NXP Semiconductors PBRN113EK,115
- Part No.:
- PBRN113EK,115
- Manufacturer:
- NXP Semiconductors
- Category:
- Single, Pre-Biased Bipolar Transistors
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
PBRN113EK,115.pdf
- Description:
- TRANS PREBIAS NPN 40V 0.6A SMT3
- Quantity:
- Payment:

- Shipping:

Inventory:6,725
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
PBRN113EK,115 from Nexperia is an NPN resistor-equipped transistor (RET) in SOT346 (SC-59A/TO-236) package, designed for medium-current switching with 40 V VCEO, 600 mA continuous output current, and low 35 mV typical VCEsat at 50 mA. It integrates R1 = 1 kΩ and R2 = 1 kΩ bias resistors with ±10 % ratio tolerance, enabling direct digital logic interface in automotive and industrial load control circuits.
For engineers reviewing the PBRN113EK,115 datasheet, PBRN113EK,115 pinout, PBRN113EK,115 application, or PBRN113EK,115 equivalent, key selection criteria include its 600 mA DC output rating, 1 kΩ input bias resistor value, SOT346 thermal resistance of 500 K/W (FR4 standard footprint), and verified use in peripheral driver and LED load switching roles.
Technical Context
The PBRN113EK,115 implements a Breakthrough In Small Signal (BISS) NPN structure with monolithically integrated base bias network (R1 and R2) to eliminate external resistors. Its design targets simplified digital-to-analog interface where logic-level inputs directly drive switched loads without discrete base biasing.
It operates with VCE ≤ 40 V and supports IO up to 600 mA under continuous DC conditions on FR4 PCBs, with peak pulsed capability of 800 mA (tp ≤ 1 ms). The 25–35 mV typical VCEsat at low currents enables high-efficiency switching in space-constrained applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 40 V - Maximum collector-emitter voltage before breakdown; defines safe operating range for 24 V and 36 V system loads. |
| IO (DC) | 600 mA - Continuous output current rating on FR4 PCB with standard footprint; sets maximum steady-state load capacity. |
| VCEsat (typ) | 25 mV @ 50 mA / 2.5 mA - Ultra-low saturation voltage minimizes conduction loss and self-heating in logic-driven switches. |
| R1 | 1 kΩ (0.7–1.3 kΩ) - Integrated input bias resistor enables direct connection to 3.3 V or 5 V CMOS/TTL outputs without external components. |
| R2/R1 | 1.0 ±0.1 - Precise resistor ratio ensures stable current gain and predictable turn-on threshold across temperature. |
| hFE (min) | 40 @ 50 mA - Minimum DC current gain guarantees reliable saturation under worst-case drive conditions. |
| Ptot (max) | 250 mW @ Tamb ≤ 25 °C - Power dissipation limit on standard FR4 board; determines thermal derating requirements. |
Pinout & Package
SOT346 (SC-59A/TO-236) surface-mount plastic package with 3 leads, 1.3 mm max height, and 2.5 × 1.7 mm body footprint. Optimized for reflow soldering per JEDEC J-STD-020.
| Pin | Circuit Role | Design Meaning |
|---|---|---|
| 1 | input (base) | Connected internally to R1; accepts logic-level voltage (0–10 V) to control transistor switching state. |
| 2 | GND (emitter) | Common reference node; ties emitter to ground plane and serves as return path for base and load currents. |
| 3 | output (collector) | Switched high-side output node; connects to load (e.g., relay coil, LED string) with 600 mA DC capability. |
Key Features
| Feature | Design Value |
|---|---|
| Integrated bias network | R1 = 1 kΩ + R2 = 1 kΩ eliminates two external resistors, reducing BOM count and PCB area by ≥3 mm². |
| Low VCEsat | 25 mV typical at 50 mA enables <15 mW conduction loss, critical for thermally constrained modules. |
| ±10 % R2/R1 tolerance | Ensures consistent IC/IB ratio across production lots, minimizing variation in switching thresholds. |
| 800 mA pulsed capability | Supports short-duration inrush or surge loads (e.g., solenoid pull-in) without device failure. |
| JEDEC TO-236 compatible | Enables drop-in replacement in legacy designs using standard SOT23/SOT346 footprints and assembly processes. |
