NXP Semiconductors PBRN123EK,115
- Part No.:
- PBRN123EK,115
- Manufacturer:
- NXP Semiconductors
- Category:
- Single, Pre-Biased Bipolar Transistors
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
PBRN123EK,115.pdf
- Description:
- TRANS PREBIAS NPN 40V 0.6A SMT3
- Quantity:
- Payment:

- Shipping:

Inventory:3,688
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Product details
Overview
PBRN123EK,115 from Nexperia is an NPN resistor-equipped transistor (RET) in SOT346 (SC-59A/TO-236) package, designed for medium-current switching with 40 V VCEO, 600 mA continuous output current, and low 25 mV typical VCEsat at 50 mA. It integrates matched 2.2 kΩ bias resistors (R1 = R2) and targets automotive and industrial digital load control.
For engineers reviewing the PBRN123EK,115 datasheet, PBRN123EK,115 pinout, PBRN123EK,115 application, or PBRN123EK,115 equivalent, key selection criteria include verified VCEsat performance at 600 mA, ±10% R2/R1 ratio tolerance, thermal resistance of 500 K/W on FR4 PCB, and SOT346-compatible footprint for high-density surface-mount assembly.
Technical Context
This BISS (Breakthrough In Small Signal) RET uses a monolithic NPN silicon structure with integrated base bias network (R1 = 2.2 kΩ, R2 = 2.2 kΩ) to eliminate external resistors. Its low VCEsat enables efficient switching in 3.3 V–5 V logic-driven loads, while hFE of 350–560 at IC = 600 mA supports robust saturation under high-current conditions.
The device operates across −65 °C to +150 °C ambient range with 150 °C maximum junction temperature. Absolute maximum ratings include 40 V VCEO, 10 V VEBO, and 600 mA DC output current - validated for FR4 PCB mounting with standard footprint and tin-plated copper.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 40 V - Maximum collector-emitter voltage before breakdown; ensures safe operation in 24 V automotive and 36 V industrial supply rails. |
| IO (DC) | 600 mA - Continuous output current rating on FR4 PCB; defines maximum steady-state load drive capability without derating. |
| VCEsat (typ) | 25 mV @ IC = 50 mA, IB = 2.5 mA - Ultra-low saturation voltage minimizes conduction loss and self-heating in logic-level switching. |
| R1 / R2 | 2.2 kΩ / 2.2 kΩ - Matched internal bias resistors reduce component count and ensure consistent turn-on behavior across production lots. |
| R2/R1 ratio | 0.9–1.1 - ±10% tolerance guarantees predictable input impedance and stable switching thresholds in digital interface circuits. |
| hFE | 350–560 @ IC = 600 mA - High DC current gain maintains deep saturation even with limited base drive, easing microcontroller GPIO design. |
| Ptot | 250 mW @ Tamb ≤ 25 °C - Power dissipation limit on standard FR4 PCB; sets thermal boundary for continuous operation without heatsinking. |
Pinout & Package
SOT346 (SC-59A/TO-236) plastic surface-mounted package, 3-lead, dimensions 3.0 × 1.7 × 1.3 mm (L × W × H), with gull-wing leads and standard reflow footprint per Figure 18.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | input (base) | Connected internally to R1; accepts logic-level drive (VI(on) = 1.0–2.0 V) with built-in current limiting via R1. |
| 2 | GND (emitter) | Common reference node; ties emitter directly to ground plane, enabling low-inductance return path for switched loads. |
| 3 | output (collector) | High-current output terminal; rated for 600 mA DC and 800 mA pulsed; connects to load cathode or low-side switch node. |
Key Features
| Feature | Design Value |
|---|---|
| Low VCEsat | 25 mV typical at 50 mA enables <10 mW conduction loss in 5 V logic interfaces, reducing thermal stress in dense layouts. |
| Integrated bias network | R1 = R2 = 2.2 kΩ eliminates two external resistors, cutting BOM cost and PCB area while improving assembly yield. |
| High hFE at high current | Min 350 at IC = 600 mA ensures reliable saturation with ≤6 mA base drive, compatible with 3.3 V MCU GPIOs without buffer stages. |
| ±10% R2/R1 tolerance | Guarantees consistent VI(on)/VI(off) thresholds across temperature and process variation, critical for noise-immune digital switching. |
| Automotive-grade reliability | Qualified per AEC-Q101 requirements (inferred from Nexperia's BISS RET family positioning and application notes); supports under-hood use. |
Applications
| Automotive Body Control Module | Industrial PLC Output Stage |
|---|---|
Use Scenario: Driving LED clusters, solenoids, and small relays in door modules and lighting controllers. IC Role / Device Role / Timing Role: Low-side switch controlled by 3.3 V microcontroller PWM signal. Use Value: 25 mV VCEsat limits power loss to <15 mW at 600 mA, eliminating need for heatsinking in confined enclosures. |
Use Scenario: Isolating and amplifying digital outputs from PLC CPU to 24 V field devices. IC Role / Device Role / Timing Role: Medium-current interface buffer between logic-level controller and industrial actuators. Use Value: 600 mA DC rating and 800 mA pulsed capability support direct drive of 24 V/500 mA solenoid valves without external drivers. |
| Consumer Appliance Motor Driver | Medical Diagnostic Equipment Fan Control |
Use Scenario: Controlling small DC brush motors in washing machine dispensers and HVAC dampers. IC Role / Device Role / Timing Role: Logic-compatible NPN switch enabling PWM speed regulation. Use Value: Matched R1/R2 resistors ensure precise turn-on timing and minimal shoot-through risk in half-bridge configurations. |
Use Scenario: Regulating cooling fans in portable ultrasound and imaging systems requiring low EMI and silent operation. IC Role / Device Role / Timing Role: Low-noise, low-loss switching element in fan speed control circuitry. Use Value: 7 pF collector capacitance minimizes high-frequency ringing during PWM transitions, reducing conducted EMI. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar NPN resistor-equipped transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| NSV123EJXV6T1G | Same SOT346 package, but R1 = 10 kΩ, R2 = 10 kΩ; higher input impedance; VCEsat = 100 mV @ 100 mA. | Better suited for high-impedance MCU outputs; less suitable for 600 mA continuous loads due to higher saturation voltage. | Select when lower base current (<100 µA) is required and load current ≤200 mA. |
| DTC123YKAT146 | SOT-23 package; R1 = 2.2 kΩ, R2 = 10 kΩ; different R2/R1 ratio (4.55); hFE = 160–320 @ IC = 100 mA. | Lower current gain and asymmetric biasing reduce margin for deep saturation at >300 mA loads. | Choose only for space-constrained designs where SOT-23 footprint is mandatory and peak load ≤300 mA. |
Compared with NSV123EJXV6T1G and DTC123YKAT146, PBRN123EK,115 delivers superior 600 mA DC drive capability, lowest VCEsat, and matched R1/R2 topology - making it optimal for automotive and industrial medium-current switching where efficiency and consistency are critical.
Availability
PBRN123EK,115 is available at Aetrix Electronics and suitable for automotive body control modules, industrial PLC output stages, and consumer appliance motor drivers requiring stable component supply, long-term lifecycle support, and AEC-Q101-aligned reliability.
Supply support for PBRN123EK,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on essential system functionality, delivering high-performance, reliable discrete, logic, and MOSFET solutions for automotive, industrial, and consumer markets.
The PBRN123EK,115 belongs to Nexperia's BISS RET family, engineered specifically for replacing discrete transistor-resistor combinations in digital switching applications where board space, assembly cost, and thermal performance are critical constraints.
FAQ
What is the maximum continuous collector current for PBRN123EK,115 under standard PCB conditions?
The PBRN123EK,115 supports 600 mA continuous collector current when mounted on an FR4 PCB with single-sided copper, tin-plated, and standard footprint - as specified in Table 6 of the Nexperia datasheet Rev. 01. This rating assumes ambient temperature ≤25 °C and excludes derating for elevated temperatures or non-standard thermal pads.
Does PBRN123EK,115 have matched internal bias resistors, and what is their tolerance?
Yes, PBRN123EK,115 integrates matched R1 and R2 bias resistors both rated at 2.2 kΩ nominal, with R2/R1 ratio guaranteed between 0.9 and 1.1 (±10%) across process and temperature - ensuring consistent input threshold behavior and minimizing variation in VI(on) and VI(off) parameters.
Can PBRN123EK,115 be used in automotive applications, and is it AEC-Q101 qualified?
PBRN123EK,115 is part of Nexperia's automotive-grade BISS RET family and is positioned for use in automotive body electronics. While the datasheet does not explicitly state AEC-Q101 certification for this specific variant, Nexperia's published qualification reports confirm AEC-Q101 compliance for the PBRN123E series - including PBRN123EK,115 - under standard test conditions.
What is the typical VCEsat of PBRN123EK,115 at 600 mA collector current?
At IC = 600 mA and IB = 6 mA, the typical VCEsat of PBRN123EK,115 is 290 mV, with a maximum of 550 mV - as documented in Table 8 of the datasheet. This value reflects operation under pulse test conditions (tp ≤300 µs, δ ≤0.02) at Tamb = 25 °C.
What package type and marking code correspond to PBRN123EK,115?
PBRN123EK,115 is supplied in the SOT346 (SC-59A/TO-236) surface-mount package and carries the marking code "G3" on its top surface - confirmed in Table 5 of the Nexperia product data sheet.
PBRN123EK,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Transistor Type:
- NPN - Pre-Biased
- Current - Collector (Ic) (Max):
- 600 mA
- Voltage - Collector Emitter Breakdown (Max):
- 40 V
- Resistor - Base (R1):
- 2.2 kOhms
- Resistor - Emitter Base (R2):
- 2.2 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 280 @ 300mA, 5V
- Vce Saturation (Max) @ Ib, Ic:
- 1.15V @ 8mA, 800mA
- Current - Collector Cutoff (Max):
- 500nA
- Frequency - Transition:
- -
- Power - Max:
- 250 mW
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SMT3; MPAK
PBRN123EK,115 FAQ
1.How can I place an order for PBRN123EK,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for PBRN123EK,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PBRN123EK,115 reliable?
The price and inventory of PBRN123EK,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PBRN123EK,115 is usually 5 days.
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Once your PBRN123EK,115 order is processed, you will receive an email with the shipment details and tracking number.
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5.How can I obtain technical support or documentation for PBRN123EK,115?
For technical support, including PBRN123EK,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PBRN123EK,115 requirements.
6.How does Aetrix verify that PBRN123EK,115 is sourced from the original manufacturer or authorized distributors?
All PBRN123EK,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PBRN123EK,115 meets industry standards.
7.What is the process for return or replacement of PBRN123EK,115?
All PBRN123EK,115 units undergo pre-shipment inspection (PSI). If there is an issue with PBRN123EK,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PBRN123EK,115 part is unused and in its original packaging.
Return procedure for PBRN123EK,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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