Nexperia USA Inc. PBHV8560Z-QX

Overview

PBHV8560Z-QX from Nexperia is an AEC-Q101-qualified NPN high-voltage bipolar transistor in SOT223 (SC-73) package, rated for 600 V V_CEO, 0.5 A I_C, and low 50 mV typical V_CEsat at I_C = 100 mA / I_B = 20 mA. It serves as a robust switching element in automotive motor management, HID front lighting, and SMPS primary-side control where high breakdown voltage and low conduction loss are critical.

For engineers reviewing the PBHV8560Z-QX datasheet, PBHV8560Z-QX pinout, PBHV8560Z-QX application, or PBHV8560Z-QX equivalent, this device is selected for high-voltage linear/switching operation requiring stable h_FE > 70 at 100 mA, junction temperature up to 150 °C, and thermal resistance R_th(j-sp) = 20 K/W on optimized PCB layout.

Technical Context

This transistor operates as a single NPN switch with open-base V_CEO = 600 V and peak V_CESM = 600 V under zero-bias conditions. Its DC current gain h_FE maintains 70–135 at V_CE = 10 V and I_C = 50 mA across −55 °C to 150 °C ambient range.

V_CEsat remains ≤100 mV at I_C = 100 mA / I_B = 20 mA (IC/IB = 5), and collector capacitance C_c is 7.5 pF at V_CB = 20 V, supporting fast switching in high-frequency SMPS and lighting ballasts.

Key Specifications

Pinout & Package

SOT223 (SC-73) plastic surface-mount package with 4 leads, 2.3 mm pitch, and integrated thermal pad on lead 2 and 4 (both collectors). Body dimensions: 6.5 mm × 3.5 mm × 1.65 mm. Mounting requires tin-plated FR4 PCB with ≥6 cm² copper area under collector pads for full power rating.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage NPN switching applications.

Compared with STN1050 and PHB10NQ03LT, PBHV8560Z-QX uniquely balances 600 V capability, ultra-low 50 mV saturation, and AEC-Q101 compliance in a thermally enhanced SOT223-making it optimal for automotive lighting and mid-power SMPS where bipolar drive simplicity and thermal efficiency are jointly critical.

Availability

PBHV8560Z-QX is available at Aetrix Electronics and suitable for electronic ballast, automotive motor management, and SMPS primary-side switching requiring stable component supply, AEC-Q101 validation, and thermal performance on standard FR4 PCBs.

Supply support for PBHV8560Z-QX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential efficiency technologies, delivering high-performance discrete, logic, and MOSFET solutions with emphasis on automotive, industrial, and mobile applications.

PBHV8560Z-QX belongs to Nexperia's high-voltage bipolar transistor product line, engineered specifically for automotive-grade switching in lighting, motor control, and power conversion where reliability at 150 °C junction temperature and low conduction loss are mandatory.

FAQ

Is PBHV8560Z-QX pin-compatible with PBHV9560Z-Q?

No. PBHV8560Z-QX is an NPN transistor while PBHV9560Z-Q is its PNP complement. They share identical SOT223 package and pinout (B-C-E-C), but polarity reversal means direct substitution would invert circuit function and likely cause failure. Use only as complementary pair in push-pull or H-bridge configurations with verified biasing.

What is the maximum allowable PCB copper area for the collector pad?

The datasheet specifies two mounting conditions: standard footprint (no extra copper) yields P_tot = 0.65 W, while a 6 cm² tin-plated copper pad under pins 2 and 4 enables P_tot = 1.4 W at T_amb ≤ 25 °C. Exceeding 6 cm² provides diminishing thermal returns and is not characterized; maintain minimum 0.3 mm solder mask clearance around the pad per Nexperia's reflow footprint guidelines.

Does PBHV8560Z-QX support pulsed operation above 0.5 A?

Yes. The datasheet confirms h_FE and V_CEsat are specified under pulsed conditions (tp ≤ 300 µs, duty cycle ≤ 0.02). At I_C = 100 mA pulsed, V_CEsat remains ≤100 mV. However, absolute maximum I_C remains 0.5 A - exceeding this even briefly risks secondary breakdown due to localized thermal runaway in the epitaxial layer.

Can PBHV8560Z-QX be used in linear regulator applications?

Yes, but with strict derating. Its low V_CEsat and high h_FE support quasi-linear operation in constant-current LED drivers and analog ballast control. However, power dissipation must stay within P_tot limits (1.4 W max with 6 cm² pad), and junction temperature must remain ≤150 °C. Avoid sustained operation near V_CEO and I_C limits simultaneously due to safe operating area (SOA) constraints.