Nexperia USA Inc. PBHV8115TLH-QR

Overview

PBHV8115TLH-QR from Nexperia is a 150 V, 1 A NPN high-voltage low-V_CEsat transistor in SOT23 package, designed for switching in automotive-grade power management and LED driver circuits. It delivers V_CEsat ≤ 350 mV at I_C = 1 A / I_B = 200 mA, supports 2 A peak collector current, and is qualified to AEC-Q101.

For engineers reviewing the PBHV8115TLH-QR datasheet, PBHV8115TLH-QR pinout, PBHV8115TLH-QR application, or PBHV8115TLH-QR equivalent, key selection criteria include its 150 V V_CEO, low saturation voltage under high-current drive, thermal resistance (R_th(j-a) = 417 K/W), and AEC-Q101 qualification for automotive reliability validation.

Technical Context

This NPN bipolar junction transistor operates as a high-voltage switch with V_CEO = 150 V and V_CBO = 400 V, enabling use in boost converters and LED string drivers where breakdown margin exceeds 120 V rail voltages. Its h_FE ranges from 10 to 300 (I_C = 10 mA–1 A), supporting both linear and saturated switching modes.

Switching performance is characterized by t_on = 575 ns and t_off = 2230 ns under 0.5 A load and ±0.1 A base drive, with f_T = 30 MHz confirming suitability for medium-frequency SMPS control. Thermal design relies on R_th(j-sp) = 70 K/W to solder point for PCB-level heat extraction.

Key Specifications

Pinout & Package

SOT23 plastic surface-mount package (2.9 mm × 1.3 mm × 1.0 mm body, 1.9 mm pin pitch); thermally optimized for single-sided FR4 PCBs with standard reflow footprint per Figure 14.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage NPN switching applications.

Compared with MMBT4401-7-F, PBHV8115TLH-QR offers 3.75× higher voltage rating and 53% lower conduction loss at 1 A; versus PBHV9115TLH-Q, it enables direct low-side switching without level-shifting, simplifying drive circuitry in SMPS and LED driver designs.

Availability

PBHV8115TLH-QR is available at Aetrix Electronics and suitable for automotive power management, LCD backlighting, LED chain module drivers, and Switch Mode Power Supply (SMPS) applications requiring stable component supply with AEC-Q101 compliance and long-term lifecycle support.

Supply support for PBHV8115TLH-QR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability essential semiconductors, with leadership in logic, discretes, and MOSFETs for automotive, industrial, and mobile markets.

PBHV8115TLH-QR belongs to Nexperia's AEC-Q101-qualified high-voltage bipolar transistor family, engineered specifically for robust switching in automotive power conversion and lighting systems where voltage margin and thermal stability are critical.

FAQ

Is PBHV8115TLH-QR suitable for high-frequency switching above 1 MHz?

No. Its transition frequency f_T is 30 MHz, but practical switching is limited by t_off = 2230 ns and stored charge effects. For >500 kHz operation, MOSFETs or RF-optimized transistors are recommended. This device targets 10–200 kHz SMPS and PWM dimming applications.

What is the maximum allowable base current for continuous operation?

The absolute maximum peak base current is 400 mA (single pulse, t_p ≤ 1 ms), but continuous base current must be limited to avoid thermal runaway. At I_C = 1 A, typical I_B = 200 mA yields safe V_CEsat; sustained base drive above 100 mA requires PCB copper pour and thermal vias to maintain T_j < 150 °C.

Does PBHV8115TLH-QR require a base resistor in all applications?

Yes. A series base resistor is mandatory to limit I_B and prevent damage from excessive base current. For I_C = 1 A and h_FE(min) = 10, minimum I_B = 100 mA; with 3.3 V MCU drive, R_B ≈ 27 Ω (1/4 W) ensures reliable saturation while limiting peak base power.

How does thermal derating affect usable current at 85 °C ambient?

At T_amb = 85 °C, P_tot derates to ~150 mW (per Fig. 1). With V_CEsat = 350 mV, maximum sustainable I_C drops to ~430 mA. For 1 A operation at elevated ambient, forced airflow or thermal vias under the SOT23 pad are required to maintain junction temperature below 150 °C.