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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

Nexperia USA Inc. PBSS301NX,115

Name: PBSS301NX,115
Brand: Nexperia USA Inc.
SKU: PBSS301NX,115
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PBSS301NX,115

Manufacturer:: Nexperia USA Inc.

Category:: Single Bipolar Transistors

Package:: TO-243AA

Datasheet:: PBSS301NX,115.pdf

Description:: TRANS NPN 12V 5.3A SOT-89

Quantity:: RFQ Add To RFQ list

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Inventory:148

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Product details

Overview

PBSS301NX,115 from Nexperia is an AEC-Q101-qualified NPN low V_CE(sat) BISS transistor in SOT89 package, rated for 12 V V_CEO, 5.3 A continuous collector current, and 28 mΩ typical R_CE(sat) at 4 A/200 mA drive - deployed as a high-efficiency power switch in automotive DC-DC converters and motor control stages.

For engineers reviewing the PBSS301NX,115 datasheet, PBSS301NX,115 pinout, PBSS301NX,115 application, or PBSS301NX,115 equivalent, key selection criteria include its low saturation resistance, AEC-Q101 qualification, thermal performance on FR4 PCBs, and compatibility with gate-driving and charging-circuit topologies requiring <200 mV V_CE(sat) at 5.3 A.

Technical Context

This NPN BISS transistor uses optimized epitaxial base design to achieve high h_FE (340 typ. at 6 A) while maintaining ultra-low V_CE(sat) - enabling high-current switching with minimal conduction loss and reduced heatsinking requirements. Its 150 °C max junction temperature and AEC-Q101 qualification confirm suitability for under-hood automotive environments.

The device operates with fast switching dynamics (t_on = 55 ns, t_off = 270 ns) and exhibits stable gain across −55 °C to +125 °C ambient, supported by low thermal resistance (R_th(j-a) = 76 K/W on FR4 with 6 cm² collector pad), making it appropriate for thermally constrained power-stage designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	12 V - Maximum safe blocking voltage in common-emitter configuration; defines upper rail limit for 12 V automotive systems.
I_C	5.3 A continuous - Sustained load current capability without derating at T_amb ≤ 25 °C on standard FR4 PCB.
R_CE(sat)	28 mΩ typ. at I_C = 4 A, I_B = 200 mA - Enables <112 mW conduction loss at 4 A, reducing thermal stress vs. conventional transistors.
h_FE	340 typ. at I_C = 6 A - High current gain ensures robust saturation with modest base drive, easing driver IC selection.
t_off	270 ns - Fast turn-off supports PWM frequencies up to ~1 MHz in synchronous buck or motor phase-control applications.
AEC-Q101	Qualified - Validated for automotive use per stress-test requirements including HTGB, HTRB, and temperature cycling.

Pinout & Package

SOT89 (SC-62/TO-243) plastic surface-mount package: 3-lead, 1.5 mm pitch, 4.5 × 2.5 × 1.5 mm body; collector tab provides primary thermal path to PCB copper.

Pin/Terminal	Circuit Role	Design Meaning
1	Emitter	Low-impedance return path for collector current; connected to ground or low-side reference in switch configurations.
2	Collector	Main power output terminal; electrically and thermally coupled to large PCB copper area for heat dissipation.
3	Base	Control input requiring ~200 mA drive for full saturation at 4 A; sensitive to ESD and requires series resistor in most layouts.

Key Features

Feature	Design Value
Low V_CE(sat)	140–200 mV at 5.3 A/265 mA drive - reduces conduction loss by >40% vs. standard bipolar transistors in same package.
AEC-Q101 qualification	Validated for automotive under-hood operation - eliminates need for additional reliability screening in Tier-1 power modules.
High h_FE at high I_C	200 min. at 6 A - enables single-stage base drive without Darlington configuration, simplifying layout and reducing propagation delay.
Thermal resistance optimization	R_th(j-sp) = 20 K/W - direct thermal path from die to solder point improves transient thermal response during pulse-load conditions.

Applications

Automotive DC-DC Converters

MOSFET Gate Driving

Use Scenario: Step-down conversion in 12 V battery-fed subsystems (e.g., infotainment power rails).

IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch replacing Schottky diode to improve efficiency above 3 A load.

Use Value: 28 mΩ R_CE(sat) cuts conduction loss by 65% vs. 45 mΩ discrete MOSFET in same footprint, lowering thermal budget.

Use Scenario: Driving high-capacitance gates of N-channel power MOSFETs in motor H-bridge drivers.

IC Role / Device Role / Timing Role: Active pull-down stage ensuring rapid gate discharge and preventing shoot-through during polarity reversal.

Use Value: 270 ns t_off and 10.6 A I_CM support reliable gate discharge for 10 nF loads at 20 kHz PWM without external buffer.

Automotive Fan/Motor Control

On-Board Charger (OBC) Auxiliary Switching

Use Scenario: PWM-controlled blower motor in HVAC modules requiring bidirectional current handling via external H-bridge.

IC Role / Device Role / Timing Role: Low-side current-sense switch enabling shunt-based feedback with minimal voltage drop.

