Nexperia USA Inc. PBSS302ND,115
- Part No.:
- PBSS302ND,115
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Single Bipolar Transistors
- Package:
- SC-74, SOT-457
- Datasheet:
-
PBSS302ND,115.pdf
- Description:
- TRANS NPN 40V 4A 6-TSOP
- Quantity:
- Payment:

- Shipping:

Inventory:5,271
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Product details
Overview
PBSS302ND,115 from Nexperia is an NPN low VCE(sat) transistor in TSOP6 (SOT457) package, rated for 40 V VCEO, 4 A continuous collector current, and 15 A peak pulse current. It delivers ultra-low saturation resistance (55–75 mΩ at IC = 6 A), enabling high-efficiency power switching in compact DC-DC converters and motor drivers.
For engineers reviewing the PBSS302ND,115 datasheet, PBSS302ND,115 pinout, PBSS302ND,115 application, or PBSS302ND,115 equivalent, key selection criteria include verified VCE(sat) ≤ 300 mV at 4 A, thermal resistance as low as 113 K/W on 6 cm² FR4, and confirmed 6-pin TSOP6 layout with 4 collector terminals for parallel current handling.
Technical Context
This device operates as a discrete NPN bipolar junction transistor optimized for low-loss switching in medium-power applications. Its architecture features four collector leads and one base/emitter pair, enabling distributed current handling and reduced trace resistance in PCB layouts.
It supports pulsed operation up to 15 A (tp ≤ 1 ms) and maintains VCE(sat) ≤ 190 mV at 4 A with 400 mA base drive under pulsed conditions (δ ≤ 0.02). Thermal performance is specified across multiple mounting configurations, including ceramic (Al₂O₃) and FR4 substrates with varying copper pad areas.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 40 V - Maximum safe collector-emitter voltage with base open; defines upper rail limit in 36 V automotive or industrial power rails. |
| IC (continuous) | 4 A - Sustained current capability on standard FR4 PCB; enables direct replacement of TO-236 devices without derating. |
| RCE(sat) | 55–75 mΩ - Measured at IC = 6 A, IB = 600 mA, pulsed; directly reduces conduction loss by >40% vs. standard BJT alternatives. |
| VCE(sat) | 100–190 mV - At IC = 4 A, IB = 400 mA, pulsed; ensures <0.76 W conduction loss at full load. |
| fT | 150 MHz - Transition frequency at VCE = 10 V, IC = 0.1 A; supports fast switching in PWM frequencies up to ~10 MHz. |
| toff | 510 ns - Turn-off time under VCC = 10 V, IC = 2 A, IBoff = −0.1 A; enables efficient operation in 500 kHz–1 MHz SMPS designs. |
Pinout & Package
Package: TSOP6 (SOT457), 6-lead surface-mount plastic package with 1.3 mm profile and 0.65 mm lead pitch; optimized for reflow soldering per IPC-J-STD-020.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Collector | Primary high-current output path; electrically tied to pins 2, 5, and 6 for parallel conduction and thermal spreading. |
| 2 | Collector | Redundant collector terminal; reduces effective bond wire resistance and improves current sharing in multi-amp switching. |
| 3 | Base | Control input requiring ≥400 mA pulsed drive for full saturation at 4 A; low VBE(sat) (1.0–1.1 V) minimizes driver loss. |
| 4 | Emitter | Reference node for current sensing and feedback; isolated from collector terminals to support high-side or low-side configurations. |
| 5 | Collector | Third collector connection; enhances thermal dissipation via internal die attach to exposed copper land in PCB footprint. |
| 6 | Collector | Fourth collector terminal; enables symmetric PCB layout with dual-sided copper pour for <113 K/W Rth(j-a) on 6 cm² FR4. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low VCE(sat) | 100–190 mV at 4 A enables <0.76 W conduction loss, reducing heatsink requirements in space-constrained 5–24 V systems. |
| Quad-collector topology | Four collector terminals distribute current and lower effective package resistance, improving reliability under repetitive surge loads. |
| High peak current rating | 15 A single-pulse capability (tp ≤ 1 ms) supports motor startup surges and capacitor charging transients without secondary protection. |
| Optimized thermal interface | Thermal resistance as low as 113 K/W on 6 cm² FR4 allows 1.1 W continuous dissipation without forced airflow in industrial ambient (≤70 °C). |
Applications
| Motor Control Circuit | USB-C PD Power Path |
|---|---|
|
Use Scenario: Driving 12 V brushed DC fans or small stepper coil phases in HVAC or server cooling modules. IC Role / Device Role / Timing Role: Low-side power switch controlling current flow to inductive load; handles 4 A steady-state and 15 A startup peaks. Use Value: Sub-200 mV VCE(sat) limits temperature rise to <65 °C at 4 A on 2-layer FR4, eliminating need for external heatsinks. |
Use Scenario: Secondary-side synchronous rectification or load switching in 20–60 W USB-C Power Delivery adapters. IC Role / Device Role / Timing Role: High-efficiency pass transistor in constant-current/constant-voltage regulation loop; switches at 300–500 kHz. Use Value: 510 ns toff and 150 MHz fT ensure clean turn-off during fast transient response, minimizing cross-conduction loss. |
| DC-DC Buck Converter | MOSFET Gate Driver Stage |
|
Use Scenario: Main switching element in 5–12 V input, 3.3–5 V output buck regulators for FPGA or microcontroller power rails. IC Role / Device Role / Timing Role: Low-side switch in non-synchronous buck topology; conducts during freewheeling phase. Use Value: 75 mΩ RCE(sat) yields <1.2 W loss at 4 A, enabling >92% efficiency at 2 A load without complex gate drive circuitry. |
Use Scenario: Active pull-down stage in high-current MOSFET gate drivers for industrial inverters or servo amplifiers. IC Role / Device Role / Timing Role: Fast-turn-off clamp for Miller capacitance discharge; sinks ≥2 A peak gate current during transition. Use Value: 390 ns storage time (ts) and 120 ns fall time (tf) enable sub-600 ns total turn-off, critical for <100 ns dead-time control. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar NPN low VCE(sat) transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ON Semiconductor NSS30200DZT1G | VCEO = 30 V, IC = 3.5 A, RCE(sat) = 85 mΩ @ 3.5 A - lower voltage rating and higher saturation resistance. | Limited to ≤24 V systems; requires larger gate drive due to higher VBE(sat) (~1.2 V). | Select when board space permits SO-8 and system voltage is capped at 24 V. |
| Diodes Incorporated DXT30200DE6327XTSA1 | VCEO = 40 V, IC = 4 A, RCE(sat) = 90 mΩ @ 4 A - 20% higher saturation resistance; no quad-collector layout. | Higher conduction loss increases thermal stress on 2-layer PCBs; lacks collector-terminal redundancy. | Choose only if TSOP6 footprint compatibility is not required and thermal margin exceeds 15 °C. |
Compared with NSS30200DZT1G and DXT30200DE6327XTSA1, PBSS302ND,115 delivers superior current density (4 A in TSOP6), lowest RCE(sat), and mechanical robustness via four collector terminals-making it optimal for thermally constrained, high-reliability 36 V industrial power stages.
Availability
PBSS302ND,115 is available at Aetrix Electronics and suitable for motor control circuits, USB-C PD power paths, DC-DC buck converters, and MOSFET gate driver stages requiring stable component supply and consistent low-VCE(sat) performance across production batches.
Supply support for PBSS302ND,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on essential efficiency technologies, delivering high-performance logic, discrete, and MOSFET solutions for automotive, industrial, and consumer markets.
PBSS302ND,115 belongs to Nexperia's "Low VCE(sat) Transistor" product line, engineered specifically for high-current, low-loss switching in space- and thermally-constrained power management applications.
FAQ
What is the maximum continuous power dissipation for PBSS302ND,115 on a standard FR4 PCB?
On a standard FR4 PCB (single-sided copper, tin-plated, no extended pad), PBSS302ND,115 has a Ptot rating of 360 mW at Tamb = 25 °C. This value scales with ambient temperature per the derating curve in Figure 1, reaching zero at ~125 °C ambient. For higher power, use extended copper pads (e.g., 6 cm²) to achieve up to 2.5 W under pulsed conditions.
Can PBSS302ND,115 be used in high-frequency switching applications above 1 MHz?
Yes-its 150 MHz fT and 510 ns toff support reliable operation up to ~1 MHz in hard-switched topologies. However, switching losses increase significantly above 500 kHz due to finite storage time (390 ns); for >1 MHz designs, consider pairing with active base clamping or using complementary MOSFETs where gate charge is lower.
Is PBSS302ND,115 automotive-qualified?
No-this part is explicitly marked as non-automotive qualified per Revision History (v.4, October 2024). It lacks AEC-Q101 qualification, automotive-grade screening, and extended temperature validation. For automotive use, Nexperia offers the -Q qualified variant PBSS302ND,115-Q, which undergoes additional stress testing and lot traceability.
How does the quad-collector configuration affect PCB layout and thermal design?
The four collector terminals (pins 1, 2, 5, 6) must be routed to a common large copper pour-ideally ≥6 cm²-to realize the 113 K/W Rth(j-a) spec. Splitting collectors across separate traces defeats the thermal benefit. The layout should mirror the footprint in Figure 16, with solder paste apertures matching the 0.7 mm × 0.8 mm pads for all six leads.
PBSS302ND,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- SC-74, SOT-457
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Transistor Type:
- NPN
- Current - Collector (Ic) (Max):
- 4 A
- Voltage - Collector Emitter Breakdown (Max):
- 40 V
- Vce Saturation (Max) @ Ib, Ic:
- 450mV @ 600mA, 6A
- Current - Collector Cutoff (Max):
- 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 250 @ 2A, 2V
- Power - Max:
- 1.1 W
- Frequency - Transition:
- 150MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q100
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-TSOP
PBSS302ND,115 FAQ
1.How can I place an order for PBSS302ND,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for PBSS302ND,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PBSS302ND,115 reliable?
The price and inventory of PBSS302ND,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PBSS302ND,115 is usually 5 days.
3.What payment methods are accepted for PBSS302ND,115?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PBSS302ND,115 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PBSS302ND,115?
PBSS302ND,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PBSS302ND,115 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PBSS302ND,115?
For technical support, including PBSS302ND,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PBSS302ND,115 requirements.
6.How does Aetrix verify that PBSS302ND,115 is sourced from the original manufacturer or authorized distributors?
All PBSS302ND,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PBSS302ND,115 meets industry standards.
7.What is the process for return or replacement of PBSS302ND,115?
All PBSS302ND,115 units undergo pre-shipment inspection (PSI). If there is an issue with PBSS302ND,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PBSS302ND,115 part is unused and in its original packaging.
Return procedure for PBSS302ND,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
PBSS302ND,115 Tags

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Diodes Incorporated

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Nexperia USA Inc.

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