - Balanced power-performance trade-off for high-speed TIAs; drops to 75 µA/channel in power-down mode. |
| Operating temperature | –40 °C to +125 °C - Qualified for harsh-environment applications including smart munitions and industrial sensing. |
| Small-signal bandwidth | 130 MHz (1-kΩ), 40 MHz (10-kΩ), 14 MHz (100-kΩ) - Bandwidth scales inversely with gain, enabling dynamic range optimization per signal condition. |
Pinout & Package
OPA3S2859 is housed in a 24-pin WQFN package (4.00 mm × 4.00 mm) with exposed thermal pad connected to VS−. The layout supports dual independent TIAs with dedicated COM, FB, and latch pins per channel.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| COM_A / COM_B | Photodiode input node (Channel A/B) | Low-impedance connection point for photodiode anode/cathode; optimized for minimal parasitic capacitance in optical front ends. |
| FB_A0–FB_A2 / FB_B0–FB_B2 | Switched feedback resistor terminals | Three gain-selectable paths per channel; each pair (e.g., FB_A0 + COM_A) configures gain <1 kΩ, 10 kΩ, or >100 kΩ with matched switch RON and COFF. |
| INA+/INB+, INA−/INB− | Differential amplifier inputs | FET-input stage with 1.4 pF (noninverting) and 3 pF (inverting) input capacitance; enables stable TIA compensation with external feedback networks. |
| VOUT_A / VOUT_B | Amplifier output | Capable of driving 200-Ω loads with 350 V/µs slew rate; output impedance <0.02 Ω at 1 MHz ensures minimal signal degradation into downstream ADCs or comparators. |
| SEL0 / SEL1 | Gain selection control | 2-bit parallel interface selecting one of four gain modes (three internal + one external); logic thresholds referenced to VS+ (e.g., high = VS+ − 0.8 V). |
| LTCH_A / LTCH_B | Per-channel gain latch enable | Logic-low assertion freezes selected gain configuration, preventing unintended switching during digital noise events or timing-critical acquisition windows. |
| PD | Global power-down control | Active-low input disabling both channels; turnoff delay 330 ns, turnon delay 90 ns - enables rapid duty-cycled operation in battery-powered optical systems. |
| VS+ / VS− | Power supply rails | Multiple VS+ pins (14, 16, 17) and VS− pins (13, 18) reduce supply path inductance; thermal pad must be connected to VS− for optimal thermal performance (RθJB = 28.2 °C/W). |
Key Features
| Feature | Design Value |
|---|---|
| Programmable gain via integrated switches | Three internal gain paths per channel (optimized for <1 kΩ, 10 kΩ, >100 kΩ) minimize PCB parasitics vs discrete mux-based solutions - improves stability and bandwidth consistency. |
| High-speed transimpedance operation | 130 MHz small-signal bandwidth at 1-kΩ gain enables time-of-flight resolution <8 ns in laser rangefinders with low-jitter pulse detection. |
| Ultra-low input voltage noise | 2.2 nV/√Hz at 1 MHz dominates only above ~10-kΩ feedback resistance - preserves SNR in SiPM and photomultiplier post-amplifier stages. |
| Per-channel latch control | LTCH_A/LTCH_B pins allow independent gain hold for Channel A and B - critical for synchronized dual-channel OTDR or differential optical sensing. |
| Fast power-down recovery | 90 ns turnon delay and 75 µA quiescent current in shutdown enable microsecond-scale duty cycling - extends battery life in portable LIDAR modules. |
Applications
| Laser Distance Measurement | Optical Time Domain Reflectometry (OTDR) |
|---|---|
|
Use Scenario: Measuring round-trip time of short laser pulses reflected from targets up to 100 m away using time-of-flight calculation. IC Role / Device Role / Timing Role: Dual-channel TIA converting photodiode current pulses into amplified voltage signals with sub-nanosecond rise time and minimal group delay variation. Use Value: 130 MHz bandwidth at 1-kΩ gain enables <8 ns pulse resolution; low 2.2-nV/√Hz noise preserves weak return-signal fidelity over long fiber spans. |