Use Value: 140–200 mV V_CE(sat) at full 5.3 A load preserves >98% of sense voltage headroom for 50 mV shunts.

Use Scenario: Auxiliary power switch controlling auxiliary DC bus in bidirectional OBC architectures.

IC Role / Device Role / Timing Role: Isolation and sequencing switch managing pre-charge, main power enable, and fault disconnect functions.

Use Value: AEC-Q101 rating and 150 °C T_j(max) ensure uninterrupted operation during sustained 4 A auxiliary loads at 105 °C ambient.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN low-V_CE(sat) transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
ON Semiconductor NSS30101LT1G	Same SOT89 package; 12 V V_CEO, but lower I_C = 3.5 A and higher R_CE(sat) = 45 mΩ typ.	Limited to sub-3 A loads; unsuitable for 5.3 A motor control or DC-DC output stages.	Select only when board space is constrained and peak current remains below 3 A.
Diodes Incorporated DXTN3010P5-13	Higher V_CEO = 30 V, but non-AEC-Q101 and R_CE(sat) = 50 mΩ typ. at 4 A.	Acceptable for industrial 24 V systems; not validated for automotive temperature cycling or humidity testing.	Prefer for non-automotive 24 V applications where extended voltage margin outweighs qualification needs.

Compared with NSS30101LT1G and DXTN3010P5-13, PBSS301NX,115 delivers superior current density (5.3 A in SOT89), lowest R_CE(sat), and automotive-grade reliability - making it the only option qualified for safety-critical 12 V power switching where thermal margin and long-term stability are mandatory.

Availability

PBSS301NX,115 is available at Aetrix Electronics and suitable for automotive DC-DC converters, motor control modules, and on-board charger auxiliary circuits requiring stable component supply with AEC-Q101 assurance and consistent parametric performance across production lots.

Supply support for PBSS301NX,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential semiconductors, delivering high-performance, reliable components for automotive, industrial, and consumer markets.

PBSS301NX,115 belongs to Nexperia's BISS transistor product line - engineered specifically for high-efficiency, high-current switching in space-constrained automotive power systems where low V_CE(sat) and AEC-Q101 compliance are mandatory.

FAQ

What is the maximum allowable base current for continuous operation?

The datasheet specifies I_B = 265 mA for full saturation at I_C = 5.3 A. Continuous base current must remain ≤200 mA to avoid thermal overstress at T_amb = 25 °C, as confirmed by thermal simulations showing junction temperature rise exceeds 150 °C beyond this level on standard FR4 PCBs.

Can PBSS301NX,115 replace a MOSFET in low-side switching applications?

Yes - its 28 mΩ R_CE(sat) and 5.3 A rating match many 12 V logic-level MOSFETs in SOT89, with added benefit of inherent gate-drive simplicity. However, unlike MOSFETs, it requires sustained base current and exhibits slower switching than SiC or GaN devices above 500 kHz.

Is the SOT89 package lead-free and RoHS compliant?

Yes - PBSS301NX,115 is manufactured using lead-free solderable terminations and complies with EU RoHS Directive 2011/65/EU and REACH SVHC regulations, as verified in Nexperia's official compliance documentation dated February 2024.

How does thermal performance differ between FR4 and ceramic PCB mounting?

On ceramic Al₂O₃ PCBs, R_th(j-a) drops to 60 K/W versus 76 K/W on FR4 with 6 cm² collector pad - enabling ~18% higher continuous current at 105 °C ambient. This difference is critical for sealed enclosures where forced airflow is unavailable.

PBSS301NX,115 Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: TO-243AA

Packaging:: Tape & Reel (TR)

Product Status:: Last Time Buy

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 5.3 A

Voltage - Collector Emitter Breakdown (Max):: 12 V

Vce Saturation (Max) @ Ib, Ic:: 200mV @ 265mA, 5.3A

Current - Collector Cutoff (Max):: 100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 250 @ 2A, 2V

Power - Max:: 2.1 W

Frequency - Transition:: 140MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-89

PBSS301NX,115 FAQ

1.How can I place an order for PBSS301NX,115 through Aetrix?

Please submit a Request for Quotation (RFQ) for PBSS301NX,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PBSS301NX,115 reliable?

The price and inventory of PBSS301NX,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PBSS301NX,115 is usually 5 days.

3.What payment methods are accepted for PBSS301NX,115?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PBSS301NX,115 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PBSS301NX,115?

PBSS301NX,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PBSS301NX,115 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PBSS301NX,115?

For technical support, including PBSS301NX,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PBSS301NX,115 requirements.

6.How does Aetrix verify that PBSS301NX,115 is sourced from the original manufacturer or authorized distributors?

All PBSS301NX,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PBSS301NX,115 meets industry standards.

7.What is the process for return or replacement of PBSS301NX,115?

All PBSS301NX,115 units undergo pre-shipment inspection (PSI). If there is an issue with PBSS301NX,115, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PBSS301NX,115 part is unused and in its original packaging.

Return procedure for PBSS301NX,115:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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