Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

onsemi P2N2222AZL1

Part No.:
P2N2222AZL1
Manufacturer:
onsemi
Category:
Single Bipolar Transistors
Package:
TO-226-3, TO-92-3 Long Body, Formed Leads
Datasheet:
AetrixP2N2222AZL1.pdf
Description:
TRANS NPN 40V 0.6A TO92
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,473

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

P2N2222AZL1 from ON Semiconductor is an NPN silicon general-purpose amplifier transistor in TO-92 package, rated for 40 VCEO, 600 mAC, and 625 mW at TA = 25°C, widely used in low-power switching and linear amplification circuits such as signal buffering and relay drivers.

For engineers reviewing the P2N2222AZL1 datasheet, pinout, applications, or equivalent options, key selection criteria include DC current gain (hFE = 35–300), VCE(sat) ≤ 1.0 V at IC = 500 mA, fT = 300 MHz, thermal resistance RJA = 200 °C/W, and TO-92 mechanical compatibility with legacy 2N2222A designs.

Technical Context

The P2N2222AZL1 operates as a discrete bipolar junction transistor optimized for medium-speed switching (td ≤ 10 ns, ts ≤ 225 ns) and small-signal amplification (hfe = 50–375 at 1–10 mA). Its base-emitter saturation voltage ranges from 0.6 V to 2.0 V depending on drive level, supporting robust turn-on under varied bias conditions.

Designed for ambient operation from −55°C to +150°C, it features low leakage (ICEO ≤ 10 nA, ICBO ≤ 0.01 A at 150°C) and stable gain across temperature, with Cibo = 25 pF and Cobo = 8.0 pF enabling predictable high-frequency behavior up to 300 MHz.

Key Specifications

ParameterValue and Actual Design Meaning
VCEO40 V - Maximum safe collector-emitter voltage before breakdown in common-emitter configuration
IC (cont.)600 mA - Continuous collector current limit defining maximum load-handling capability
PD @ TA625 mW - Power dissipation limit at 25°C ambient, derating 5.0 mW/°C above that temperature
hFE (min)35 - Minimum DC current gain at IC = 0.1 mA, ensuring reliable base drive margin in switching applications
fT300 MHz - Frequency at which small-signal current gain drops to unity, indicating usable bandwidth for RF or fast digital signals
RJA200 °C/W - Thermal resistance from junction to ambient, determining required heatsinking for sustained operation
VCE(sat)≤ 1.0 V - Collector-emitter saturation voltage at IC = 500 mA / IB = 50 mA, directly impacting conduction loss in switch mode

Pinout & Package

Package: TO-92 (Case 29-11, Style 17), through-hole, 3-lead plastic package with standard lead spacing and mechanical dimensions compliant with ANSI Y14.5M-1982.

Pin/TerminalCircuit RoleDesign Meaning
1CollectorMain current output terminal; connects to load or supply rail in common-emitter configurations
2BaseControl input; requires ~0.7 V forward bias and sufficient current (e.g., 15–50 mA) to saturate the transistor
3EmitterCurrent return path; typically grounded or connected to low-side reference in switching topologies

Key Features

FeatureDesign Value
Pb-Free constructionComplies with RoHS Directive 2011/65/EU; marked with "G" suffix variant (P2N2222AZL1G), suitable for lead-free reflow assembly
Wide operating temperature range−55°C to +150°C junction temperature enables use in automotive under-hood, industrial controls, and outdoor equipment
Low noise figureNF ≤ 4.0 dB at IC = 100 µA, supporting low-noise preamplifier stages in sensor interfaces and audio front-ends
Fast switching performanceStorage time ts ≤ 225 ns ensures rapid turn-off in pulse-width modulation and digital logic interfacing
High fT / low capacitance300 MHz fT with Cobo = 8.0 pF and Cibo = 25 pF supports stable RF amplification up to VHF band

Applications

Relay Driver CircuitLow-Voltage Signal Amplifier

Use Scenario: Driving 5–12 V DC relays in PLC I/O modules and home automation controllers where microcontroller GPIOs lack sufficient current.

IC Role / Device Role / Timing Role: Discrete NPN switch providing current gain to interface low-power logic with inductive loads.

