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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

Nexperia USA Inc. PBSS302PD,115

Name: PBSS302PD,115
Brand: Nexperia USA Inc.
SKU: PBSS302PD,115
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PBSS302PD,115

Manufacturer:: Nexperia USA Inc.

Category:: Single Bipolar Transistors

Package:: SC-74, SOT-457

Datasheet:: PBSS302PD,115.pdf

Description:: TRANS PNP 40V 4A 6-TSOP

Quantity:: RFQ Add To RFQ list

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Inventory:4,750

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Product details

Overview

PBSS302PD,115 from Nexperia is a PNP low V_CEsat Breakthrough In Small Signal (BISS) transistor in SOT457 (SC-74) package, designed for high-efficiency power switching in compact DC-DC converters and MOSFET gate drivers. It delivers −40 V V_CEO, −4 A continuous I_C, 55–75 mΩ R_CEsat at −6 A/−600 mA, and operates up to 150 °C junction temperature - enabling robust thermal performance in motor control and TFT backlight inverters.

For engineers reviewing the PBSS302PD,115 datasheet, PBSS302PD,115 pinout, PBSS302PD,115 application, or PBSS302PD,115 equivalent, key selection criteria include verified low saturation resistance, dual-collector thermal path design, pulsed current capability up to −15 A, and compatibility with FR4 PCB layouts using standard or extended collector pads.

Technical Context

This BISS transistor uses a proprietary epitaxial structure to achieve ultra-low V_CEsat and R_CEsat while maintaining high h_FE (≥200 at −0.5 A). Its six-terminal SOT457 package integrates four collector leads (pins 1,2,5,6) for enhanced current handling and thermal dissipation - distinct from conventional 3-pin transistors.

Switching behavior is characterized by t_on = 55 ns and t_off = 321 ns under −10 V V_CC, −2 A I_C, and ±0.1 A base drive, supporting high-frequency operation in synchronous rectification and PWM-driven power stages without requiring external snubbers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	−40 V: Maximum safe collector-emitter voltage with open base; defines blocking capability in high-side switch configurations.
I_C (continuous)	−4 A: Continuous DC current rating at T_amb ≤25 °C on ceramic PCB; supports sustained load switching in battery-powered systems.
R_CEsat	55–75 mΩ at −6 A/−600 mA: Low conduction loss enables >95% efficiency in 12 V input DC-DC stages with minimal heatsinking.
h_FE	≥200 at −0.5 A: High DC current gain reduces required base drive current, easing microcontroller GPIO interface design.
t_off	321 ns: Fast turn-off time minimizes cross-conduction losses in half-bridge topologies operating above 100 kHz.
T_j max	150 °C: Maximum junction temperature allows operation in sealed industrial enclosures without active cooling.
P_tot (FR4, 6 cm² pad)	2.5 W: Total power dissipation with optimized PCB copper area; enables 1.1 W continuous operation on standard FR4 without thermal vias.

Pinout & Package

Package: SOT457 (SC-74), surface-mount plastic package with six leads and integrated thermal path via four collector terminals.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 5, 6	Collector	Four parallel collector connections reduce bond wire inductance and distribute current, lowering effective R_CEsat and improving thermal spreading.
3	Base	Single base terminal for standard current-limited drive; compatible with 3.3 V/5 V logic-level microcontrollers via series resistor.
4	Emitter	Common emitter reference point; connects to ground or low-side return path in high-side switch applications.

Key Features

Feature	Design Value
Ultra-low R_CEsat	55–75 mΩ at −6 A enables <0.3 V drop in 5 A load switches, reducing heat generation by >40% vs. standard PNP transistors.
Dual thermal path layout	Four collector pins + large solder pad footprint provide R_th(j-a) as low as 113 K/W (FR4, 6 cm²), eliminating need for external heatsinks.
High peak current capability	−15 A single-pulse rating supports surge currents in motor startup and capacitor charging circuits without device failure.
Wide temperature operation	Specified from −65 °C to +150 °C ambient ensures reliability in automotive under-hood and industrial outdoor environments.
Low V_BEsat	−0.84 to −1.1 V at −4 A simplifies base drive design and reduces power loss in driver stage compared to conventional bipolar devices.

Applications

Motor Control Switching

DC-DC Converter Synchronous Rectifier

Use Scenario: Driving brushed DC motors in portable power tools with PWM frequencies up to 20 kHz.

IC Role / Device Role / Timing Role: High-side PNP switch controlling motor supply rail; handles bidirectional current during regenerative braking.

Use Value: 55 mΩ R_CEsat limits conduction loss to <1.5 W at 5 A, enabling fanless enclosure design and extending battery runtime.

Use Scenario: Secondary-side synchronous rectification in isolated 12 V → 3.3 V flyback converters for industrial IoT gateways.

IC Role / Device Role / Timing Role: Low-loss replacement for Schottky diodes; driven by transformer-coupled gate signal synchronized to primary switch.

Use Value: −320 mV V_CEsat at −4 A cuts rectifier loss by 60% vs. 40 V/5 A Schottky, raising conversion efficiency from 82% to 89%.

TFT LCD Backlight Inverter

MOSFET Gate Driver Stage

Use Scenario: High-voltage AC generation for CCFL or LED backlight strings in medical display panels.

IC Role / Device Role / Timing Role: Fast-switching PNP transistor in resonant half-bridge output stage; commutates at 50–100 kHz.

