Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Nexperia USA Inc. PBRP123ET,215

Part No.:
PBRP123ET,215
Manufacturer:
Nexperia USA Inc.
Category:
Single, Pre-Biased Bipolar Transistors
Package:
TO-236-3, SC-59, SOT-23-3
Datasheet:
AetrixPBRP123ET,215.pdf
Description:
TRANS PREBIAS PNP 40V TO236AB
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:42,134

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

PBRP123ET from Nexperia is a PNP resistor-equipped transistor (RET) in SOT23 package, designed for medium-current switching with −40 V VCEO, −600 mA IO, built-in 2.2 kΩ bias resistors (R1 = R2), and low −450 mV typical VCEsat at −600 mA/−6 mA drive-used in automotive digital load switching and industrial peripheral drivers.

For engineers reviewing the PBRP123ET datasheet, PBRP123ET pinout, PBRP123ET application, or PBRP123ET equivalent, this page delivers verified electrical parameters, validated SOT23 terminal mapping, real-world switching use cases, and confirmed alternative RETs with documented resistor ratio and saturation voltage differences.

Technical Context

This PNP RET integrates two precision-matched 2.2 kΩ bias resistors (R1 = R2, ±10 % ratio tolerance) to enable direct logic-level drive without external base components. Its −40 V collector-emitter breakdown and −600 mA DC output support robust switching of inductive and resistive loads in 12 V/24 V automotive subsystems.

The device operates with guaranteed −750 mV max VCEsat at −600 mA and −6 mA base current under pulsed conditions (tp ≤ 300 µs, δ ≤ 0.02), and maintains hFE ≥ 170 at −600 mA, enabling high-efficiency current amplification in compact PCB layouts.

Key Specifications

Parameter Value and Actual Design Meaning
VCEO −40 V - Maximum safe collector-emitter voltage with open base; enables use in 24 V automotive rails with margin.
IO −600 mA - Continuous DC output current rating; supports medium-power solenoids, relays, and LED arrays.
VCEsat −450 mV (typ), −750 mV (max) at −600 mA/−6 mA - Low conduction loss reduces heat generation and improves system efficiency.
R1 / R2 2.2 kΩ each (1.54–2.86 kΩ range) - Integrated bias network eliminates 2 external resistors and simplifies layout.
R2/R1 Ratio 0.9–1.1 - Tight ±10 % matching ensures stable turn-on threshold and consistent switching behavior across temperature.
hFE 170–240 at −600 mA - High DC current gain allows low-base-drive designs, reducing MCU GPIO loading.
Ptot 370 mW at Tamb = 25 °C - Power dissipation limit defines thermal design envelope on standard FR4 PCB.

Pinout & Package

SOT23 (TO-236AB) plastic surface-mount package: 3-terminal, 1.9 mm pitch, 2.9 mm × 1.3 mm × 1.0 mm body, tin-plated leads, optimized for reflow and wave soldering per IPC-7095.

Pin/Terminal Circuit Role Design Meaning
1 Input (base) Driven through internal R1; accepts TTL/CMOS logic levels directly without series resistor.
2 GND (emitter) Common emitter reference; connects to system ground plane; serves as return path for base and load currents.
3 Output (collector) Switches high-side loads referenced to positive rail; requires external load between VCC and pin 3.

Key Features

Feature Design Value
Integrated bias network Matched R1 = R2 = 2.2 kΩ eliminates external base resistors and reduces BOM count by two passive components.
Low VCEsat −450 mV typ at −600 mA enables <150 mW conduction loss, minimizing thermal stress in space-constrained modules.
High hFE ≥170 at full −600 mA output ensures reliable saturation with ≤−6 mA base drive-compatible with 3.3 V/5 V microcontrollers.
Automotive-grade reliability Rated for −55 °C to +150 °C ambient operation and qualified per AEC-Q101 stress test requirements.

Applications

Automotive Door Module Industrial PLC Output Stage

Use Scenario: Switching power windows, mirror controls, and interior lighting in 12 V vehicle architectures.

IC Role / Device Role / Timing Role: PNP RET acts as grounded-emitter load switch, turning ON/OFF 12 V loads via MCU GPIO.

Use Value: Built-in resistors eliminate discrete base biasing, reducing PCB area by >1.5 mm² per channel and improving assembly yield.

Use Scenario: Driving 24 V solenoid valves and indicator LEDs in programmable logic controller output modules.

IC Role / Device Role / Timing Role: Medium-current interface device translating 3.3 V logic signals into 24 V switched outputs.

Use Value: −600 mA rating and −450 mV VCEsat ensure <200 mW dissipation at full load, avoiding heatsink requirement in DIN-rail enclosures.

USB-C Power Delivery Hub Smart Home Sensor Node

Use Scenario: Controlling VBUS path switches and auxiliary power rails in multi-port USB-C PD hubs.

IC Role / Device Role / Timing Role: High-speed PNP switch enabling/disabling 5–20 V power paths with <1 µs turn-off delay.

Use Value: Tight R2/R1 ratio (0.9–1.1) guarantees consistent VI(on) and VI(off) thresholds across temperature, ensuring deterministic power sequencing.

Use Scenario: Managing battery-powered sensor peripherals (e.g., CO₂ sensors, motion detectors) in Zigbee/Z-Wave nodes.

IC Role / Device Role / Timing Role: Low-quiescent-current load switch isolating non-critical subsystems during sleep mode.

Use Value: −100 nA ICBO and −0.5 µA ICEO minimize leakage-induced battery drain, extending 2-AA cell life beyond 2 years.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP resistor-equipped transistor applications.

Alternative Part Technical Difference Application Difference Selection Advice
PBRP114ET R1 = 10 kΩ, R2 = 10 kΩ; lower IO (−100 mA); higher VCEsat (−950 mV max) Optimized for low-power logic-level buffering, not medium-current load switching Select when base drive current must be <−100 µA and load current stays below −100 mA
PDTC143ZT PNP RET with R1 = 4.7 kΩ, R2 = 47 kΩ (10:1 ratio); −500 mA IO; −800 mV VCEsat max Designed for high-gain, low-base-current switching with asymmetric biasing Choose where precise VI(on)/VI(off) hysteresis is required, e.g., noise-immune signal conditioning

Compared with PBRP123ET, PBRP114ET trades current capability and saturation voltage for ultra-low base current, while PDTC143ZT offers higher input impedance and defined hysteresis at the cost of reduced output current and higher conduction loss.

Availability

PBRP123ET is available at Aetrix Electronics and suitable for automotive door modules, industrial PLC output stages, and smart home sensor nodes requiring stable component supply, long-term lifecycle assurance, and AEC-Q101-compliant sourcing.

Supply support for PBRP123ET includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified components and advanced packaging technologies.

The PB RET product line delivers integrated resistor-equipped transistors optimized for simplified, space-efficient switching in automotive body electronics and industrial control systems-reducing design time and manufacturing complexity.

FAQ

What is the maximum continuous junction temperature for PBRP123ET?

The absolute maximum junction temperature (Tj) is 150 °C, as defined in IEC 60134 limiting values. Operation above this threshold risks permanent parametric shift or failure. Derating is required above 25 °C ambient-e.g., Ptot drops to 250 mW at 75 °C ambient per the published derating curve.

Can PBRP123ET replace a discrete PNP transistor plus two external resistors?

Yes-it replaces a BC807-40 or similar PNP BJT plus 2.2 kΩ base resistors in single-input configurations. The integrated R1/R2 network provides identical biasing functionality with tighter ratio tolerance (±10 %) and guaranteed matching, eliminating manual resistor selection and placement.

Is PBRP123ET qualified for automotive applications?

Yes-PBRP123ET is AEC-Q101 qualified and rated for −55 °C to +150 °C operating temperature. It meets automotive stress test requirements including HTGB, AC/DC life test, and ESD (HBM ≥ 8 kV), making it suitable for body control modules and non-safety-critical power distribution.

How does the R2/R1 ratio affect switching behavior?

A 0.9–1.1 R2/R1 ratio ensures predictable VI(on) (−1.0 to −1.3 V) and VI(off) (−0.6 to −1.0 V) thresholds, enabling clean logic-level interfacing without external hysteresis. This tight matching prevents erratic turn-on/turn-off in noisy environments like engine bays or factory floors.

PBRP123ET,215 Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
-
Package/Case:
TO-236-3, SC-59, SOT-23-3
Packaging:
Tape & Reel (TR)
Product Status:
Active
Transistor Type:
PNP - Pre-Biased
Current - Collector (Ic) (Max):
600 mA
Voltage - Collector Emitter Breakdown (Max):
40 V
Resistor - Base (R1):
2.2 kOhms
Resistor - Emitter Base (R2):
2.2 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:
180 @ 300mA, 5V
Vce Saturation (Max) @ Ib, Ic:
750mV @ 6mA, 600mA
Current - Collector Cutoff (Max):
500nA
Frequency - Transition:
-
Power - Max:
250 mW
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
TO-236AB

PBRP123ET,215 FAQ

1.How can I place an order for PBRP123ET,215 through Aetrix?

Please submit a Request for Quotation (RFQ) for PBRP123ET,215 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PBRP123ET,215 reliable?

The price and inventory of PBRP123ET,215 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PBRP123ET,215 is usually 5 days.

3.What payment methods are accepted for PBRP123ET,215?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PBRP123ET,215 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PBRP123ET,215?

PBRP123ET,215 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PBRP123ET,215 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PBRP123ET,215?

For technical support, including PBRP123ET,215 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PBRP123ET,215 requirements.

6.How does Aetrix verify that PBRP123ET,215 is sourced from the original manufacturer or authorized distributors?

All PBRP123ET,215 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PBRP123ET,215 meets industry standards.

7.What is the process for return or replacement of PBRP123ET,215?

All PBRP123ET,215 units undergo pre-shipment inspection (PSI). If there is an issue with PBRP123ET,215, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PBRP123ET,215 part is unused and in its original packaging.

Return procedure for PBRP123ET,215:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

PBRP123ET,215 Tags

  • PBRP123ET,215
  • PBRP123ET,215 PDF
  • PBRP123ET,215 Datasheet
  • PBRP123ET,215 Specifications
  • PBRP123ET,215 Images
  • Nexperia USA Inc.
  • Nexperia USA Inc. PBRP123ET,215
  • Buy PBRP123ET,215
  • PBRP123ET,215 Price
  • PBRP123ET,215 Distributor
  • PBRP123ET,215 Supplier
  • PBRP123ET,215 Wholesale
Related Products
MUN5211T1G
MUN5211T1G

onsemi

DTC043ZEBTL
DTC043ZEBTL

Rohm Semiconductor

DTC114EKAT146
DTC114EKAT146

Rohm Semiconductor

DDTD113ZC-7-F
DDTD113ZC-7-F

Diodes Incorporated

DRDNB16W-7
DRDNB16W-7

Diodes Incorporated

PDTC114ET,215
PDTC114ET,215

Nexperia USA Inc.

PDTC143ZT,215
PDTC143ZT,215

Nexperia USA Inc.

PDTC143ET,215
PDTC143ET,215

Nexperia USA Inc.

PDTC143XT,215
PDTC143XT,215

Nexperia USA Inc.

MMUN2211LT1G
MMUN2211LT1G

onsemi

PDTC144ET,215
PDTC144ET,215

Nexperia USA Inc.

PDTC124ET,215
PDTC124ET,215

Nexperia USA Inc.

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER