Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Nexperia USA Inc. PBHV8115TLHR

Part No.:
PBHV8115TLHR
Manufacturer:
Nexperia USA Inc.
Category:
Single Bipolar Transistors
Package:
TO-236-3, SC-59, SOT-23-3
Datasheet:
AetrixPBHV8115TLHR.pdf
Description:
TRANS NPN 150V 1A TO-236AB
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:10,755

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

PBHV8115TLHR from Nexperia is a 150 V, 1 A NPN high-voltage low-VCEsat transistor in SOT23 package, designed for switching applications requiring high breakdown voltage and minimal conduction loss. It delivers VCEsat ≤ 350 mV at IC = 1 A / IB = 200 mA, hFE = 70–300 at IC = 50 mA, and supports peak current up to 2 A - used in LED chain drivers and SMPS primary-side switching.

For engineers reviewing the PBHV8115TLHR datasheet, PBHV8115TLHR pinout, PBHV8115TLHR application, or PBHV8115TLHR equivalent, key selection criteria include verified VCEO = 150 V rating, low saturation voltage under high-current pulsed conditions, thermal resistance Rth(j-sp) = 70 K/W, and SOT23 footprint compatibility with automated assembly.

Technical Context

This NPN bipolar junction transistor operates as a high-voltage saturated switch with guaranteed VCEO = 150 V and VCBO = 400 V, enabling use in 100–120 V DC bus or flyback clamp circuits. Its low VCEsat (≤350 mV) and high hFE (min 70 at 50 mA) reduce drive current demand and conduction losses in continuous and pulsed switching.

Thermal performance is defined for FR4 PCB mounting: Rth(j-a) = 417 K/W (free air), Rth(j-sp) = 70 K/W (solder point), supporting 300 mW Ptot at Tamb ≤ 25 °C. Switching parameters include ton = 575 ns and toff = 2230 ns under specified test conditions (VCC = 6 V, IC = 0.5 A).

Key Specifications

Parameter Value and Actual Design Meaning
VCEO 150 V - enables direct switching of 100–120 V DC rails without external snubbers
IC (continuous) 1 A - supports sustained load current in LED backlight and power management stages
VCEsat @ IC/IB = 1 A/200 mA ≤350 mV - reduces power dissipation to ≤350 mW during saturation, easing thermal design
hFE @ IC = 50 mA 70–300 - ensures reliable base drive margin across temperature and process variation
Rth(j-sp) 70 K/W - allows 2.1 °C rise per 30 mW at solder point, critical for compact SOT23 thermal layout
fT 30 MHz - sufficient for <1 MHz SMPS switching and LED dimming control bandwidth
toff 2230 ns - defines minimum off-time in high-frequency PWM operation with fixed dead time

Pinout & Package

SOT23 plastic surface-mounted package: 2.9 mm × 1.3 mm × 1.0 mm body, 1.9 mm lead pitch, single-sided copper FR4 mounting. Thermal pad not present; standard footprint per Fig. 14 (reflow) and Fig. 15 (wave).

Pin/Terminal Circuit Role Design Meaning
1 - B Base Control input requiring ≥200 mA peak drive for full saturation at 1 A collector current
2 - E Emitter Reference node for base drive and current return path; connected to ground or low-side return
3 - C Collector High-voltage switched output node; rated for 150 V DC and 200 V peak transient (VCESM)

Key Features

Feature Design Value
High-voltage blocking VCBO = 400 V provides margin against voltage spikes in inductive switching circuits
Low saturation voltage VCEsat ≤ 350 mV at IC = 1 A reduces conduction loss by >40% vs. standard 1 A transistors
Robust thermal interface Rth(j-sp) = 70 K/W enables direct thermal coupling to PCB copper, avoiding heatsinks in space-constrained designs
Wide operating temperature Tamb = −55 °C to +150 °C supports industrial and outdoor LED driver deployments
Fast turn-off capability toff = 2230 ns allows stable operation up to ~200 kHz PWM with controlled dead time

Applications

LED Chain Driver SMPS Primary-Side Switch

Use Scenario: Driving 3–5 white LEDs in series from 48–120 V DC supply with constant-current regulation.