Applications
| Automotive Body Control Module | Industrial PLC Output Stage |
|---|---|
Use Scenario: Driving 12 V incandescent lamps and small relays in door module and lighting control units. IC Role / Device Role / Timing Role: Medium-current NPN switch translating microcontroller GPIO signals into load current paths. Use Value: 600 mA DC rating and 40 V VCEO safely handle automotive load transients while low VCEsat reduces heat generation in sealed enclosures. |
Use Scenario: Isolating and amplifying digital outputs from programmable logic controllers to drive 24 V solenoids and indicator LEDs. IC Role / Device Role / Timing Role: Logic-compatible RET providing galvanic separation between controller IC and field-side loads. Use Value: Integrated R1/R2 eliminates external biasing, cutting component count and improving long-term reliability in vibration-prone environments. |
| Consumer Appliance Motor Driver | Smart Home Sensor Interface |
Use Scenario: Controlling small DC fan motors and buzzer actuators in HVAC and kitchen appliances. IC Role / Device Role / Timing Role: Low-power switching element activated by MCU PWM or on/off signals. Use Value: 25 mV typical VCEsat limits power loss to <15 mW at 600 mA, allowing operation without heatsinking in compact plastic housings. |
Use Scenario: Enabling/disabling sensor supply rails and signal conditioning stages in battery-powered IoT nodes. IC Role / Device Role / Timing Role: Load switch managing power delivery to analog front-end circuitry based on wake-up events. Use Value: 1 kΩ R1 allows direct 3.3 V MCU drive with <3.3 mA base current, extending battery life versus discrete BJT + resistor solutions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar NPN resistor-equipped transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| NSV11301T1G | Higher VCEO (50 V), lower IO (500 mA), R1 = 2.2 kΩ, R2 = 47 kΩ - different bias ratio and lower current capability. | More suitable for higher-voltage but lower-current sensing interfaces than load switching. | Select when >40 V system margin is required and load current stays below 500 mA. |
| MMBT3904LT1G | No integrated resistors; requires external RB; higher VCEO (40 V), same package, but hFE min = 100 - discrete solution with higher gain but added components. | Used where precise base current control or variable gain is needed, not for fixed-ratio logic interface. | Choose only if design requires adjustable base drive or higher hFE stability across temperature. |
Compared with NSV11301T1G and MMBT3904LT1G, the PBRN113EK,115 delivers optimal balance of 600 mA drive strength, ultra-low 25 mV VCEsat, and matched 1 kΩ/1 kΩ bias network - making it uniquely suited for cost-sensitive, space-constrained digital load switching where minimal external components are mandatory.
Availability
PBRN113EK,115 is available at Aetrix Electronics and suitable for automotive body electronics, industrial PLC output stages, and consumer appliance motor control requiring stable component supply and long-lifecycle support.
Supply support for PBRN113EK,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on essential efficiency technologies, delivering high-performance, reliable discrete, logic, and MOSFET devices for automotive, industrial, and consumer markets.
The PBRN113EK,115 belongs to Nexperia's BISS RET family, engineered specifically for replacing discrete BJT + resistor combinations in digital switching applications where board space, assembly cost, and design simplicity are critical.
FAQ
What is the maximum continuous output current rating for PBRN113EK,115?
The PBRN113EK,115 has a maximum continuous output current (IO) of 600 mA when mounted on an FR4 PCB with standard footprint and ambient temperature ≤25 °C. This rating drops with increasing temperature per the published derating curve, reaching zero at 125 °C ambient. The 600 mA value is confirmed in Table 2 and Table 6 of the Nexperia datasheet.
Does PBRN113EK,115 have built-in bias resistors, and what are their values?
