Texas Instruments OPA828IDGNR

Overview

OPA828IDGNR from Texas Instruments is a single-channel, JFET-input operational amplifier optimized for high-precision, low-noise signal conditioning in demanding analog front ends. It delivers 25 µV input offset voltage, 0.2 µV/°C drift, 4 nV/√Hz input voltage noise at 1 kHz, 45-MHz gain bandwidth, and operates from ±4 V to ±18 V supplies. It is used in high-resolution data acquisition systems requiring stable DC accuracy and fast transient response.

For engineers reviewing the OPA828IDGNR datasheet, OPA828IDGNR pinout, OPA828IDGNR application, or OPA828IDGNR equivalent, this device is selected where sub-100-nV RMS 0.1–10 Hz noise, MUX-friendly inputs, overload power limiting, and thermally enhanced HVSSOP packaging are critical for precision instrumentation and sensor interface designs.

Technical Context

The OPA828IDGNR implements a laser-trimmed JFET input stage with phase-reversal protection, enabling robust operation beyond the specified common-mode range without output inversion. Its SiGe-complementary bipolar-JFET process enables simultaneous optimization of dc precision (offset, drift) and ac performance (45 MHz GBW, 150 V/µs slew rate).

It features an internal overload power limiter and MUX-friendly inputs that maintain low bias current (<0.2 pA typical) even during channel switching transients. The DGN package includes an electrically isolated thermal pad tied to V− or ground to minimize input leakage and improve thermal resistance (R_θJB = 29.2 °C/W).

Key Specifications

Pinout & Package

OPA828IDGNR is housed in an 8-pin HVSSOP (DGN) package with exposed thermal pad. The package provides 56.7 °C/W junction-to-ambient thermal resistance and requires soldering the thermal pad to a ground or V− plane for optimal thermal and leakage performance.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-precision, low-noise op amp applications.

Compared with OPA827ID and ADA4625-1ACPZ-R7, the OPA828IDGNR uniquely combines HVSSOP thermal performance, laser-trimmed dc precision, MUX compatibility, and built-in overload/phase-reversal protection-making it the only option qualified for high-channel-count, high-accuracy, thermally constrained instrumentation front ends.

Availability

OPA828IDGNR is available at Aetrix Electronics and suitable for data acquisition systems, ultrasound scanners, and lab instrumentation requiring stable component supply, long-term production continuity, and traceable sourcing.

Supply support for OPA828IDGNR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader specializing in analog and embedded processing technologies, with decades of heritage in precision op amp design and manufacturing.

The OPAx828 product line was engineered to replace OPA627/OPA827 with superior noise, drift, and thermal performance-targeting next-generation high-resolution DAQ, medical imaging, and test equipment.

FAQ

What is the maximum supply voltage for OPA828IDGNR?

The OPA828IDGNR supports a dual-supply range of ±4 V to ±18 V (36 V total), and a single-supply range of 8 V to 36 V. Absolute maximum ratings specify ±20 V, but operation beyond ±18 V is not characterized and may degrade long-term reliability or parametric performance. Always refer to Section 6.1 of the official SBOS671D datasheet for safe operating limits.

Does OPA828IDGNR require external compensation for unity-gain stability?

No, the OPA828IDGNR is internally compensated for unity-gain stability. It achieves 57° phase margin with 30 pF capacitive load and exhibits no peaking or oscillation in G = +1 or G = –1 configurations per Figure 6-28 and Figure 6-29. However, layout practices-including short traces, proper grounding of the thermal pad, and local bypassing-are essential to maintain stability in high-frequency applications.

How is the thermal pad of OPA828IDGNR connected in PCB layout?

The exposed thermal pad on the OPA828IDGNR (DGN package) must be soldered to a copper pour tied to V− or ground. Though electrically isolated (>10 MΩ) from the die, connecting it to V− minimizes input leakage current and improves thermal resistance (R_θJB = 29.2 °C/W). TI recommends using 4–9 thermal vias (0.3-mm diameter) under the pad, connected to an inner-layer ground plane.

Can OPA828IDGNR drive heavy capacitive loads like ADC inputs directly?

The OPA828IDGNR can drive up to 30 pF capacitive load stably in unity gain, as verified in the datasheet's typical characteristics. For heavier loads (e.g., >100 pF ADC inputs), external isolation resistance (R_ISO) is required-TI recommends 25 Ω to 50 Ω in series with the output. This maintains phase margin while preserving settling time; see Figure 6-28 and Figure 6-29 for overshoot vs. R_ISO curves.

Is OPA828IDGNR suitable for multiplexed sensor arrays?

Yes-the OPA828IDGNR features MUX-friendly inputs with ultra-low 0.2 pA typical input bias current and no phase reversal when inputs exceed common-mode limits. Its input stage remains stable during channel switching transients, minimizing charge injection and baseline shift. This makes OPA828IDGNR ideal for high-channel-count sensor conditioners in DAQ and industrial I/O modules.