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Nexperia USA Inc. PBSS302NZ,135

Part No.:
PBSS302NZ,135
Manufacturer:
Nexperia USA Inc.
Category:
Single Bipolar Transistors
Package:
TO-261-4, TO-261AA
Datasheet:
AetrixPBSS302NZ,135.pdf
Description:
TRANS NPN 20V 5.8A SOT-223
Quantity:
Payment:
Payment
Shipping:
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Inventory:7,294

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Product details

Overview

PBSS302NZ from Nexperia is an NPN low VCE(sat) transistor in SOT223 (SC-73) package, designed for high-efficiency switching in power-constrained applications. It delivers 5.8 A continuous collector current, 20 V VCEO, and typ. 30 mΩ RCE(sat) at 4 A/200 mA drive - enabling compact DC-DC converters and MOSFET gate drivers with minimal conduction loss.

For engineers reviewing the PBSS302NZ datasheet, PBSS302NZ pinout, PBSS302NZ application, or PBSS302NZ equivalent, this page provides verified electrical parameters, thermal derating curves, switching timing data (ton = 55 ns, toff = 335 ns), package footprint details, and validated alternatives for high-current, low-saturation-voltage bipolar switching roles.

Technical Context

This device operates as a high-gain, low-saturation-voltage NPN switch optimized for pulsed and continuous conduction in medium-power linear and switching topologies. Its hFE ranges from 200–350 at IC = 7 A, and VCE(sat) remains ≤250 mV up to 5.8 A with 290 mA base drive - confirming robust saturation under high-current load conditions.

Thermal performance is defined across three mounting configurations: Rth(j-a) = 179 K/W (FR4 standard), 74 K/W (FR4 with 6 cm² collector pad), and 63 K/W (ceramic Al₂O₃). Junction-to-solder-point resistance is 15 K/W, supporting direct thermal coupling to PCB copper for sustained 1.7 W dissipation.

Key Specifications

Parameter Value and Actual Design Meaning
VCEO 20 V - Maximum safe collector-emitter voltage with open base; defines upper rail limit in 12 V and 15 V systems.
IC 5.8 A continuous - Sustained current-handling capability without thermal runaway on FR4 with standard footprint.
RCE(sat) 30–43 mΩ at IC = 4 A / IB = 200 mA - Enables <0.7 W conduction loss at 4 A, reducing heatsink requirements.
ton/toff 55 ns / 335 ns - Fast enough for >1 MHz switching in synchronous buck stages when paired with appropriate gate drive.
hFE 200–350 at IC = 7 A - Ensures stable current amplification in high-current linear regulators or active OR-ing circuits.
Ptot 2 W on ceramic PCB - Supports higher ambient operation in space-constrained industrial control modules.

Pinout & Package

SOT223 (SC-73) surface-mount plastic package with 4 leads, 2.3 mm pitch, and integrated heatsink tab (lead 4 is collector, electrically tied to lead 2). Dimensions: 6.5 mm × 3.5 mm × 1.65 mm body; thermal pad optimized for soldered copper area.

Pin/Terminal Circuit Role Design Meaning
1 Base (B) Control input requiring ~290 mA for full saturation at 5.8 A; low-impedance drive needed due to high IC/IB ratio (~20).
2 Collector (C) Main power output terminal; electrically connected to pin 4 for enhanced thermal and current handling.
3 Emiter (E) Reference node for load return path; must be low-inductance connection to minimize switching noise.
4 Collector (C) Secondary collector terminal - bonded directly to internal die heatsink; mandatory for thermal performance and current sharing.

Key Features

Feature Design Value
Low VCE(sat) ≤250 mV at 5.8 A enables <1.5 W conduction loss - reduces thermal stress in fan drivers and battery chargers.
High IC capability 5.8 A continuous rating supports single-transistor 25 W switching stages without paralleling devices.
Enhanced hFE at high IC 350 typ. at 7 A ensures reliable turn-on margin even with aging or temperature drift in power supply feedback paths.
Optimized thermal pad Pin 4 collector tie enables 63 K/W Rth(j-a) on ceramic PCB - critical for sealed industrial enclosures with no forced airflow.

Applications

DC-to-DC Conversion MOSFET Gate Driving

Use Scenario: Synchronous rectifier or main switch in 12 V input, 3.3–5 V output buck converter for embedded controllers.

IC Role / Device Role / Timing Role: NPN power switch controlling energy transfer during high-side or low-side conduction phase.

Use Value: 30 mΩ RCE(sat) cuts conduction loss by >40% vs. conventional transistors, improving efficiency from 88% to 92% at 4 A load.

Use Scenario: Level-shifted gate driver for N-channel MOSFETs in motor control H-bridges.

IC Role / Device Role / Timing Role: Fast-switching bipolar pull-down stage delivering 200–400 mA peak current to discharge gate capacitance.

Use Value: 55 ns ton and 335 ns toff support <1 MHz PWM frequencies while maintaining clean gate waveforms and minimizing shoot-through risk.

Charging Circuits Power Switches (e.g., fans)

Use Scenario: Constant-current switch in USB PD or Li-ion battery charging path with thermal foldback protection.

IC Role / Device Role / Timing Role: Linear or switched pass element regulating charge current via base voltage control.

Use Value: High hFE (350 typ.) allows precise analog current regulation with low base drive error, reducing sensing resistor tolerance impact.

Use Scenario: On/off control of 12 V DC cooling fans in network switches and industrial PLCs.

IC Role / Device Role / Timing Role: Medium-power discrete switch replacing mechanical relays or higher-cost MOSFET solutions.

Use Value: 5.8 A rating handles 3× fan inrush current (up to 11.6 A peak), eliminating need for external surge suppression components.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN low VCE(sat) transistor applications.

Alternative Part Technical Difference Application Difference Selection Advice
ON Semiconductor NSS30201MR6T1G 20 V VCEO, 4.5 A IC, 45 mΩ RCE(sat) - lower current rating, higher saturation resistance. Less suitable for >4 A continuous loads; better fit for space-constrained 3.3 V logic-level driven designs. Select when board area is prioritized over current headroom and thermal margin is tightly controlled.
Diodes Incorporated DXT3020P5-13 20 V VCEO, 5 A IC, 35 mΩ RCE(sat), SOT223-4 - similar footprint but lower hFE (150–250 at 5 A). Requires higher base drive current for equivalent saturation; less margin in analog current regulation. Prefer when cost sensitivity outweighs need for high hFE stability across temperature in closed-loop systems.

Compared with PBSS302NZ, NSS30201MR6T1G trades 1.3 A current capacity and 15 mΩ RCE(sat) for smaller die size, while DXT3020P5-13 offers comparable RCE(sat) but reduced gain margin - making PBSS302NZ optimal for thermally demanding, high-precision current switching where both low loss and consistent hFE are required.

Availability

PBSS302NZ is available at Aetrix Electronics and suitable for DC-DC conversion, MOSFET gate driving, and charging circuits requiring stable component supply, long-term manufacturability, and traceable sourcing for industrial and embedded OEM programs.

Supply support for PBSS302NZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified and industrial-grade components.

PBSS302NZ belongs to Nexperia's "Low VCE(sat) Transistor" product line, engineered specifically for efficiency-critical power switching in consumer, industrial, and computing applications where thermal density and conduction loss dominate design constraints.

FAQ

What is the maximum allowable base current for PBSS302NZ?

The datasheet specifies IB = 290 mA for full saturation at IC = 5.8 A. Absolute maximum base current is not explicitly rated, but IB must remain within the safe operating area defined by Ptot limits and thermal resistance. At 25 °C ambient, 290 mA is well within thermal capability when using the collector pad for heat dissipation.

Can PBSS302NZ replace a MOSFET in low-side switching applications?

Yes - it functions effectively as a low-side switch up to 5.8 A with fast turn-on/turn-off times. However, unlike MOSFETs, it requires continuous base current drive and exhibits VCE(sat) rather than RDS(on). Use is preferred where bipolar gain simplifies drive circuitry or where cost and footprint favor SOT223 over SO-8 MOSFETs.

Is PBSS302NZ qualified for automotive applications?

No. Per Revision History v.4 (20241008), PBSS302NZ was changed to non-automotive qualification. Nexperia offers automotive-qualified alternatives (e.g., PBSS302NZ-Q) with AEC-Q101 testing and extended temperature validation - these must be selected for vehicle-mounted systems.

How does PCB layout affect PBSS302NZ's thermal performance?

Thermal resistance varies significantly with layout: Rth(j-a) drops from 179 K/W (standard FR4) to 63 K/W (ceramic Al₂O₃) or 74 K/W (FR4 with 6 cm² collector pad). To achieve rated 2 W dissipation, the collector pad (pins 2 and 4) must be connected to ≥6 cm² of 2 oz copper with multiple thermal vias - otherwise derating below 1.7 W is required.

PBSS302NZ,135 Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
-
Package/Case:
TO-261-4, TO-261AA
Packaging:
Tape & Reel (TR)
Product Status:
Active
Transistor Type:
NPN
Current - Collector (Ic) (Max):
5.8 A
Voltage - Collector Emitter Breakdown (Max):
20 V
Vce Saturation (Max) @ Ib, Ic:
250mV @ 290mA, 5.8A
Current - Collector Cutoff (Max):
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:
250 @ 2A, 2V
Power - Max:
2 W
Frequency - Transition:
140MHz
Operating Temperature:
150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q100
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-223

PBSS302NZ,135 FAQ

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Please submit a Request for Quotation (RFQ) for PBSS302NZ,135 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PBSS302NZ,135 reliable?

The price and inventory of PBSS302NZ,135 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PBSS302NZ,135 is usually 5 days.

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Once your PBSS302NZ,135 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PBSS302NZ,135?

For technical support, including PBSS302NZ,135 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PBSS302NZ,135 requirements.

6.How does Aetrix verify that PBSS302NZ,135 is sourced from the original manufacturer or authorized distributors?

All PBSS302NZ,135 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PBSS302NZ,135 meets industry standards.

7.What is the process for return or replacement of PBSS302NZ,135?

All PBSS302NZ,135 units undergo pre-shipment inspection (PSI). If there is an issue with PBSS302NZ,135, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PBSS302NZ,135 part is unused and in its original packaging.

Return procedure for PBSS302NZ,135:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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