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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi P2N2222ARL1

Name: P2N2222ARL1
Brand: onsemi
SKU: P2N2222ARL1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: P2N2222ARL1

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-226-3, TO-92-3 Long Body, Formed Leads

Datasheet:: P2N2222ARL1.pdf

Description:: TRANS NPN 40V 0.6A TO92

Quantity:: RFQ Add To RFQ list

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Inventory:3,541

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Product details

Overview

P2N2222ARL1 from onsemi is an NPN silicon general-purpose amplifier transistor in TO-92 package, rated for 40 V_CEO, 600 mA_C, and 625 mW at T_A = 25°C, commonly used in low-power switching and linear amplification circuits such as signal buffering and relay drivers.

For engineers reviewing the P2N2222ARL1 datasheet, pinout, applications, or equivalent options, key selection criteria include DC current gain (h_FE = 35–300), saturation voltage (V_CE(sat) ≤ 1.0 V at I_C = 500 mA), thermal resistance (R_JA = 200 °C/W), and Pb-free compliance per J-STD-609.

Technical Context

The P2N2222ARL1 operates as a discrete bipolar junction transistor with fixed NPN polarity and single-die construction. Its electrical behavior is defined by three-terminal DC biasing (collector, base, emitter), forward-active region gain control, and well-characterized saturation and cutoff thresholds across −55°C to +150°C junction temperature range.

It supports both analog amplification (via h_fe = 50–375 at 1–10 mA) and digital switching (t_d ≤ 10 ns, t_s ≤ 225 ns), with small-signal f_T = 300 MHz at I_C = 20 mA, V_CE = 20 V, enabling use in RF preamplifier stages up to VHF band.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	40 V - Maximum safe collector-emitter voltage before breakdown under open-base condition.
I_C (cont.)	600 mA - Continuous collector current limit defining maximum load drive capability in DC/low-frequency switching.
P_D @ T_A	625 mW - Power dissipation limit at ambient temperature; requires heatsinking or derating above 25°C (5 mW/°C).
h_FE (min–max)	35–300 - DC current gain range across operating conditions; impacts base drive sizing and stability in amplifier designs.
f_T	300 MHz - Unity-gain frequency indicating usable bandwidth for small-signal amplification up to VHF.
R_JA	200 °C/W - Junction-to-ambient thermal resistance; determines temperature rise under power dissipation without heatsink.
V_CE(sat)	≤ 1.0 V @ I_C = 500 mA - Saturation voltage defining conduction loss and efficiency in switch-mode operation.

Pinout & Package

Package: TO-92 (Case 29-11, Style 17), through-hole, 3-lead plastic package with standard lead spacing and axial orientation. Marking includes "P2N2" and "222A" on body; Pb-free compliant (RL1 suffix).

Pin/Terminal	Circuit Role	Design Meaning
1	Collector	Main current output terminal; connects to load or supply rail in common-emitter configuration.
2	Base	Control input; requires current-limited drive (typically 1/10 of I_C) to achieve saturation.
3	Emitter	Reference terminal; tied to ground or common return path; defines bias point and current reference.

Key Features

Feature	Design Value
NPN silicon planar structure	Enables predictable gain, low leakage (I_CEO ≤ 10 nA), and stable performance over industrial temperature range.
Pb-free TO-92 packaging	Complies with RoHS Directive 2011/65/EU and J-STD-609 Class 3 marking; suitable for lead-free reflow assembly.
High f_T (300 MHz)	Supports broadband amplification and fast-switching applications including pulse generators and oscillator buffers.
Low V_CE(sat) (0.3 V min)	Reduces conduction loss in saturated switching, improving efficiency in relay drivers and LED controls.
Wide h_FE range (35–300)	Accommodates production variation while maintaining functional margin in gain-critical amplifier stages.

