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Nexperia USA Inc. PBSS303ND,115
- Part No.:
- PBSS303ND,115
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Single Bipolar Transistors
- Package:
- SC-74, SOT-457
- Datasheet:
-
PBSS303ND,115.pdf
- Description:
- TRANS NPN 60V 1A 6-TSOP
- Quantity:
- Payment:
- Shipping:
Inventory:5,990
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Product details
Overview
PBSS303ND,115 from Nexperia is an NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in SOT457 (SC-74) package, rated for 60 V VCEO, 3 A continuous collector current, and 68–90 mΩ RCEsat at IC = 2 A / IB = 200 mA. It serves as a high-efficiency switching element in high-voltage power control circuits such as MOSFET gate drivers and DC-DC converters.
For engineers reviewing the PBSS303ND,115 datasheet, PBSS303ND,115 pinout, PBSS303ND,115 application, or PBSS303ND,115 equivalent, key selection criteria include its low saturation resistance, high hFE at 2–3 A (250–185), thermal resistance down to 113 K/W with 6 cm² copper pad, and validated performance in automotive and industrial motor control.
Technical Context
This BISS transistor uses an optimized epitaxial structure to achieve low VCEsat without sacrificing gain or switching speed-exhibiting 135–180 mV VCEsat at 2 A and 115 ns turn-on time. Its six-terminal SOT457 package integrates four collector leads (pins 1,2,5,6) for enhanced current handling and thermal dissipation.
The device delivers hFE = 250–380 at IC = 2 A and VCE = 2 V, supporting robust base drive efficiency, while maintaining fT = 140 MHz for moderate-frequency switching applications up to several hundred kHz.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 60 V - Maximum safe collector-emitter voltage with base open; enables use in 48 V systems and flyback snubbers. |
| IC (continuous) | 3 A - Rated DC collector current under standard FR4 PCB conditions; supports sustained motor gate drive loads. |
| RCEsat | 68–90 mΩ - Low saturation resistance at IC = 2 A / IB = 200 mA; reduces conduction loss and self-heating. |
| hFE | 250–380 @ IC = 2 A - High DC current gain at medium load; allows reduced base drive current and simpler bias networks. |
| ton | 115 ns - Fast turn-on time with 0.1 A base drive; suitable for PWM switching above 100 kHz. |
| Rth(j-a) | 113 K/W - Thermal resistance with 6 cm² copper pad; enables >750 mW continuous dissipation at Tamb = 25 °C. |
| fT | 140 MHz - Transition frequency at VCE = 10 V / IC = 100 mA; confirms usable bandwidth for signal amplification or fast switching. |
Pinout & Package
SOT457 (SC-74) surface-mount plastic package with 6 leads, featuring four parallel collector terminals (pins 1, 2, 5, 6) for low-inductance, high-current routing and improved thermal spreading across the PCB.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 5, 6 | Collector | Four electrically connected collector terminals-reduces bond wire inductance and spreads heat across multiple PCB pads. |
| 3 | Base | Single base input for driving the transistor; requires ≥200 mA peak base current for full saturation at 2 A IC. |
| 4 | Emiter | Emitter reference node; must be routed with low impedance to minimize voltage drop during high di/dt switching. |
Key Features
| Feature | Design Value |
|---|---|
| Low VCEsat | 135–180 mV at IC = 2 A / IB = 200 mA-cuts conduction loss by ~40% vs. standard bipolar transistors. |
| High hFE at high IC | 250–380 @ IC = 2 A-enables efficient base drive with minimal external driver stage complexity. |
| Multi-collector layout | Four collector pins (1,2,5,6)-lowers effective package resistance and improves thermal coupling to PCB copper. |
| Automotive-qualified reliability | AEC-Q101 stress-tested-validated for under-hood motor control and lighting modules per Nexperia's automotive product line. |
Applications
| High-Voltage DC-DC Conversion | High-Voltage MOSFET Gate Driving |
|---|---|
Use Scenario: Step-up converter in 24–48 V industrial power supplies delivering regulated 12 V/5 V outputs. IC Role / Device Role / Timing Role: Primary-side switch controlling energy transfer into transformer primary; operates at 100–250 kHz PWM. Use Value: Low RCEsat minimizes conduction loss during on-state; multi-collector layout sustains 3 A peak current without thermal derating. |
Use Scenario: Level-shifting high-side gate driver for 600 V IGBTs in HVAC inverter modules. IC Role / Device Role / Timing Role: Saturating switch translating logic-level signals to 15 V gate drive; handles 2 A pulsed gate charge. Use Value: 115 ns ton and 665 ns toff ensure precise timing control; 60 V VCEO withstands Miller plateau voltage spikes. |
| Automotive Motor Control | TFT Backlight Inverter |
Use Scenario: Window lift or seat actuator H-bridge half-bridge leg in 12 V vehicle electrical systems. IC Role / Device Role / Timing Role: Low-side switching element commutating brushed DC motor current; duty-cycled at ≤20 kHz. Use Value: 150 °C Tj rating and AEC-Q101 qualification ensure operation in under-dash environments; hFE stability maintains drive margin over temperature. |
Use Scenario: Resonant inverter stage powering CCFL or LED backlight in automotive instrument clusters. IC Role / Device Role / Timing Role: High-voltage switching transistor generating 600–1000 V AC for lamp ignition and sustain. Use Value: 60 V VCEO and 6 A ICM support transient overvoltage during lamp strike; low Cc = 33 pF limits capacitive feedthrough noise. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar NPN low-VCEsat transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMT3005LPS-7 | 50 V VCEO, 3.5 A IC, 45 mΩ RCEsat, SOT-23-3 package (3-pin) | Limited to ≤50 V systems; lacks multi-collector thermal advantage; unsuitable for >60 V flyback or gate drive with voltage overshoot. | Prefer for space-constrained 24 V DC-DC where ultra-low RCEsat outweighs voltage headroom needs. |
| PBSS304ND,115 | 60 V VCEO, 4 A IC, 45–65 mΩ RCEsat, same SOT457 package | Higher current capability and lower RCEsat; identical pinout and footprint-drop-in upgrade where board layout permits higher power density. | Select when system requires >3 A continuous collector current or <65 mΩ conduction resistance at 3 A. |
Compared with DMTC3005LPS-7, PBSS303ND,115 provides 10 V higher blocking voltage and superior thermal management via four collector leads; versus PBSS304ND,115, it trades 1 A current capacity and ~20 mΩ lower RCEsat for cost and thermal margin optimization in 3 A-class designs.
