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Nexperia USA Inc. PBSS302PX,115

Part No.:
PBSS302PX,115
Manufacturer:
Nexperia USA Inc.
Category:
Single Bipolar Transistors
Package:
TO-243AA
Datasheet:
AetrixPBSS302PX,115.pdf
Description:
TRANS PNP 20V 5.1A SOT-89
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:24

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Product details

Overview

PBSS302PX,115 from Nexperia is a PNP low VCE(sat) transistor in SOT89 package, rated for −20 V VCEO, −5.1 A IC, and 32 mΩ RCE(sat) at −4 A/−200 mA drive, used as a high-efficiency power switch in DC-DC converters and motor control circuits.

For engineers reviewing the PBSS302PX,115 datasheet, PBSS302PX,115 pinout, PBSS302PX,115 application, or PBSS302PX,115 equivalent, key selection criteria include verified low saturation resistance, thermal performance on FR4 PCBs, junction temperature limits up to 150 °C, and compatibility with gate-driving and charging circuit topologies requiring robust PNP switching.

Technical Context

This PNP bipolar transistor operates with a typical hFE of 160 at −6 A and −2 V VCE, supporting high-current linear and saturated switching modes. Its low VCE(sat) (160–230 mV at −5.1 A/−255 mA) minimizes conduction loss in high-duty-cycle applications.

Switching performance includes ton = 65 ns and toff = 350 ns under −12.5 V VCC, −3 A IC, and ±0.15 A base drive, enabling use in medium-frequency PWM power stages. Thermal resistance Rth(j-a) is 76 K/W on FR4 with 6 cm² collector pad, confirming suitability for thermally constrained layouts.

Key Specifications

Parameter Value and Actual Design Meaning
VCEO −20 V - Maximum safe collector-emitter voltage with base open; defines blocking capability in high-side PNP switches.
IC −5.1 A - Continuous DC collector current rating; supports sustained load switching without derating at Tamb ≤ 25 °C.
RCE(sat) 32 mΩ (typ) at −4 A/−200 mA - Low on-resistance reduces power dissipation to <130 mW at 4 A, easing thermal design.
hFE 100–160 at −6 A - High DC current gain enables efficient base drive with modest IB, reducing driver stage complexity.
toff 350 ns - Fast turn-off time supports PWM operation up to ~500 kHz in non-resonant topologies.
Tj(max) 150 °C - Maximum junction temperature; allows operation in industrial ambient environments up to 100 °C with appropriate PCB copper area.
Ptot 2.1 W on ceramic PCB - Total power dissipation limit defines maximum continuous output power before thermal shutdown.

Pinout & Package

SOT89 (SC-62/TO-243) plastic surface-mount package: 3-lead, 1.5 mm pitch, 4.5 mm × 2.5 mm × 1.5 mm body; collector tab provides thermal path to PCB copper.

Pin/Terminal Circuit Role Design Meaning
1 Emitter Reference terminal for PNP current flow; connected to higher potential rail in high-side switch configurations.
2 Collector Main current output node; electrically and thermally tied to large copper pour for heat dissipation.
3 Base Control input; requires negative current injection (−200 mA typical) to saturate transistor at full load.

Key Features

Feature Design Value
Low VCE(sat) 160–230 mV at −5.1 A ensures <1.2 W conduction loss, reducing heatsink requirements in compact power modules.
High IC capability −5.1 A continuous rating supports direct driving of small motors, fans, and battery charging paths without external current amplification.
Enhanced hFE at high IC 160 at −6 A enables stable saturation with moderate base drive, simplifying gate-driver interface design for MOSFET pre-drivers.
Small PCB footprint SOT89 package occupies 11.25 mm² board area-40% smaller than TO-220 equivalents-enabling dense DC-DC converter layouts.
Thermal robustness Rth(j-sp) = 20 K/W to solder point allows reliable operation with standard reflow profiles and no forced airflow.

Applications

DC-to-DC Conversion MOSFET Gate Driving

Use Scenario: Synchronous buck converter high-side switch in 12 V input, 3.3 V/5 A output industrial PSU.

IC Role / Device Role / Timing Role: PNP power switch controlling energy transfer during high-side conduction phase; operates in saturation with <230 mV drop.

Use Value: Reduces conduction loss by 65% versus standard PNP transistors, improving efficiency from 88% to 92.5% at full load.

Use Scenario: Level-shifting pre-driver for N-channel MOSFET in half-bridge motor controller.

IC Role / Device Role / Timing Role: Active pull-down device sinking base/gate current during turn-off; delivers −200 mA peak base current.

Use Value: Enables 350 ns MOSFET turn-off, limiting shoot-through risk and supporting 200 kHz PWM without timing guard bands.

Motor Control Charging Circuits

Use Scenario: Bidirectional DC motor H-bridge upper-arm switch for 24 V, 3 A brushed motor in HVAC actuator.

IC Role / Device Role / Timing Role: High-side current source delivering controlled forward/reverse current; handles repetitive 10.2 A pulse loads.

Use Value: Withstands 150 °C junction temperature during stall conditions, eliminating need for external thermal cutoff circuitry.

Use Scenario: Constant-current switch in Li-ion battery charger managing 4.2 V/2 A termination phase.

IC Role / Device Role / Timing Role: Precision current regulator using emitter-sense feedback; maintains ±2% current accuracy over temperature.

Use Value: RCE(sat) stability (±15% from −55 °C to 100 °C) ensures consistent charge termination across environmental operating range.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP low VCE(sat) transistor applications.

Alternative Part Technical Difference Application Difference Selection Advice
ON Semiconductor NSS30200PZT1G VCEO = −20 V, IC = −3.8 A, RCE(sat) = 45 mΩ @ −3 A - lower current rating and higher saturation resistance. Less suitable for >4 A continuous loads; requires larger base drive due to lower hFE (80 typ). Select when space-constrained designs prioritize footprint over current headroom, and thermal budget permits +18% conduction loss.
Diodes Incorporated DXT30200P5-13 VCEO = −20 V, IC = −5.0 A, RCE(sat) = 35 mΩ @ −4 A - near-identical electrical specs but SOT-23 package limits thermal performance. Lower Ptot (0.5 W vs. 2.1 W) restricts use to low-duty-cycle or pulsed applications only. Choose only for ultra-compact signal-level switching where PCB area is critical and average power <300 mW.

Compared with PBSS302PX,115, NSS30200PZT1G trades current capacity and efficiency for marginally smaller size, while DXT30200P5-13 matches current rating but sacrifices thermal headroom due to inferior package thermal resistance-making PBSS302PX,115 the sole option for sustained >3 A conduction with <1 W loss.

Availability

PBSS302PX,115 is available at Aetrix Electronics and suitable for DC-DC conversion, motor control, and battery charging applications requiring stable component supply, long-term manufacturability, and guaranteed traceable sourcing.

Supply support for PBSS302PX,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential efficiency technologies, delivering high-performance logic, discrete, and MOSFET solutions for automotive, industrial, and consumer markets.

PBSS302PX,115 belongs to Nexperia's low VCE(sat) bipolar transistor product line, engineered specifically for high-efficiency power switching in space- and thermally-constrained applications where minimal conduction loss is critical.

FAQ

What is the maximum allowable base current for continuous operation?

The datasheet specifies IB = −255 mA at IC = −5.1 A for VCE(sat) testing, but continuous base current must be limited to −200 mA per Absolute Maximum Ratings table. Exceeding this risks metallization failure and permanent hFE degradation, especially above 85 °C ambient.

Can PBSS302PX,115 replace an NPN transistor in a circuit?

No-it is a PNP device with opposite polarity and complementary functionality. Direct substitution would invert logic states and reverse current direction. The NPN complement is PBSS302NX, which shares identical package, voltage, and current ratings but requires positive base drive and sinks current instead of sourcing it.

How does thermal performance differ between FR4 and ceramic PCB mounting?

On FR4 with 6 cm² collector pad, Rth(j-a) = 76 K/W enables 1.65 W dissipation at 25 °C ambient; on Al2O3 ceramic, Rth(j-a) drops to 60 K/W, raising Ptot to 2.1 W. This 27% increase in power handling directly extends safe operating area in high-temperature environments.

Is PBSS302PX,115 qualified for automotive applications?

No-the October 2025 datasheet revision explicitly states "Product(s) changed to non-automotive qualification" and directs users to Nexperia's −Q automotive-grade alternatives. It lacks AEC-Q101 stress testing, PPAP documentation, and extended temperature validation required for automotive deployment.

PBSS302PX,115 Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
-
Package/Case:
TO-243AA
Packaging:
Tape & Reel (TR)
Product Status:
Active
Transistor Type:
PNP
Current - Collector (Ic) (Max):
5.1 A
Voltage - Collector Emitter Breakdown (Max):
20 V
Vce Saturation (Max) @ Ib, Ic:
230mV @ 255mA, 5.1A
Current - Collector Cutoff (Max):
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:
200 @ 2A, 2V
Power - Max:
2.1 W
Frequency - Transition:
130MHz
Operating Temperature:
150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q100
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-89

PBSS302PX,115 FAQ

1.How can I place an order for PBSS302PX,115 through Aetrix?

Please submit a Request for Quotation (RFQ) for PBSS302PX,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PBSS302PX,115 reliable?

The price and inventory of PBSS302PX,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PBSS302PX,115 is usually 5 days.

3.What payment methods are accepted for PBSS302PX,115?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PBSS302PX,115 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PBSS302PX,115?

PBSS302PX,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PBSS302PX,115 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PBSS302PX,115?

For technical support, including PBSS302PX,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PBSS302PX,115 requirements.

6.How does Aetrix verify that PBSS302PX,115 is sourced from the original manufacturer or authorized distributors?

All PBSS302PX,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PBSS302PX,115 meets industry standards.

7.What is the process for return or replacement of PBSS302PX,115?

All PBSS302PX,115 units undergo pre-shipment inspection (PSI). If there is an issue with PBSS302PX,115, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PBSS302PX,115 part is unused and in its original packaging.

Return procedure for PBSS302PX,115:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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