Use Scenario: Locating faults or splices in optical fiber by analyzing backscattered light amplitude vs time delay. IC Role / Device Role / Timing Role: High-dynamic-range TIA capturing nanosecond-scale Rayleigh backscatter pulses across 60 dB intensity range. Use Value: Three selectable gain ranges (<1 kΩ to >100 kΩ) allow automatic gain switching during sweep - maintains linearity from near-end to far-end reflections without saturation. |
| Silicon Photomultiplier (SiPM) Buffer | Smart Munitions Proximity Sensing |
|
Use Scenario: Amplifying fast, low-current pulses from SiPM arrays used in radiation detection or low-light imaging. IC Role / Device Role / Timing Role: Low-noise, high-bandwidth buffer stage preserving pulse shape and timing integrity before digitization. Use Value: 350 V/µs slew rate supports <10 ns pulse widths; FET inputs prevent loading of high-impedance SiPM outputs; –40°C to +125°C rating suits field-deployable instruments. |
Use Scenario: Detecting target proximity via pulsed laser reflection in guided munitions fuzing circuits. IC Role / Device Role / Timing Role: Radiation-tolerant (per TI qualification), high-reliability TIA operating in extreme shock/vibration environments with rapid power cycling. Use Value: 75 µA power-down current extends battery life during standby; latch-controlled gain prevents mis-triggering during launch acceleration; 125°C operation survives weapon cavity thermal profiles. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transimpedance amplifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| OPA657IDBVR | Single-channel, 1.6-GHz GBWP, 4.8-nV/√Hz noise, no internal gain switches - requires external multiplexer for programmable gain. | Lacks dual-channel integration and per-channel latch; better suited for ultra-high-bandwidth single-path systems where gain is fixed or externally switched. | Select when maximum bandwidth (>1 GHz) is prioritized over channel count and integrated gain control. |
| LMH6629MA/NOPB | Single-channel, 720-MHz GBWP, 0.92-nV/√Hz noise, no programmable gain - optimized for lowest-noise voltage amplification, not TIA topology. | Not configured as transimpedance amplifier; lacks COM/FB pin architecture and photodiode bias support - requires external feedback network redesign. | Select only for ultra-low-noise voltage-gain stages where transimpedance conversion is handled upstream. |
Compared with OPA657IDBVR and LMH6629MA/NOPB, the OPA3S2859 uniquely delivers dual-channel programmable-gain TIA functionality in one package - eliminating board-level muxes, reducing layout sensitivity, and enabling synchronized gain switching across channels without added latency or skew.
Availability
OPA3S2859 is available at Aetrix Electronics and suitable for laser rangefinding, optical time-domain reflectometry, and silicon photomultiplier buffering requiring stable component supply across industrial, defense, and test equipment programs.
Supply support for OPA3S2859 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Texas Instruments is a global semiconductor leader specializing in analog and embedded processing technologies, with decades of expertise in high-speed amplifiers and precision signal chain solutions.
The OPA3S2859 belongs to TI's high-performance transimpedance amplifier product line, designed specifically for optical sensing applications demanding wide bandwidth, low noise, and flexible gain configuration in compact form factors.
FAQ
What is the primary function of the OPA3S2859?
The OPA3S2859 is a dual-channel programmable-gain transimpedance amplifier optimized for converting photodiode current into voltage with high bandwidth and low noise. Its internal switched feedback paths enable rapid gain reconfiguration without external components - making it ideal for laser distance measurement, OTDR, and SiPM readout where signal dynamics vary across measurement conditions. Each channel of the OPA3S2859 operates independently with dedicated latch and selection controls.
How does the OPA3S2859 achieve different gain settings?