Availability
PBSS303ND,115 is available at Aetrix Electronics and suitable for high-voltage DC-DC conversion, automotive motor control, and TFT backlight inverter applications requiring stable component supply and automotive-grade reliability.
Supply support for PBSS303ND,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global leader in discrete, logic, and PowerMOS semiconductors, spun off from NXP in 2017 and focused on automotive, industrial, computing, and consumer markets.
PBSS303ND,115 belongs to Nexperia's BISS transistor family-engineered specifically for high-efficiency, high-current switching in space-constrained power stages where low VCEsat and thermal robustness are critical.
FAQ
What is the maximum continuous collector current for PBSS303ND,115 under standard PCB conditions?
The maximum continuous collector current is 3 A when mounted on an FR4 PCB with single-sided copper and standard footprint (Table 5, condition [1]). Derating applies above 25 °C ambient: at 100 °C, IC drops to ~1.5 A based on Ptot = 360 mW and Rth(j-a) = 350 K/W.
Can PBSS303ND,115 replace a conventional BJT in existing 48 V motor control designs?
Yes-its 60 V VCEO, 3 A IC, and low 135–180 mV VCEsat at 2 A make it a direct upgrade over legacy BJTs like BC337 or MMBT3904 in 48 V H-bridge or gate driver roles. The SOT457 footprint is non-pin-compatible but offers superior thermal and current handling.
How does the four-collector pin configuration improve thermal performance?
Connecting pins 1, 2, 5, and 6 to a shared large copper pour reduces effective thermal resistance from junction to PCB by distributing heat across four solder joints and increasing copper area contact. This lowers Rth(j-a) from 350 K/W (standard FR4) to 113 K/W (6 cm² pad), enabling 2× higher power dissipation.
Is PBSS303ND,115 qualified for automotive applications?
Yes-PBSS303ND,115 is part of Nexperia's automotive-qualified portfolio and meets AEC-Q101 requirements for stress testing, including temperature cycling, humidity bias, and high-temperature operating life. It is specified for use in engine control, body electronics, and infotainment power stages.
PBSS303ND,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- SC-74, SOT-457
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Transistor Type:
- NPN
- Current - Collector (Ic) (Max):
- 1 A
- Voltage - Collector Emitter Breakdown (Max):
- 60 V
- Vce Saturation (Max) @ Ib, Ic:
- 515mV @ 600mA, 6A
- Current - Collector Cutoff (Max):
- 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 345 @ 500mA, 2V
- Power - Max:
- 1.1 W
- Frequency - Transition:
- 140MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q100
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-TSOP
PBSS303ND,115 FAQ
1.How can I place an order for PBSS303ND,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for PBSS303ND,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PBSS303ND,115 reliable?
The price and inventory of PBSS303ND,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PBSS303ND,115 is usually 5 days.
3.What payment methods are accepted for PBSS303ND,115?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PBSS303ND,115 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PBSS303ND,115?
PBSS303ND,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PBSS303ND,115 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PBSS303ND,115?
For technical support, including PBSS303ND,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PBSS303ND,115 requirements.
6.How does Aetrix verify that PBSS303ND,115 is sourced from the original manufacturer or authorized distributors?
All PBSS303ND,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PBSS303ND,115 meets industry standards.
7.What is the process for return or replacement of PBSS303ND,115?
All PBSS303ND,115 units undergo pre-shipment inspection (PSI). If there is an issue with PBSS303ND,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PBSS303ND,115 part is unused and in its original packaging.
Return procedure for PBSS303ND,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
PBSS303ND,115 Tags
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