Yes, the PBRN113EK,115 integrates two bias resistors: R1 = 1 kΩ (input resistor) and R2 = 1 kΩ (base-emitter resistor), with R2/R1 ratio tightly controlled at 1.0 ±0.1. These values are specified in Table 2 (Quick Reference Data) and Table 8 (Characteristics), enabling direct logic-level drive without external components.
What is the typical collector-emitter saturation voltage (VCEsat) for PBRN113EK,115 at 50 mA collector current?
The typical VCEsat for PBRN113EK,115 is 25 mV at IC = 50 mA and IB = 2.5 mA, as stated in Table 8 of the datasheet. This ultra-low saturation voltage reduces conduction losses and thermal stress, especially important in high-density or thermally limited PCB layouts.
Which package does PBRN113EK,115 use, and is it compatible with standard SOT23 footprints?
The PBRN113EK,115 uses the SOT346 (SC-59A/TO-236) package, which shares mechanical compatibility with SOT23 but has distinct pinout (1=base, 2=emitter, 3=collector). While footprint dimensions overlap, the pin assignment differs - SOT23 variants use 1=emitter, 2=base, 3=collector - so PCB layout must match SOT346-specific land patterns shown in Figure 18 of the datasheet.
Can PBRN113EK,115 be used in automotive applications, and what qualifications support this?
Yes, the PBRN113EK,115 is qualified for automotive body electronics per its inclusion in Nexperia's AEC-Q101-qualified BISS RET portfolio and documented use in automotive segments (Section 1.3 Applications). Its 150 °C junction temperature rating, −65 °C to +150 °C operating range, and robust thermal performance on FR4 PCBs meet typical under-hood environmental requirements.
PBRN113EK,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Transistor Type:
- NPN - Pre-Biased
- Current - Collector (Ic) (Max):
- 600 mA
- Voltage - Collector Emitter Breakdown (Max):
- 40 V
- Resistor - Base (R1):
- 1 kOhms
- Resistor - Emitter Base (R2):
- 1 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 180 @ 300mA, 5V
- Vce Saturation (Max) @ Ib, Ic:
- 1.15V @ 8mA, 800mA
- Current - Collector Cutoff (Max):
- 500nA
- Frequency - Transition:
- -
- Power - Max:
- 250 mW
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SMT3; MPAK
PBRN113EK,115 FAQ
1.How can I place an order for PBRN113EK,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for PBRN113EK,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PBRN113EK,115 reliable?
The price and inventory of PBRN113EK,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PBRN113EK,115 is usually 5 days.
3.What payment methods are accepted for PBRN113EK,115?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PBRN113EK,115 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PBRN113EK,115?
PBRN113EK,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PBRN113EK,115 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PBRN113EK,115?
For technical support, including PBRN113EK,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PBRN113EK,115 requirements.
6.How does Aetrix verify that PBRN113EK,115 is sourced from the original manufacturer or authorized distributors?
All PBRN113EK,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PBRN113EK,115 meets industry standards.
7.What is the process for return or replacement of PBRN113EK,115?
All PBRN113EK,115 units undergo pre-shipment inspection (PSI). If there is an issue with PBRN113EK,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PBRN113EK,115 part is unused and in its original packaging.
Return procedure for PBRN113EK,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
PBRN113EK,115 Tags

-
MUN5211T1G
onsemi

-
DTC043ZEBTL
Rohm Semiconductor

-
DTC114EKAT146
Rohm Semiconductor

-
DDTD113ZC-7-F
Diodes Incorporated

-
DRDNB16W-7
Diodes Incorporated

-
PDTC114ET,215
Nexperia USA Inc.

-
PDTC143ZT,215
Nexperia USA Inc.

-
PDTC143ET,215
Nexperia USA Inc.

-
PDTC143XT,215
Nexperia USA Inc.

-
MMUN2211LT1G
onsemi

-
PDTC144ET,215
Nexperia USA Inc.

-
PDTC124ET,215
Nexperia USA Inc.
Tech Hub
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
