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NXP Semiconductors PBRN113ZK,115
- Part No.:
- PBRN113ZK,115
- Manufacturer:
- NXP Semiconductors
- Category:
- Single, Pre-Biased Bipolar Transistors
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
PBRN113ZK,115.pdf
- Description:
- TRANS PREBIAS NPN 40V 0.6A SMT3
- Quantity:
- Payment:
- Shipping:
Inventory:3,485
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Product details
Overview
PBRN113ZK,115 from Nexperia is an NPN resistor-equipped transistor (RET) in SOT346 (SC-59A/TO-236) package, designed for medium-current switching with 40 V VCEO, 600 mA continuous output current, and low 25 mV typical VCEsat at 50 mA/2.5 mA drive-used in automotive load control and industrial peripheral drivers.
For engineers reviewing the PBRN113ZK,115 datasheet, PBRN113ZK,115 pinout, PBRN113ZK,115 application, or PBRN113ZK,115 equivalent, key selection criteria include built-in bias resistors (R1 = 1 kΩ, R2/R1 = 10), ±10% resistor ratio tolerance, thermal resistance of 500 K/W on FR4 PCB, and compatibility with reflow soldering per JEDEC J-STD-020.
Technical Context
This BISS (Breakthrough In Small Signal) RET integrates two precision bias resistors-R1 (1 kΩ input resistor) and R2 (10 kΩ base-emitter feedback resistor)-to eliminate external components while maintaining stable DC current gain (hFE = 450 typ. at 50 mA). Its low VCEsat enables high-efficiency switching in space-constrained applications.
The device operates across −65 °C to +150 °C ambient temperature, supports repetitive peak output current up to 800 mA (tp ≤1 ms), and features 7 pF collector capacitance for fast switching response. It complies with IEC 60134 absolute maximum ratings and is qualified for automotive and industrial use.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 40 V - Maximum safe collector-emitter voltage with open base; defines upper rail limit in switching circuits. |
| IO (continuous) | 600 mA - Rated DC output current; sufficient for driving relays, LEDs, and small solenoids without heatsinking. |
| VCEsat (typ.) | 25 mV @ IC = 50 mA, IB = 2.5 mA - Enables <0.00125 W conduction loss at 50 mA, minimizing self-heating. |
| R1 / R2/R1 | 1 kΩ / 10 - Fixed internal bias network eliminates external resistors; ±10% ratio tolerance ensures consistent turn-on behavior. |
| Rth(j-a) | 500 K/W - Thermal resistance on FR4 PCB; dictates derating above 25 °C ambient (e.g., 125 mW max at 75 °C). |
| hFE (min) | 300 @ IC = 50 mA - Ensures reliable saturation with low base drive, reducing MCU GPIO loading. |
| Cc | 7 pF - Low collector capacitance supports >100 MHz switching transitions in digital interface applications. |
Pinout & Package
SOT346 (SC-59A/TO-236) surface-mount plastic package: 3-lead, 1.3 mm × 2.5 mm footprint, 0.95 mm height, compatible with standard 4 mm pitch tape-and-reel handling (packing code -115).
| Pin | Circuit Role | Design Meaning |
|---|---|---|
| 1 | input (base) | Connected internally to R1; accepts logic-level drive (VI(on) = 0.7 V typ.) without external base resistor. |
| 2 | GND (emitter) | Common reference node; ties emitter directly to ground plane-critical for stable bias and noise immunity. |
| 3 | output (collector) | Switched high-side load connection; rated for 40 V and 600 mA DC, with 800 mA pulsed capability. |
Key Features
| Feature | Design Value |
|---|---|
| Integrated bias network | R1 = 1 kΩ, R2/R1 = 10 - Reduces bill-of-materials count by eliminating two external resistors and associated layout area. |
| Low VCEsat | 25 mV typ. @ 50 mA - Cuts power dissipation by >80% vs. standard small-signal transistors, enabling higher density designs. |
| High hFE | 450 typ. @ 50 mA - Allows direct drive from 3.3 V or 5 V microcontrollers without additional amplification stages. |
| Automotive-grade reliability | −65 °C to +150 °C operating range - Qualified for under-hood and engine-control module environments per AEC-Q101 stress tests. |
| Reflow-compatible footprint | JEDEC-standard SOT346 land pattern - Supports automated assembly using IPC-7351B Class B guidelines and J-STD-020 profile. |
Applications
| Automotive Load Switching | Industrial Peripheral Driver |
|---|---|
Use Scenario: Controlling 12 V fuel pump relay or HVAC blower motor in passenger vehicle ECUs. IC Role / Device Role / Timing Role: Medium-current NPN switch with integrated biasing, replacing discrete BJT + two resistors. Use Value: Eliminates 2 passives and reduces PCB area by 3.5 mm²; VCEsat < 35 mV limits relay coil heating at 500 mA. |
Use Scenario: Driving optocoupler inputs or stepper motor phase enable lines in PLC I/O modules. IC Role / Device Role / Timing Role: Logic-level-controlled current sink for isolated signal conditioning interfaces. Use Value: VI(on) = 0.7 V typ. ensures clean turn-on from 3.3 V FPGA outputs; hFE ≥ 300 guarantees margin at 200 mA loads. |
| LED Array Control | Power Supply Sequencing |
Use Scenario: Switching 24 V LED strings in commercial lighting fixtures with PWM dimming. IC Role / Device Role / Timing Role: High-gain, low-saturation switch enabling efficient constant-current sink operation. Use Value: 7 pF Cc supports 20 kHz PWM without rise/fall time degradation; R1/R2 ratio stability maintains dimming linearity. |
Use Scenario: Enabling 5 V auxiliary rails after main 12 V supply stabilizes in embedded power management systems. IC Role / Device Role / Timing Role: Delayed-enable switch triggered by supervisor IC output. Use Value: VI(off) = 0.5 V max prevents false turn-on during brown-out; Tj ≤ 150 °C ensures reliability during thermal cycling. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar NPN resistor-equipped transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| NSV113ZK,115 | Same SOT346 package, identical R1/R2 values, but optimized for AEC-Q101 Grade 0 (−40 °C to +150 °C) with tighter hFE min spec (350 vs. 300). | Better suited for extended-temperature automotive modules where statistical hFE margin is critical. | Select NSV113ZK,115 when qualifying for full AEC-Q101 Grade 0 or requiring guaranteed hFE ≥ 350 at 100 °C. |
| PMBT3904,215 | Standard NPN BJT (no built-in resistors); requires external RB and RBE; lower VCEsat (300 mV) but no integrated bias network. | Used where design flexibility justifies added passives and layout complexity for ultra-low-cost production. | Choose PMBT3904,215 only if external bias tuning is required or when retrofitting legacy schematics without RET support. |
Compared with NSV113ZK,115, PBRN113ZK,115 offers broader qualification scope but slightly looser hFE guarantee; versus PMBT3904,215, it trades off design flexibility for reduced component count and faster layout iteration.
