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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

NXP Semiconductors PBSS2515E,115

Name: PBSS2515E,115
Brand: NXP Semiconductors
SKU: PBSS2515E,115
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PBSS2515E,115

Manufacturer:: NXP Semiconductors

Category:: Single Bipolar Transistors

Package:: SC-75, SOT-416

Datasheet:: PBSS2515E,115.pdf

Description:: TRANS NPN 15V 0.5A SC-75

Quantity:: RFQ Add To RFQ list

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Product details

Overview

PBSS2515E,115 from Nexperia is an NPN low V_CEsat Breakthrough In Small Signal (BISS) transistor in SOT416 (SC-75) package, rated for 15 V V_CEO, 0.5 A continuous I_C, and 300–500 mΩ R_CEsat at I_C = 500 mA / I_B = 50 mA. It serves as a high-efficiency, space-constrained switch in DC-DC converters and MOSFET gate drivers.

For engineers reviewing the PBSS2515E,115 datasheet, PBSS2515E,115 pinout, PBSS2515E,115 application, or PBSS2515E,115 equivalent, key selection criteria include its ultra-low saturation resistance, thermal performance on FR4 PCBs, 250 mV V_CEsat max at full load, 420 MHz f_T, and compatibility with portable and motor-control designs requiring minimal board area.

Technical Context

The PBSS2515E,115 employs BISS technology to achieve significantly lower V_CEsat than conventional small-signal transistors while maintaining high h_FE (90 min at I_C = 500 mA). Its structure enables efficient switching with t_on = 25 ns and t_off = 249 ns under defined test conditions (V_CC = 11 V, I_C = 250 mA).

Thermally, it delivers 250 mW P_tot with 1 cm² collector pad (R_th(j-a) = 500 K/W), and operates across −65 °C to +150 °C ambient. The device is optimized for low-duty-cycle pulse operation (t_p ≤ 1 ms) and exhibits stable h_FE down to −55 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	15 V - Maximum safe collector-emitter voltage with base open; defines system rail compatibility up to 12 V nominal supplies.
I_C	0.5 A - Continuous collector current rating; supports sustained switching in fan/motor control and charging circuits.
R_CEsat	300–500 mΩ - Low saturation resistance at I_C = 500 mA / I_B = 50 mA; reduces conduction loss and heat generation vs. standard transistors.
f_T	250–420 MHz - Transition frequency at V_CE = 5 V, I_C = 100 mA; enables reliable operation in high-speed switching applications.
h_FE	90 min at I_C = 500 mA - High DC current gain under heavy load; allows reduced base drive current and smaller driver circuitry.
V_BEsat	≤1.1 V - Base-emitter saturation voltage at I_C = 500 mA / I_B = 50 mA; ensures predictable turn-on behavior in logic-level driven stages.
P_tot	250 mW - Total power dissipation with 1 cm² collector pad; sets thermal design boundary for compact PCB layouts.

Pinout & Package

SOT416 (SC-75) plastic surface-mounted package: ultra-small outline (1.8 × 1.4 mm footprint), 3-pin, single-sided copper FR4 compatible, with 0.65 mm pitch and 0.25 mm lead thickness.

Pin/Terminal	Circuit Role	Design Meaning
1	Base	Control input terminal; requires ≥50 mA base drive for full saturation at 500 mA collector current.
2	Emiter	Reference node for biasing; connected to ground or low-side return path in common-emitter configurations.
3	Collector	High-current output terminal; thermally coupled to PCB pad; carries switched load current up to 0.5 A continuous.

Key Features

Feature	Design Value
Low V_CEsat	250 mV max at I_C = 500 mA - Reduces power loss by >50% vs. standard transistors, lowering thermal stress in dense layouts.
High I_C/I_CM	0.5 A continuous / 1 A peak - Supports robust switching in motor drivers and battery charging paths without derating.
High h_FE at high I_C	90 min at I_C = 500 mA - Enables direct microcontroller GPIO drive without external buffer stages in low-power systems.
Small footprint	SOT416 (1.8 × 1.4 mm) - Saves >60% PCB area vs. SOT23; ideal for wearables and space-constrained portable devices.
Wide T_j range	−65 °C to +150 °C - Ensures reliable operation in automotive under-hood and industrial ambient environments.

