onsemi P2N2222AG

Overview

P2N2222AG from onsemi is an NPN silicon general-purpose amplifier transistor in TO-92 package, rated for 40 V_CEO, 600 mA continuous collector current, and 625 mW power dissipation at T_A = 25°C. It delivers DC current gain (h_FE) of 75–300 at I_C = 10 mA, V_CE = 10 V, and supports switching applications with t_s ≤ 225 ns storage time and f_T = 300 MHz - commonly used in low-power signal amplification and digital logic interface circuits.

For engineers reviewing the P2N2222AG datasheet, pinout, applications, or equivalent options, key selection considerations include its V_CEO/I_C rating margin, h_FE variation across temperature, saturation voltage at I_C/I_B = 10, thermal resistance (R_JA = 200 °C/W), and TO-92 lead-form compatibility with legacy 2N2222-based designs.

Technical Context

The P2N2222AG operates as a discrete bipolar junction transistor optimized for linear amplification and saturated-switching modes. Its base-emitter and collector-base junctions are engineered for stable gain over −55°C to +150°C junction temperature range, with V_BE(sat) = 0.6–1.2 V and V_CE(sat) = 0.3–1.0 V under defined I_C/I_B drive conditions.

Small-signal parameters include h_fe = 75–375 at 1–10 kHz, C_obo = 8.0 pF, C_ibo = 25 pF, and noise figure NF ≤ 4.0 dB at I_C = 100 µA - confirming suitability for low-noise preamplifier stages and medium-speed digital switching where capacitance and delay constraints apply.

Key Specifications

Pinout & Package

Package: TO-92 (Case 29, Style 17), Pb-free, straight-lead tape-and-ammo packaging (2000 units/reel). Dimensions conform to ANSI Y14.5M-1982; lead pitch 2.54 mm, body height ≤ 5.20 mm.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN general-purpose transistor applications.

Compared with PN2222A and MPS2222A, the P2N2222AG offers the lowest R_JA, highest f_T, and broadest h_FE range - making it preferred for thermally constrained or wideband analog designs, while PN2222A suits high-gain bias-critical circuits and MPS2222A fits cost-driven commodity switching.

Availability

P2N2222AG is available at Aetrix Electronics and suitable for audio preamplifiers, microcontroller GPIO drivers, and DC motor speed controllers requiring stable component supply, long-term obsolescence mitigation, and RoHS-compliant manufacturing.

Supply support for P2N2222AG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power management, analog, sensors, and connectivity solutions for automotive, industrial, cloud, and consumer markets.

The P2N2222AG belongs to onsemi's legacy bipolar transistor product line, designed for reliability-critical general-purpose amplification and switching in cost-sensitive, high-volume applications where proven performance and long-lifecycle support are essential.

FAQ

What is the maximum collector-emitter voltage rating for the P2N2222AG?

The P2N2222AG has a maximum collector-emitter voltage (V_CEO) rating of 40 Vdc at T_A = 25°C. This rating remains valid across the full operating junction temperature range of −55°C to +150°C, and must not be exceeded to prevent avalanche breakdown. Derating is not specified beyond the absolute maximum, so design margins should maintain at least 20% headroom in safety-critical applications. The P2N2222AG datasheet confirms this value in both the Maximum Ratings and Electrical Characteristics tables.

Does the P2N2222AG support switching applications, and what are its key timing parameters?

Yes, the P2N2222AG is qualified for switching use with documented delay time (t_d) ≤ 10 ns, rise time (t_r) ≤ 25 ns, storage time (t_s) ≤ 225 ns, and fall time (t_f) ≤ 60 ns under standard test conditions (V_CC = 30 V, I_C = 150 mA, I_B1 = I_B2 = 15 mA). These values confirm suitability for PWM frequencies up to 100 kHz with minimal overlap loss. The P2N2222AG's low V_CE(sat) and controlled storage time directly reduce switching losses in relay drivers and LED dimmers.

What is the DC current gain (h_FE) range of the P2N2222AG, and how does it vary with operating conditions?

The P2N2222AG exhibits h_FE = 35–300 depending on collector current and temperature: minimum 35 at I_C = 0.1 mA, 50 at I_C = 1.0 mA, 75 at I_C = 10 mA, and 40 at I_C = 500 mA (all at V_CE = 10 V, T_A = 25°C). At −55°C, h_FE drops to ≥35 at I_C = 10 mA, while at 125°C it reaches up to 300. This wide spread means base resistors must be sized for worst-case h_FE to guarantee saturation - the P2N2222AG's datasheet provides full h_FE vs. I_C curves across temperature.

Is the P2N2222AG RoHS compliant, and what packaging options are available?

Yes, the P2N2222AG is Pb-free and RoHS compliant, as confirmed by onsemi's marking diagram ('A' suffix denotes Pb-free package) and compliance documentation referenced in the datasheet. It is supplied in TO-92 straight-lead tape-and-ammo packaging with 2000 units per reel. Bulk and bent-lead variants exist for other part numbers (e.g., P2N2222ARL1G), but the P2N2222AG specifically uses straight-lead tape-and-reel format for automated assembly compatibility.

How does the thermal performance of the P2N2222AG compare to similar TO-92 transistors?

The P2N2222AG has a junction-to-ambient thermal resistance (R_JA) of 200 °C/W in free-air conditions - among the lowest for standard TO-92 NPN transistors. This is 20 °C/W better than the MPS2222A (220 °C/W) and matches the PN2222A. Combined with its 625 mW ambient-rated power dissipation, this allows higher sustained current before thermal shutdown. The P2N2222AG's R_JC = 83.3 °C/W also supports optional PCB copper pour heatsinking for extended duty cycles.