Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Nexperia USA Inc. PBHV8140Z-QX

Part No.:
PBHV8140Z-QX
Manufacturer:
Nexperia USA Inc.
Category:
Single Bipolar Transistors
Package:
TO-261-4, TO-261AA
Datasheet:
AetrixPBHV8140Z-QX.pdf
Description:
TRANS NPN 400V 1A SOT-223
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,188

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

PBHV8140Z-QX from Nexperia is an AEC-Q101-qualified NPN high-voltage low-VCEsat transistor in SOT223 (SC-73) package, rated for 500 V VCESM, 1 A continuous IC, and 150–250 mV VCEsat at IC = 1 A / IB = 200 mA. It serves as a robust switching element in automotive LED drivers and SMPS primary-side control stages where high breakdown voltage and low conduction loss are critical.

For engineers reviewing the PBHV8140Z-QX datasheet, PBHV8140Z-QX pinout, PBHV8140Z-QX application, or PBHV8140Z-QX equivalent, this device is selected for high-voltage linear/switching roles requiring stable hFE > 100 at 50 mA, thermal resistance Rth(j-sp) = 15 K/W, and automotive-grade reliability under 150 °C junction operation.

Technical Context

This NPN bipolar junction transistor employs epitaxial base technology to achieve high VCEO = 400 V and VCESM = 500 V while maintaining low saturation voltage - VCEsat ≤ 250 mV at IC = 1 A and IB = 200 mA. Its hFE remains usable down to −55 °C and up to 100 °C, with typical gain of 155 at 50 mA and 20 at 1 A.

Thermal design leverages the SOT223's dual-collector leads (Pins 2 & 4) to deliver Rth(j-sp) = 15 K/W to solder point and Ptot = 1.45 W on 6 cm² copper pad. Switching performance includes ton = 2845 ns and toff = 3800 ns under defined test conditions (VCC = 6 V, IC = 0.5 A).

Key Specifications

Parameter Value and Actual Design Meaning
VCESM 500 V peak collector-emitter voltage - enables direct interface with 400 V DC bus in automotive SMPS and LED string supplies.
VCEsat 150–250 mV at IC = 1 A / IB = 200 mA - reduces conduction loss to ≤250 mW, critical for thermally constrained LED driver PCBs.
hFE 10–155 range across IC = 10 mA–1 A - supports both precision biasing (100+ at 50 mA) and high-current switching (20 at 1 A).
Rth(j-sp) 15 K/W - allows direct thermal coupling to PCB copper, enabling 1.45 W dissipation with minimal heatsink area.
toff 3800 ns - defines maximum practical switching frequency <100 kHz in hard-switched topologies without excessive losses.
ICM 2 A peak collector current - accommodates surge currents during motor startup or LED inrush in automotive modules.
VEBO 6 V emitter-base rating - constrains base drive circuitry to low-voltage logic-compatible levels, simplifying gate driver design.

Pinout & Package

SOT223 (SC-73) plastic surface-mount package with 4 leads, 2.3 mm pitch, and integrated heatsink pad (Pins 2 & 4 both connected to collector). Dimensions: 6.5 mm × 3.5 mm × 1.65 mm body; mounting pad for collector occupies 6 cm² on FR4 PCB.

Pin/Terminal Circuit Role Design Meaning
1 Base Control input; requires ≥200 mA peak drive for full saturation at 1 A collector current.
2 Collector Main high-voltage current path; electrically tied to Pin 4 for enhanced thermal and current handling.
3 Emitter Reference node for load return; connects to ground or low-side shunt in switch-mode configurations.
4 Collector Second collector terminal - must be soldered to large copper pour to achieve rated Ptot and Rth(j-sp).

Key Features

Feature Design Value
AEC-Q101 qualification Validated for automotive use per stress-test standard, supporting 15-year deployment in engine bay and cabin electronics.
Low VCEsat architecture 150–250 mV saturation voltage minimizes power loss and self-heating in constant-current LED drivers operating near 1 A.
Dual-collector thermal design Pins 2 and 4 both connect to collector, enabling 1.45 W total dissipation when mounted on 6 cm² copper - 2× standard SOT223 capability.
Wide temperature hFE stability hFE ≥ 80 at −55 °C and ≥ 35 at 100 °C ensures predictable turn-on behavior across automotive ambient ranges.
High VCEO/VCESM 400 V / 500 V ratings allow direct use in 350–400 V DC intermediate bus applications without series stacking or derating.