Applications

DC-to-DC Conversion	MOSFET Gate Driving
Use Scenario: Step-down (buck) converter top switch in portable power supplies with 3.3–12 V input rails. IC Role / Device Role / Timing Role: Low-side synchronous rectifier or pre-driver stage controlling high-side MOSFET gate. Use Value: 300–500 mΩ R_CEsat minimizes conduction loss, improving efficiency by ~2–3% over standard transistors at 500 mA load.	Use Scenario: Fast-turn-on gate driver for 20–50 V logic-level N-channel MOSFETs in motor H-bridge circuits. IC Role / Device Role / Timing Role: Active pull-down switch discharging MOSFET gate capacitance during turn-off. Use Value: 249 ns t_off and 34 ns t_f enable <1 µs dead-time control, reducing shoot-through risk in high-frequency PWM.
Motor Control	Portable Charging Circuits
Use Scenario: Low-voltage (≤12 V) brushed DC motor commutation in handheld tools or robotics. IC Role / Device Role / Timing Role: Current-switching element in half-bridge or discrete H-bridge configuration. Use Value: 1 A I_CM peak rating handles motor stall currents; 150 °C T_j max ensures reliability during intermittent overload.	Use Scenario: Load switch or battery protection FET controller in USB-powered battery packs and power banks. IC Role / Device Role / Timing Role: Precision current-limiting switch enabling programmable charge current via base resistor network. Use Value: Tight V_CEsat tolerance (250 mV max) ensures accurate current sensing and stable regulation at 500 mA charge rate.

DC-to-DC Conversion

MOSFET Gate Driving

Use Scenario: Step-down (buck) converter top switch in portable power supplies with 3.3–12 V input rails.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier or pre-driver stage controlling high-side MOSFET gate.

Use Value: 300–500 mΩ R_CEsat minimizes conduction loss, improving efficiency by ~2–3% over standard transistors at 500 mA load.

Use Scenario: Fast-turn-on gate driver for 20–50 V logic-level N-channel MOSFETs in motor H-bridge circuits.

IC Role / Device Role / Timing Role: Active pull-down switch discharging MOSFET gate capacitance during turn-off.

Use Value: 249 ns t_off and 34 ns t_f enable <1 µs dead-time control, reducing shoot-through risk in high-frequency PWM.

Motor Control

Portable Charging Circuits

Use Scenario: Low-voltage (≤12 V) brushed DC motor commutation in handheld tools or robotics.

IC Role / Device Role / Timing Role: Current-switching element in half-bridge or discrete H-bridge configuration.

Use Value: 1 A I_CM peak rating handles motor stall currents; 150 °C T_j max ensures reliability during intermittent overload.

Use Scenario: Load switch or battery protection FET controller in USB-powered battery packs and power banks.

IC Role / Device Role / Timing Role: Precision current-limiting switch enabling programmable charge current via base resistor network.

Use Value: Tight V_CEsat tolerance (250 mV max) ensures accurate current sensing and stable regulation at 500 mA charge rate.

Equivalent & Alternatives

The following parts are listed as comparable options for similar low V_CEsat transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2004LKQ-7	N-channel MOSFET (20 V, 4.5 A, 30 mΩ R_DS(on)); requires gate drive voltage >2.5 V; no inherent current gain.	Better for high-current, low-loss switching (>1 A); unsuitable where base-driven simplicity or bipolar timing control is required.	Select when higher efficiency at >1 A and gate drive capability exist; avoid if microcontroller GPIO must directly source 50 mA base current.
PBSS3515E,115	PNP complement (−15 V V_CEO, −0.5 A I_C, 300–500 mΩ R_CEsat); identical package and thermal specs; inverted polarity.	Used in complementary emitter-follower or high-side switch configurations where NPN cannot be placed in series with load.	Choose for symmetrical push-pull output stages or high-side load switching; not a functional replacement but a matched pair component.

Compared with DMN2004LKQ-7 and PBSS3515E,115, the PBSS2515E,115 offers unique advantages in base-driven simplicity, precise current-controlled switching, and ultra-compact size-making it optimal for low-power, space-constrained bipolar switching where MOSFET gate drive complexity or polarity mismatch is prohibitive.

Availability

PBSS2515E,115 is available at Aetrix Electronics and suitable for DC-DC conversion, motor control, and portable charging circuits requiring stable component supply, consistent parametric performance, and long-term manufacturing continuity.

Supply support for PBSS2515E,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global leader in discrete, logic, and PowerMOS semiconductors, spun off from NXP in 2017 and focused on automotive, industrial, computing, and consumer markets.

The PBSS2515E,115 belongs to Nexperia's BISS transistor family, engineered specifically for high-efficiency, low-voltage switching in space- and power-sensitive applications such as portable electronics and battery-powered systems.

FAQ

What is the maximum continuous collector current for PBSS2515E,115?

The PBSS2515E,115 has a maximum continuous collector current (I_C) of 0.5 A at T_amb ≤ 25 °C with standard FR4 PCB mounting. Derating applies above 25 °C per the power derating curve in the datasheet, reaching zero at 150 °C ambient. This rating ensures reliable operation in motor control and charging circuits without forced cooling.

Does PBSS2515E,115 support logic-level base drive from a 3.3 V microcontroller?

Yes, the PBSS2515E,115 can be fully saturated with a 3.3 V logic-level signal driving the base through an appropriate current-limiting resistor. At I_C = 500 mA, it requires only 50 mA base current, and V_BEsat is ≤1.1 V - well within the drive capability of most 3.3 V GPIOs with sufficient current sourcing capacity.

What is the thermal resistance junction-to-ambient for PBSS2515E,115 on a standard FR4 PCB?

The PBSS2515E,115 has a thermal resistance junction-to-ambient (R_th(j-a)) of 833 K/W when mounted on a standard FR4 PCB with single-sided copper and tin-plated finish. With a 1 cm² collector pad, this improves to 500 K/W - a critical parameter for thermal design in compact portable applications.

Is PBSS2515E,115 pin-compatible with other SOT416 transistors?

The PBSS2515E,115 uses the standard SOT416 (SC-75) 3-pin outline with pin 1 = base, pin 2 = emitter, pin 3 = collector. While mechanical pinout is identical across SOT416 devices, electrical compatibility depends on function (NPN/PNP), ratings, and gain - always verify V_CEO, I_C, and h_FE before substitution.

What marking code identifies PBSS2515E,115 on the device body?

The PBSS2515E,115 is marked with the code "1Q" on its top surface. This 2-character laser marking is consistent across all units in the 115 tape-and-reel packaging variant and aligns with Nexperia's standardized SOT416 marking scheme for quick visual identification on assembled PCBs.

PBSS2515E,115 Specifications

Product attributes: Attribute value

Manufacturer:: NXP Semiconductors

Series:: -

Package/Case:: SC-75, SOT-416

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 500 mA

Voltage - Collector Emitter Breakdown (Max):: 15 V

Vce Saturation (Max) @ Ib, Ic:: 250mV @ 50mA, 500mA

Current - Collector Cutoff (Max):: 100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 150 @ 100mA, 2V

Power - Max:: 250 mW

Frequency - Transition:: 420MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SC-75

PBSS2515E,115 FAQ

1.How can I place an order for PBSS2515E,115 through Aetrix?

Please submit a Request for Quotation (RFQ) for PBSS2515E,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PBSS2515E,115 reliable?

The price and inventory of PBSS2515E,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PBSS2515E,115 is usually 5 days.

3.What payment methods are accepted for PBSS2515E,115?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PBSS2515E,115 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PBSS2515E,115?

PBSS2515E,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PBSS2515E,115 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PBSS2515E,115?

For technical support, including PBSS2515E,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PBSS2515E,115 requirements.

6.How does Aetrix verify that PBSS2515E,115 is sourced from the original manufacturer or authorized distributors?

All PBSS2515E,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PBSS2515E,115 meets industry standards.

7.What is the process for return or replacement of PBSS2515E,115?

All PBSS2515E,115 units undergo pre-shipment inspection (PSI). If there is an issue with PBSS2515E,115, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PBSS2515E,115 part is unused and in its original packaging.

Return procedure for PBSS2515E,115:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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