NXP Semiconductors PBRN113ZS,126

Overview

PBRN113ZS,126 from Nexperia is an NPN resistor-equipped transistor (RET) in TO-92 (SOT54) package, designed for medium-current switching with 800 mA output capability, 40 V V_CEO, and low 0.56 V typical V_CEsat at 800 mA/8 mA drive-used in automotive and industrial peripheral drivers where space-constrained through-hole mounting is required.

For engineers reviewing the PBRN113ZS,126 datasheet, PBRN113ZS,126 pinout, PBRN113ZS,126 application, or PBRN113ZS,126 equivalent, key selection criteria include its built-in R1 = 1 kΩ / R2 = 10 kΩ bias network, ±10% R2/R1 ratio tolerance, 450–650 h_FE at 800 mA, and thermal resistance of 179 K/W on FR4 PCB-critical for reliable operation in thermally demanding load-switching circuits.

Technical Context

The PBRN113ZS,126 integrates two precision bias resistors (R1 = 1 kΩ, R2/R1 = 10 ±10%) to eliminate external base components, enabling direct logic-level drive from microcontrollers or gate drivers. Its BISS (Breakthrough In Small Signal) architecture delivers high current gain and low saturation voltage simultaneously.

As a through-hole NPN RET, it operates with collector-emitter breakdown up to 40 V, emitter-base limit of 5 V, and input voltage range from −5 V to +10 V-supporting robust digital interface behavior in noisy industrial environments while maintaining safe off-state leakage (<0.5 µA ICEO).

Key Specifications

Pinout & Package

Package: SOT54 (JEDEC TO-92, JEITA SC-43A), plastic single-ended leaded through-hole package with 3 leads; 5.2 mm × 5.0 mm × 14.5 mm body, 2.54 mm lead pitch, straight leads for axial insertion.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN resistor-equipped transistor applications.

Compared with PBRN113ZK and PDTC143ZS, the PBRN113ZS,126 uniquely combines through-hole mechanical reliability, 800 mA drive, and 179 K/W thermal resistance-making it the sole option among these three for high-current, thermally stressed, serviceable designs.

Availability

PBRN113ZS,126 is available at Aetrix Electronics and suitable for automotive door modules, industrial PLC output stages, and consumer appliance motor control requiring stable component supply and long-term through-hole manufacturing support.

Supply support for PBRN113ZS,126 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential efficiency technologies-including logic, discrete, and MOSFET solutions-with manufacturing rooted in process innovation and automotive-grade quality.

The PBRN113ZS,126 belongs to Nexperia's BISS RET family, engineered specifically for high-reliability, medium-current switching in automotive and industrial applications where integrated biasing and thermal resilience are critical.

FAQ

What is the maximum continuous collector current rating for PBRN113ZS,126?

The PBRN113ZS,126 is rated for 800 mA continuous output current under standard FR4 PCB conditions (single-sided copper, tin-plated, standard footprint). This rating is confirmed in Table 2 of the datasheet and validated across ambient temperatures from −65 °C to +150 °C, making it suitable for sustained high-current switching in demanding environments.

Does PBRN113ZS,126 have built-in base resistors, and what are their values?

Yes, the PBRN113ZS,126 integrates two monolithic silicon-based bias resistors: R1 = 1 kΩ (min 0.7 kΩ, max 1.3 kΩ) and R2/R1 = 10 ±10%. These values are specified in Table 2 and Table 8 of the datasheet, enabling direct connection to logic outputs without external components-reducing design complexity and improving production yield.

What is the collector-emitter saturation voltage of PBRN113ZS,126 at full load?

At 800 mA collector current and 8 mA base drive, the PBRN113ZS,126 exhibits a typical V_CEsat of 0.56 V, with a maximum of 1.15 V (Table 8). This low saturation voltage minimizes power dissipation (≤900 mW worst-case), supporting efficient operation in thermally limited applications such as enclosed control modules.

Is PBRN113ZS,126 suitable for automotive applications, and which standards does it meet?

Yes, the PBRN113ZS,126 is qualified for automotive use per its 40 V V_CEO, 150 °C T_j rating, and robust transient tolerance (V_I = −5 V to +10 V). While not explicitly AEC-Q101 certified in this datasheet revision, its construction, limiting values, and application notes align with ISO 7637-2 load-dump immunity requirements for body electronics modules.

What is the thermal resistance from junction to ambient for PBRN113ZS,126 on a standard FR4 PCB?

The PBRN113ZS,126 has a thermal resistance R_th(j-a) of 179 K/W when mounted on an FR4 PCB with single-sided copper, tin-plated, and standard footprint (Table 7). This value enables ≥500 mW continuous power dissipation at 70 °C ambient-critical for maintaining junction temperature below 150 °C in sealed enclosures.