Availability
PBRN113ZK,115 is available at Aetrix Electronics and suitable for automotive load switching, industrial peripheral driver, and LED array control applications requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.
Supply support for PBRN113ZK,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on essential efficiency technologies, delivering high-performance, reliable discrete, logic, and MOSFET solutions for automotive, industrial, and consumer markets.
The PBRN113ZK,115 belongs to Nexperia's BISS RET family-engineered to replace discrete BJT-resistor combinations in cost-sensitive, space-constrained switching applications while maintaining automotive-grade robustness.
FAQ
What is the maximum continuous collector current rating for PBRN113ZK,115?
The PBRN113ZK,115 has a maximum continuous output current (IO) of 600 mA under standard FR4 PCB conditions (single-sided copper, tin-plated, standard footprint). This rating drops to 700 mA with enhanced thermal pad (1 cm² collector mounting area) and rises to 800 mA for pulsed operation (tp ≤1 ms, duty cycle ≤0.33). Exceeding these limits risks thermal runaway or permanent junction damage.
Does PBRN113ZK,115 require external base resistors?
No, PBRN113ZK,115 does not require external base resistors-it integrates R1 = 1 kΩ (base input resistor) and R2 = 10 kΩ (base-emitter feedback resistor) internally. This eliminates two passives, simplifies schematic capture, and ensures consistent biasing across temperature and process variation. The R2/R1 ratio is tightly controlled at 10 ±10%.
What is the typical VCEsat of PBRN113ZK,115 at 600 mA collector current?
At IC = 600 mA and IB = 6 mA, the PBRN113ZK,115 exhibits a typical VCEsat of 270 mV, with a maximum of 550 mV. This value is measured under Tamb = 25 °C and reflects the device's low-saturation performance at its rated continuous current-critical for minimizing conduction losses in high-duty-cycle switching.
Is PBRN113ZK,115 qualified for automotive applications?
Yes, PBRN113ZK,115 is qualified per AEC-Q101 for automotive applications. It operates across −65 °C to +150 °C junction temperature, supports 150 °C ambient operation, and meets IEC 60134 absolute maximum ratings. While not branded "AEC-Q101 Grade 0", its thermal and electrical specs align with under-hood ECU requirements when used within published derating curves.
What is the marking code for PBRN113ZK,115 on the package?
The top-side marking code for PBRN113ZK,115 is "G5", laser-etched on the SOT346 body. This code uniquely identifies the PBRN113ZK variant and distinguishes it from other members of the PBRN113Z series (e.g., PBRN113ZS marked "N113ZS"). The "115" suffix in the orderable part number indicates 3000-unit tape-and-reel packaging.
PBRN113ZK,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Transistor Type:
- NPN - Pre-Biased
- Current - Collector (Ic) (Max):
- 600 mA
- Voltage - Collector Emitter Breakdown (Max):
- 40 V
- Resistor - Base (R1):
- 1 kOhms
- Resistor - Emitter Base (R2):
- 10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 500 @ 300mA, 5V
- Vce Saturation (Max) @ Ib, Ic:
- 1.15V @ 8mA, 800mA
- Current - Collector Cutoff (Max):
- 500nA
- Frequency - Transition:
- -
- Power - Max:
- 250 mW
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SMT3; MPAK
PBRN113ZK,115 FAQ
1.How can I place an order for PBRN113ZK,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for PBRN113ZK,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PBRN113ZK,115 reliable?
The price and inventory of PBRN113ZK,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PBRN113ZK,115 is usually 5 days.
3.What payment methods are accepted for PBRN113ZK,115?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PBRN113ZK,115 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PBRN113ZK,115?
PBRN113ZK,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PBRN113ZK,115 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PBRN113ZK,115?
For technical support, including PBRN113ZK,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PBRN113ZK,115 requirements.
6.How does Aetrix verify that PBRN113ZK,115 is sourced from the original manufacturer or authorized distributors?
All PBRN113ZK,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PBRN113ZK,115 meets industry standards.
7.What is the process for return or replacement of PBRN113ZK,115?
All PBRN113ZK,115 units undergo pre-shipment inspection (PSI). If there is an issue with PBRN113ZK,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PBRN113ZK,115 part is unused and in its original packaging.
Return procedure for PBRN113ZK,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
PBRN113ZK,115 Tags
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MUN5211T1G
onsemi
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DTC043ZEBTL
Rohm Semiconductor
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DTC114EKAT146
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DRDNB16W-7
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MMUN2211LT1G
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