Applications

LED Chain Driver LCD Backlighting

Use Scenario: Constant-current driving of 10–15 white LEDs in series from 350–400 V DC supply in automotive instrument clusters.

IC Role / Device Role / Timing Role: High-voltage NPN switch controlling LED string current via PWM dimming at 1–10 kHz.

Use Value: Low VCEsat limits power loss to <250 mW, eliminating need for external heatsink on compact cluster PCBs.

Use Scenario: Boost converter primary-side switch powering CCFL or edge-lit LED arrays in automotive infotainment displays.

IC Role / Device Role / Timing Role: Hard-switched transistor in 50–100 kHz flyback or resonant topology, handling 1 A peak primary current.

Use Value: 500 V VCESM withstands reflected voltage spikes; dual-collector layout sustains 1.45 W dissipation during sustained backlight operation.

Automotive Motor Management Switch Mode Power Supply

Use Scenario: Low-side driver for 12 V brushed DC motors in HVAC actuators or seat positioners, interfacing with 5 V MCU GPIO.

IC Role / Device Role / Timing Role: Saturated switch delivering up to 1 A stall current with fast turn-off (<4 µs) to prevent MOSFET shoot-through in H-bridge designs.

Use Value: VBEsat = 0.95–1.1 V ensures reliable saturation with 5 V logic drive; hFE ≥ 20 at 1 A guarantees sufficient current gain margin.

Use Scenario: Primary-side switch in offline 12–24 W AC/DC adapter for telematics modules, operating from 85–265 V AC input.

IC Role / Device Role / Timing Role: Discrete BJT replacing MOSFET in cost-sensitive flyback converters where <100 kHz operation suffices.

Use Value: 400 V VCEO meets IEC 61000-4-5 surge requirements; Rth(j-sp) = 15 K/W enables compact transformer-isolated layout without thermal vias.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage NPN switching applications.

Alternative Part Technical Difference Application Difference Selection Advice
ON Semiconductor NSS12201LT1G 400 V VCEO, 1.5 A IC, 300–500 mV VCEsat, SOT23-3 package Limited to <250 mW dissipation; unsuitable for continuous 1 A loads without forced cooling Select only for space-constrained, low-duty-cycle signal switching - not for LED driver or SMPS primary-side use.
STMicroelectronics BUJ302A 1000 V VCEO, 2 A IC, 500–800 mV VCEsat, TO-220 package Higher VCEsat increases conduction loss by 2–3×; TO-220 requires heatsink even at 500 mA Prefer for ultra-high-voltage industrial SMPS (>600 V), but avoid in automotive LED modules due to thermal overhead.

Compared with NSS12201LT1G and BUJ302A, PBHV8140Z-QX uniquely balances 500 V capability, 250 mV VCEsat, and SOT223 thermal performance - enabling 1 A continuous operation on standard automotive PCBs without heatsinks or derating.

Availability

PBHV8140Z-QX is available at Aetrix Electronics and suitable for automotive LED driver modules, LCD backlight inverters, and 24 W SMPS designs requiring stable component supply with AEC-Q101 compliance and long-term lifecycle support.

Supply support for PBHV8140Z-QX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential semiconductors, delivering high-performance, reliable discrete and logic devices for automotive, industrial, and consumer markets.

PBHV8140Z-QX belongs to Nexperia's high-voltage bipolar transistor product line, engineered specifically for automotive lighting and power conversion where high breakdown voltage, low saturation loss, and AEC-Q101 reliability are mandatory.

FAQ

What is the maximum continuous collector current for PBHV8140Z-QX at 100 °C ambient?

At Tamb = 100 °C with standard footprint (Rth(j-a) = 170 K/W), the maximum continuous IC is derated to approximately 0.45 A to maintain Tj ≤ 150 °C. This is calculated using Ptot = (Tj − Tamb) / Rth(j-a) ≈ 0.29 W, then applying VCEsat = 200 mV → IC = √(Ptot / RCEsat) ≈ 0.45 A.

Can PBHV8140Z-QX replace a MOSFET in a 100 kHz flyback converter?

Yes, but with trade-offs: its 3800 ns toff limits practical efficiency above ~80 kHz due to increased switching loss. It delivers lower conduction loss than many 600 V MOSFETs below 1 A, but lacks inherent body diode recovery benefits. Use only in fixed-frequency, hard-switched topologies where gate drive simplicity outweighs frequency penalty.

Is the SOT223 footprint compatible with standard reflow profiles?

Yes - Nexperia specifies JEDEC J-STD-020-compliant reflow for PBHV8140Z-QX. Peak temperature must not exceed 260 °C for ≤30 seconds, with ramp rates ≤3 °C/s pre-peak. The dual-collector thermal pad requires full-solder coverage on 6 cm² copper to achieve rated Ptot; insufficient pad area causes premature thermal shutdown.

How does the PNP complement PBHV9540Z-Q differ electrically?

PBHV9540Z-Q shares identical VCEO = 400 V, VCESM = 500 V, and IC = 1 A ratings but exhibits higher VCEsat (300–450 mV) and lower hFE (60–120 typ.) due to PNP process asymmetry. Its complementary role is strictly for high-side switching or push-pull output stages - not drop-in replacement in NPN circuits.

PBHV8140Z-QX Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
-
Package/Case:
TO-261-4, TO-261AA
Packaging:
Tape & Reel (TR)
Product Status:
Active
Transistor Type:
NPN
Current - Collector (Ic) (Max):
1 A
Voltage - Collector Emitter Breakdown (Max):
400 V
Vce Saturation (Max) @ Ib, Ic:
250mV @ 200mA, 1A
Current - Collector Cutoff (Max):
100nA
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 50mA, 10V
Power - Max:
730 mW
Frequency - Transition:
25MHz
Operating Temperature:
150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-223

PBHV8140Z-QX FAQ

1.How can I place an order for PBHV8140Z-QX through Aetrix?

Please submit a Request for Quotation (RFQ) for PBHV8140Z-QX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PBHV8140Z-QX reliable?

The price and inventory of PBHV8140Z-QX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PBHV8140Z-QX is usually 5 days.

3.What payment methods are accepted for PBHV8140Z-QX?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PBHV8140Z-QX transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PBHV8140Z-QX?

PBHV8140Z-QX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PBHV8140Z-QX order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PBHV8140Z-QX?

For technical support, including PBHV8140Z-QX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PBHV8140Z-QX requirements.

6.How does Aetrix verify that PBHV8140Z-QX is sourced from the original manufacturer or authorized distributors?

All PBHV8140Z-QX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PBHV8140Z-QX meets industry standards.

7.What is the process for return or replacement of PBHV8140Z-QX?

All PBHV8140Z-QX units undergo pre-shipment inspection (PSI). If there is an issue with PBHV8140Z-QX, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PBHV8140Z-QX part is unused and in its original packaging.

Return procedure for PBHV8140Z-QX:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

PBHV8140Z-QX Tags

  • PBHV8140Z-QX
  • PBHV8140Z-QX PDF
  • PBHV8140Z-QX Datasheet
  • PBHV8140Z-QX Specifications
  • PBHV8140Z-QX Images
  • Nexperia USA Inc.
  • Nexperia USA Inc. PBHV8140Z-QX
  • Buy PBHV8140Z-QX
  • PBHV8140Z-QX Price
  • PBHV8140Z-QX Distributor
  • PBHV8140Z-QX Supplier
  • PBHV8140Z-QX Wholesale
Related Products
MMBT3906LT1G
MMBT3906LT1G

onsemi

MMBT3904-7-F
MMBT3904-7-F

Diodes Incorporated

MMBT3904LT1G
MMBT3904LT1G

onsemi

MMBT3906-7-F
MMBT3906-7-F

Diodes Incorporated

MMBT3904-TP
MMBT3904-TP

Micro Commercial Co

MMBT2222A-7-F
MMBT2222A-7-F

Diodes Incorporated

BC846BLT1G
BC846BLT1G

onsemi

BC847B,215
BC847B,215

Nexperia USA Inc.

SMMBT3904LT1G
SMMBT3904LT1G

onsemi

MMBT2222A-TP
MMBT2222A-TP

Micro Commercial Co

MMBTA06LT1G
MMBTA06LT1G

onsemi

MMBT2222ALT1G
MMBT2222ALT1G

onsemi

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER