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Nexperia USA Inc. PBSS302ND-QH

Part No.:
PBSS302ND-QH
Manufacturer:
Nexperia USA Inc.
Category:
Single Bipolar Transistors
Package:
SC-74, SOT-457
Datasheet:
AetrixPBSS302ND-QH.pdf
Description:
TRANS NPN 40V 4A 6-TSOP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,394

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Product details

Overview

PBSS302ND-QH from Nexperia is an AEC-Q101-qualified NPN low VCEsat transistor in TSOP6 (SOT457) package, designed for high-efficiency switching in automotive power management. It delivers 4 A continuous collector current, 40 V VCEO, and ultra-low 55–75 mΩ RCEsat at 6 A/600 mA drive - enabling reduced conduction loss in DC-DC converters and MOSFET gate drivers.

For engineers reviewing the PBSS302ND-QH datasheet, PBSS302ND-QH pinout, PBSS302ND-QH application, or PBSS302ND-QH equivalent, this device is selected for thermally constrained automotive subsystems requiring stable low-saturation switching with validated junction temperature up to 150 °C and pulsed peak current capability of 15 A.

Technical Context

This NPN transistor operates as a high-current, low-loss switch with fixed polarity and no integrated biasing or protection circuitry. Its design centers on minimizing VCEsat and RCEsat under high IC/IB conditions (IC/IB = 10–20), supported by thermal resistance as low as 113 K/W on 6 cm² FR4 copper pad.

Switching performance is characterized by 64 ns turn-on time and 510 ns turn-off time under 10 V VCC, 2 A IC, ±0.1 A base drive - optimized for medium-frequency (<1 MHz) power control where propagation delay and storage time (390 ns) impact efficiency.

Key Specifications

Parameter Value and Actual Design Meaning
VCEO 40 V - Maximum allowable collector-emitter voltage with base open; defines safe blocking capability in 12 V/24 V automotive systems.
IC (continuous) 4 A - Sustained collector current at Tamb ≤ 25 °C on ceramic PCB; enables direct driving of small motors or backlight inverters without heatsinking.
RCEsat 55–75 mΩ - Measured at IC = 6 A, IB = 600 mA, pulsed; determines I²R conduction loss and thermal rise in high-duty-cycle operation.
VCEsat 330–450 mV - Saturation voltage at IC = 4 A, IB = 400 mA; directly sets minimum on-state voltage drop and associated power dissipation.
hFE 50–100 - DC current gain at IC = 6 A, VCE = 2 V; informs required base drive strength and driver stage sizing.
fT 150 MHz - Transition frequency at VCE = 10 V, IC = 0.1 A; indicates usable bandwidth for fast-switching applications up to ~10–20 MHz.
toff 510 ns - Total turn-off time under defined test conditions; constrains maximum practical switching frequency before losses dominate.

Pinout & Package

TSOP6 (SOT457) surface-mount plastic package with 6 leads, 1.3 mm profile, and standard footprint compatible with reflow soldering per IPC-7095. Thermal pad layout supports 6 cm² copper area for enhanced heat dissipation.

Pin/Terminal Circuit Role Design Meaning
1 Collector Primary high-current output node; internally connected to pins 2, 5, and 6 for parallel current handling and improved thermal spreading.
2 Collector Redundant collector terminal - electrically identical to pin 1; used to reduce bond wire inductance and improve current sharing.
3 Base Control input requiring ~400 mA drive at 4 A IC; low-impedance path optimized for fast switching with minimal Miller effect.
4 Emiter Reference node for emitter-follower or common-emitter configurations; isolated from collector terminals to prevent latch-up in inductive loads.
5 Collector Third collector connection - enhances thermal conductivity and reduces effective Rth(j-sp) to 45 K/W to solder point.
6 Collector Fourth collector terminal - provides mechanical stability and additional current-carrying capacity in high-reliability automotive layouts.

Key Features

Feature Design Value
Ultra-low RCEsat 55 mΩ typical at 6 A - reduces conduction loss by >40% vs. standard bipolar transistors, lowering thermal load in space-constrained modules.
AEC-Q101 qualification Validated for automotive-grade reliability including HTOL, temperature cycling, and ESD - enables use in engine control, body electronics, and ADAS power stages.
Multi-collector pin architecture Four collector terminals (pins 1, 2, 5, 6) - lowers effective package inductance and improves current distribution, critical for EMI-sensitive motor drives.
High peak current rating 15 A single-pulse (tp ≤ 1 ms) - supports surge handling in fan startup, solenoid actuation, and transient load conditions without derating.
Low VBEsat 1.0 V max at IC = 4 A - minimizes base drive power and allows compatibility with 3.3 V or 5 V logic-level controllers without level-shifting.

Applications

Automotive DC-DC Converters MOSFET Gate Driving

Use Scenario: Step-down conversion in 12 V to 5 V/3.3 V power rails for infotainment and ADAS ECUs.

IC Role / Device Role / Timing Role: Primary switching transistor in synchronous buck topology, operating at 200–500 kHz with forced PWM mode.

Use Value: 330 mV VCEsat limits conduction loss to <1.3 W at 4 A, reducing thermal design burden versus higher-VCEsat alternatives.

Use Scenario: High-side or low-side gate driver for 40 V-rated N-channel MOSFETs in battery disconnect and load switching.

IC Role / Device Role / Timing Role: Current-amplifying switch delivering ≥400 mA peak base/gate current with <64 ns turn-on for fast MOSFET transition.

Use Value: 510 ns toff ensures clean gate discharge during dead-time control, preventing shoot-through in half-bridge configurations.

Thin-Film Transistor (TFT) Backlight Inverters Automotive Fan/Motor Control

Use Scenario: High-frequency AC generation for LED backlight drivers in instrument clusters and center displays.

IC Role / Device Role / Timing Role: Switching element in Royer or push-pull oscillator circuits operating at 50–200 kHz.

Use Value: 150 MHz fT supports stable oscillation at 200 kHz with margin for component aging and temperature drift.

Use Scenario: PWM-controlled 12 V blower motor in HVAC systems with duty cycle up to 95%.

IC Role / Device Role / Timing Role: Low-loss power switch handling 3–4 A continuous current with intermittent 10 A surges during startup.

Use Value: 113 K/W Rth(j-a) on 6 cm² FR4 enables operation at 100 °C ambient without external heatsink - meeting ISO 16750-4 requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN low VCEsat transistor applications.

Alternative Part Technical Difference Application Difference Selection Advice
ON Semiconductor NSS30201MR6T1G Higher VCEO (60 V), lower IC (2 A), RCEsat = 90 mΩ @ 2 A - less efficient at 4 A load. Preferred in 48 V mild-hybrid systems; unsuitable for 4 A continuous automotive motor loads. Select when higher voltage margin is needed over current capability; verify thermal design for same PCB area.
Diodes Incorporated DXTN3020P5-13 Same SOT457 package, but RCEsat = 105 mΩ @ 4 A and no AEC-Q101 qualification - higher conduction loss and unverified automotive reliability. Acceptable for industrial non-automotive DC-DC; not approved for automotive safety-critical functions. Use only in cost-sensitive non-automotive designs; avoid where AEC-Q101 compliance is contractually required.

Compared with NSS30201MR6T1G and DXTN3020P5-13, PBSS302ND-QH uniquely balances 4 A continuous rating, 55 mΩ RCEsat, and AEC-Q101 qualification - making it the only option among the three qualified for sustained 12 V automotive power switching with thermal margin on standard FR4.

Availability

PBSS302ND-QH is available at Aetrix Electronics and suitable for automotive power management, DC-DC conversion, and MOSFET gate driving requiring stable component supply across production lifecycles.

Supply support for PBSS302ND-QH includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability essential semiconductors - delivering discrete, logic, and MOSFET solutions with automotive-grade quality and scalability.

PBSS302ND-QH belongs to Nexperia's AEC-Q101-qualified low VCEsat transistor family, engineered specifically for thermally demanding automotive power switching applications where efficiency, robustness, and qualification integrity are mandatory.

FAQ

What is the maximum allowable junction temperature for PBSS302ND-QH?

The absolute maximum junction temperature (Tj) is 150 °C, as specified in the limiting values table. Operation at this temperature requires strict adherence to thermal derating curves - for example, total power dissipation must be limited to 500 mW on standard FR4 at 100 °C ambient to maintain safe Tj.

Can PBSS302ND-QH replace a MOSFET in low-side switching applications?

No - PBSS302ND-QH is a bipolar NPN transistor requiring continuous base current drive, unlike MOSFETs that use voltage-controlled gates. While it can perform low-side switching, its 400 mA base drive demand and 330 mV VCEsat make it less efficient than logic-level MOSFETs above 1 A; it excels where bipolar characteristics (e.g., ruggedness, SOA, cost) are prioritized.

Is the TSOP6 (SOT457) package lead-free and RoHS compliant?

Yes - PBSS302ND-QH uses a lead-free, halogen-free, RoHS-compliant TSOP6 package per Nexperia's product compliance documentation. The device meets JEDEC J-STD-020 moisture sensitivity level MSL3 and is qualified for standard reflow profiles including peak temperatures up to 260 °C.

How does the multi-collector pin configuration affect PCB layout?

The four collector pins (1, 2, 5, 6) must be routed to a common copper pour with ≥6 cm² area for optimal thermal performance. Splitting or isolating these pins increases Rth(j-a) by up to 2× and risks current imbalance - Nexperia's recommended footprint uses a single large thermal pad connected to all four collector lands.

PBSS302ND-QH Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
-
Package/Case:
SC-74, SOT-457
Packaging:
Tape & Reel (TR)
Product Status:
Active
Transistor Type:
NPN
Current - Collector (Ic) (Max):
4 A
Voltage - Collector Emitter Breakdown (Max):
40 V
Vce Saturation (Max) @ Ib, Ic:
450mV @ 600mA, 6A
Current - Collector Cutoff (Max):
100nA
DC Current Gain (hFE) (Min) @ Ic, Vce:
300 @ 1A, 2V
Power - Max:
360 mW
Frequency - Transition:
150MHz
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
6-TSOP

PBSS302ND-QH FAQ

1.How can I place an order for PBSS302ND-QH through Aetrix?

Please submit a Request for Quotation (RFQ) for PBSS302ND-QH on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PBSS302ND-QH reliable?

The price and inventory of PBSS302ND-QH are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PBSS302ND-QH is usually 5 days.

3.What payment methods are accepted for PBSS302ND-QH?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PBSS302ND-QH transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PBSS302ND-QH?

PBSS302ND-QH orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PBSS302ND-QH order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PBSS302ND-QH?

For technical support, including PBSS302ND-QH datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PBSS302ND-QH requirements.

6.How does Aetrix verify that PBSS302ND-QH is sourced from the original manufacturer or authorized distributors?

All PBSS302ND-QH products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PBSS302ND-QH meets industry standards.

7.What is the process for return or replacement of PBSS302ND-QH?

All PBSS302ND-QH units undergo pre-shipment inspection (PSI). If there is an issue with PBSS302ND-QH, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PBSS302ND-QH part is unused and in its original packaging.

Return procedure for PBSS302ND-QH:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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