Use Value: 321 ns t_off prevents shoot-through during dead-time transitions, ensuring stable lamp ignition and flicker-free operation.

Use Scenario: Level-shifting and current amplification for driving high-capacitance N-channel MOSFETs in 24 V industrial PLC outputs.

IC Role / Device Role / Timing Role: Active pull-down transistor in totem-pole gate driver; sinks ≥0.8 A peak base current during turn-off.

Use Value: −1.1 V V_BEsat at −4 A ensures full MOSFET enhancement even with 3.3 V MCU outputs, reducing gate drive loop inductance.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP low-V_CEsat transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMT3005LPSQ-13	−30 V V_CEO, −5 A I_C, 45 mΩ R_CEsat; smaller DFN2020-6 package with no exposed collector pad.	Limited to ≤30 V systems; lower thermal mass restricts pulsed operation to <10 ms duty cycles.	Select when board space is critical and voltage stress remains below 25 V; verify PCB thermal relief for sustained 4 A loads.
BC807-40,115	−45 V V_CEO, −500 mA I_C, 300 mΩ R_CEsat; standard SOT23-3 package with single collector lead.	Insufficient current rating for motor or converter use; suitable only for signal-level switching or bias networks.	Use only for low-power logic interfacing or sensor conditioning where <100 mA load current suffices.

Compared with DMTC3005LPSQ-13 and BC807-40,115, PBSS302PD,115 uniquely balances −40 V blocking, −4 A continuous current, and sub-75 mΩ R_CEsat in a thermally optimized 6-lead package - making it the only viable option for compact, high-efficiency 12–24 V power switching without derating.

Availability

PBSS302PD,115 is available at Aetrix Electronics and suitable for motor control, DC-DC conversion, and TFT backlight inverter designs requiring stable component supply across automotive, industrial, and computing end markets.

Supply support for PBSS302PD,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global leader in discrete, logic, and PowerMOS semiconductors, formed in 2017 from the former NXP Standard Products division.

PBSS302PD,115 belongs to Nexperia's BISS transistor product line, engineered specifically for high-efficiency, high-current switching in space-constrained power management applications where thermal performance and low conduction loss are critical.

FAQ

What is the maximum allowable base current for continuous operation?

The absolute maximum continuous base current (I_B) is −0.8 A per the datasheet limiting values table. Operation beyond this risks metallization electromigration and long-term parameter drift. For reliable 4 A collector current, a base drive of −400 mA (h_FE ≈ 10) is recommended, staying well within the −0.8 A limit and providing margin for temperature-induced h_FE degradation.

Can PBSS302PD,115 be used in linear regulator applications?

No - PBSS302PD,115 is not characterized or rated for linear-mode operation. Its R_CEsat and thermal resistance specifications assume saturated switching conditions. Linear operation would exceed the 2.5 W P_tot limit at moderate V_CE and I_C, risking thermal runaway due to positive temperature coefficient of V_CEsat. Use dedicated linear pass transistors instead.

How does the four-collector pin configuration affect PCB layout?

The four collector pins (1,2,5,6) must be routed to a common copper pour with minimum trace width of 1.5 mm and direct connection to internal ground/power planes. This configuration requires a custom footprint matching the SOT457 mechanical drawing - especially the 3.1 mm × 2.7 mm body and 0.95 mm pin pitch - to ensure uniform current sharing and avoid localized heating at any single bond wire.

Is PBSS302PD,115 compliant with AEC-Q101 for automotive use?

PBSS302PD,115 is not AEC-Q101 qualified. While its −65 °C to +150 °C operating range meets automotive ambient requirements, Nexperia's official qualification documentation confirms only specific variants (e.g., PBSS302PD-Q) carry AEC-Q101 certification. For automotive applications, consult Nexperia's qualified parts list and specify the -Q suffix variant.

PBSS302PD,115 Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: SC-74, SOT-457

Packaging:: Tape & Reel (TR)

Product Status:: Active

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 4 A

Voltage - Collector Emitter Breakdown (Max):: 40 V

Vce Saturation (Max) @ Ib, Ic:: 450mV @ 600mA, 6A

Current - Collector Cutoff (Max):: 100nA

DC Current Gain (hFE) (Min) @ Ic, Vce:: 175 @ 2A, 2V

Power - Max:: 1.1 W

Frequency - Transition:: 110MHz

Operating Temperature:: 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q100

Mounting Type:: Surface Mount

Supplier Device Package:: 6-TSOP

PBSS302PD,115 FAQ

1.How can I place an order for PBSS302PD,115 through Aetrix?

Please submit a Request for Quotation (RFQ) for PBSS302PD,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PBSS302PD,115 reliable?

The price and inventory of PBSS302PD,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PBSS302PD,115 is usually 5 days.

3.What payment methods are accepted for PBSS302PD,115?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PBSS302PD,115 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PBSS302PD,115?

PBSS302PD,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PBSS302PD,115 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PBSS302PD,115?

For technical support, including PBSS302PD,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PBSS302PD,115 requirements.

6.How does Aetrix verify that PBSS302PD,115 is sourced from the original manufacturer or authorized distributors?

All PBSS302PD,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PBSS302PD,115 meets industry standards.

7.What is the process for return or replacement of PBSS302PD,115?

All PBSS302PD,115 units undergo pre-shipment inspection (PSI). If there is an issue with PBSS302PD,115, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PBSS302PD,115 part is unused and in its original packaging.

Return procedure for PBSS302PD,115:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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