onsemi P2N2907A

Overview

P2N2907A from onsemi is a PNP silicon bipolar junction transistor (BJT) designed for general-purpose amplification and switching in low-to-medium power circuits. It delivers −60 Vdc collector-emitter breakdown voltage, −600 mAdc continuous collector current, and 200 MHz current-gain bandwidth product (f_T), enabling reliable operation in discrete amplifier stages and digital logic interface circuits.

For engineers reviewing the P2N2907A datasheet, pinout, applications, or equivalent options, key selection considerations include its TO-92 package thermal resistance (R_JA = 200 °C/W), saturation voltage performance at −150 mAdc/−15 mAdc (V_CE(sat) = −0.4 Vdc), and guaranteed DC current gain (h_FE ≥ 75 at −0.1 mAdc).

Technical Context

The P2N2907A operates as a standard PNP BJT with fixed emitter-base and collector-base junctions optimized for linear amplification and saturated switching. Its f_T of 200 MHz and input capacitance (C_ibo ≤ 30 pF) support audio-frequency and low-speed digital signal handling without requiring external compensation.

Thermal design is constrained by R_JC = 83.3 °C/W and R_JA = 200 °C/W, limiting continuous power dissipation to 625 mW at 25°C ambient. The device exhibits stable h_FE across −55°C to +150°C junction temperature, with normalized gain variation under −1.0 Vdc and −10 Vdc V_CE bias conditions confirmed in typical curves.

Key Specifications

Pinout & Package

Package: TO-92 (Case 29-11, Style 17), molded plastic with axial leads; Pb-free option available (P2N2907AZL1G). Dimensions conform to ANSI Y14.5M-1982; collector lead is Pin 1, base is Pin 2, emitter is Pin 3.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP BJT amplification and switching applications.

Compared with MPSA92 and BC557, the P2N2907A uniquely balances −600 mAdc current capability, 200 MHz f_T, and −60 Vdc breakdown-making it the preferred choice for general-purpose medium-power PNP applications where both gain and speed matter.

Availability

P2N2907A is available at Aetrix Electronics and suitable for discrete amplifier design, logic-level translation, and power supply feedback circuits requiring stable component supply and long-term obsolescence management.

Supply support for P2N2907A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power, analog, sensing, and connectivity solutions for automotive, industrial, cloud, and consumer markets.

The P2N2907A belongs to onsemi's legacy discrete BJT portfolio, engineered for cost-sensitive, high-reliability general-purpose amplification and switching in industrial controls, power supplies, and analog signal conditioning systems.

FAQ

What is the maximum continuous collector current rating for the P2N2907A?

The P2N2907A has a maximum continuous collector current (I_C) rating of −600 mAdc at T_A = 25°C. Derating applies above 25°C at 5.0 mW/°C for ambient-limited operation or 12 mW/°C when case-mounted. This rating defines the highest DC load current the P2N2907A can safely conduct without exceeding thermal limits under specified cooling conditions.

Does the P2N2907A support Pb-free assembly processes?

Yes, the P2N2907A is available in Pb-free variants including P2N2907AZL1G and P2N2907AG, both compliant with RoHS Directive 2011/65/EU. These versions use matte tin plating and meet JEDEC J-STD-020D moisture sensitivity level (MSL) 1, supporting standard reflow profiles without special handling requirements for the P2N2907A.

What is the typical current-gain bandwidth product (f_T) of the P2N2907A?

The P2N2907A has a minimum f_T of 200 MHz, measured at I_C = −50 mAdc, V_CE = −20 Vdc, and f = 100 MHz. This value reflects the frequency at which the small-signal current gain |h_fe| extrapolates to unity, directly determining the usable bandwidth for amplification and high-speed switching applications involving the P2N2907A.

How is the pinout arranged on the P2N2907A TO-92 package?

The P2N2907A uses TO-92 (Style 17) pinout: Pin 1 is Collector, Pin 2 is Base, Pin 3 is Emitter-viewed with flat side facing outward and leads pointing down. This arrangement is standardized per onsemi's package drawing CASE 29-11 and must be observed to avoid reverse-bias damage or circuit malfunction when integrating the P2N2907A into PCB layouts.

What is the guaranteed DC current gain (h_FE) range for the P2N2907A at low current?

The P2N2907A guarantees h_FE ≥ 75 at I_C = −0.1 mAdc and V_CE = −10 Vdc. At higher currents (e.g., −10 mAdc), h_FE remains ≥ 100, and up to −150 mAdc it holds ≥ 100 before decreasing to ≥ 50 at −500 mAdc. This wide h_FE span allows flexible base-drive design across multiple operating points for the P2N2907A.