Use Value: VCE(sat) ≤ 0.3 V at IC = 150 mA minimizes power loss and coil heating; hFE ≥ 75 ensures reliable saturation with 1–2 mA base drive.

Use Scenario: Amplifying weak analog signals from thermistors, photodiodes, or microphone elements in battery-powered IoT sensors.

IC Role / Device Role / Timing Role: Single-stage common-emitter amplifier configured for voltage gain and impedance matching.

Use Value: fT = 300 MHz and hfe = 300 at 10 mA support stable mid-band gain up to 100 kHz without oscillation or phase shift.

LED Current RegulatorLogic-Level Translator

Use Scenario: Constant-current LED driver in status indicator panels and automotive dashboard lighting where precise brightness control is required.

IC Role / Device Role / Timing Role: Linear-mode current source using emitter resistor feedback to stabilize LED current against supply and temperature variation.

Use Value: Tight hFE spread (35–300) and low VBE(sat) drift enable ±5% current regulation over −40°C to +85°C ambient.

Use Scenario: Translating 3.3 V logic outputs to 5 V TTL-compatible inputs in mixed-voltage embedded systems.

IC Role / Device Role / Timing Role: Active pull-up level shifter operating in common-collector (emitter-follower) configuration.

Use Value: Low VBE(on) (~0.7 V) and high hFE ensure full 5 V swing with <10 ns propagation delay, preserving signal integrity in 10 MHz clock domains.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN general-purpose transistor applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
PN2222ASame electrical specs and TO-92 package; differs only in manufacturer marking and traceability documentationNo functional difference; fully interchangeable in all published schematics referencing 2222A familyPreferred for cost-sensitive consumer electronics where ON Semi's extended lifecycle support is not required
MPS2222ASlightly higher VCEO (60 V vs. 40 V); otherwise identical hFE, fT, and switching timesBetter suited for 24 V industrial bus interfaces where transient overvoltage margin is criticalSelect when system-level surge testing exceeds 40 V or when long-term availability of ON Semi variants is uncertain

Compared with PN2222A and MPS2222A, the P2N2222AZL1 offers ON Semiconductor's documented Pb-free compliance, tighter production lot traceability, and guaranteed availability through authorized distribution channels-critical for medical and industrial OEM programs requiring full material declarations.

Availability

P2N2222AZL1 is available at Aetrix Electronics and suitable for relay drivers, LED current regulators, low-voltage signal amplifiers, and logic-level translators requiring stable component supply across multi-year production cycles.

Supply support for P2N2222AZL1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ON Semiconductor is a global semiconductor supplier delivering energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, cloud, medical, and IoT applications.

The P2N2222AZL1 belongs to ON Semiconductor's legacy 2N2222A family-designed for broad compatibility with decades-old designs while meeting modern environmental standards like RoHS and ELV.

FAQ

What is the maximum continuous collector current rating for the P2N2222AZL1?

The P2N2222AZL1 has a maximum continuous collector current (IC) rating of 600 mA at TA = 25°C. This value decreases with rising ambient temperature due to its 5.0 mW/°C derating factor. At 70°C ambient, the usable IC drops to approximately 412 mA. The P2N2222AZL1 must be operated within this thermal envelope to avoid junction overheating and premature failure.

Does the P2N2222AZL1 support lead-free soldering processes?

Yes, the P2N2222AZL1 is manufactured in a Pb-free TO-92 package compliant with JEDEC J-STD-020 moisture sensitivity level 1 and RoHS Directive 2011/65/EU. It supports standard lead-free reflow profiles with peak temperatures up to 260°C. The Pb-free version is designated P2N2222AZL1G and shares identical electrical characteristics with the base P2N2222AZL1.

What is the typical DC current gain (hFE) of the P2N2222AZL1 at 10 mA collector current?

At IC = 10 mA and VCE = 10 V, the P2N2222AZL1 exhibits a minimum hFE of 75 and a typical value of 200. This gain remains stable across −55°C to +125°C, making the P2N2222AZL1 suitable for temperature-critical amplification stages. Gain variation between units is bounded by the datasheet min/max limits-not guaranteed to match other 2222A variants unless binned.

