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Texas Instruments OPA659IDRBT
- Part No.:
- OPA659IDRBT
- Manufacturer:
- Texas Instruments
- Category:
- Instrumentation, Op Amps, Buffer Amps
- Package:
- 8-VDFN Exposed Pad
- Datasheet:
-
OPA659IDRBT.pdf
- Description:
- IC OPAMP JFET 1 CIRCUIT 8SON
- Quantity:
- Payment:
- Shipping:
Inventory:309
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Product details
Overview
OPA659IDRBT from Texas Instruments is a unity-gain stable, wideband JFET-input operational amplifier optimized for high-impedance, low-noise transimpedance and buffer applications. It delivers 650 MHz small-signal bandwidth (G = 1 V/V), 2550 V/μs slew rate, and 8.9 nV/√Hz input voltage noise - enabling precision photodiode amplification in wafer inspection and optical time-domain reflectometry (OTDR) systems.
For engineers reviewing the OPA659IDRBT datasheet, OPA659IDRBT pinout, OPA659IDRBT application, or OPA659IDRBT equivalent, key selection criteria include its unity-gain stability with JFET input, ultra-low input bias current (±10 pA), fast overdrive recovery (8 ns), and compatibility with ±3.5 V to ±6.5 V split supplies or 7–13 V single supply.
Technical Context
The OPA659IDRBT uses a voltage-feedback architecture with a compensated JFET input stage, achieving unity-gain stability without external compensation. Its 350 MHz gain-bandwidth product supports broadband transimpedance configurations up to 100 MHz with photodiode capacitances ≤47 pF, while maintaining <12% pulse overshoot and 8 ns settling to 1% on a 4-V step.
It operates across –40°C to +85°C with ±6 V nominal supply, delivering ±70 mA output drive into 100 Ω and supporting rail-to-rail input common-mode range (±3.37 V). Input impedance exceeds 1 TΩ differential and 2.5 TΩ common-mode, critical for high-Z sensor interfacing.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Small-Signal Bandwidth | 650 MHz at G = 1 V/V - enables full-speed signal acquisition in oscilloscope front-ends and TOF sensing |
| Slew Rate | 2550 V/μs - preserves fidelity of fast transient pulses without distortion in photodiode TIA stages |
| Input Voltage Noise | 8.9 nV/√Hz - minimizes integrated noise in wideband transimpedance applications up to 100 MHz |
| Input Bias Current | ±10 pA (typ) - ensures minimal DC error when interfacing with high-impedance photodiodes or piezoelectric sensors |
| Gain-Bandwidth Product | 350 MHz - defines maximum usable closed-loop bandwidth for noninverting gains >1 (e.g., 70 MHz at G = 5) |
| THD @ 10 MHz | –78 dBc (2nd harmonic) - meets spectral purity requirements in optical receiver analog front-ends |
| Overdrive Recovery | 8 ns - restores linear operation rapidly after saturation, critical in pulsed OTDR and LIDAR receivers |
Pinout & Package
The OPA659IDRBT is packaged in a 5-pin SOT-23 (DBV) package with dimensions 2.90 mm × 1.60 mm and exposed pad thermal design. Pin 1 is NC (no connection); pins 2–5 are assigned as –VS, VIN+, VOUT, and +VS respectively.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (NC) | No Connection | Internally unconnected; must be left floating or tied to ground per layout best practice |
| Pin 2 (–VS) | Negative Power Supply | Accepts –3.5 V to –6.5 V in split-supply mode; serves as reference for input/output common-mode range |
| Pin 3 (VIN+) | Noninverting Input | High-impedance JFET node (1 TΩ || 1 pF); used for buffered high-Z source connections |
| Pin 4 (VOUT) | Amplifier Output | Capable of ±70 mA drive into 100 Ω; requires 50 Ω series termination for 50 Ω system matching |
| Pin 5 (+VS) | Positive Power Supply | Accepts +3.5 V to +6.5 V in split-supply mode; powers internal bias circuitry and output stage |
Key Features
| Feature | Design Value |
|---|---|
| Unity-Gain Stability | Internally compensated for stable operation at G = 1 V/V without external components - eliminates risk of oscillation in buffer configurations |
| JFET Input Stage | Provides 1 TΩ input impedance and ±10 pA bias current - preserves signal integrity from high-impedance photodiodes and capacitive sensors |
| Low Input Voltage Noise | 8.9 nV/√Hz at >100 kHz - enables sub-picoamp current resolution in transimpedance amplifiers with RF ≥ 1 kΩ |
| Fast Settling Time | 8 ns to 1% on 4-V step - supports high-repetition-rate pulsed optical detection in wafer scanning equipment |
| ESD Robustness | ±4000 V HBM rating - withstands handling and board-level ESD events without latch-up or parametric shift |
Applications
| High-Impedance Oscilloscope Input Amplifiers | Wideband Photodiode Transimpedance Amplifiers |
|---|---|
Use Scenario: Front-end amplification of passive probe signals in 1 GHz-class digital oscilloscopes. IC Role / Device Role / Timing Role: Unity-gain buffer isolating probe tip from ADC input while preserving bandwidth and minimizing loading. Use Value: 650 MHz bandwidth and 8.9 nV/√Hz noise ensure accurate capture of fast edges without amplitude droop or jitter degradation. | Use Scenario: Converting photocurrent from avalanche photodiode (APD) in optical time-domain reflectometry (OTDR) test sets. IC Role / Device Role / Timing Role: Transimpedance amplifier with RF = 10 kΩ–1 MΩ, operating up to 100 MHz with CD ≤ 47 pF. Use Value: 350 MHz GBP and 8 ns overdrive recovery enable precise distance resolution and dynamic range >60 dB in fiber fault localization. |
| High-Speed Time-of-Flight (TOF) Sensing | Wafer Scanning Equipment |
Use Scenario: Pulsed laser receiver in industrial 3D LiDAR for robotic guidance and metrology. IC Role / Device Role / Timing Role: Low-noise, fast-settling amplifier capturing nanosecond-scale return pulses from diffused targets. Use Value: 2550 V/μs slew rate and 8 ns settling preserve pulse timing accuracy within ±50 ps, critical for sub-millimeter depth resolution. | Use Scenario: Signal conditioning of scanning electron microscope (SEM) or atomic force microscope (AFM) detector outputs. IC Role / Device Role / Timing Role: High-Z preamplifier for capacitive or secondary-electron detectors requiring minimal charge injection. Use Value: ±10 pA input bias current and 1 TΩ input impedance prevent signal decay during long integration periods in nanoscale imaging. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed JFET-input op amp applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| OPA656IDBVT | Lower bandwidth (230 MHz), lower quiescent current (290 mA vs 32 mA), same JFET input and unity-gain stability | Better suited for battery-powered or thermally constrained designs where 650 MHz is unnecessary | Select OPA656IDBVT when power efficiency outweighs bandwidth requirement and photodiode capacitance is <10 pF |
| OPA657U | Higher bandwidth (1.6 GHz), higher slew rate (700 V/μs), but only stable at G ≥ +7 V/V - not unity-gain stable | Requires minimum gain of 7; unsuitable for direct buffer or low-gain TIA configurations | Choose OPA657U only when closed-loop gain ≥7 is acceptable and >1 GHz small-signal response is required |
Compared with OPA656IDBVT and OPA657U, the OPA659IDRBT uniquely balances 650 MHz unity-gain bandwidth, ultra-low input current, and robust transimpedance stability - making it the only option among the three suitable for G = 1 photodiode TIAs with >22 pF junction capacitance.
Availability
OPA659IDRBT is available at Aetrix Electronics and suitable for high-speed optical sensing, semiconductor test instrumentation, and precision data acquisition requiring stable component supply with traceable lot control and extended temperature support.
Supply support for OPA659IDRBT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Texas Instruments is a global semiconductor company specializing in analog and embedded processing technologies, with leadership in high-performance op amps and precision signal chain solutions.
The OPA659IDRBT belongs to TI's OPA high-speed precision op amp family, designed specifically for wideband, low-noise, high-impedance applications including optical front-ends, test equipment, and scientific instrumentation.
FAQ
What is the recommended supply voltage range for OPA659IDRBT?
The OPA659IDRBT supports split-supply operation from ±3.5 V to ±6.5 V and single-supply operation from 7 V to 13 V. At ±6 V, it achieves full specified performance including 650 MHz bandwidth and 2550 V/μs slew rate. Operation outside these ranges may degrade AC performance or cause instability.
Can OPA659IDRBT be used in transimpedance amplifier configurations?
Yes, the OPA659IDRBT is explicitly optimized for transimpedance amplifier use. Its 350 MHz gain-bandwidth product, low input bias current (±10 pA), and 8.9 nV/√Hz voltage noise enable stable, wideband TIAs with photodiode capacitances up to 47 pF - validated in Figures 28–31 of the SBOS342C datasheet.
Does OPA659IDRBT require external compensation for unity-gain stability?
No, the OPA659IDRBT is internally compensated and unity-gain stable. It does not require external compensation components in G = 1 V/V configurations. However, for capacitive loads >10 pF, a series isolation resistor (RISO) between output and load is recommended per Figure 24 in the datasheet.
What is the thermal performance of OPA659IDRBT in the SOT-23 package?
In the 5-pin SOT-23 (DBV) package, the OPA659IDRBT has a junction-to-ambient thermal resistance (RθJA) of 209 °C/W. With typical quiescent current of 32 mA at ±6 V, power dissipation is ~384 mW - resulting in ~80 °C junction rise above ambient at TA = 25 °C, well within the 125 °C continuous reliability limit.
How does OPA659IDRBT handle input overdrive conditions?
The OPA659IDRBT recovers from overdrive in 8 ns (typical) when configured with G = ±2 V/V, as shown in Figures 20–21. Internal ESD diodes clamp inputs to the rails, and the device tolerates continuous input currents up to 30 mA - but external series resistors are recommended if driving from ±12 V sources to avoid exceeding absolute max ratings.
OPA659IDRBT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Texas Instruments
- Series:
- -
- Package/Case:
- 8-VDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Amplifier Type:
- J-FET
- Number of Circuits:
- 1
- Output Type:
- -
- Slew Rate:
- 2550V/µs
- Gain Bandwidth Product:
- 350 MHz
- -3db Bandwidth:
- 650 MHz
- Current - Input Bias:
- 10 pA
- Voltage - Input Offset:
- 1 mV
- Current - Supply:
- 32mA
- Current - Output / Channel:
- 70 mA
- Voltage - Supply Span (Min):
- 7 V
- Voltage - Supply Span (Max):
- 13 V
- Operating Temperature:
- -40°C ~ 85°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SON (3x3)
OPA659IDRBT FAQ
1.How can I place an order for OPA659IDRBT through Aetrix?
Please submit a Request for Quotation (RFQ) for OPA659IDRBT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for OPA659IDRBT reliable?
The price and inventory of OPA659IDRBT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for OPA659IDRBT is usually 5 days.
3.What payment methods are accepted for OPA659IDRBT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for OPA659IDRBT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for OPA659IDRBT?
OPA659IDRBT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your OPA659IDRBT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for OPA659IDRBT?
For technical support, including OPA659IDRBT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your OPA659IDRBT requirements.
6.How does Aetrix verify that OPA659IDRBT is sourced from the original manufacturer or authorized distributors?
All OPA659IDRBT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that OPA659IDRBT meets industry standards.
7.What is the process for return or replacement of OPA659IDRBT?
All OPA659IDRBT units undergo pre-shipment inspection (PSI). If there is an issue with OPA659IDRBT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The OPA659IDRBT part is unused and in its original packaging.
Return procedure for OPA659IDRBT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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