Applications

Audio Signal Amplification	Low-Voltage Relay Driving
Use Scenario: Amplifying line-level audio signals (≤ 1 V_pp) in portable intercoms and microphone preamps. IC Role / Device Role / Timing Role: Discrete NPN transistor configured in common-emitter topology for voltage gain and impedance matching. Use Value: Delivers h_fe ≥ 50 at I_C = 1 mA, enabling clean amplification with minimal distortion below 20 kHz.	Use Scenario: Switching 12 VDC relays in HVAC control panels and industrial PLC I/O modules. IC Role / Device Role / Timing Role: Saturated switch controlling relay coil current up to 500 mA with TTL-compatible base drive. Use Value: Achieves V_CE(sat) ≤ 0.3 V at I_C/I_B = 10, minimizing power loss and heat generation during continuous duty.
LED Current Switching	Signal Level Translation
Use Scenario: Driving high-brightness indicator LEDs (20–100 mA) in medical device status panels and test equipment. IC Role / Device Role / Timing Role: Low-side switch with emitter grounded and collector connected to LED anode via current-limiting resistor. Use Value: Supports fast turn-on (t_d ≤ 10 ns) and turn-off (t_f ≤ 60 ns), enabling PWM dimming up to 100 kHz.	Use Scenario: Translating 3.3 V logic outputs to 5 V-tolerant inputs in mixed-voltage microcontroller interfaces. IC Role / Device Role / Timing Role: Emitter-follower buffer providing level-shifting and current gain without inversion. Use Value: Maintains V_BE(on) ≈ 0.7 V across temperature, ensuring reliable threshold tracking between voltage domains.

Audio Signal Amplification

Low-Voltage Relay Driving

Use Scenario: Amplifying line-level audio signals (≤ 1 V_pp) in portable intercoms and microphone preamps.

IC Role / Device Role / Timing Role: Discrete NPN transistor configured in common-emitter topology for voltage gain and impedance matching.

Use Value: Delivers h_fe ≥ 50 at I_C = 1 mA, enabling clean amplification with minimal distortion below 20 kHz.

Use Scenario: Switching 12 VDC relays in HVAC control panels and industrial PLC I/O modules.

IC Role / Device Role / Timing Role: Saturated switch controlling relay coil current up to 500 mA with TTL-compatible base drive.

Use Value: Achieves V_CE(sat) ≤ 0.3 V at I_C/I_B = 10, minimizing power loss and heat generation during continuous duty.

LED Current Switching

Signal Level Translation

Use Scenario: Driving high-brightness indicator LEDs (20–100 mA) in medical device status panels and test equipment.

IC Role / Device Role / Timing Role: Low-side switch with emitter grounded and collector connected to LED anode via current-limiting resistor.

Use Value: Supports fast turn-on (t_d ≤ 10 ns) and turn-off (t_f ≤ 60 ns), enabling PWM dimming up to 100 kHz.

Use Scenario: Translating 3.3 V logic outputs to 5 V-tolerant inputs in mixed-voltage microcontroller interfaces.

IC Role / Device Role / Timing Role: Emitter-follower buffer providing level-shifting and current gain without inversion.

Use Value: Maintains V_BE(on) ≈ 0.7 V across temperature, ensuring reliable threshold tracking between voltage domains.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN general-purpose transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
PN2222A	Same die, identical electrical specs; differs only in branding and packaging traceability (non-onsemi branded).	No functional difference; validated for same switching and amplification roles.	Select when sourcing flexibility or legacy BOM alignment is required.
MMBT2222ALT1G	SMT version (SOT-23); lower R_JA (300 °C/W), reduced I_C rating (600 mA peak, 300 mA continuous).	Requires PCB redesign; better suited for space-constrained, high-density layouts.	Choose for automated assembly and compact designs where thermal management permits.

Compared with PN2222A and MMBT2222ALT1G, the P2N2222ARL1 offers through-hole manufacturability, full 600 mA continuous rating, and direct compatibility with legacy TO-92 footprints-making it optimal for prototyping, repair, and low-volume industrial assemblies.

Availability

P2N2222ARL1 is available at Aetrix Electronics and suitable for audio signal amplification, low-voltage relay driving, and LED current switching requiring stable component supply and long-term industrial availability.