Can the P2N2222AZL1 replace older 2N2222A transistors in existing PCB layouts?

Yes, the P2N2222AZL1 uses the same TO-92 package (Case 29-11, Style 17) with identical pinout (Collector–Base–Emitter on leads 1–2–3) and mechanical dimensions as legacy 2N2222A parts. No PCB changes are required. However, designers should verify that the P2N2222AZL1's slightly lower VCEO (40 V vs. some 2N2222A versions rated at 45 V) meets system voltage margin requirements.

What is the storage time (ts) specification for the P2N2222AZL1 under standard switching conditions?

The P2N2222AZL1 has a maximum storage time (ts) of 225 ns when tested at VCC = 30 V, IC = 150 mA, and IB1 = IB2 = 15 mA. This parameter reflects minority-carrier removal delay during turn-off and directly impacts maximum switching frequency in PWM or digital logic applications. For higher-speed operation, consider adding a Baker clamp or base resistor network to reduce ts.

P2N2222AZL1 Specifications

Product attributes
Attribute value
Manufacturer:
onsemi
Series:
-
Package/Case:
TO-226-3, TO-92-3 Long Body, Formed Leads
Packaging:
Tape & Box (TB)
Product Status:
Obsolete
Transistor Type:
NPN
Current - Collector (Ic) (Max):
600 mA
Voltage - Collector Emitter Breakdown (Max):
40 V
Vce Saturation (Max) @ Ib, Ic:
1V @ 50mA, 500mA
Current - Collector Cutoff (Max):
10nA
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 150mA, 10V
Power - Max:
625 mW
Frequency - Transition:
300MHz
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-92 (TO-226)

P2N2222AZL1 FAQ

1.How can I place an order for P2N2222AZL1 through Aetrix?

Please submit a Request for Quotation (RFQ) for P2N2222AZL1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for P2N2222AZL1 reliable?

The price and inventory of P2N2222AZL1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for P2N2222AZL1 is usually 5 days.

3.What payment methods are accepted for P2N2222AZL1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for P2N2222AZL1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for P2N2222AZL1?

P2N2222AZL1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your P2N2222AZL1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for P2N2222AZL1?

For technical support, including P2N2222AZL1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your P2N2222AZL1 requirements.

6.How does Aetrix verify that P2N2222AZL1 is sourced from the original manufacturer or authorized distributors?

All P2N2222AZL1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that P2N2222AZL1 meets industry standards.

7.What is the process for return or replacement of P2N2222AZL1?

All P2N2222AZL1 units undergo pre-shipment inspection (PSI). If there is an issue with P2N2222AZL1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The P2N2222AZL1 part is unused and in its original packaging.

Return procedure for P2N2222AZL1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

P2N2222AZL1 Tags

  • P2N2222AZL1
  • P2N2222AZL1 PDF
  • P2N2222AZL1 Datasheet
  • P2N2222AZL1 Specifications
  • P2N2222AZL1 Images
  • onsemi
  • onsemi P2N2222AZL1
  • Buy P2N2222AZL1
  • P2N2222AZL1 Price
  • P2N2222AZL1 Distributor
  • P2N2222AZL1 Supplier
  • P2N2222AZL1 Wholesale
Related Products
MMBT3906LT1G
MMBT3906LT1G

onsemi

MMBT3904-7-F
MMBT3904-7-F

Diodes Incorporated

MMBT3904LT1G
MMBT3904LT1G

onsemi

MMBT3906-7-F
MMBT3906-7-F

Diodes Incorporated

MMBT3904-TP
MMBT3904-TP

Micro Commercial Co

MMBT2222A-7-F
MMBT2222A-7-F

Diodes Incorporated

BC846BLT1G
BC846BLT1G

onsemi

BC847B,215
BC847B,215

Nexperia USA Inc.

SMMBT3904LT1G
SMMBT3904LT1G

onsemi

MMBT2222A-TP
MMBT2222A-TP

Micro Commercial Co

MMBTA06LT1G
MMBTA06LT1G

onsemi

MMBT2222ALT1G
MMBT2222ALT1G

onsemi

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER