Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi P2N2907AZL1G

Name: P2N2907AZL1G
Brand: onsemi
SKU: P2N2907AZL1G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: P2N2907AZL1G

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-226-3, TO-92-3 Long Body, Formed Leads

Datasheet:: P2N2907AZL1G.pdf

Description:: TRANS PNP 60V 0.6A TO92

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:5,900

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

P2N2907AZL1G from onsemi is a PNP silicon bipolar junction transistor (BJT) designed for general-purpose amplification and switching in low-power analog and digital circuits. It features −60 V V_CEO, −600 mA I_C, 625 mW power dissipation at T_A = 25°C, 200 MHz f_T, and TO−92 package - commonly used in discrete logic inverters, LED drivers, and signal-level interface stages.

For engineers reviewing the P2N2907AZL1G datasheet, pinout, applications, or equivalent options, key selection criteria include verified V_CEO/I_C ratings, h_FE consistency across collector current range, saturation voltage under defined I_B/I_C conditions, thermal resistance (R_JA = 200°C/W), and Pb−free TO−92 tape-and-reel packaging compliance.

Technical Context

This PNP BJT operates with emitter-grounded configuration and supports linear amplification (h_FE = 75–300 at I_C = −0.1 to −150 mA) and saturated switching (V_CE(sat) ≤ −0.4 V at I_C = −150 mA, I_B = −15 mA). Its f_T = 200 MHz enables RF-capable small-signal use up to mid-VHF band.

Thermal design relies on R_JA = 200°C/W (ambient) and R_JC = 83.3°C/W (case), with rated junction temperature range of −55°C to +150°C. Cutoff leakage is tightly specified: I_CEO ≤ −10 nA, I_CBO ≤ −0.01 A at 150°C, supporting stable bias in temperature-varying environments.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	−60 Vdc - Maximum safe collector-emitter voltage before breakdown; defines rail compatibility in negative-supply circuits.
I_C (max)	−600 mAdc - Continuous collector current limit; sets upper bound for load-driving capability in switch mode.
h_FE	75–300 - DC current gain range across I_C = −0.1 to −150 mA; determines base drive requirements for gain-stable amplification.
V_CE(sat)	≤ −0.4 V at I_C = −150 mA, I_B = −15 mA - Low saturation voltage minimizes conduction loss in switching applications.
f_T	200 MHz - Unity-gain bandwidth; confirms suitability for audio amplification and low-MHz digital signal switching.
R_JA	200°C/W - Junction-to-ambient thermal resistance; informs heatsinking necessity in sealed enclosures or high ambient temperatures.
C_obo	≤ 8.0 pF - Output capacitance at V_CB = −10 V; impacts high-frequency stability and rise/fall time in switching waveforms.

Pinout & Package

Package: TO−92 (Case 29−11, Style 17), Pb−free, tape-and-reel (2000 units/reel).

Pin/Terminal	Circuit Role	Design Meaning
1	Collector	Main current sink terminal; connects to negative supply rail or load return path in PNP configurations.
2	Base	Control input; requires negative bias relative to emitter to turn on; governs I_C via h_FE-scaled I_B.
3	Emitter	Current source terminal; typically tied to positive supply or reference node; defines common point for bias network.

Key Features

Feature	Design Value
Pb−free TO−92 packaging	Complies with RoHS Directive 2011/65/EU; eliminates lead contamination risk in automated assembly and end-of-life recycling.
High f_T (200 MHz)	Enables clean square-wave switching up to ~30 MHz and stable small-signal amplification in audio and IF stages.
Low V_CE(sat) (−0.4 V)	Reduces power dissipation during saturation, improving efficiency in discrete logic gates and relay drivers.
Wide T_J range (−55°C to +150°C)	Supports operation in automotive under-hood, industrial control cabinets, and outdoor electronics without derating.
Controlled leakage (I_CEO ≤ −10 nA)	Ensures predictable cutoff behavior in battery-powered systems and precision bias networks over temperature.

Applications

Discrete Logic Inverter	LED Driver Stage
Use Scenario: Building non-inverting buffer or NOT gate using resistor-transistor logic (RTL) in legacy control panels. IC Role / Device Role / Timing Role: PNP switch configured with emitter at V_CC, collector driving grounded load; toggles output between rail and near-ground. Use Value: Delivers sharp transition with t_on ≤ 50 ns and t_off ≤ 110 ns, minimizing propagation delay in multi-stage RTL chains.	Use Scenario: Driving red/green indicator LEDs from microcontroller GPIO pins with open-collector or active-low outputs. IC Role / Device Role / Timing Role: Current-sinking switch placed between LED anode and V_CC, enabling direct control of common-anode displays. Use Value: Supports up to −600 mA continuous current, allowing parallel LED strings without external driver ICs.
Analog Signal Amplifier	Level Translator
Use Scenario: Amplifying sensor signals (e.g., thermistor bridge output) in single-supply instrumentation front-ends. IC Role / Device Role / Timing Role: Common-emitter amplifier with emitter degeneration resistor; provides voltage gain while maintaining DC bias stability. Use Value: h_FE ≥ 100 at I_C = −1.0 mA ensures predictable gain and low distortion at audio frequencies.	Use Scenario: Converting TTL/CMOS logic levels (0 V / +3.3 V) to RS-232 compatible voltages (0 V / −12 V) in legacy serial interfaces. IC Role / Device Role / Timing Role: Inverting level shifter with emitter at −12 V, collector pulled up to 0 V; generates negative logic swing. Use Value: V_CEO = −60 V safely accommodates RS-232's ±12 V signaling margin with headroom.

Discrete Logic Inverter

LED Driver Stage

Use Scenario: Building non-inverting buffer or NOT gate using resistor-transistor logic (RTL) in legacy control panels.

IC Role / Device Role / Timing Role: PNP switch configured with emitter at V_CC, collector driving grounded load; toggles output between rail and near-ground.

Use Value: Delivers sharp transition with t_on ≤ 50 ns and t_off ≤ 110 ns, minimizing propagation delay in multi-stage RTL chains.

Use Scenario: Driving red/green indicator LEDs from microcontroller GPIO pins with open-collector or active-low outputs.

IC Role / Device Role / Timing Role: Current-sinking switch placed between LED anode and V_CC, enabling direct control of common-anode displays.

Use Value: Supports up to −600 mA continuous current, allowing parallel LED strings without external driver ICs.

Analog Signal Amplifier

Level Translator

Use Scenario: Amplifying sensor signals (e.g., thermistor bridge output) in single-supply instrumentation front-ends.

IC Role / Device Role / Timing Role: Common-emitter amplifier with emitter degeneration resistor; provides voltage gain while maintaining DC bias stability.

Use Value: h_FE ≥ 100 at I_C = −1.0 mA ensures predictable gain and low distortion at audio frequencies.

Use Scenario: Converting TTL/CMOS logic levels (0 V / +3.3 V) to RS-232 compatible voltages (0 V / −12 V) in legacy serial interfaces.

IC Role / Device Role / Timing Role: Inverting level shifter with emitter at −12 V, collector pulled up to 0 V; generates negative logic swing.

Use Value: V_CEO = −60 V safely accommodates RS-232's ±12 V signaling margin with headroom.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP BJT switching and amplification applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MPSA92	V_CEO = −300 V, I_C = −500 mA, f_T = 50 MHz - higher voltage rating but lower bandwidth and gain uniformity.	Better suited for high-voltage flyback snubbers or relay coil suppression where speed is secondary.	Select MPSA92 only when >−60 V breakdown is required; not drop-in due to lower f_T and different h_FE profile.
BC557B	V_CEO = −45 V, I_C = −100 mA, h_FE = 200–450 - lower voltage/current rating but tighter h_FE binning and smaller footprint (TO-92 variant).	Ideal for low-current bias networks and portable device amplifiers where space and gain consistency matter more than power handling.	Choose BC557B for compact designs with <−100 mA loads; verify V_CEO margin in high-rail applications.

Compared with MPSA92 and BC557B, the P2N2907AZL1G offers balanced performance: sufficient −60 V/−600 mA rating for industrial controls, 200 MHz f_T for timing-critical switching, and proven thermal robustness in TO−92 - making it a versatile choice where reliability, availability, and moderate speed intersect.

Availability

P2N2907AZL1G is available at Aetrix Electronics and suitable for discrete logic inverters, LED driver stages, analog signal amplifiers, and level translators requiring stable component supply and Pb−free compliance.

Supply support for P2N2907AZL1G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier focused on energy-efficient innovation for automotive, industrial, cloud, medical, and IoT applications.

The P2N2907AZL1G belongs to onsemi's legacy general-purpose BJT product line, engineered for cost-sensitive, high-reliability discrete circuitry in power management, interface translation, and analog signal conditioning.

FAQ

What is the maximum collector-emitter voltage rating for P2N2907AZL1G?

The P2N2907AZL1G has a maximum collector-emitter voltage rating (V_CEO) of −60 Vdc, tested at I_C = −10 mA with base open. This rating defines its safe operating limit in negative-rail switching and amplification circuits. Exceeding this voltage risks avalanche breakdown. The P2N2907AZL1G maintains this rating across its full operating temperature range of −55°C to +150°C.

Does P2N2907AZL1G support Pb−free assembly processes?

Yes, the P2N2907AZL1G is explicitly designated as Pb−free per its part number suffix "G" and is packaged in a RoHS-compliant TO−92 case. It meets J-STD-020 moisture sensitivity level 1 and supports standard reflow profiles including peak temperatures up to 260°C. The P2N2907AZL1G datasheet confirms compatibility with lead-free soldering per onsemi's Soldering and Mounting Techniques Reference Manual.

What is the typical DC current gain (h_FE) of P2N2907AZL1G at 150 mA collector current?

At I_C = −150 mA and V_CE = −10 Vdc, the P2N2907AZL1G exhibits h_FE ranging from 100 to 300, with a typical value of 200. This gain range is confirmed in the official datasheet's Electrical Characteristics table and supports predictable base drive calculation for saturated switching. The P2N2907AZL1G maintains usable gain down to I_C = −0.1 mA, making it suitable for both switching and linear amplification roles.

Can P2N2907AZL1G be used in high-frequency switching applications?

Yes, the P2N2907AZL1G has a current-gain bandwidth product (f_T) of 200 MHz, enabling reliable operation in high-speed digital switching up to ~30 MHz. Measured turn-on time (t_on) is ≤ 50 ns and turn-off time (t_off) ≤ 110 ns under standard test conditions. The P2N2907AZL1G's C_obo ≤ 8.0 pF and C_ibo ≤ 30 pF further support fast edge rates without excessive ringing in properly terminated layouts.

What is the thermal resistance junction-to-ambient (R_JA) for P2N2907AZL1G in free-air conditions?

The P2N2907AZL1G has a thermal resistance junction-to-ambient (R_JA) of 200°C/W when mounted in still air on a standard FR-4 PCB with minimal copper area. This value assumes no heatsink and reflects worst-case convection-only cooling. For sustained operation near its 625 mW power limit, board layout must include adequate copper pour or forced airflow. The P2N2907AZL1G's R_JC = 83.3°C/W allows optional case-mount heatsinking if needed.

P2N2907AZL1G Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-226-3, TO-92-3 Long Body, Formed Leads

Packaging:: Tape & Box (TB)

Product Status:: Obsolete

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 600 mA

Voltage - Collector Emitter Breakdown (Max):: 60 V

Vce Saturation (Max) @ Ib, Ic:: 1.6V @ 50mA, 500mA

Current - Collector Cutoff (Max):: 10nA

DC Current Gain (hFE) (Min) @ Ic, Vce:: 100 @ 150mA, 10V

Power - Max:: 625 mW

Frequency - Transition:: 200MHz

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-92 (TO-226)

P2N2907AZL1G FAQ

1.How can I place an order for P2N2907AZL1G through Aetrix?

Please submit a Request for Quotation (RFQ) for P2N2907AZL1G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for P2N2907AZL1G reliable?

The price and inventory of P2N2907AZL1G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for P2N2907AZL1G is usually 5 days.

3.What payment methods are accepted for P2N2907AZL1G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for P2N2907AZL1G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for P2N2907AZL1G?

P2N2907AZL1G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your P2N2907AZL1G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for P2N2907AZL1G?

For technical support, including P2N2907AZL1G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your P2N2907AZL1G requirements.

6.How does Aetrix verify that P2N2907AZL1G is sourced from the original manufacturer or authorized distributors?

All P2N2907AZL1G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that P2N2907AZL1G meets industry standards.

7.What is the process for return or replacement of P2N2907AZL1G?

All P2N2907AZL1G units undergo pre-shipment inspection (PSI). If there is an issue with P2N2907AZL1G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The P2N2907AZL1G part is unused and in its original packaging.

Return procedure for P2N2907AZL1G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…