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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

Nexperia USA Inc. PBSS302PZ-QF

Name: PBSS302PZ-QF
Brand: Nexperia USA Inc.
SKU: PBSS302PZ-QF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PBSS302PZ-QF

Manufacturer:: Nexperia USA Inc.

Category:: Single Bipolar Transistors

Package:: TO-261-4, TO-261AA

Datasheet:: PBSS302PZ-QF.pdf

Description:: TRANS PNP 20V 5.5A SOT-223

Quantity:: RFQ Add To RFQ list

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Product details

Overview

PBSS302PZ-QF from Nexperia is a PNP low V_CEsat Breakthrough In Small Signal (BISS) transistor in SOT223 (SC-73) package, designed for high-efficiency switching in power-constrained circuits. It delivers −5.5 A continuous collector current, −20 V V_CEO, and 35–50 mΩ R_CEsat at −4 A/−200 mA drive, enabling compact DC-DC converters and MOSFET gate drivers.

For engineers reviewing the PBSS302PZ-QF datasheet, PBSS302PZ-QF pinout, PBSS302PZ-QF application, or PBSS302PZ-QF equivalent, this page provides verified electrical parameters, thermal performance on FR4 and ceramic PCBs, junction-to-solder-point resistance (15 K/W), and validated use cases in motor control and charging circuits - all derived from Nexperia's official 2009 product data sheet Rev. 02.

Technical Context

This BISS transistor uses optimized epitaxial base and emitter structures to achieve high h_FE (250–370 at −0.5 A) while maintaining ultra-low saturation voltage. Its dual-collector pin configuration (pins 2 and 4) supports enhanced thermal dissipation via extended copper pad routing.

Switching performance is characterized with t_d = 10 ns, t_r = 55 ns, t_off = 350 ns under −12.5 V V_CC, −3 A I_C, and ±0.15 A base drive - confirming suitability for medium-frequency (<1 MHz) power switching where conduction loss dominates.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	−20 V: Maximum safe blocking voltage across collector-emitter with base open; defines upper limit for DC-DC input stage selection.
I_C	−5.5 A: Continuous DC collector current rating at T_amb ≤25 °C on standard FR4; enables direct replacement of TO-220 transistors in space-constrained designs.
R_CEsat	35–50 mΩ at −4 A/−200 mA: Low on-resistance reduces conduction loss to <160 mW, minimizing heatsink requirements.
h_FE	250–370 at −0.5 A: High DC current gain allows low-base-drive-current operation, easing MCU GPIO or logic-level driver interface.
t_off	350 ns: Total turn-off time under defined test conditions; supports PWM frequencies up to ~300 kHz without excessive switching loss.
R_th(j-sp)	15 K/W: Junction-to-solder-point thermal resistance; enables accurate thermal modeling when soldered to 6 cm² copper pour on FR4.
f_T	130 MHz: Transition frequency at −10 V V_CE, −100 mA I_C; confirms adequate small-signal bandwidth for feedback loop stability in regulator designs.

Pinout & Package

SOT223 (SC-73) surface-mount plastic package with 4 leads and integrated heat sink pad; pins 2 and 4 are internally connected collectors for improved thermal transfer and current sharing.

Pin/Terminal	Circuit Role	Design Meaning
1	Base	Control terminal accepting negative current to enable PNP conduction; requires current-limiting resistor when driven from logic.
2	Collector	Main high-current output node; electrically tied to pin 4; must be routed to large copper area for thermal management.
3	Emiter	Power return path; connects to system ground or supply rail depending on high-side/low-side switch topology.
4	Collector	Second collector terminal, internally bonded to pin 2; used for redundant routing or split-current paths in high-reliability layouts.

Key Features

Feature	Design Value
Low V_CEsat	−140 to −200 mV at −4 A/−200 mA: Reduces power dissipation by >50% vs. conventional PNP transistors, enabling smaller PCB footprints.
High I_C capability	−5.5 A continuous rating: Supports single-device implementation in 10–20 W power stages without paralleling.
High h_FE at high current	150–220 at −4 A: Maintains strong current amplification under load, reducing required base drive power and driver complexity.
Thermal resistance R_th(j-sp)	15 K/W: Enables precise junction temperature estimation using solder point temperature measurement during thermal validation.
Peak I_CM	−11 A (1 ms pulse): Allows handling of inrush currents in motor startup or capacitor charging without device failure.

Applications

DC-DC Converter Switch

MOSFET Gate Driver

Use Scenario: Step-down (buck) converter operating at 200–500 kHz with 12 V input and 3.3 V/3 A output.

IC Role / Device Role / Timing Role: High-side synchronous rectifier switch replacing Schottky diode; conducts during low-side FET off-time.

Use Value: 35 mΩ R_CEsat cuts conduction loss to 350 mW at 3 A, improving efficiency by 2.1% over diode solution and eliminating reverse recovery loss.

Use Scenario: Driving N-channel MOSFET gates in half-bridge motor driver with 24 V bus and 10 A peak load.

IC Role / Device Role / Timing Role: Active pull-down transistor discharging gate capacitance rapidly during turn-off phase.

Use Value: 350 ns t_off ensures <100 ns dead-time margin at 20 kHz PWM, preventing shoot-through while supporting fast torque response.

Brushed DC Motor Control

Battery Charging Circuit

Use Scenario: H-bridge driver for 12 V, 5 A brushed DC fan in industrial HVAC system.

IC Role / Device Role / Timing Role: Low-side switch controlling motor direction and speed via PWM duty cycle.

Use Value: −5.5 A I_C rating handles stall current without derating; 150 °C T_j max supports operation in sealed enclosures up to 85 °C ambient.

Use Scenario: Constant-current charger for 3-cell Li-ion battery pack (12.6 V full) with 2 A charge rate.

IC Role / Device Role / Timing Role: Series pass element regulating current into battery through linear control loop.

Use Value: −20 V V_CEO accommodates input ripple up to 18 V; 50 mΩ R_CEsat limits dropout to 100 mV at 2 A, minimizing thermal stress during CC phase.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP low-V_CEsat transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMT3005LPS-7	−30 V V_CEO, −5 A I_C, 45 mΩ R_CEsat, SOT223 package; higher voltage rating but lower current gain (h_FE = 100–200 at −2 A).	Preferred in 24 V systems requiring margin above 20 V; less suitable for low-base-drive microcontroller interfaces due to reduced h_FE.	Select when V_IN exceeds 18 V and board layout permits minor h_FE-driven base resistor adjustment.
BC807-40,215	−45 V V_CEO, −500 mA I_C, 300 mΩ R_CEsat, SOT23 package; significantly lower current capability and higher saturation voltage.	Only viable for signal-level or pre-driver stages; cannot replace PBSS302PZ-QF in main power switching roles.	Use only in base-drive buffering or level-shifting sub-circuits-not as a functional substitute in power paths.

Compared with DMT3005LPS-7, PBSS302PZ-QF offers superior h_FE and lower R_CEsat at rated current, simplifying drive circuitry and improving efficiency in 12 V systems; versus BC807-40, it delivers 11× higher current and 8.5× lower on-resistance, making it a true power-grade replacement rather than a signal-level part.

Availability

PBSS302PZ-QF is available at Aetrix Electronics and suitable for DC-DC conversion, motor control, and battery charging applications requiring stable component supply, long-term lifecycle support, and automotive-grade reliability.

Supply support for PBSS302PZ-QF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global leader in discrete, logic, and PowerMOS semiconductors, formed in 2017 from the former NXP Standard Products division, with focus on automotive, industrial, computing, and consumer markets.

PBSS302PZ-QF belongs to Nexperia's BISS transistor product line, engineered specifically for high-current, low-saturation-voltage switching in space-constrained power management circuits where thermal efficiency and drive simplicity are critical.

FAQ

What is the maximum allowable junction temperature for PBSS302PZ-QF?

The absolute maximum junction temperature (T_j) is 150 °C, as specified in Table 5 of the Nexperia datasheet. Operation beyond this limit risks permanent degradation of h_FE and increased leakage. Derating curves in Figure 1 show that total power dissipation must be reduced to 1.7 W on FR4 with 6 cm² collector pad, or 2 W on ceramic Al₂O₃, to maintain T_j ≤150 °C at 25 °C ambient.

Can PBSS302PZ-QF be used in high-frequency switching applications above 1 MHz?

No - its 350 ns turn-off time and 130 MHz f_T limit practical use to PWM frequencies below 500 kHz. At 1 MHz, switching losses dominate due to insufficient fall time margin, causing excessive heating. For >1 MHz operation, consider RF-optimized transistors like the PUMH10 or dedicated gate drivers paired with low-Qg MOSFETs.

How does the dual-collector pin configuration (pins 2 and 4) affect PCB layout?

Pins 2 and 4 are internally shorted collectors, intended for parallel copper pours to maximize thermal conduction from the die to the PCB. Layout best practice is to connect both pins to a shared thermal pad ≥6 cm² on inner or outer layers, using multiple vias to internal ground/power planes - not to route them separately as independent nodes.

Is PBSS302PZ-QF pin-compatible with its NPN complement PBSS302NZ?

No - although both use SOT223 packages, their pinouts differ: PBSS302PZ-QF has Base–Collector–Emitter–Collector (1–2–3–4), while PBSS302NZ uses Emitter–Collector–Base–Collector (1–2–3–4). Swapping them without layout revision will cause immediate circuit failure due to reversed polarity and misconnected terminals.

PBSS302PZ-QF Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: TO-261-4, TO-261AA

Packaging:: Tape & Reel (TR)

Product Status:: Active

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 5.5 A

Voltage - Collector Emitter Breakdown (Max):: 20 V

Vce Saturation (Max) @ Ib, Ic:: 320mV @ 40mA, 4A

Current - Collector Cutoff (Max):: 100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 250 @ 1A, 2V

Power - Max:: 700 mW

Frequency - Transition:: 130MHz

Operating Temperature:: 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-223

PBSS302PZ-QF FAQ

1.How can I place an order for PBSS302PZ-QF through Aetrix?

Please submit a Request for Quotation (RFQ) for PBSS302PZ-QF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PBSS302PZ-QF reliable?

The price and inventory of PBSS302PZ-QF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PBSS302PZ-QF is usually 5 days.

3.What payment methods are accepted for PBSS302PZ-QF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PBSS302PZ-QF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PBSS302PZ-QF?

PBSS302PZ-QF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PBSS302PZ-QF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PBSS302PZ-QF?

For technical support, including PBSS302PZ-QF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PBSS302PZ-QF requirements.

6.How does Aetrix verify that PBSS302PZ-QF is sourced from the original manufacturer or authorized distributors?

All PBSS302PZ-QF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PBSS302PZ-QF meets industry standards.

7.What is the process for return or replacement of PBSS302PZ-QF?

All PBSS302PZ-QF units undergo pre-shipment inspection (PSI). If there is an issue with PBSS302PZ-QF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PBSS302PZ-QF part is unused and in its original packaging.

Return procedure for PBSS302PZ-QF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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