Nexperia USA Inc. PBHV9560ZX

Overview

PBHV9560ZX from Nexperia is a PNP high-voltage bipolar junction transistor (BJT) designed for switching in high-voltage DC circuits, featuring −600 V V_CEO, −0.5 A I_C, −140 mV typical V_CEsat at I_C = −100 mA / I_B = −20 mA, and 90 minimum h_FE at high current. It operates in electronic ballasts, LED chain drivers, and SMPS primary-side switching where low conduction loss and robust voltage blocking are required.

For engineers reviewing the PBHV9560ZX datasheet, PBHV9560ZX pinout, PBHV9560ZX application, or PBHV9560ZX equivalent, this device is selected for high-voltage PNP switching with verified thermal performance on FR4 PCBs, confirmed SOT223-4 package pin mapping, and documented low V_CEsat behavior across temperature and drive conditions.

Technical Context

This transistor uses a planar epitaxial process optimized for high-voltage breakdown and low saturation voltage under moderate current. Its structure supports stable h_FE > 50 up to I_C = −100 mA with pulsed base drive, and exhibits <12 pF collector capacitance at V_CB = −20 V - enabling use in 100 kHz–500 kHz switching topologies.

Thermal design relies on its dual-collector SOT223-4 footprint: R_th(j-sp) = 20 K/W with 6 cm² copper pad enables 1.4 W continuous dissipation, while R_th(j-a) = 89 K/W under optimized mounting ensures reliable operation up to T_amb = 100 °C in enclosed power supplies.

Key Specifications

Pinout & Package

Package: SOT223-4 (SC-73), plastic surface-mount with two collector terminals (Pins 2 and 4) for enhanced thermal and current handling. Body dimensions: 6.5 mm × 3.5 mm × 1.65 mm; lead pitch: 2.3 mm.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage PNP switching applications.

Compared with PHV9560Z, PBHV9560ZX guarantees updated non-automotive qualification and full v.2 datasheet alignment; versus PBHV9540Z, it delivers 50% higher voltage margin and 44% lower conduction loss at rated current - directly enabling smaller heatsinks and higher power density.

Availability

PBHV9560ZX is available at Aetrix Electronics and suitable for electronic ballasts, LED chain drivers, and switch-mode power supplies requiring stable component supply, consistent parametric performance across production lots, and long-term obsolescence management.

Supply support for PBHV9560ZX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert delivering high-performance, reliable discrete, logic, and MOSFET devices with focus on efficiency, miniaturization, and robustness for industrial and consumer power applications.

PBHV9560ZX belongs to Nexperia's high-voltage bipolar transistor family, engineered specifically for energy-efficient switching in lighting, power conversion, and telecom infrastructure where voltage resilience and low-loss operation are critical.

FAQ

What is the maximum safe operating voltage for PBHV9560ZX in continuous DC blocking?

The absolute maximum V_CEO is −600 V with open base, and V_CESM is also −600 V with V_BE = 0 V. For reliable long-term operation, design to ≤80% of this rating (≤−480 V) under worst-case transient conditions per IEC 61000-4-5 surge testing. Derating is mandatory for elevated ambient temperatures above 70 °C.

Can PBHV9560ZX replace a TO-92 PNP transistor in an existing 230 VAC-powered ballast design?

Yes - but only if the PCB layout accommodates SOT223-4 footprint and thermal copper area. The dual-collector configuration requires re-routing both collector pads to a shared 6 cm² thermal pad. Electrical replacement is direct (same pin 1–3 function), but thermal validation is required due to higher power density than TO-92.

Is PBHV9560ZX qualified for automotive applications?

No. Per Nexperia's October 2024 revision history, PBHV9560ZX is explicitly designated as non-automotive qualified. It lacks AEC-Q101 stress testing and automotive-grade traceability. For automotive use, consult Nexperia's PBHV9560Z-Q series, which carries separate qualification and part numbering.

What base drive current is required to achieve full saturation at I_C = −0.5 A?

At I_C = −0.5 A, h_FE drops to ~25 (per Fig. 4 extrapolation), requiring ≥20 mA I_B for hard saturation. However, datasheet test conditions specify I_B = −20 mA only up to I_C = −100 mA. For 500 mA, use I_B ≥ −25 mA with 10% safety margin and verify V_CEsat < −200 mV in prototype testing.