IC Role / Device Role / Timing Role: Low-VCEsat NPN switch controlling LED current path in linear or PWM dimming configuration.

Use Value: 350 mV VCEsat limits power loss to 350 mW at 1 A, reducing thermal stress on SOT23 PCB land pattern.

Use Scenario: High-voltage switching in offline flyback or buck-derived converters operating from rectified AC mains.

IC Role / Device Role / Timing Role: Primary-side power switch handling 100–120 V DC bus with intermittent 2 A pulse current.

Use Value: 150 V VCEO and 200 V VCESM allow safe operation without clamping diodes in low-power (<5 W) adapters.

LCD Backlight Inverter Industrial Power Management

Use Scenario: Driving cold-cathode fluorescent lamp (CCFL) or edge-lit LED arrays in display power supplies.

IC Role / Device Role / Timing Role: High-voltage switch in resonant inverter half-bridge or boost stage.

Use Value: fT = 30 MHz and fast ton/toff support 50–200 kHz inverter frequencies with minimal switching loss.

Use Scenario: Overvoltage protection and load switching in programmable power supplies or PLC I/O modules.

IC Role / Device Role / Timing Role: High-reliability discrete switch interfacing microcontroller GPIO to 100 V loads.

Use Value: hFE ≥ 70 ensures logic-level drive compatibility with 3.3 V/5 V MCU outputs via simple resistor network.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage NPN switching applications.

Alternative Part Technical Difference Application Difference Selection Advice
ZTX653STZ VCEO = 120 V, VCEsat = 400 mV @ 1 A, hFE = 100–300, SOT23 Lower voltage rating limits use to ≤100 V systems; higher VCEsat increases conduction loss by ~14% Select when 120 V max is sufficient and tighter hFE distribution is required
BCX56-16,115 VCEO = 80 V, VCEsat = 500 mV @ 1 A, hFE = 100–250, SOT89 Lower voltage and higher saturation voltage; larger SOT89 package increases board area and thermal resistance Choose only if legacy SOT89 footprint must be retained and voltage requirements are ≤80 V

Compared with ZTX653STZ and BCX56-16,115, PBHV8115TLHR uniquely combines 150 V blocking, sub-350 mV saturation, and SOT23 size - enabling higher-voltage operation without package or thermal trade-offs.

Availability

PBHV8115TLHR is available at Aetrix Electronics and suitable for LCD backlighting, LED chain modules, and Switch Mode Power Supply (SMPS) designs requiring stable component supply, consistent parametric performance, and long-term production continuity.

Supply support for PBHV8115TLHR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive, industrial, and mobile markets.

PBHV8115TLHR belongs to Nexperia's high-voltage bipolar transistor product line, engineered specifically for energy-efficient switching in space-constrained power conversion and lighting applications.

FAQ

What is the maximum allowable base current for PBHV8115TLHR?

The absolute maximum peak base current is 400 mA (single pulse, tp ≤ 1 ms), per Table 5. For continuous operation, base current must be limited to ensure junction temperature remains ≤150 °C - typical design uses IB = 200 mA to achieve full saturation at IC = 1 A while maintaining safe thermal margin on FR4 PCB.

Can PBHV8115TLHR replace a MOSFET in low-frequency switching applications?

Yes, but only where gate drive simplicity and cost outweigh efficiency needs. PBHV8115TLHR requires significant base current (200 mA) versus MOSFET gate charge, increasing driver complexity. Its 350 mV VCEsat yields lower conduction loss than many small-signal MOSFETs above 10 V VDS, but switching loss is higher due to slower toff (2230 ns).

Is PBHV8115TLHR qualified for automotive applications?

No. Per Revision History (Table 8), PBHV8115TLHR v.3 explicitly states "non-automotive qualification." It lacks AEC-Q101 stress testing and automotive-grade screening. For automotive use, Nexperia offers the -Q qualified variant PBHV8115TLHQ, which undergoes extended temperature cycling and humidity testing.

How does thermal derating affect power handling on standard FR4?

Per Figure 1, Ptot drops linearly above 25 °C ambient: at 75 °C, derated power is ~150 mW; at 125 °C, it falls to ~30 mW. This reflects Rth(j-a) = 417 K/W. For sustained 1 A operation, PCB copper area and airflow must be optimized - or use pulsed operation below 2 A peak with duty cycle <2% to stay within thermal limits.

PBHV8115TLHR Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
-
Package/Case:
TO-236-3, SC-59, SOT-23-3
Packaging:
Tape & Reel (TR)
Product Status:
Active
Transistor Type:
NPN
Current - Collector (Ic) (Max):
1 A
Voltage - Collector Emitter Breakdown (Max):
150 V
Vce Saturation (Max) @ Ib, Ic:
60mV @ 10mA, 100mA
Current - Collector Cutoff (Max):
100nA
DC Current Gain (hFE) (Min) @ Ic, Vce:
70 @ 50mA, 10V
Power - Max:
-
Frequency - Transition:
30MHz
Operating Temperature:
150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
TO-236AB

PBHV8115TLHR FAQ

1.How can I place an order for PBHV8115TLHR through Aetrix?

Please submit a Request for Quotation (RFQ) for PBHV8115TLHR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PBHV8115TLHR reliable?

The price and inventory of PBHV8115TLHR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PBHV8115TLHR is usually 5 days.

3.What payment methods are accepted for PBHV8115TLHR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PBHV8115TLHR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PBHV8115TLHR?

PBHV8115TLHR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PBHV8115TLHR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PBHV8115TLHR?

For technical support, including PBHV8115TLHR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PBHV8115TLHR requirements.

6.How does Aetrix verify that PBHV8115TLHR is sourced from the original manufacturer or authorized distributors?

All PBHV8115TLHR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PBHV8115TLHR meets industry standards.

7.What is the process for return or replacement of PBHV8115TLHR?

All PBHV8115TLHR units undergo pre-shipment inspection (PSI). If there is an issue with PBHV8115TLHR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PBHV8115TLHR part is unused and in its original packaging.

Return procedure for PBHV8115TLHR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

PBHV8115TLHR Tags

  • PBHV8115TLHR
  • PBHV8115TLHR PDF
  • PBHV8115TLHR Datasheet
  • PBHV8115TLHR Specifications
  • PBHV8115TLHR Images
  • Nexperia USA Inc.
  • Nexperia USA Inc. PBHV8115TLHR
  • Buy PBHV8115TLHR
  • PBHV8115TLHR Price
  • PBHV8115TLHR Distributor
  • PBHV8115TLHR Supplier
  • PBHV8115TLHR Wholesale
Related Products
MMBT3906LT1G
MMBT3906LT1G

onsemi

MMBT3904-7-F
MMBT3904-7-F

Diodes Incorporated

MMBT3904LT1G
MMBT3904LT1G

onsemi

MMBT3906-7-F
MMBT3906-7-F

Diodes Incorporated

MMBT3904-TP
MMBT3904-TP

Micro Commercial Co

MMBT2222A-7-F
MMBT2222A-7-F

Diodes Incorporated

BC846BLT1G
BC846BLT1G

onsemi

BC847B,215
BC847B,215

Nexperia USA Inc.

SMMBT3904LT1G
SMMBT3904LT1G

onsemi

MMBT2222A-TP
MMBT2222A-TP

Micro Commercial Co

MMBTA06LT1G
MMBTA06LT1G

onsemi

MMBT2222ALT1G
MMBT2222ALT1G

onsemi

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER