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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

Nexperia USA Inc. PBSS302PZ,135

Name: PBSS302PZ,135
Brand: Nexperia USA Inc.
SKU: PBSS302PZ,135
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PBSS302PZ,135

Manufacturer:: Nexperia USA Inc.

Category:: Single Bipolar Transistors

Package:: TO-261-4, TO-261AA

Datasheet:: PBSS302PZ,135.pdf

Description:: TRANS PNP 20V 5.5A SOT-223

Quantity:: RFQ Add To RFQ list

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Product details

Overview

PBSS302PZ,135 from Nexperia is a PNP low V_CEsat Breakthrough In Small Signal (BISS) transistor in SOT223 (SC-73) package, designed for high-efficiency switching in power-constrained circuits. It delivers −20 V V_CEO, −5.5 A continuous collector current, and ultra-low 35–50 mΩ R_CEsat at −4 A/−200 mA drive - enabling compact DC-DC converters and MOSFET gate drivers with minimal conduction loss.

For engineers reviewing the PBSS302PZ,135 datasheet, PBSS302PZ,135 pinout, PBSS302PZ,135 application, or PBSS302PZ,135 equivalent, key selection criteria include verified low saturation resistance, thermal performance on FR4 PCBs, PNP polarity compatibility with complementary NPN PBSS302NZ, and suitability for motor control and charging circuit designs requiring <−185 mV V_CEsat at full rated current.

Technical Context

This BISS transistor uses an optimized PNP epitaxial structure to achieve high h_FE (250–370 at −0.5 A) while maintaining low V_CEsat across wide current range (−0.5 A to −5.5 A). Its dual-collector pinning (pins 2 and 4) enhances thermal dissipation and current handling without external paralleling.

The device operates with base-emitter turn-on voltage of −0.76 to −0.85 V at −2 A and exhibits 130 MHz f_T at −100 mA, supporting fast switching in PWM-driven applications. Transient thermal impedance data confirms stable junction temperature under pulsed loads up to 11 A peak.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	−20 V - Maximum safe blocking voltage between collector and emitter with base open; defines usable supply rail headroom in PNP switch configurations.
I_C	−5.5 A - Continuous DC collector current rating; enables direct driving of medium-power loads like fans or solenoids without heatsinking on standard FR4.
R_CEsat	35–50 mΩ at −4 A/−200 mA - Directly determines I²R conduction loss; yields <0.8 W dissipation at full load, reducing thermal design burden.
h_FE	150–220 at −4 A - High current gain ensures efficient base drive utilization; allows microcontroller GPIOs to directly saturate the transistor with ≤200 mA base current.
f_T	130 MHz - Transition frequency confirms suitability for switching frequencies up to ~10–20 MHz in high-speed gate driving or Class-D amplifier stages.
t_off	350 ns - Total turn-off time supports PWM operation above 1 MHz with controlled fall characteristics and minimal switching loss.
P_tot	1.7 W on FR4 with 6 cm² collector pad - Specifies maximum steady-state power dissipation achievable with simple PCB copper area, not requiring dedicated heatsinks.

Pinout & Package

SOT223 (SC-73) surface-mount plastic package with integrated heat sink tab (pin 2 and 4 both connected to collector), 4-lead configuration optimized for thermal performance on standard FR4 PCBs.

Pin/Terminal	Circuit Role	Design Meaning
1	Base	Control input terminal; requires −200 mA base current to fully saturate at −4 A collector load per datasheet test condition.
2	Collector	Main high-current output terminal; electrically tied to pin 4; serves as primary thermal path to PCB copper pour.
3	Emiter	Power return node; connects to system ground or positive rail depending on PNP high-side switch topology.
4	Collector	Secondary collector connection; internally bonded to pin 2 to double current-carrying capacity and improve thermal spreading.

Key Features

Feature	Design Value
Low V_CEsat	−140 to −200 mV at −4 A/−200 mA - Reduces conduction loss by >50% vs. conventional PNP transistors, improving efficiency in battery-powered systems.
Dual-collector thermal design	Pins 2 and 4 both connected to collector - Enables 1.7 W power dissipation on FR4 with 6 cm² copper, eliminating need for external heatsinks in most industrial controls.
High h_FE at high current	150–220 at −4 A - Allows use of low-drive-strength controllers (e.g., 3.3 V MCU GPIOs) without base driver stages, simplifying BOM and layout.
Fast switching	350 ns t_off, 130 MHz f_T - Supports high-frequency PWM in DC-DC converters and motor commutation without excessive switching loss.
Robust SOA	−11 A peak collector current (tp ≤1 ms) - Handles inrush currents in motor startup and capacitor charging without secondary breakdown.

Applications

DC-DC Converters

MOSFET Gate Driving

Use Scenario: Step-down (buck) converter output stage in portable medical devices requiring <1% output ripple and >90% efficiency at 1–3 A load.

IC Role / Device Role / Timing Role: PNP high-side switch controlling synchronous rectification timing; driven by PWM controller with 100 ns dead-time margin.

Use Value: 35 mΩ R_CEsat limits conduction loss to <0.56 W at 4 A, enabling passive cooling and extending battery runtime by 12% vs. legacy transistors.

Use Scenario: Level-shifting gate driver for N-channel MOSFET in 24 V industrial motor H-bridge with 20 kHz PWM.

IC Role / Device Role / Timing Role: Active pull-down element in totem-pole driver stage; switches 2 nF gate capacitance with <350 ns fall time.

Use Value: −200 mV V_CEsat at −4 A ensures MOSFET gate discharges to <0.2 V within 100 ns, preventing shoot-through during transitions.

Motor Control

Charging Circuits

Use Scenario: Bidirectional 12 V fan controller in telecom power shelf with overtemperature shutdown and soft-start sequencing.

IC Role / Device Role / Timing Role: Low-side current-sense switch in PWM-controlled current loop; handles 5.5 A stall current with <150 °C junction rise.

Use Value: Dual-collector thermal path sustains 1.7 W dissipation on 6 cm² FR4 copper, eliminating thermal derating below 85 °C ambient.

Use Scenario: Constant-current charger for 3S Li-ion battery packs in handheld test equipment with USB-C PD input.

IC Role / Device Role / Timing Role: Precision current-regulating pass element in linear charging stage; modulated via DAC-controlled base current.

Use Value: Tight h_FE tolerance (±15%) and −185 mV V_CEsat at −5.5 A enable ±2% charge current accuracy without external sense resistors.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP low-V_CEsat transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
ON Semiconductor NSS30200PZT1G	V_CEO = −20 V, I_C = −3 A, R_CEsat = 60–90 mΩ at −2 A - lower current rating and higher saturation resistance.	Limited to sub-3 A loads; unsuitable for 5.5 A motor control or charging applications without parallel devices.	Select when board space is constrained and load current remains ≤3 A; verify thermal margin on FR4 with 3 cm² copper.
Diodes Inc. DXT30200PZ-13	V_CEO = −20 V, I_C = −4 A, R_CEsat = 45–65 mΩ at −3 A - 1.5 A lower I_C rating and 10 mΩ higher R_CEsat.	Requires derating to 3.5 A continuous for reliability; marginal for 5.5 A peak inrush scenarios.	Choose only if PBSS302PZ,135 is unavailable and design can tolerate 15% higher conduction loss and reduced SOA margin.

Compared with NSS30200PZT1G and DXT30200PZ-13, PBSS302PZ,135 provides 23% higher continuous current, 30% lower R_CEsat, and dual-collector thermal architecture - making it uniquely suitable for space-constrained, thermally demanding 5 A-class power switching without compromise.

Availability

PBSS302PZ,135 is available at Aetrix Electronics and suitable for DC-DC conversion, motor control, and charging circuits requiring stable component supply, long-term lifecycle assurance, and consistent parametric performance across production batches.

Supply support for PBSS302PZ,135 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global leader in discrete, logic, and PowerMOS semiconductors, spun off from NXP in 2017 and focused on automotive, industrial, computing, and consumer markets.

PBSS302PZ,135 belongs to Nexperia's BISS transistor product line, engineered specifically for high-efficiency, high-current switching in compact power management systems where low V_CEsat and thermal robustness are critical.

FAQ

What is the maximum allowable junction temperature for PBSS302PZ,135?

The absolute maximum junction temperature (T_j) is 150 °C per the datasheet limiting values table. Operation above this threshold risks permanent degradation of h_FE and increased leakage. Derating curves show that total power dissipation must be reduced to 1.0 W at 100 °C ambient on standard FR4, ensuring safe operation within thermal limits.

Can PBSS302PZ,135 replace a standard PNP bipolar transistor in existing designs?

Yes, but only after verifying pin compatibility (SOT223, pins 1–4 match base-collector-emitter-collector) and recalculating base drive requirements. Its lower V_CEsat reduces base current demand by ~30% versus conventional PNPs at same I_C, so existing resistor-based bias networks may overdrive the base and require adjustment to maintain optimal saturation.

Does PBSS302PZ,135 require a heatsink in typical applications?

No heatsink is required when mounted on FR4 with ≥6 cm² copper area connected to pins 2 and 4, as P_tot reaches 1.7 W at 25 °C ambient. On standard footprint (no extended copper), thermal resistance rises to 179 K/W, limiting usable power to 0.7 W - in such cases, increasing copper area is preferred over adding a heatsink due to the SOT223 package's integrated thermal pad design.

How does the dual-collector configuration affect PCB layout?

Pins 2 and 4 are internally shorted to the collector, so both must be connected to the same high-current net - typically a large copper pour serving as thermal plane and current path. The layout must avoid splitting this net or routing sensitive signals underneath it; minimum 0.5 mm clearance from adjacent traces is recommended to prevent thermal crosstalk and ensure reliable solder joint formation.

PBSS302PZ,135 Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: TO-261-4, TO-261AA

Packaging:: Tape & Reel (TR)

Product Status:: Active

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 5.5 A

Voltage - Collector Emitter Breakdown (Max):: 20 V

Vce Saturation (Max) @ Ib, Ic:: 265mV @ 275mA, 5.5A

Current - Collector Cutoff (Max):: 100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 200 @ 2A, 2V

Power - Max:: 2 W

Frequency - Transition:: 130MHz

Operating Temperature:: 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q100

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-223

PBSS302PZ,135 FAQ

1.How can I place an order for PBSS302PZ,135 through Aetrix?

Please submit a Request for Quotation (RFQ) for PBSS302PZ,135 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PBSS302PZ,135 reliable?

The price and inventory of PBSS302PZ,135 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PBSS302PZ,135 is usually 5 days.

3.What payment methods are accepted for PBSS302PZ,135?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PBSS302PZ,135 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PBSS302PZ,135?

PBSS302PZ,135 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PBSS302PZ,135 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PBSS302PZ,135?

For technical support, including PBSS302PZ,135 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PBSS302PZ,135 requirements.

6.How does Aetrix verify that PBSS302PZ,135 is sourced from the original manufacturer or authorized distributors?

All PBSS302PZ,135 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PBSS302PZ,135 meets industry standards.

7.What is the process for return or replacement of PBSS302PZ,135?

All PBSS302PZ,135 units undergo pre-shipment inspection (PSI). If there is an issue with PBSS302PZ,135, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PBSS302PZ,135 part is unused and in its original packaging.

Return procedure for PBSS302PZ,135:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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