Supply support for P2N2222ARL1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier focused on energy-efficient innovation for automotive, industrial, cloud, and IoT applications.

The P2N2222ARL1 belongs to onsemi's legacy general-purpose transistor product line, designed for cost-sensitive, high-reliability discrete signal switching and amplification in industrial and consumer electronics.

FAQ

What is the maximum continuous collector current rating for the P2N2222ARL1?

The P2N2222ARL1 has a maximum continuous collector current (I_C) rating of 600 mA at T_A = 25°C. This value decreases with rising ambient temperature due to its 5.0 mW/°C derating factor above 25°C. The P2N2222ARL1 must be operated within this limit to avoid thermal runaway or permanent degradation.

Does the P2N2222ARL1 support Pb-free soldering processes?

Yes, the P2N2222ARL1 is Pb-free and complies with J-STD-609 Class 3 marking requirements. It is qualified for lead-free reflow soldering profiles per IPC/JEDEC J-STD-020, with peak temperatures up to 260°C. The RL1 suffix explicitly denotes Pb-free TO-92 packaging for the P2N2222ARL1.

What is the typical DC current gain (h_FE) of the P2N2222ARL1 at 10 mA collector current?

At I_C = 10 mA and V_CE = 10 V, the P2N2222ARL1 exhibits a typical h_FE of 100–300, with minimum guaranteed value of 75. This gain range is confirmed in the official onsemi datasheet and directly impacts base resistor selection in amplifier and switch designs using the P2N2222ARL1.

Can the P2N2222ARL1 be used in RF amplifier applications?

Yes, the P2N2222ARL1 has a current-gain bandwidth product (f_T) of 300 MHz at I_C = 20 mA and V_CE = 20 V, making it suitable for VHF-band RF preamplifiers and oscillator buffer stages. However, its noise figure (NF ≤ 4.0 dB) and capacitance values (C_obo ≤ 8.0 pF) should be verified against specific circuit requirements for the P2N2222ARL1.

What is the thermal resistance junction-to-ambient (R_JA) for the P2N2222ARL1 in free-air conditions?

The P2N2222ARL1 has a specified R_JA of 200 °C/W under free-air conditions with no heatsink. This means a 625 mW power dissipation will raise the junction temperature by 125°C above ambient. For sustained operation, ambient temperature must remain below 25°C or thermal design must include board copper area or forced airflow for the P2N2222ARL1.

P2N2222ARL1 Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-226-3, TO-92-3 Long Body, Formed Leads

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 600 mA

Voltage - Collector Emitter Breakdown (Max):: 40 V

Vce Saturation (Max) @ Ib, Ic:: 1V @ 50mA, 500mA

Current - Collector Cutoff (Max):: 10nA

DC Current Gain (hFE) (Min) @ Ic, Vce:: 100 @ 150mA, 10V

Power - Max:: 625 mW

Frequency - Transition:: 300MHz

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-92 (TO-226)

P2N2222ARL1 FAQ

1.How can I place an order for P2N2222ARL1 through Aetrix?

Please submit a Request for Quotation (RFQ) for P2N2222ARL1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for P2N2222ARL1 reliable?

The price and inventory of P2N2222ARL1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for P2N2222ARL1 is usually 5 days.

3.What payment methods are accepted for P2N2222ARL1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for P2N2222ARL1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for P2N2222ARL1?

P2N2222ARL1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your P2N2222ARL1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for P2N2222ARL1?

For technical support, including P2N2222ARL1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your P2N2222ARL1 requirements.

6.How does Aetrix verify that P2N2222ARL1 is sourced from the original manufacturer or authorized distributors?

All P2N2222ARL1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that P2N2222ARL1 meets industry standards.

7.What is the process for return or replacement of P2N2222ARL1?

All P2N2222ARL1 units undergo pre-shipment inspection (PSI). If there is an issue with P2N2222ARL1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The P2N2222ARL1 part is unused and in its original packaging.

Return procedure for P2N2222ARL1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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