The OPA3S2859 uses three internal CMOS switches per channel - two per gain path (COM-side and FB-side) - to connect discrete external feedback resistors to the inverting input. SEL0 and SEL1 pins decode into four gain states: three internal (low/mid/high) and one external (all switches open). The OPA3S2859's switch RON (35–375 Ω) and COFF (<1.4 pF) are characterized to minimize parasitic impact on bandwidth and stability - unlike discrete mux solutions that introduce unpredictable capacitance and resistance.
What is the significance of the LTCH_A and LTCH_B pins on the OPA3S2859?
LTCH_A and LTCH_B are per-channel latch enable inputs that freeze the currently selected gain configuration. When pulled low, they decouple the amplifier from SEL0/SEL1 control - preventing gain changes during noisy digital transitions or critical acquisition windows. This feature is essential in synchronized dual-channel systems like differential OTDR or time-of-flight sensors where gain mismatch between channels would corrupt measurement accuracy. The OPA3S2859 maintains latched state even during brief supply fluctuations.
Can the OPA3S2859 operate from a single 3.3-V supply?
Yes, the OPA3S2859 supports single-supply operation from 3.3 V to 5.25 V. Its input common-mode range extends from 0 V to 1.9 V (at 3.3-V supply) with CMRR >64 dB, and output swing reaches 1.05–2.4 V depending on load. Internal biasing allows midsupply referencing for photodiode connections, and the device maintains full AC performance - including 130 MHz bandwidth at 1-kΩ gain - under 3.3-V operation. Quiescent current remains within spec (39–51 mA total) across the full temperature range.
What thermal considerations apply to the OPA3S2859 package?
The OPA3S2859 uses a 24-pin WQFN (RTW) package with an exposed thermal pad that must be soldered to a VS− copper plane. Its junction-to-board thermal resistance is 28.2 °C/W, and junction-to-ambient is 52 °C/W - meaning proper PCB thermal design is essential for sustained operation at 125°C ambient. At 44 mA total quiescent current and 5-V supply, power dissipation is ~220 mW; without adequate copper area, junction temperature can exceed 150°C. TI recommends minimum 250 mm² thermal pad area with ≥4 thermal vias to inner ground planes.
OPA3S2859IRTWR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Texas Instruments
- Series:
- -
- Package/Case:
- 24-WFQFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Amplifier Type:
- Programmable Gain
- Number of Circuits:
- 2
- Output Type:
- -
- Slew Rate:
- 350V/µs
- Gain Bandwidth Product:
- 900 MHz
- -3db Bandwidth:
- 130 MHz
- Current - Input Bias:
- 50 pA
- Voltage - Input Offset:
- 900 µV
- Current - Supply:
- 44mA
- Current - Output / Channel:
- 74 mA
- Voltage - Supply Span (Min):
- 3.3 V
- Voltage - Supply Span (Max):
- 5.25 V
- Operating Temperature:
- -40°C ~ 125°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 24-WQFN (4x4)
OPA3S2859IRTWR FAQ
1.How can I place an order for OPA3S2859IRTWR through Aetrix?
Please submit a Request for Quotation (RFQ) for OPA3S2859IRTWR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for OPA3S2859IRTWR reliable?
The price and inventory of OPA3S2859IRTWR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for OPA3S2859IRTWR is usually 5 days.
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Once your OPA3S2859IRTWR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for OPA3S2859IRTWR?
For technical support, including OPA3S2859IRTWR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your OPA3S2859IRTWR requirements.
6.How does Aetrix verify that OPA3S2859IRTWR is sourced from the original manufacturer or authorized distributors?
All OPA3S2859IRTWR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that OPA3S2859IRTWR meets industry standards.
7.What is the process for return or replacement of OPA3S2859IRTWR?
All OPA3S2859IRTWR units undergo pre-shipment inspection (PSI). If there is an issue with OPA3S2859IRTWR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The OPA3S2859IRTWR part is unused and in its original packaging.
Return procedure for OPA3S2859IRTWR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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