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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

Nexperia USA Inc. PBHV8550XF

Name: PBHV8550XF
Brand: Nexperia USA Inc.
SKU: PBHV8550XF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PBHV8550XF

Manufacturer:: Nexperia USA Inc.

Category:: Single Bipolar Transistors

Package:: TO-243AA

Datasheet:: PBHV8550XF.pdf

Description:: TRANS NPN 500V 0.15A SOT-89

Quantity:: RFQ Add To RFQ list

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Inventory:2,408

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Product details

Overview

PBHV8550XF from Nexperia is an NPN high-voltage low-V_CEsat BISS transistor in SOT89 package, rated for 500 V V_CEO, 150 mA I_C, and 65 mV typical V_CEsat at I_C = 50 mA / I_B = 6 mA. It serves as a high-efficiency switching element in flyback converters and automotive motor management circuits where high breakdown voltage and low conduction loss are critical.

For engineers reviewing the PBHV8550XF datasheet, PBHV8550XF pinout, PBHV8550XF application, or PBHV8550XF equivalent, this device is selected for high-voltage DC-DC stages requiring AEC-Q101 qualification, stable h_FE > 50 up to 100 °C, and thermal resistance R_th(j-sp) = 20 K/W on FR4 with collector pad.

Technical Context

This BISS transistor uses a proprietary high-voltage epitaxial process enabling 500 V V_CEO while maintaining low saturation voltage (65 mV typ.) and high DC current gain (h_FE = 50–100 at I_C = 30 mA). Its structure supports fast switching with t_on = 2780 ns and t_off = 4200 ns under defined test conditions.

The device operates across −55 °C to 150 °C junction temperature, with thermal derating to 1.5 W at T_amb ≤ 25 °C on FR4 PCB with 6 cm² collector pad. It meets AEC-Q101 stress requirements for automotive discrete semiconductors, including HTOL, TC, and HTRB.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	500 V - Enables use in 400 V DC bus flyback and SMPS primary-side switching without derating.
I_C	150 mA continuous - Supports LED chain drivers and LCD backlighting loads up to 15 W at 100 V.
V_CEsat	65 mV typ. at I_C/I_B = 5 - Reduces conduction loss to <10 mW at 100 mA, improving efficiency in high-duty-cycle operation.
h_FE	50–100 at V_CE = 10 V, I_C = 30 mA - Ensures reliable base drive margin across industrial temperature range (−55 °C to 100 °C).
R_th(j-sp)	20 K/W - Enables direct thermal coupling to PCB copper, supporting compact layout in space-constrained LED driver modules.
f_T	35 MHz - Sufficient for switching frequencies up to 500 kHz in isolated DC-DC converters with controlled rise/fall times.
t_off	4200 ns - Matches timing requirements of automotive motor control PWM signals with <1% dead-time overhead.

Pinout & Package

SOT89 (SC-62) plastic surface-mount package: 4.5 mm × 2.5 mm × 1.5 mm body, 1.5 mm lead pitch, with exposed collector tab for thermal dissipation. Mounting requires 6 cm² copper area per JEDEC standard for full 1.5 W rating.

Pin/Terminal	Circuit Role	Design Meaning
1 (E)	Emitter	Reference node for base-emitter bias; connects to ground or low-side return path in high-side switch configurations.
2 (C)	Collector	Main high-voltage power terminal; electrically and thermally tied to PCB copper pour for heat extraction.
3 (B)	Base	Current-controlled input; requires ≥6 mA drive for full saturation at 50 mA collector load.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive motor management and lighting systems per stress test requirements (HTOL, TC, HTRB).
Low V_CEsat (65 mV typ.)	Reduces power dissipation by >40% vs. standard BJT at same I_C, extending thermal headroom in sealed LED modules.
High V_CEO (500 V)	Supports direct interface to 380 V rectified AC lines in electronic ballasts without external snubbers.
h_FE stability over temperature	Maintains h_FE ≥ 50 at 100 °C ambient, enabling simplified base drive design in under-hood applications.
Fast turn-off (t_off = 4200 ns)	Enables precise PWM control in 20–100 kHz motor commutation without shoot-through risk in half-bridge topologies.

Applications

Electronic Ballasts

LED Chain Driver

Use Scenario: High-frequency AC lamp ignition and regulation in fluorescent lighting systems.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch controlling resonant tank current in 20–50 kHz inverters.

Use Value: 500 V V_CEO withstands transient spikes during lamp strike; low V_CEsat minimizes heating in enclosed fixtures.

Use Scenario: Constant-current switching regulator for multi-string white LEDs in signage and architectural lighting.

IC Role / Device Role / Timing Role: Series-pass switch in buck-derived topology regulating up to 120 V string voltage.

Use Value: Stable h_FE ensures consistent current regulation across −40 °C to +85 °C ambient without feedback loop recalibration.

LCD Backlighting

Automotive Motor Management

Use Scenario: CCFL or high-brightness LED backlight in automotive infotainment displays.

IC Role / Device Role / Timing Role: High-side switch in boost converter driving 1–4 parallel LED strings at 30–60 V.

Use Value: AEC-Q101 qualification guarantees reliability under vibration, thermal cycling, and load dump conditions.

Use Scenario: Window lift, seat adjuster, or HVAC blower motor control in passenger vehicles.

IC Role / Device Role / Timing Role: Low-side driver in H-bridge half-bridge stage handling bidirectional 12 V/24 V motor current.

Use Value: 150 mA I_C rating supports gate drive for external MOSFETs; fast t_off enables 20 kHz PWM without audible noise.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage BJT switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
PHB10NQ03LT	N-channel 30 V MOSFET (not BJT); R_DS(on) = 12 mΩ; no gate current required.	Lower voltage rating limits use to 24 V systems; unsuitable for 400 V flyback primary side.	Select only for low-voltage (<30 V), high-frequency (>1 MHz) switching where gate drive simplicity outweighs voltage limitation.
BUJ302A	500 V NPN BJT; V_CEsat = 1.2 V typ. at I_C = 1 A; h_FE = 10–20; TO-126 package.	Higher V_CEsat increases conduction loss 18×; larger TO-126 footprint incompatible with SOT89 board space.	Choose only when higher I_C (1 A) is mandatory and thermal budget allows 1.2 V drop; not drop-in for space-constrained designs.

Compared with PHB10NQ03LT and BUJ302A, PBHV8550XF uniquely balances 500 V capability, 65 mV V_CEsat, SOT89 footprint, and AEC-Q101 compliance-making it optimal for compact, high-efficiency automotive and industrial HV switching where both voltage and thermal performance are constrained.

Availability

PBHV8550XF is available at Aetrix Electronics and suitable for electronic ballasts, LED chain drivers, and automotive motor management systems requiring stable component supply with AEC-Q101 assurance and tight V_CEsat tolerance.

Supply support for PBHV8550XF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential efficiency technologies, delivering high-performance, reliable discrete and logic devices for automotive, industrial, and consumer markets.

PBHV8550XF belongs to Nexperia's BISS transistor product line, engineered specifically for high-voltage, low-loss switching in space-constrained power conversion and automotive lighting applications.

FAQ

What is the maximum allowable base current for continuous operation?

The absolute maximum peak base current is 200 mA (single pulse, t_p ≤ 1 ms), but continuous operation must limit I_B to ensure junction temperature stays within 150 °C. At I_C = 150 mA and h_FE = 50, nominal I_B = 3 mA; sustained I_B > 10 mA requires thermal analysis with R_th(j-a) = 241 K/W on standard FR4.

Can PBHV8550XF replace a standard NPN transistor like BC817 in a 24 V SMPS?

No-it is not a drop-in replacement. PBHV8550XF has higher V_CEO (500 V vs. 45 V) and lower V_CEsat, but its h_FE profile and switching timing (t_off = 4200 ns) differ significantly. Using it in a 24 V design may cause overdrive or instability unless base drive and snubber networks are re-optimized.

Is the SOT89 package lead-free and RoHS compliant?

Yes. PBHV8550XF is manufactured with lead-free terminations and complies with RoHS Directive 2011/65/EU and REACH Regulation (EC) No. 1907/2006. The marking "C8" on the device body confirms this compliance per Nexperia's standard packaging protocol.

How does thermal performance change when mounted without the recommended 6 cm² collector pad?

Without the 6 cm² copper pad, R_th(j-sp) degrades from 20 K/W to 84 K/W (per Table 6), reducing maximum continuous power from 1.5 W to ~0.52 W at 25 °C ambient. Derating curves (Fig. 1) show usable power drops to 0.3 W at 75 °C ambient-insufficient for most LED driver or motor control loads.

PBHV8550XF Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: TO-243AA

Packaging:: Tape & Reel (TR)

Product Status:: Active

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 150 mA

Voltage - Collector Emitter Breakdown (Max):: 500 V

Vce Saturation (Max) @ Ib, Ic:: 90mV @ 6mA, 50mA

Current - Collector Cutoff (Max):: 100nA

DC Current Gain (hFE) (Min) @ Ic, Vce:: 50 @ 50mA, 10V

Power - Max:: 520 mW

Frequency - Transition:: 35MHz

Operating Temperature:: 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-89

PBHV8550XF FAQ

1.How can I place an order for PBHV8550XF through Aetrix?

Please submit a Request for Quotation (RFQ) for PBHV8550XF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PBHV8550XF reliable?

The price and inventory of PBHV8550XF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PBHV8550XF is usually 5 days.

3.What payment methods are accepted for PBHV8550XF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PBHV8550XF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PBHV8550XF?

PBHV8550XF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PBHV8550XF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PBHV8550XF?

For technical support, including PBHV8550XF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PBHV8550XF requirements.

6.How does Aetrix verify that PBHV8550XF is sourced from the original manufacturer or authorized distributors?

All PBHV8550XF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PBHV8550XF meets industry standards.

7.What is the process for return or replacement of PBHV8550XF?

All PBHV8550XF units undergo pre-shipment inspection (PSI). If there is an issue with PBHV8550XF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PBHV8550XF part is unused and in its original packaging.

Return procedure for PBHV8550XF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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