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Texas Instruments OPA817DTKR
- Part No.:
- OPA817DTKR
- Manufacturer:
- Texas Instruments
- Category:
- Instrumentation, Op Amps, Buffer Amps
- Package:
- 8-WFDFN Exposed Pad
- Datasheet:
-
OPA817DTKR.pdf
- Description:
- 800-MHZ, HIGH-PRECISION UNITY-GA
- Quantity:
- Payment:
- Shipping:
Inventory:1,290
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Product details
Overview
OPA817DTKR from Texas Instruments is a unity-gain stable, FET-input voltage-feedback operational amplifier optimized for high-speed, high-precision signal conditioning in demanding analog front-ends. It delivers 800MHz small-signal bandwidth at G = 1 V/V, 400MHz gain-bandwidth product, 1000V/µs slew rate, and ±250μV max input offset voltage - enabling accurate buffering and amplification of fast, low-amplitude signals in optical time-domain reflectometry (OTDR) and wideband transimpedance amplifier (TIA) circuits.
For engineers reviewing the OPA817DTKR datasheet, OPA817DTKR pinout, OPA817DTKR application, or OPA817DTKR equivalent, key selection considerations include its JFET-input architecture with 4.5nV/√Hz voltage noise and 2pA input bias current, thermal-pad-equipped 3mm × 3mm WSON-8 package, power-down functionality with 55µA shutdown current, and industrial temperature range (–40°C to +105°C) operation.
Technical Context
The OPA817DTKR employs a high-voltage complementary bipolar SiGe process with a low-noise JFET input stage, delivering unity-gain stability without external compensation. Its open-loop response features a dominant pole at ~400kHz and a second pole beyond 0dB crossover, yielding ~55° phase margin at G = 1 - critical for maintaining stability in high-Z sensor interfaces and active probe designs.
It integrates a dedicated FB (feedback) pin adjacent to IN– to minimize parasitic inductance/capacitance in the feedback path, supporting robust high-frequency performance up to 800MHz. The PD pin enables fast enable/disable control (0.3µs turn-on, 0.1µs turn-off), while internal ESD protection (±2000V HBM) safeguards against handling and system-level transients.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Small-signal BW (G = 1) | 800MHz - supports full-power analog sampling of signals up to Nyquist frequency in high-speed digitizers without gain-dependent bandwidth collapse. |
| Gain-bandwidth product | 400MHz - defines maximum usable closed-loop bandwidth at higher gains (e.g., 40MHz at G = 10 V/V). |
| Slew rate | 1000V/µs - enables clean reproduction of large-signal steps (e.g., 2VPP) up to 250MHz without slewing distortion. |
| Input offset voltage | ±250μV max - ensures DC accuracy in precision TIA and medical analyzer front-ends where offset-induced baseline drift must be minimized. |
| Input voltage noise | 4.5nV/√Hz - preserves SNR in high-gain, high-impedance photodiode amplifiers operating above 200kHz. |
| Supply current | 23.5mA - balances speed and power in battery-sensitive test equipment requiring burst-mode operation. |
| Power-down current | 55µA - reduces standby power by >99% in portable OTDR modules during idle intervals. |
Pinout & Package
OPA817DTKR is housed in an 8-pin WSON package (3mm × 3mm) with an exposed thermal pad for enhanced heat dissipation in compact PCB layouts. The thermal pad is electrically isolated and recommended to connect to a ground plane for optimal thermal and EMI performance.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| PD (Pin 1) | Power-down control input | Active-high logic: ≥(VS+) – 1V enables amplifier; ≤(VS+) – 3V disables it. Internal 2-MΩ pullup allows floating for default-enable operation. |
| IN– (Pin 3) | Inverting input | High-impedance JFET node; connects directly to FB pin via short PCB trace to minimize feedback loop parasitics. |
| IN+ (Pin 4) | Noninverting input | High-impedance JFET node; used for reference-biased configurations in single-supply DAQ front-ends. |
| NC (Pin 6) | No-connect terminal | Internally unconnected - must remain unpopulated or left floating; no routing or grounding required. |
| OUT (Pin 7) | Amplifier output | Low-impedance voltage source capable of ±58mA linear drive into 100Ω loads at ±1V swing. |
| VS– (Pin 5) | Negative supply rail | Accepts –6V to –6.3V in split-supply operation; common return for thermal pad connection. |
| VS+ (Pin 8) | Positive supply rail | Accepts +6V to +12.6V; total supply range supports 9VPP output swing at 12V supply. |
| FB (Pin 2) | Feedback node | Internally tied to OUT via low-resistance metal trace (0.7Ω typ); enables ultra-short RF placement for improved stability at >500MHz. |
Key Features
| Feature | Design Value |
|---|---|
| FET-input architecture | Enables 2pA input bias current and 4.5nV/√Hz voltage noise - essential for high-Z photodiode TIAs and electrochemical sensor interfaces. |
| Dedicated FB pin | Reduces feedback path inductance by >70% vs conventional layouts, eliminating need for complex compensation networks in 800MHz G = 1 buffers. |
| Unity-gain stability | Guarantees stable operation without external compensation across all gains ≥1 V/V - simplifies design of active probes and oscilloscope front-ends. |
| Industrial temperature range | Specified from –40°C to +105°C - ensures consistent offset drift (±3.5μV/°C max) and bandwidth in wafer scanning equipment and outdoor test gear. |
| Fast power-down control | 0.1µs turn-off and 0.3µs turn-on delays allow microsecond-scale power gating in battery-powered optical modules. |
Applications
| Optical Time-Domain Reflectometry (OTDR) | High-Speed Data Acquisition Front-End |
|---|---|
Use Scenario: Detecting fiber fault locations by analyzing backscattered light pulses with nanosecond timing resolution. IC Role / Device Role / Timing Role: Transimpedance amplifier converting photodiode current to high-fidelity voltage waveform with minimal added noise and distortion. Use Value: 4.5nV/√Hz input voltage noise and 2pA bias current preserve dynamic range for weak backscatter signals; 800MHz bandwidth captures sub-ns pulse edges. |
Use Scenario: Digitizing analog sensor outputs in automated test equipment requiring >100MS/s sampling with <12-bit ENOB. IC Role / Device Role / Timing Role: High-input-impedance buffer isolating ADC input from source impedance variations while maintaining signal integrity. Use Value: ±250μV max offset and ±3.5μV/°C drift ensure DC accuracy over temperature; 1000V/µs slew rate prevents step-response distortion at full-scale transitions. |
| Active Oscilloscope Probe | Wideband Medical Analyzer Front-End |
Use Scenario: Attenuating and conditioning high-frequency signals from DUTs before transmission to scope input with minimal loading. IC Role / Device Role / Timing Role: Unity-gain buffer providing 1MΩ || 12pF input impedance and driving 50Ω coaxial cable with low group delay variation. Use Value: 800MHz small-signal bandwidth and 0.1dB flatness to 100MHz ensure faithful signal replication; FB pin minimizes layout-induced peaking. |
Use Scenario: Amplifying low-level bio-signals (e.g., EEG, ECG) with high common-mode rejection and minimal electrode polarization error. IC Role / Device Role / Timing Role: Precision instrumentation amplifier first stage with JFET inputs rejecting electrode DC offsets and 50/60Hz interference. Use Value: 84–110dB CMRR and 78–85dB open-loop gain maintain signal fidelity; low 2pA bias current prevents electrode voltage shift in dry-sensor applications. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed, high-precision op amp applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| OPA818IDTKR | Higher GBWP (2700MHz) but requires minimum gain of 7 V/V; 2.2nV/√Hz noise; 1400V/µs slew rate. | Not unity-gain stable - unsuitable for G = 1 buffers or active probes without gain-setting resistors. | Select OPA818IDTKR only when fixed gain ≥7 V/V is acceptable and lower noise dominates over flexibility. |
| OPA656UB | Lower GBWP (230MHz), 7nV/√Hz noise, 290V/µs slew rate; unity-gain stable; older BiFET process. | Outperforms OPA817DTKR in DC precision (50μV max offset) but lacks bandwidth for >250MHz applications. | Choose OPA656UB for sub-100MHz precision DAQ where ultra-low offset outweighs speed requirements. |
Compared with OPA817DTKR, OPA818IDTKR trades unity-gain stability for higher bandwidth and lower noise, while OPA656UB prioritizes DC accuracy over speed - making OPA817DTKR the balanced choice for 100–800MHz, unity-gain, low-noise applications requiring industrial temperature support.
Availability
OPA817DTKR is available at Aetrix Electronics and suitable for high-speed data acquisition (DAQ), optical communication modules, and test and measurement front-ends requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for OPA817DTKR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Texas Instruments is a global semiconductor leader specializing in analog and embedded processing technologies, with decades of expertise in high-performance op amps and precision signal chain solutions.
The OPA817DTKR belongs to TI's high-speed precision op amp product line, engineered specifically for applications demanding simultaneous wide bandwidth, low noise, and DC accuracy - including optical sensing, medical instrumentation, and advanced test equipment.
FAQ
What is the maximum supply voltage for OPA817DTKR?
The absolute maximum total supply voltage (VS+ – VS–) for OPA817DTKR is 13V, with recommended operation between 6V and 12.6V. Exceeding 13V risks permanent damage per Absolute Maximum Ratings. At 12.6V supply, the device supports up to 9VPP output swing - critical for high-dynamic-range OTDR pulse generation. OPA817DTKR maintains specified performance across this full range when ambient temperature stays within –40°C to +105°C.
Does OPA817DTKR require external compensation for unity-gain stability?
No, OPA817DTKR is internally compensated for unity-gain stability and operates reliably at G = 1 V/V without external components. Its open-loop phase margin is ~55° at 0dB crossover, verified across –40°C to +105°C and varying capacitive loads. This eliminates compensation network design effort in active probe and buffer applications - unlike alternatives such as OPA818IDTKR, which mandates minimum gain of 7 V/V.
How does the FB pin on OPA817DTKR improve high-frequency performance?
The FB pin on OPA817DTKR provides a dedicated, low-inductance connection point for the feedback resistor, placed adjacent to IN– to minimize parasitic capacitance and trace inductance in the feedback loop. Internally tied to OUT with 0.7Ω metal resistance, it enables stable 800MHz operation without added compensation. This avoids the bandwidth-phase margin tradeoffs common in conventional layouts - directly improving pulse fidelity in DAQ and oscilloscope front-end designs using OPA817DTKR.
What is the input bias current specification for OPA817DTKR over temperature?
OPA817DTKR specifies ±20pA typical input bias current at 25°C, with a maximum of ±1500pA over the full –40°C to +105°C industrial temperature range. This picoampere-level bias current is enabled by its JFET input stage and remains stable across common-mode voltages from –3.9V to +2.7V. Such low bias current prevents voltage errors in high-impedance sensor interfaces like photodiode TIAs and pH electrodes - a key differentiator versus bipolar-input op amps.
Can OPA817DTKR drive a 50Ω load at full bandwidth?
Yes, OPA817DTKR can drive a 50Ω load with linear output current up to ±58mA at ±1V output swing, supporting 2VPP signals into 50Ω with minimal distortion. Its closed-loop output impedance is 0.04Ω at 100kHz, ensuring minimal signal loss. For 2VPP, 10MHz signals into 50Ω, HD2/HD3 remain at –86dBc/–100dBc - confirming suitability for driving coaxial cables in active probes and test equipment front-ends using OPA817DTKR.
OPA817DTKR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Texas Instruments
- Series:
- -
- Package/Case:
- 8-WFDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Amplifier Type:
- J-FET
- Number of Circuits:
- 1
- Output Type:
- -
- Slew Rate:
- 1000V/µs
- Gain Bandwidth Product:
- 400 MHz
- -3db Bandwidth:
- 40 MHz
- Current - Input Bias:
- 2 pA
- Voltage - Input Offset:
- 50 µV
- Current - Supply:
- 23.5mA
- Current - Output / Channel:
- 100 mA
- Voltage - Supply Span (Min):
- 6 V
- Voltage - Supply Span (Max):
- 12.6 V
- Operating Temperature:
- -40°C ~ 105°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-WSON (3x3)
OPA817DTKR FAQ
1.How can I place an order for OPA817DTKR through Aetrix?
Please submit a Request for Quotation (RFQ) for OPA817DTKR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for OPA817DTKR reliable?
The price and inventory of OPA817DTKR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for OPA817DTKR is usually 5 days.
3.What payment methods are accepted for OPA817DTKR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for OPA817DTKR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for OPA817DTKR?
OPA817DTKR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your OPA817DTKR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for OPA817DTKR?
For technical support, including OPA817DTKR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your OPA817DTKR requirements.
6.How does Aetrix verify that OPA817DTKR is sourced from the original manufacturer or authorized distributors?
All OPA817DTKR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that OPA817DTKR meets industry standards.
7.What is the process for return or replacement of OPA817DTKR?
All OPA817DTKR units undergo pre-shipment inspection (PSI). If there is an issue with OPA817DTKR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The OPA817DTKR part is unused and in its original packaging.
Return procedure for OPA817DTKR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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