Nexperia USA Inc. PBHV3160Z-QX

Overview

PBHV3160Z-QX from Nexperia is a PNP high-voltage low-V_CEsat transistor in SOT223 (SC-73) package, rated for −600 V V_CEO, −0.1 A I_C, and −150 mV typical V_CEsat at I_C = −30 mA / I_B = −6 mA. It serves as a robust switching element in high-voltage DC-DC stages, automotive motor control, and LED chain drivers where low conduction loss and AEC-Q101 reliability are required.

For engineers reviewing the PBHV3160Z-QX datasheet, PBHV3160Z-QX pinout, PBHV3160Z-QX application, or PBHV3160Z-QX equivalent, key selection criteria include verified −600 V blocking capability, low −150 mV saturation voltage under automotive ambient conditions, dual-collector thermal design in SOT223, and AEC-Q101 qualification status for under-hood use.

Technical Context

This device implements a planar high-voltage PNP bipolar junction transistor structure optimized for stable gain (h_FE = 70–130 at −10 mA) and low saturation voltage across −55 °C to +150 °C. Its dual-collector configuration (Pins 2 & 4) enables enhanced thermal dissipation on FR4 PCBs with dedicated 6 cm² copper pad.

The transistor operates with −6 V V_EBO and exhibits low leakage: −100 nA I_CBO at −400 V and −10 µA at T_j = 150 °C. Its f_T of 38 MHz supports fast switching in SMPS and lighting ballast applications up to several hundred kHz.

Key Specifications

Pinout & Package

Package: SC-73 (SOT223), 4-lead surface-mount plastic package with extended heatsink area; body dimensions 6.5 mm × 3.5 mm × 1.65 mm; Pin 1 = Base, Pins 2 & 4 = Collector (internally connected), Pin 3 = Emitter.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage PNP switching applications.

Compared with PHPT60603PK and BCV61B,215, PBHV3160Z-QX uniquely combines −600 V rating, −150 mV V_CEsat, dual-collector thermal design, and AEC-Q101 qualification-making it the only drop-in solution for automotive-grade high-voltage PNP switching where base-drive simplicity and thermal robustness are critical.

Availability

PBHV3160Z-QX is available at Aetrix Electronics and suitable for electronic ballast, automotive motor management, and LED chain driver applications requiring stable component supply, long-term lifecycle support, and AEC-Q101-compliant sourcing.

Supply support for PBHV3160Z-QX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential system functionality, delivering high-performance, reliable discrete, logic, and MOSFET components.

PBHV3160Z-QX belongs to Nexperia's high-voltage bipolar transistor product line, engineered specifically for automotive and industrial switching applications demanding robustness, low saturation loss, and extended thermal performance.

FAQ

What is the maximum allowable junction temperature for PBHV3160Z-QX?

The absolute maximum junction temperature is 150 °C, as defined in the Limiting Values table. Operation above this threshold risks permanent degradation of h_FE and increased leakage. Derating curves in Figure 1 confirm 1.4 W total power dissipation is permissible only when the solder-point temperature remains ≤25 °C with a 6 cm² copper pad.

Is PBHV3160Z-QX pin-compatible with other SOT223 PNP transistors?

No-PBHV3160Z-QX uses a unique 4-pin SOT223 variant (SC-73) with two collector terminals (Pins 2 & 4), unlike standard 3-pin SOT223 devices. PCB footprint must accommodate four pads, including separate thermal land for Pin 4, per Figure 14 reflow soldering layout.

Does PBHV3160Z-QX require external base current limiting?

Yes-base current must be limited to prevent damage during saturation. At I_C = −30 mA, recommended I_B = −6 mA (I_C/I_B = 5); exceeding −10 mA risks excessive base-emitter power dissipation. A series resistor calculated from V_BEsat ≈ −0.95 V ensures safe drive.

How does the dual-collector configuration improve thermal performance?

Pins 2 and 4 connect to the same internal collector region and are designed for simultaneous soldering to large copper areas. This doubles the effective thermal interface area, reducing R_th(j-sp) to 20 K/W (vs. ~89 K/W with single-collector mounting), enabling 1.4 W dissipation on FR4 PCBs with proper layout.