onsemi P2N2222AZL1G

Overview

P2N2222AZL1G from onsemi is an NPN silicon bipolar junction transistor (BJT) designed for general-purpose amplification and switching in low-power analog and digital circuits. It delivers 600 mA continuous collector current, 40 V collector-emitter breakdown voltage, and 300 MHz current-gain bandwidth, commonly used in signal conditioning stages of sensor interfaces and discrete logic-level translators.

For engineers reviewing the P2N2222AZL1G datasheet, pinout, applications, or equivalent options, key selection criteria include DC current gain at 150 mA, V_CE(sat) under forced beta = 10, thermal resistance to ambient (200 °C/W), and Pb-free TO-92 package compliance with JEDEC J-STD-020 moisture sensitivity level 1.

Technical Context

The P2N2222AZL1G operates as a standard NPN BJT with base-controlled current amplification, supporting both linear amplification (h_FE = 75–300 at I_C = 10–150 mA) and saturated switching (V_CE(sat) ≤ 0.3 V at I_C = 150 mA, I_B = 15 mA). Its f_T = 300 MHz enables RF amplifier use up to ~100 MHz with proper biasing.

Thermal design requires attention to its R_JA = 200 °C/W (TO-92, free-air) and R_JC = 83.3 °C/W, limiting continuous power dissipation to 625 mW at T_A = 25°C - derated by 5 mW/°C above ambient. Junction temperature must remain within −55°C to +150°C for reliable operation.

Key Specifications

Pinout & Package

Package: TO-92 (Case 29-11, Style 17), Pb-free, through-hole mounting. Dimensions conform to JEDEC TO-226AA standard with 2.54 mm lead pitch.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN general-purpose transistor applications.

Compared with PN2222A and MPS2222A, the P2N2222AZL1G offers guaranteed Pb-free compliance and superior high-frequency response, making it the preferred choice for new RoHS-compliant designs requiring bandwidth headroom or strict environmental certification.

Availability

P2N2222AZL1G is available at Aetrix Electronics and suitable for audio preamplification, sensor signal conditioning, digital level translation, relay driving, and discrete logic interfacing requiring stable component supply and full RoHS compliance.

Supply support for P2N2222AZL1G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power management, analog, sensors, and connectivity solutions for automotive, industrial, and cloud infrastructure markets.

The P2N2222AZL1G belongs to onsemi's legacy general-purpose bipolar transistor product line, engineered for reliability, consistency, and broad compatibility in discrete amplifier and switching circuits across consumer, industrial, and computing applications.

FAQ

What is the maximum continuous collector current rating for the P2N2222AZL1G?

The P2N2222AZL1G has a maximum continuous collector current (I_C) rating of 600 mA at T_A = 25°C. This rating assumes adequate PCB copper area for heat dissipation; derating is required above ambient temperature per the 5 mW/°C thermal coefficient. At elevated temperatures or in confined enclosures, actual usable current may be limited by junction temperature constraints.

Is the P2N2222AZL1G RoHS-compliant and halogen-free?

Yes, the P2N2222AZL1G is fully RoHS-compliant and halogen-free, meeting EU Directive 2011/65/EU requirements. Its "G" suffix denotes Pb-free construction, verified per JEDEC J-STD-020 MSL Level 1, with no moisture sensitivity limitations or bake requirements prior to soldering.

What is the typical DC current gain (h_FE) of the P2N2222AZL1G at 10 mA collector current?

The P2N2222AZL1G exhibits a minimum h_FE of 75 and a maximum of 300 at I_C = 10 mA, V_CE = 10 V, and T_A = 25°C. This wide gain spread necessitates design margining - e.g., using worst-case h_FE = 75 for base resistor calculations in switching applications to ensure saturation across process variation.

Can the P2N2222AZL1G be used in RF amplifier circuits?

Yes, the P2N2222AZL1G supports RF amplification up to ~100 MHz due to its f_T = 300 MHz specification. It is commonly deployed in low-power IF amplifiers, oscillator buffers, and broadband preamps. Performance depends on stable biasing, proper impedance matching, and layout minimizing parasitic capacitance - especially given its C_obo = 8.0 pF and C_ibo = 25 pF.

What is the thermal resistance from junction to ambient (R_JA) for the P2N2222AZL1G in a standard TO-92 footprint?

The P2N2222AZL1G has a specified R_JA of 200 °C/W under free-air conditions with a standard TO-92 PCB footprint (no added copper pour). This value implies a 125°C junction rise for 625 mW dissipation - confirming its suitability for low-power analog and switching roles but requiring thermal analysis for sustained >300 mW operation.