Nexperia USA Inc. PBHV8560ZX

Overview

PBHV8560ZX from Nexperia is an NPN high-voltage bipolar junction transistor in SOT223 (SC-73) package, rated for 600 V V_CEO, 0.5 A continuous collector current, and low 50 mV typical V_CEsat at I_C = 100 mA / I_B = 20 mA. It serves as a robust switching element in high-voltage DC-DC stages and lighting control circuits where low conduction loss and thermal stability are critical.

For engineers reviewing the PBHV8560ZX datasheet, PBHV8560ZX pinout, PBHV8560ZX application, or PBHV8560ZX equivalent, this device is selected for high-voltage switching in LED drivers, electronic ballasts, and SMPS primary-side control where V_CE breakdown margin, saturation voltage consistency, and h_FE stability across temperature must be verified against load transient profiles and PCB thermal layout constraints.

Technical Context

This transistor uses a planar epitaxial process optimized for high-voltage blocking and low-saturation operation. Its 600 V V_CESM and 150 °C T_j rating enable reliable operation in flyback and resonant converter topologies with peak stress margins above 400 V. The dual-collector pin configuration (Pins 2 & 4) supports enhanced thermal dissipation via extended copper pour on FR4 PCBs.

h_FE remains ≥70 at I_C = 100 mA and 100 °C ambient, and V_CEsat stays ≤100 mV under pulsed conditions (δ ≤ 0.02, t_p ≤ 300 µs), confirming stable gain and low on-state resistance across industrial temperature range (−55 °C to +150 °C).

Key Specifications

Pinout & Package

SOT223 (SC-73) plastic surface-mount package with 4 leads, 2.3 mm pitch, 6.5 mm × 3.5 mm × 1.65 mm body, and integrated heatsink tab (Pin 2 & Pin 4 both connected to collector for thermal and electrical parallelism).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage NPN switching applications.

Compared with STN8560 and PHB13NQ06LT, PBHV8560ZX uniquely combines 600 V capability, SMT thermal scalability, and sub-100 mV saturation in a single discrete package - making it irreplaceable in compact, high-voltage, medium-current switching nodes without redesign.

Availability

PBHV8560ZX is available at Aetrix Electronics and suitable for electronic ballasts, LED chain drivers, and LCD backlighting systems requiring stable component supply with guaranteed long-term manufacturability and traceable sourcing.

Supply support for PBHV8560ZX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential system functionality, delivering high-performance, high-reliability discrete, logic, and MOSFET solutions for industrial, computing, and consumer markets.

PBHV8560ZX belongs to Nexperia's high-voltage bipolar transistor product line, engineered specifically for energy-efficient switching in lighting, power conversion, and telecom infrastructure where ruggedness and thermal predictability are mandatory.

FAQ

What is the maximum allowable base current for continuous operation?

The datasheet specifies I_C = 0.5 A absolute maximum, and typical drive uses I_B = 20 mA for I_C = 100 mA. For full 0.5 A conduction, base current must be ≥50 mA (I_C/I_B ≤ 10) while maintaining V_BEsat ≤ 950 mV. Exceeding 100 mA I_B risks bond wire overheating due to limited thermal path from Pin 1.

Can PBHV8560ZX replace PBHV9560Z in a circuit?

No - PBHV9560Z is the PNP complement, not a functional replacement. Swapping NPN for PNP reverses polarity, invalidates bias networks, and disrupts current flow direction. They are designed for complementary push-pull or H-bridge configurations, not interchangeability.

Is the SOT223 footprint compatible with JEDEC MS-012 (TO-261AA)?

Yes - SC-73 (SOT223) is identical to JEDEC TO-261AA in outline and land pattern. The 2.3 mm lead pitch, 6.5 mm × 3.5 mm body, and 4-pin configuration match exactly; existing TO-261AA footprints accept PBHV8560ZX without layout modification.

Does the device require a heatsink for 0.5 A DC operation?

Not a discrete heatsink - but mandatory 6 cm² copper pour on the PCB connected to Pins 2 and 4 is required. With that, R_th(j-a) drops to 89 K/W, limiting junction rise to ~63 °C at 0.5 A and 50 mV V_CEsat (25 mW loss), staying well below 150 °C T_j limit at 70 °C ambient.